TWI314936B - - Google Patents

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Publication number
TWI314936B
TWI314936B TW094115183A TW94115183A TWI314936B TW I314936 B TWI314936 B TW I314936B TW 094115183 A TW094115183 A TW 094115183A TW 94115183 A TW94115183 A TW 94115183A TW I314936 B TWI314936 B TW I314936B
Authority
TW
Taiwan
Prior art keywords
decane
forming
film
cerium oxide
group
Prior art date
Application number
TW094115183A
Other languages
English (en)
Chinese (zh)
Other versions
TW200604253A (en
Inventor
Akiyama Masahiro
Kurosawa Takahiko
Nakagawa Hisashi
Shiota Atsushi
Original Assignee
Jsr Corporatio
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporatio filed Critical Jsr Corporatio
Publication of TW200604253A publication Critical patent/TW200604253A/zh
Application granted granted Critical
Publication of TWI314936B publication Critical patent/TWI314936B/zh

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Landscapes

  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW094115183A 2004-05-11 2005-05-11 Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film TW200604253A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004141200 2004-05-11

Publications (2)

Publication Number Publication Date
TW200604253A TW200604253A (en) 2006-02-01
TWI314936B true TWI314936B (enExample) 2009-09-21

Family

ID=38019351

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094115183A TW200604253A (en) 2004-05-11 2005-05-11 Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film

Country Status (3)

Country Link
JP (1) JPWO2005108469A1 (enExample)
CN (3) CN1957020B (enExample)
TW (1) TW200604253A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009008041A1 (ja) * 2007-07-06 2009-01-15 Fujitsu Limited 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
EP2058844A1 (en) * 2007-10-30 2009-05-13 Interuniversitair Microelektronica Centrum (IMEC) Method of forming a semiconductor device
JP5583551B2 (ja) * 2009-11-04 2014-09-03 三星電子株式会社 有機シリケ−ト化合物を含む組成物およびフィルム
JP6462876B2 (ja) * 2015-07-09 2019-01-30 東京応化工業株式会社 ケイ素含有樹脂組成物
JP6641217B2 (ja) * 2016-03-30 2020-02-05 東京応化工業株式会社 金属酸化物膜形成用塗布剤及び金属酸化物膜を有する基体の製造方法
CN106110906B (zh) * 2016-07-15 2018-10-19 常州大学 一种亲水性有机硅膜的制备方法
JP6999408B2 (ja) 2016-12-28 2022-02-04 東京応化工業株式会社 樹脂組成物、樹脂組成物の製造方法、膜形成方法及び硬化物
CN108917582A (zh) * 2018-03-30 2018-11-30 华东理工大学 应变传感器及其制造方法
CN113677744B (zh) * 2019-04-08 2024-08-23 默克专利有限公司 包含嵌段共聚物的组合物和使用该组合物生产硅质膜的方法
CN114269884A (zh) 2019-08-21 2022-04-01 恩特格里斯公司 用于高选择性氮化硅蚀刻的改良调配物
CN112563661B (zh) * 2020-12-07 2022-05-27 界首市天鸿新材料股份有限公司 环保型纤维素基隔膜的制备方法及其在锂电池中的应用

Also Published As

Publication number Publication date
CN1957020B (zh) 2011-06-08
CN1957020A (zh) 2007-05-02
JPWO2005108469A1 (ja) 2008-03-21
CN1954017A (zh) 2007-04-25
CN1950473B (zh) 2010-10-27
CN1950473A (zh) 2007-04-18
TW200604253A (en) 2006-02-01

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