JP2007515081A5 - - Google Patents

Download PDF

Info

Publication number
JP2007515081A5
JP2007515081A5 JP2006545785A JP2006545785A JP2007515081A5 JP 2007515081 A5 JP2007515081 A5 JP 2007515081A5 JP 2006545785 A JP2006545785 A JP 2006545785A JP 2006545785 A JP2006545785 A JP 2006545785A JP 2007515081 A5 JP2007515081 A5 JP 2007515081A5
Authority
JP
Japan
Prior art keywords
ring
assembly
substrate
lower ring
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006545785A
Other languages
English (en)
Japanese (ja)
Other versions
JP4913603B2 (ja
JP2007515081A (ja
Filing date
Publication date
Priority claimed from US10/736,666 external-priority patent/US7244336B2/en
Application filed filed Critical
Publication of JP2007515081A publication Critical patent/JP2007515081A/ja
Publication of JP2007515081A5 publication Critical patent/JP2007515081A5/ja
Application granted granted Critical
Publication of JP4913603B2 publication Critical patent/JP4913603B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP2006545785A 2003-12-17 2004-12-10 プラズマ反応器のエッチング速度ドリフトを低減するための温度制御されたホットエッジリングアセンブリ Expired - Lifetime JP4913603B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/736,666 US7244336B2 (en) 2003-12-17 2003-12-17 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US10/736,666 2003-12-17
PCT/US2004/041768 WO2005059962A2 (en) 2003-12-17 2004-12-10 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift

Publications (3)

Publication Number Publication Date
JP2007515081A JP2007515081A (ja) 2007-06-07
JP2007515081A5 true JP2007515081A5 (enExample) 2008-02-07
JP4913603B2 JP4913603B2 (ja) 2012-04-11

Family

ID=34677226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006545785A Expired - Lifetime JP4913603B2 (ja) 2003-12-17 2004-12-10 プラズマ反応器のエッチング速度ドリフトを低減するための温度制御されたホットエッジリングアセンブリ

Country Status (7)

Country Link
US (1) US7244336B2 (enExample)
EP (1) EP1706898B1 (enExample)
JP (1) JP4913603B2 (enExample)
KR (1) KR101131022B1 (enExample)
CN (1) CN100474521C (enExample)
TW (1) TWI368274B (enExample)
WO (1) WO2005059962A2 (enExample)

