JP2007019486A5 - - Google Patents
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- Publication number
- JP2007019486A5 JP2007019486A5 JP2006158919A JP2006158919A JP2007019486A5 JP 2007019486 A5 JP2007019486 A5 JP 2007019486A5 JP 2006158919 A JP2006158919 A JP 2006158919A JP 2006158919 A JP2006158919 A JP 2006158919A JP 2007019486 A5 JP2007019486 A5 JP 2007019486A5
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- porous silicon
- group
- producing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 14
- 229910021426 porous silicon Inorganic materials 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 10
- 239000011521 glass Substances 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 4
- 125000000217 alkyl group Chemical group 0.000 claims 3
- 239000003795 chemical substances by application Substances 0.000 claims 3
- 239000002904 solvent Substances 0.000 claims 3
- 125000003545 alkoxy group Chemical group 0.000 claims 2
- 239000012298 atmosphere Substances 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 125000004106 butoxy group Chemical group [*]OC([H])([H])C([H])([H])C(C([H])([H])[H])([H])[H] 0.000 claims 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 125000001301 ethoxy group Chemical group [H]C([H])([H])C([H])([H])O* 0.000 claims 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims 1
- 125000003253 isopropoxy group Chemical group [H]C([H])([H])C([H])(O*)C([H])([H])[H] 0.000 claims 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 claims 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 1
- 239000003361 porogen Substances 0.000 claims 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 239000013557 residual solvent Substances 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 0 C[C@@]1C=CC(CCC2*C2)CC1 Chemical compound C[C@@]1C=CC(CCC2*C2)CC1 0.000 description 2
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2005-0048147 | 2005-06-07 | ||
| KR1020050048147A KR100685734B1 (ko) | 2005-06-07 | 2005-06-07 | 다공성 스핀 온 글래스 조성물, 이의 제조 방법 및 이를이용한 다공성 실리콘 산화막 제조 방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007019486A JP2007019486A (ja) | 2007-01-25 |
| JP2007019486A5 true JP2007019486A5 (enExample) | 2009-07-23 |
| JP4955314B2 JP4955314B2 (ja) | 2012-06-20 |
Family
ID=37494723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006158919A Expired - Fee Related JP4955314B2 (ja) | 2005-06-07 | 2006-06-07 | 多孔性シリコン酸化膜の製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7517815B2 (enExample) |
| JP (1) | JP4955314B2 (enExample) |
| KR (1) | KR100685734B1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009044960A1 (en) * | 2007-10-02 | 2009-04-09 | Cheil Industries Inc. | Gap-filling composition with excellent shelf life by end-capping |
| JP5621486B2 (ja) * | 2009-10-06 | 2014-11-12 | 三菱化学株式会社 | シリカ系多孔質体の製造方法 |
| US20110232677A1 (en) * | 2010-03-29 | 2011-09-29 | Tokyo Electron Limited | Method for cleaning low-k dielectrics |
| KR20180013520A (ko) * | 2016-07-29 | 2018-02-07 | 에스케이하이닉스 주식회사 | 미세 갭필용 중합체 및 이를 이용한 반도체 소자의 제조 방법 |
| KR102650216B1 (ko) | 2018-03-09 | 2024-03-21 | 삼성전자주식회사 | 산화물층의 형성 방법 및 반도체 소자의 제조 방법 |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999003926A1 (en) | 1997-07-15 | 1999-01-28 | Asahi Kasei Kogyo Kabushiki Kaisha | Alkoxysilane/organic polymer composition for thin insulating film production and use thereof |
| AU756688B2 (en) * | 1998-06-05 | 2003-01-23 | Georgia Tech Research Corporation | Porous insulating compounds and method for making same |
| US6662631B2 (en) * | 1998-08-28 | 2003-12-16 | Interuniversitair Microelektronica Centrum | Method and apparatus for characterization of porous films |
| JP4368498B2 (ja) * | 2000-05-16 | 2009-11-18 | Ｎｅｃエレクトロニクス株式会社 | 半導体装置、半導体ウェーハおよびこれらの製造方法 |
| JP2002261092A (ja) * | 2001-02-27 | 2002-09-13 | Nec Corp | 半導体装置の製造方法 |
| US6652975B2 (en) * | 2001-03-02 | 2003-11-25 | Lucent Technologies Inc. | Adherent silicones |
| US6670285B2 (en) * | 2001-03-14 | 2003-12-30 | International Business Machines Corporation | Nitrogen-containing polymers as porogens in the preparation of highly porous, low dielectric constant materials |
| KR100366639B1 (ko) * | 2001-03-23 | 2003-01-06 | 삼성전자 주식회사 | 다공성 산화막 플러그에 의한 저저항 컨택 형성방법 및이를 이용한 반도체 장치의 형성방법 |
| US6780499B2 (en) * | 2001-05-03 | 2004-08-24 | International Business Machines Corporation | Ordered two-phase dielectric film, and semiconductor device containing the same |
| JP3924501B2 (ja) | 2001-06-25 | 2007-06-06 | Ｎｅｃエレクトロニクス株式会社 | 集積回路装置の製造方法 |
| KR100488347B1 (ko) | 2002-10-31 | 2005-05-10 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막의형성방법 |
| EP1566836A1 (en) * | 2002-11-27 | 2005-08-24 | Tokyo Ohka Kogyo Co., Ltd. | Semiconductor multilayer interconnection forming method |
| JP2004311532A (ja) | 2003-04-02 | 2004-11-04 | Semiconductor Leading Edge Technologies Inc | 多孔質膜の形成方法 |
| JP4465233B2 (ja) * | 2003-06-30 | 2010-05-19 | 三星電子株式会社 | 多官能性環状シロキサン化合物、この化合物から製造されたシロキサン系重合体及びこの重合体を用いた絶縁膜の製造方法 |
| KR100507967B1 (ko) | 2003-07-01 | 2005-08-10 | 삼성전자주식회사 | 실록산계 수지 및 이를 이용한 반도체 층간 절연막 |
| US7268432B2 (en) * | 2003-10-10 | 2007-09-11 | International Business Machines Corporation | Interconnect structures with engineered dielectrics with nanocolumnar porosity |
| KR20050040275A (ko) * | 2003-10-28 | 2005-05-03 | 삼성전자주식회사 | 절연막 형성용 조성물 및 이를 이용한 절연막 또는 절연막패턴의 형성방법 |
| US8053159B2 (en) * | 2003-11-18 | 2011-11-08 | Honeywell International Inc. | Antireflective coatings for via fill and photolithography applications and methods of preparation thereof |
| KR100572801B1 (ko) * | 2003-12-23 | 2006-04-19 | 삼성코닝 주식회사 | 기계적 특성이 우수한 절연막 코팅 조성물 |
| KR100632473B1 (ko) * | 2004-08-03 | 2006-10-09 | 삼성전자주식회사 | 염기성 물질 확산 장벽막을 사용하는 미세 전자 소자의듀얼 다마신 배선의 제조 방법 |
| KR100745986B1 (ko) * | 2004-12-08 | 2007-08-06 | 삼성전자주식회사 | 다공 생성 물질을 포함하는 충전재를 사용하는 미세 전자소자의 듀얼 다마신 배선의 제조 방법 |
-
2005
- 2005-06-07 KR KR1020050048147A patent/KR100685734B1/ko not_active Expired - Fee Related
-
2006
- 2006-06-05 US US11/446,152 patent/US7517815B2/en not_active Expired - Fee Related
- 2006-06-07 JP JP2006158919A patent/JP4955314B2/ja not_active Expired - Fee Related
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