JP2007300128A - 両面受光構成 - Google Patents
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- JP2007300128A JP2007300128A JP2007122466A JP2007122466A JP2007300128A JP 2007300128 A JP2007300128 A JP 2007300128A JP 2007122466 A JP2007122466 A JP 2007122466A JP 2007122466 A JP2007122466 A JP 2007122466A JP 2007300128 A JP2007300128 A JP 2007300128A
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
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- PEUPIGGLJVUNEU-UHFFFAOYSA-N nickel silicon Chemical compound [Si].[Ni] PEUPIGGLJVUNEU-UHFFFAOYSA-N 0.000 description 2
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
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- 229910017052 cobalt Inorganic materials 0.000 description 1
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- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
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- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
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- QHSJIZLJUFMIFP-UHFFFAOYSA-N ethene;1,1,2,2-tetrafluoroethene Chemical compound C=C.FC(F)=C(F)F QHSJIZLJUFMIFP-UHFFFAOYSA-N 0.000 description 1
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- 229910052761 rare earth metal Inorganic materials 0.000 description 1
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- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
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Abstract
【解決手段】第一の面と第二の面とを有する半導体層と、半導体層の第一の面に形成される第一の不活性化層、及び半導体層の第二の面に形成される第二の不活性化層と、第一及び第二の不活性化層に形成されると共に、半導体層の第一の面及び第二の面に選択的に接続された複数の金属化部分と、を有する両面セルを含み、少なくとも一部の金属化部分が、比較的狭幅で比較的高さのある、第一及び第二の不活性化層から上方向に延出する長尺の金属構造体を含む両面受光構成により上記課題を解決する。
【選択図】図2
Description
Claims (6)
- 第一の面と第二の面とを有する半導体層と、
前記半導体層の前記第一の面に形成される第一の不活性化層、及び前記半導体層の前記第二の面に形成される第二の不活性化層と、
前記第一及び第二の不活性化層に形成されると共に、前記半導体層の前記第一の面及び前記第二の面に選択的に接続された複数の金属化部分と、
を有する両面セルを含み、
少なくとも一部の金属化部分が、比較的狭幅で比較的高さのある、前記第一及び第二の不活性化層から上方向に延出する長尺の金属構造体を含むことを特徴とする、
両面受光構成。 - 更に、相互に電気的に接触して両面受光太陽電池モジュールを形成する複数の両面セルと、両面受光太陽電池の裏面へ光を反射させることを可能とした構造と一体に形成されるガラスもしくはプラスチック層上の反射体と、を含むことを特徴とする請求項1に記載の受光構成。
- 前記両面セルは、プラスチック積層板表面層及びガラス裏面層を備えた両面セルモジュール内に形成されることを特徴とする請求項2に記載の受光構成。
- 前記半導体層の厚みが約150ミクロン以下であり、前記第一及び第二の面上の金属化部分は略同一の機械的モーメントを有することを特徴とする請求項1に記載の受光構成。
- 前記金属化部分は前記第一及び第二の面の10%未満を被覆することを特徴とする請求項1に記載の受光構成。
- 半導体層と、1つ以上のドープ領域と、第一の面と、第二の面と、前記第一の面及び前記第二の面上に配置された複数の導電線とを含む両面光電デバイスの製造方法であって、前記方法は、
前記半導体の前記第一の面及び前記第二の面の各々にブランケット不活性化層を形成することと、
前記半導体層の前記ドープ領域と接触する前記導電線を布設するダイレクト書込み金属化装置構成を使用することと、
を含む方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/416,707 US20070107773A1 (en) | 2005-11-17 | 2006-05-03 | Bifacial cell with extruded gridline metallization |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007300128A true JP2007300128A (ja) | 2007-11-15 |
Family
ID=38292736
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2007122466A Pending JP2007300128A (ja) | 2006-05-03 | 2007-05-07 | 両面受光構成 |
Country Status (3)
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US (2) | US20070107773A1 (ja) |
EP (1) | EP1852917A3 (ja) |
JP (1) | JP2007300128A (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010074123A (ja) * | 2008-09-19 | 2010-04-02 | ▲ゆ▼晶能源科技股▲分▼有限公司 | ソーラバッテリのパネル構造およびパネル電極の製造方法 |
JP2010141250A (ja) * | 2008-12-15 | 2010-06-24 | Dainippon Printing Co Ltd | 有機薄膜太陽電池およびその製造方法 |
WO2010126572A3 (en) * | 2009-05-01 | 2011-01-27 | Calisolar, Inc. | Bifacial solar cells with back surface reflector |
WO2011036802A1 (ja) * | 2009-09-28 | 2011-03-31 | トヨタ自動車株式会社 | 太陽電池モジュールの製造方法及び太陽電池モジュール用駆体 |
JP2011249418A (ja) * | 2010-05-24 | 2011-12-08 | Mitsubishi Electric Corp | 光起電力素子モジュールおよびその製造方法 |
TWI474496B (zh) * | 2010-04-16 | 2015-02-21 | Solarworld Innovations Gmbh | 用於安裝複數個接觸導線至一光伏電池之一表面之方法及裝置,光伏電池及光伏模組 |
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US7790574B2 (en) | 2004-12-20 | 2010-09-07 | Georgia Tech Research Corporation | Boron diffusion in silicon devices |
US7871664B2 (en) * | 2006-03-23 | 2011-01-18 | Guardian Industries Corp. | Parabolic trough or dish reflector for use in concentrating solar power apparatus and method of making same |
WO2008045511A2 (en) * | 2006-10-11 | 2008-04-17 | Gamma Solar | Photovoltaic solar module comprising bifacial solar cells |
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Also Published As
Publication number | Publication date |
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US20070107773A1 (en) | 2007-05-17 |
EP1852917A3 (en) | 2009-12-02 |
EP1852917A2 (en) | 2007-11-07 |
US20090239332A1 (en) | 2009-09-24 |
US8399283B2 (en) | 2013-03-19 |
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