Families Citing this family (120)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI246873B (en) 2001-07-10 2006-01-01 Tokyo Electron Ltd Plasma processing device
GB0121980D0 (en) 2001-09-11 2001-10-31 Cathnet Science Holding As Expandable stent
US7147656B2 (en) 2001-12-03 2006-12-12 Xtent, Inc. Apparatus and methods for delivery of braided prostheses
US8080048B2 (en) 2001-12-03 2011-12-20 Xtent, Inc. Stent delivery for bifurcated vessels
US7270668B2 (en) * 2001-12-03 2007-09-18 Xtent, Inc. Apparatus and methods for delivering coiled prostheses
US7137993B2 (en) 2001-12-03 2006-11-21 Xtent, Inc. Apparatus and methods for delivery of multiple distributed stents
US7182779B2 (en) 2001-12-03 2007-02-27 Xtent, Inc. Apparatus and methods for positioning prostheses for deployment from a catheter
US7351255B2 (en) 2001-12-03 2008-04-01 Xtent, Inc. Stent delivery apparatus and method
US7892273B2 (en) 2001-12-03 2011-02-22 Xtent, Inc. Custom length stent apparatus
US7309350B2 (en) * 2001-12-03 2007-12-18 Xtent, Inc. Apparatus and methods for deployment of vascular prostheses
US20030135266A1 (en) 2001-12-03 2003-07-17 Xtent, Inc. Apparatus and methods for delivery of multiple distributed stents
US7294146B2 (en) 2001-12-03 2007-11-13 Xtent, Inc. Apparatus and methods for delivery of variable length stents
US20040186551A1 (en) 2003-01-17 2004-09-23 Xtent, Inc. Multiple independent nested stent structures and methods for their preparation and deployment
KR100657054B1 (ko) * 2003-01-07 2006-12-13 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 포커스 링
US7241308B2 (en) 2003-06-09 2007-07-10 Xtent, Inc. Stent deployment systems and methods
US6840569B1 (en) * 2003-07-22 2005-01-11 Arthur Donald Leigh Caravan
US7658816B2 (en) * 2003-09-05 2010-02-09 Tokyo Electron Limited Focus ring and plasma processing apparatus
US7553324B2 (en) 2003-10-14 2009-06-30 Xtent, Inc. Fixed stent delivery devices and methods
US7192440B2 (en) * 2003-10-15 2007-03-20 Xtent, Inc. Implantable stent delivery devices and methods
US7326236B2 (en) 2003-12-23 2008-02-05 Xtent, Inc. Devices and methods for controlling and indicating the length of an interventional element
US7323006B2 (en) 2004-03-30 2008-01-29 Xtent, Inc. Rapid exchange interventional devices and methods
JP2005303099A (ja) * 2004-04-14 2005-10-27 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
US7713431B2 (en) * 2004-06-10 2010-05-11 Tokyo Electron Limited Plasma processing method
US8317859B2 (en) 2004-06-28 2012-11-27 J.W. Medical Systems Ltd. Devices and methods for controlling expandable prostheses during deployment
US20050288766A1 (en) 2004-06-28 2005-12-29 Xtent, Inc. Devices and methods for controlling expandable prostheses during deployment
US20060000802A1 (en) * 2004-06-30 2006-01-05 Ajay Kumar Method and apparatus for photomask plasma etching
US8349128B2 (en) 2004-06-30 2013-01-08 Applied Materials, Inc. Method and apparatus for stable plasma processing
US7402168B2 (en) 2005-04-11 2008-07-22 Xtent, Inc. Custom-length stent delivery system with independently operable expansion elements
JP4285456B2 (ja) * 2005-07-20 2009-06-24 セイコーエプソン株式会社 マスク、マスクの製造方法、成膜方法及び電気光学装置の製造方法
TWI354320B (en) * 2006-02-21 2011-12-11 Nuflare Technology Inc Vopor phase deposition apparatus and support table
WO2007109621A2 (en) 2006-03-20 2007-09-27 Xtent, Inc. Apparatus and methods for deployment of linked prosthetic segments
US20070283884A1 (en) * 2006-05-30 2007-12-13 Applied Materials, Inc. Ring assembly for substrate processing chamber
JP2008078208A (ja) * 2006-09-19 2008-04-03 Tokyo Electron Ltd フォーカスリング及びプラズマ処理装置
US20080194113A1 (en) * 2006-09-20 2008-08-14 Samsung Electronics Co., Ltd. Methods and apparatus for semiconductor etching including an electro static chuck
US7482550B2 (en) * 2006-10-16 2009-01-27 Lam Research Corporation Quartz guard ring
US7909961B2 (en) * 2006-10-30 2011-03-22 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US7943005B2 (en) 2006-10-30 2011-05-17 Applied Materials, Inc. Method and apparatus for photomask plasma etching
US20080199510A1 (en) 2007-02-20 2008-08-21 Xtent, Inc. Thermo-mechanically controlled implants and methods of use
US8486132B2 (en) 2007-03-22 2013-07-16 J.W. Medical Systems Ltd. Devices and methods for controlling expandable prostheses during deployment
