CN1965111B - 碲化汞镉的制造 - Google Patents

碲化汞镉的制造 Download PDF

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Publication number
CN1965111B
CN1965111B CN2005800184292A CN200580018429A CN1965111B CN 1965111 B CN1965111 B CN 1965111B CN 2005800184292 A CN2005800184292 A CN 2005800184292A CN 200580018429 A CN200580018429 A CN 200580018429A CN 1965111 B CN1965111 B CN 1965111B
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China
Prior art keywords
layer
growth
cadmium
telluride
substrate
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Expired - Fee Related
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CN2005800184292A
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English (en)
Chinese (zh)
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CN1965111A (zh
Inventor
J·E·海尔斯
J·吉斯
J·W·凯恩斯
A·格拉哈姆
L·布克尔
D·J·哈尔
N·T·戈顿
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Forward Looking Infrared Systems Trading Belgium Ltd
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Qinetiq Ltd
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Publication of CN1965111A publication Critical patent/CN1965111A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2212—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group II-VI materials, e.g. HgCdTe infrared photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/125—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10F71/1253—The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe comprising at least three elements, e.g. HgCdTe

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Light Receiving Elements (AREA)
  • Led Devices (AREA)
CN2005800184292A 2004-04-06 2005-04-05 碲化汞镉的制造 Expired - Fee Related CN1965111B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0407804.4A GB0407804D0 (en) 2004-04-06 2004-04-06 Manufacture of cadmium mercury telluride
GB0407804.4 2004-04-06
PCT/GB2005/001322 WO2005098097A1 (en) 2004-04-06 2005-04-05 Manufacture of cadmium mercury telluride

Publications (2)

Publication Number Publication Date
CN1965111A CN1965111A (zh) 2007-05-16
CN1965111B true CN1965111B (zh) 2011-10-19

Family

ID=32320443

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2005800184292A Expired - Fee Related CN1965111B (zh) 2004-04-06 2005-04-05 碲化汞镉的制造

Country Status (10)

Country Link
US (1) US8021914B2 (https=)
EP (1) EP1740742A1 (https=)
JP (1) JP2007532007A (https=)
KR (1) KR101110592B1 (https=)
CN (1) CN1965111B (https=)
CA (1) CA2561648A1 (https=)
GB (1) GB0407804D0 (https=)
IL (1) IL178450A (https=)
TW (1) TW200539320A (https=)
WO (1) WO2005098097A1 (https=)

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CA2649322C (en) * 2008-09-30 2011-02-01 5N Plus Inc. Cadmium telluride production process
US8912428B2 (en) * 2008-10-22 2014-12-16 Epir Technologies, Inc. High efficiency multijunction II-VI photovoltaic solar cells
GB0918720D0 (en) 2009-10-23 2009-12-09 Qinetiq Ltd Identification device
GB0921053D0 (en) 2009-12-01 2010-01-13 Selex Sensors & Airborne Sys Infra red detectors and methods of manufacture
US9837563B2 (en) * 2009-12-17 2017-12-05 Epir Technologies, Inc. MBE growth technique for group II-VI inverted multijunction solar cells
US8541256B2 (en) * 2011-04-17 2013-09-24 Chang-Feng Wan Method of cadmium molecular beam based anneals for manufacture of HgCdTe photodiode arrays
US20130032810A1 (en) * 2011-08-03 2013-02-07 Bridgelux, Inc. Led on silicon substrate using zinc-sulfide as buffer layer
FR2983351B1 (fr) * 2011-11-28 2014-01-24 Commissariat Energie Atomique Diode p/n a heterostructure controlee autopositionnee sur hgcdte pour imageurs infrarouges
FR2997965B1 (fr) * 2012-11-12 2019-11-22 Electricite De France Enceinte pour le traitement thermique d'un materiau reactif, notamment pour la realisation de depot de couches sur un substrat, et procede de traitement thermique dans une telle enceinte
CN103074677A (zh) * 2013-01-17 2013-05-01 山东大学 一种碲化锌同质外延层的制备方法
FR3021807B1 (fr) 2014-05-27 2017-09-29 Commissariat A L Energie Atomique Et Aux Energies Alternatives Matrice de photodiodes mesa a ftm amelioree
DE112017004005B4 (de) 2016-08-10 2024-07-18 Sumco Corporation Verfahren zur herstellung von siliziumepitaxialwafern
US11121302B2 (en) 2018-10-11 2021-09-14 SeeQC, Inc. System and method for superconducting multi-chip module
US11519095B2 (en) * 2019-04-22 2022-12-06 Peng DU MBE system with direct evaporation pump to cold panel
WO2021022558A1 (en) * 2019-08-08 2021-02-11 China Triumph International Engineering Co., Ltd. A method to deposit thin film high quality absorber layer
CN120519960B (zh) * 2025-07-25 2025-09-16 浙江拓感科技有限公司 基于图形化蓝宝石衬底的碲镉汞材料液相外延方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1380246A (zh) * 2002-05-15 2002-11-20 西安交通大学 碲化镉粉末的制备方法

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GB8324531D0 (en) * 1983-09-13 1983-10-12 Secr Defence Cadmium mercury telluride
GB8428032D0 (en) 1984-11-06 1984-12-12 Secr Defence Growth of crystalline layers
US4804638A (en) * 1986-12-18 1989-02-14 Raytheon Company Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity
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Also Published As

Publication number Publication date
KR20070011449A (ko) 2007-01-24
US20070197022A1 (en) 2007-08-23
CA2561648A1 (en) 2005-10-20
JP2007532007A (ja) 2007-11-08
IL178450A (en) 2012-05-31
WO2005098097A1 (en) 2005-10-20
TW200539320A (en) 2005-12-01
EP1740742A1 (en) 2007-01-10
US8021914B2 (en) 2011-09-20
HK1102198A1 (en) 2007-11-09
KR101110592B1 (ko) 2012-02-17
CN1965111A (zh) 2007-05-16
GB0407804D0 (en) 2004-05-12
IL178450A0 (en) 2007-02-11

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