TWI368274B - Temperature controlled hot edge ring assembly, plasma processing apparatus and method of reducing process drift in a plasma processing system - Google Patents

Temperature controlled hot edge ring assembly, plasma processing apparatus and method of reducing process drift in a plasma processing system

Info

Publication number
TWI368274B
TWI368274B TW093139170A TW93139170A TWI368274B TW I368274 B TWI368274 B TW I368274B TW 093139170 A TW093139170 A TW 093139170A TW 93139170 A TW93139170 A TW 93139170A TW I368274 B TWI368274 B TW I368274B
Authority
TW
Taiwan
Prior art keywords
plasma processing
ring assembly
temperature controlled
edge ring
processing apparatus
Prior art date
Application number
TW093139170A
Other languages
English (en)
Chinese (zh)
Other versions
TW200525635A (en
Inventor
Andreas Fischer
Peter Loewenhardt
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200525635A publication Critical patent/TW200525635A/zh
Application granted granted Critical
Publication of TWI368274B publication Critical patent/TWI368274B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW093139170A 2003-12-17 2004-12-16 Temperature controlled hot edge ring assembly, plasma processing apparatus and method of reducing process drift in a plasma processing system TWI368274B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/736,666 US7244336B2 (en) 2003-12-17 2003-12-17 Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift

Publications (2)

Publication Number Publication Date
TW200525635A TW200525635A (en) 2005-08-01
TWI368274B true TWI368274B (en) 2012-07-11

Family

ID=34677226

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093139170A TWI368274B (en) 2003-12-17 2004-12-16 Temperature controlled hot edge ring assembly, plasma processing apparatus and method of reducing process drift in a plasma processing system

Country Status (7)

Country Link
US (1) US7244336B2 (enExample)
EP (1) EP1706898B1 (enExample)
JP (1) JP4913603B2 (enExample)
KR (1) KR101131022B1 (enExample)
CN (1) CN100474521C (enExample)
TW (1) TWI368274B (enExample)
WO (1) WO2005059962A2 (enExample)

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CN100474521C (zh) 2009-04-01
KR101131022B1 (ko) 2012-03-29
JP4913603B2 (ja) 2012-04-11
EP1706898A2 (en) 2006-10-04
US20050133164A1 (en) 2005-06-23
EP1706898A4 (en) 2010-01-20
US7244336B2 (en) 2007-07-17
CN1914712A (zh) 2007-02-14
WO2005059962A3 (en) 2006-02-23
WO2005059962A2 (en) 2005-06-30
KR20060127041A (ko) 2006-12-11
TW200525635A (en) 2005-08-01
JP2007515081A (ja) 2007-06-07
EP1706898B1 (en) 2017-09-20

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