JP5035884B2 (ja) * 2007-03-27 2012-09-26 東京エレクトロン株式会社 熱伝導シート及びこれを用いた被処理基板の載置装置
US9536711B2 (en) * 2007-03-30 2017-01-03 Lam Research Corporation Method and apparatus for DC voltage control on RF-powered electrode
US20080289766A1 (en) * 2007-05-22 2008-11-27 Samsung Austin Semiconductor Lp Hot edge ring apparatus and method for increased etch rate uniformity and reduced polymer buildup
US7837827B2 (en) * 2007-06-28 2010-11-23 Lam Research Corporation Edge ring arrangements for substrate processing
KR101625516B1 (ko) * 2008-02-08 2016-05-30 램 리써치 코포레이션 플라즈마 프로세싱 장치 및 플라즈마 프로세싱 장치에서 반도체 기판을 처리하는 방법
US9101503B2 (en) 2008-03-06 2015-08-11 J.W. Medical Systems Ltd. Apparatus having variable strut length and methods of use
US7884925B2 (en) * 2008-05-23 2011-02-08 Lam Research Corporation Electrical and optical system and methods for monitoring erosion of electrostatic chuck edge bead materials
US8449679B2 (en) * 2008-08-15 2013-05-28 Lam Research Corporation Temperature controlled hot edge ring assembly
EP4147681A1 (en) 2008-09-25 2023-03-15 Advanced Bifurcation Systems Inc. Partially crimped stent
US12324756B2 (en) 2008-09-25 2025-06-10 Advanced Bifurcation Systems Inc. System and methods for treating a bifurcation
US11298252B2 (en) 2008-09-25 2022-04-12 Advanced Bifurcation Systems Inc. Stent alignment during treatment of a bifurcation
US8821562B2 (en) 2008-09-25 2014-09-02 Advanced Bifurcation Systems, Inc. Partially crimped stent
US8769796B2 (en) 2008-09-25 2014-07-08 Advanced Bifurcation Systems, Inc. Selective stent crimping
US12076258B2 (en) 2008-09-25 2024-09-03 Advanced Bifurcation Systems Inc. Selective stent crimping
JP5635001B2 (ja) * 2008-09-26 2014-12-03 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 結合リングをクロック回転させることによって調整可能な静電チャックとホットエッジリングとの間の熱的接触
US20100116788A1 (en) * 2008-11-12 2010-05-13 Lam Research Corporation Substrate temperature control by using liquid controlled multizone substrate support
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
KR101359070B1 (ko) * 2009-03-03 2014-02-05 도쿄엘렉트론가부시키가이샤 탑재대 구조, 성막 장치 및 원료 회수 방법
KR101559913B1 (ko) * 2009-06-25 2015-10-27 삼성전자주식회사 플라즈마 건식 식각 장치
SG170717A1 (en) * 2009-11-02 2011-05-30 Lam Res Corp Hot edge ring with sloped upper surface
DE202010015933U1 (de) * 2009-12-01 2011-03-31 Lam Research Corp.(N.D.Ges.D.Staates Delaware), Fremont Eine Randringanordnung für Plasmaätzkammern
JP2011176228A (ja) * 2010-02-25 2011-09-08 Oki Semiconductor Co Ltd プラズマ処理装置及びフォーカスリング
EP2549951B1 (en) 2010-03-24 2017-05-10 Advanced Bifurcation Systems, Inc. Stent alignment during treatment of a bifurcation
WO2011119884A1 (en) 2010-03-24 2011-09-29 Advanced Bifurcation Systems, Inc System and methods for treating a bifurcation
CA2794064A1 (en) 2010-03-24 2011-09-29 Advanced Bifurcation Systems, Inc. Methods and systems for treating a bifurcation with provisional side branch stenting
EP3777780B1 (en) 2011-02-08 2024-04-24 Advanced Bifurcation Systems Inc. System for treating a bifurcation with a fully crimped stent
CA2826760A1 (en) 2011-02-08 2012-08-16 Advanced Bifurcation Systems, Inc. Multi-stent and multi-balloon apparatus for treating bifurcations and methods of use
CN102251217A (zh) * 2011-07-07 2011-11-23 杨继远 增大芯片键合面积的方法
US9947559B2 (en) * 2011-10-28 2018-04-17 Applied Materials, Inc. Thermal management of edge ring in semiconductor processing
CN103094037B (zh) * 2011-11-08 2016-04-20 北京北方微电子基地设备工艺研究中心有限责任公司 一种夹持装置及应用该夹持装置的等离子体加工设备
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
US9449797B2 (en) 2013-05-07 2016-09-20 Lam Research Corporation Component of a plasma processing apparatus having a protective in situ formed layer on a plasma exposed surface
TWI491758B (zh) 2013-05-14 2015-07-11 Global Material Science Co Ltd 用於光電半導體製程的沉積設備及其遮覆框
US20150001180A1 (en) * 2013-06-28 2015-01-01 Applied Materials, Inc. Process kit for edge critical dimension uniformity control
US10804081B2 (en) * 2013-12-20 2020-10-13 Lam Research Corporation Edge ring dimensioned to extend lifetime of elastomer seal in a plasma processing chamber
CN104862660B (zh) * 2014-02-24 2017-10-13 北京北方华创微电子装备有限公司 承载装置及等离子体加工设备
CN107112275B (zh) * 2014-12-19 2020-10-30 应用材料公司 用于基板处理腔室的边缘环
