JP2007515081A5 - - Google Patents

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Publication number
JP2007515081A5
JP2007515081A5 JP2006545785A JP2006545785A JP2007515081A5 JP 2007515081 A5 JP2007515081 A5 JP 2007515081A5 JP 2006545785 A JP2006545785 A JP 2006545785A JP 2006545785 A JP2006545785 A JP 2006545785A JP 2007515081 A5 JP2007515081 A5 JP 2007515081A5
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JP
Japan
Prior art keywords
ring
assembly
substrate
lower ring
plasma
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JP2006545785A
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English (en)
Japanese (ja)
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JP2007515081A (ja
JP4913603B2 (ja
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Priority claimed from US10/736,666 external-priority patent/US7244336B2/en
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Publication of JP2007515081A5 publication Critical patent/JP2007515081A5/ja
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Publication of JP4913603B2 publication Critical patent/JP4913603B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2006545785A 2003-12-17 2004-12-10 プラズマ反応器のエッチング速度ドリフトを低減するための温度制御されたホットエッジリングアセンブリ Expired - Lifetime JP4913603B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/736,666 US7244336B2 (en) 2003-12-17 2003-12-17 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift
US10/736,666 2003-12-17
PCT/US2004/041768 WO2005059962A2 (en) 2003-12-17 2004-12-10 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift

Publications (3)

Publication Number Publication Date
JP2007515081A JP2007515081A (ja) 2007-06-07
JP2007515081A5 true JP2007515081A5 (enExample) 2008-02-07
JP4913603B2 JP4913603B2 (ja) 2012-04-11

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Family Applications (1)

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JP2006545785A Expired - Lifetime JP4913603B2 (ja) 2003-12-17 2004-12-10 プラズマ反応器のエッチング速度ドリフトを低減するための温度制御されたホットエッジリングアセンブリ

Country Status (7)

Country Link
US (1) US7244336B2 (enExample)
EP (1) EP1706898B1 (enExample)
JP (1) JP4913603B2 (enExample)
KR (1) KR101131022B1 (enExample)
CN (1) CN100474521C (enExample)
TW (1) TWI368274B (enExample)
WO (1) WO2005059962A2 (enExample)

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