JP6452449B2 (ja) * 2015-01-06 2019-01-16 東京エレクトロン株式会社 載置台及び基板処理装置
US9633875B2 (en) * 2015-03-13 2017-04-25 Varian Semiconductor Equipment Associates, Inc. Apparatus for improving temperature uniformity of a workpiece
US20170002465A1 (en) * 2015-06-30 2017-01-05 Lam Research Corporation Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity
KR101729124B1 (ko) 2015-10-16 2017-04-24 세메스 주식회사 지지 유닛, 기판 처리 장치 및 방법
WO2017099919A1 (en) * 2015-12-07 2017-06-15 Applied Materials, Inc. Amalgamated cover ring
WO2017131927A1 (en) * 2016-01-26 2017-08-03 Applied Materials, Inc. Wafer edge ring lifting solution
JP6888007B2 (ja) 2016-01-26 2021-06-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェハエッジリングの持ち上げに関する解決
US20180122670A1 (en) * 2016-11-01 2018-05-03 Varian Semiconductor Equipment Associates, Inc. Removable substrate plane structure ring
US9947517B1 (en) 2016-12-16 2018-04-17 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
KR102581226B1 (ko) 2016-12-23 2023-09-20 삼성전자주식회사 플라즈마 처리 장치
US10553404B2 (en) 2017-02-01 2020-02-04 Applied Materials, Inc. Adjustable extended electrode for edge uniformity control
US11075105B2 (en) 2017-09-21 2021-07-27 Applied Materials, Inc. In-situ apparatus for semiconductor process module
KR20250002784A (ko) * 2017-12-15 2025-01-07 램 리써치 코포레이션 플라즈마 챔버에서 사용하기 위한 링 구조체들 및 시스템들
TWI780093B (zh) * 2017-12-15 2022-10-11 美商蘭姆研究公司 用於電漿腔室的環結構及系統
US11043400B2 (en) 2017-12-21 2021-06-22 Applied Materials, Inc. Movable and removable process kit
US12293902B2 (en) * 2018-01-19 2025-05-06 Applied Materials, Inc. Process kit for a substrate support
US11201037B2 (en) 2018-05-28 2021-12-14 Applied Materials, Inc. Process kit with adjustable tuning ring for edge uniformity control
US11935773B2 (en) 2018-06-14 2024-03-19 Applied Materials, Inc. Calibration jig and calibration method
US11211282B2 (en) * 2018-06-15 2021-12-28 Applied Materials, Inc. Apparatus to reduce contamination in a plasma etching chamber
KR20230106754A (ko) 2018-08-13 2023-07-13 램 리써치 코포레이션 에지 링 포지셔닝 및 센터링 피처들을 포함하는 플라즈마 시스 튜닝을 위한 교체가능한 에지 링 어셈블리 및/또는 접을 수 있는 에지 링 어셈블리
JP7129307B2 (ja) * 2018-10-10 2022-09-01 東京エレクトロン株式会社 基板支持アセンブリ、プラズマ処理装置、及びプラズマ処理方法
US11289310B2 (en) 2018-11-21 2022-03-29 Applied Materials, Inc. Circuits for edge ring control in shaped DC pulsed plasma process device
KR102647177B1 (ko) 2019-02-11 2024-03-15 삼성전자주식회사 플라즈마 처리 장치
KR102702089B1 (ko) * 2019-03-22 2024-09-03 삼성전자주식회사 에지 링을 갖는 기판 처리 장치
JP7204564B2 (ja) * 2019-03-29 2023-01-16 東京エレクトロン株式会社 プラズマ処理装置
US11101115B2 (en) 2019-04-19 2021-08-24 Applied Materials, Inc. Ring removal from processing chamber
US12009236B2 (en) 2019-04-22 2024-06-11 Applied Materials, Inc. Sensors and system for in-situ edge ring erosion monitor
US11894255B2 (en) 2019-07-30 2024-02-06 Applied Materials, Inc. Sheath and temperature control of process kit
JP2021040011A (ja) * 2019-09-02 2021-03-11 キオクシア株式会社 プラズマ処理装置
JP7471810B2 (ja) * 2019-12-13 2024-04-22 東京エレクトロン株式会社 リングアセンブリ、基板支持体及び基板処理装置
CN115053323A (zh) * 2020-02-04 2022-09-13 朗姆研究公司 用于衬底处理的静电边缘环安置系统
WO2021194470A1 (en) 2020-03-23 2021-09-30 Lam Research Corporation Mid-ring erosion compensation in substrate processing systems
KR20220102201A (ko) 2021-01-12 2022-07-20 삼성전자주식회사 척 어셈블리, 그를 포함하는 반도체 소자의 제조 장치, 및 반도체 소자의 제조방법
US12112971B2 (en) * 2021-03-12 2024-10-08 Applied Materials, Inc. Multi-zone semiconductor substrate supports
JP2022150471A (ja) * 2021-03-26 2022-10-07 三菱電機株式会社 半導体製造装置および半導体装置の製造方法
KR102608903B1 (ko) * 2021-04-12 2023-12-04 삼성전자주식회사 플라즈마 식각 장치 및 방법
CN115440558A (zh) 2021-06-03 2022-12-06 长鑫存储技术有限公司 半导体蚀刻设备
CN114975056B (zh) * 2021-09-08 2025-05-09 北京屹唐半导体科技股份有限公司 用于清洁等离子体加工设备的聚焦环的导电构件
JP7569772B2 (ja) * 2021-10-07 2024-10-18 日本碍子株式会社 半導体製造装置用部材
KR102896325B1 (ko) * 2021-11-09 2025-12-08 삼성전자주식회사 척 어셈블리, 그를 포함하는 반도체 소자의 제조 장치, 및 반도체 소자의 제조방법
KR102722858B1 (ko) * 2022-07-29 2024-10-29 하나머티리얼즈(주) 포커스 링 및 그의 제조 방법
US12371790B2 (en) * 2022-08-17 2025-07-29 Sky Tech Inc. Wafer carrier with adjustable alignment devices and deposition equipment using the same
US20240102153A1 (en) * 2022-09-27 2024-03-28 Applied Materials, Inc. Protective gas flow during wafer dechucking in pvd chamber
US12387912B2 (en) 2023-07-06 2025-08-12 Applied Materials, Inc. Shield ring mounting using compliant hardware

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03150365A (ja) * 1989-07-26 1991-06-26 Tokyo Electron Ltd 熱処理装置
JPH04279044A (ja) * 1991-01-09 1992-10-05 Sumitomo Metal Ind Ltd 試料保持装置
JP3209472B2 (ja) * 1993-11-05 2001-09-17 東京エレクトロン株式会社 ネジキャップおよび処理装置
US6048403A (en) * 1998-04-01 2000-04-11 Applied Materials, Inc. Multi-ledge substrate support for a thermal processing chamber
JP2917992B1 (ja) * 1998-04-10 1999-07-12 日本電気株式会社 研磨装置
US6251215B1 (en) * 1998-06-03 2001-06-26 Applied Materials, Inc. Carrier head with a multilayer retaining ring for chemical mechanical polishing
US6073577A (en) * 1998-06-30 2000-06-13 Lam Research Corporation Electrode for plasma processes and method for manufacture and use thereof
US6379491B1 (en) * 1998-10-30 2002-04-30 Promos Technologies, Inc. Plasma chamber with erosion resistive securement screws
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6344105B1 (en) 1999-06-30 2002-02-05 Lam Research Corporation Techniques for improving etch rate uniformity
JP2001093877A (ja) * 1999-09-22 2001-04-06 Texas Instr Japan Ltd 半導体装置の製造方法
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
US6377437B1 (en) 1999-12-22 2002-04-23 Lam Research Corporation High temperature electrostatic chuck
US6238513B1 (en) * 1999-12-28 2001-05-29 International Business Machines Corporation Wafer lift assembly
US6363882B1 (en) 1999-12-30 2002-04-02 Lam Research Corporation Lower electrode design for higher uniformity
US6383931B1 (en) 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
KR100635975B1 (ko) * 2000-02-14 2006-10-20 동경 엘렉트론 주식회사 플라즈마 처리 장치 및 방법과, 플라즈마 처리 장치용 링 부재
JP4592916B2 (ja) * 2000-04-25 2010-12-08 東京エレクトロン株式会社 被処理体の載置装置
WO2001082355A2 (en) * 2000-04-25 2001-11-01 Tokyo Electron Limited Method and apparatus for plasma cleaning of workpieces
US6709981B2 (en) * 2000-08-16 2004-03-23 Memc Electronic Materials, Inc. Method and apparatus for processing a semiconductor wafer using novel final polishing method
TW506234B (en) * 2000-09-18 2002-10-11 Tokyo Electron Ltd Tunable focus ring for plasma processing
US6475336B1 (en) 2000-10-06 2002-11-05 Lam Research Corporation Electrostatically clamped edge ring for plasma processing
US6391787B1 (en) 2000-10-13 2002-05-21 Lam Research Corporation Stepped upper electrode for plasma processing uniformity
JP4877884B2 (ja) * 2001-01-25 2012-02-15 東京エレクトロン株式会社 プラズマ処理装置
US6554954B2 (en) * 2001-04-03 2003-04-29 Applied Materials Inc. Conductive collar surrounding semiconductor workpiece in plasma chamber
US6896765B2 (en) * 2002-09-18 2005-05-24 Lam Research Corporation Method and apparatus for the compensation of edge ring wear in a plasma processing chamber

Similar Documents

Publication Publication Date Title
JP2007515081A5 (enExample)
TW544721B (en) Gas distribution apparatus for semiconductor processing
KR20100127200A (ko) 배치대 구조 및 처리 장치
KR101084830B1 (ko) 탑재대 구조체
US20100163183A1 (en) Mounting table structure and heat treatment apparatus
KR20100067654A (ko) 재치대 구조물 및 처리 장치
TW200525635A (en) Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
JP2008311298A (ja) 載置台およびそれを用いたプラズマ処理装置
US20110061432A1 (en) Surface treatment method, shower head, processing container, and processing apparatus using them
EP1804284B1 (en) Substrate heat treatment apparatus and substrate transfer tray used in substrate heat treatment
JP4997141B2 (ja) 真空処理装置、基板の温度制御方法
CN101191203A (zh) 等离子体反应器基板安装表面毛化
CN107305853A (zh) 反应腔室
JPWO2009031520A1 (ja) プラズマ処理装置およびプラズマ処理方法ならびに半導体素子
JP2007294812A (ja) 冷却装置およびプラズマ処理装置
JP5352156B2 (ja) 熱処理装置
JP2008205415A (ja) 静電チャック
JP2015076457A (ja) 基板処理装置
JP3736264B2 (ja) プラズマ処理装置およびプラズマ処理方法
JP4890313B2 (ja) プラズマｃｖｄ装置
JP2007294990A (ja) 基板処理装置
KR20120133326A (ko) 기판 지지핀 및 이를 포함하는 기판 안치대
JP3994792B2 (ja) プラズマ処理装置及び方法
KR100408259B1 (ko) 공정챔버_
JP5364314B2 (ja) 熱処理装置