CN1957020B - 有机二氧化硅系膜及形成法、布线结构体、半导体装置及膜形成用组合物 - Google Patents

有机二氧化硅系膜及形成法、布线结构体、半导体装置及膜形成用组合物 Download PDF

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Publication number
CN1957020B
CN1957020B CN2005800150934A CN200580015093A CN1957020B CN 1957020 B CN1957020 B CN 1957020B CN 2005800150934 A CN2005800150934 A CN 2005800150934A CN 200580015093 A CN200580015093 A CN 200580015093A CN 1957020 B CN1957020 B CN 1957020B
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CN
China
Prior art keywords
silane
based film
film
organic silica
butoxy
Prior art date
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Expired - Fee Related
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CN2005800150934A
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English (en)
Chinese (zh)
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CN1957020A (zh
Inventor
秋山将宏
中川恭志
山中达也
盐田淳
黑泽孝彦
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JSR Corp
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JSR Corp
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Priority claimed from JP2005050590A external-priority patent/JP5110239B2/ja
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Publication of CN1957020A publication Critical patent/CN1957020A/zh
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Publication of CN1957020B publication Critical patent/CN1957020B/zh
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  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
CN2005800150934A 2004-05-11 2005-04-28 有机二氧化硅系膜及形成法、布线结构体、半导体装置及膜形成用组合物 Expired - Fee Related CN1957020B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP141200/2004 2004-05-11
JP2004141200 2004-05-11
JP050590/2005 2005-02-25
JP2005050590A JP5110239B2 (ja) 2004-05-11 2005-02-25 有機シリカ系膜の形成方法、膜形成用組成物
PCT/JP2005/008223 WO2005108468A1 (ja) 2004-05-11 2005-04-28 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物

Publications (2)

Publication Number Publication Date
CN1957020A CN1957020A (zh) 2007-05-02
CN1957020B true CN1957020B (zh) 2011-06-08

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ID=38019351

Family Applications (3)

Application Number Title Priority Date Filing Date
CN2005800150934A Expired - Fee Related CN1957020B (zh) 2004-05-11 2005-04-28 有机二氧化硅系膜及形成法、布线结构体、半导体装置及膜形成用组合物
CN2005800146286A Expired - Fee Related CN1950473B (zh) 2004-05-11 2005-04-28 绝缘膜形成用组合物和其制法及二氧化硅系绝缘膜和其形成法
CNA2005800150690A Pending CN1954017A (zh) 2004-05-11 2005-05-11 有机二氧化硅系膜及形成法、布线结构体、半导体装置及膜形成用组合物

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN2005800146286A Expired - Fee Related CN1950473B (zh) 2004-05-11 2005-04-28 绝缘膜形成用组合物和其制法及二氧化硅系绝缘膜和其形成法
CNA2005800150690A Pending CN1954017A (zh) 2004-05-11 2005-05-11 有机二氧化硅系膜及形成法、布线结构体、半导体装置及膜形成用组合物

Country Status (3)

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JP (1) JPWO2005108469A1 (enExample)
CN (3) CN1957020B (enExample)
TW (1) TW200604253A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009008041A1 (ja) * 2007-07-06 2009-01-15 Fujitsu Limited 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
EP2058844A1 (en) 2007-10-30 2009-05-13 Interuniversitair Microelektronica Centrum (IMEC) Method of forming a semiconductor device
KR101824617B1 (ko) * 2009-11-04 2018-03-14 삼성전자주식회사 유기실리케이트 화합물 및 이를 포함하는 조성물과 필름
JP6462876B2 (ja) * 2015-07-09 2019-01-30 東京応化工業株式会社 ケイ素含有樹脂組成物
JP6641217B2 (ja) * 2016-03-30 2020-02-05 東京応化工業株式会社 金属酸化物膜形成用塗布剤及び金属酸化物膜を有する基体の製造方法
CN106110906B (zh) * 2016-07-15 2018-10-19 常州大学 一种亲水性有机硅膜的制备方法
JP6999408B2 (ja) 2016-12-28 2022-02-04 東京応化工業株式会社 樹脂組成物、樹脂組成物の製造方法、膜形成方法及び硬化物
CN108917582A (zh) * 2018-03-30 2018-11-30 华东理工大学 应变传感器及其制造方法
WO2020207950A1 (en) * 2019-04-08 2020-10-15 Merck Patent Gmbh Composition comprising block copolymer, and method for producing siliceous film using the same
TWI851797B (zh) * 2019-08-21 2024-08-11 美商恩特葛瑞斯股份有限公司 用於高選擇性氮化矽蝕刻之改良調配物
CN112563661B (zh) * 2020-12-07 2022-05-27 界首市天鸿新材料股份有限公司 环保型纤维素基隔膜的制备方法及其在锂电池中的应用

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP平5-105759A 1993.04.27

Also Published As

Publication number Publication date
TWI314936B (enExample) 2009-09-21
JPWO2005108469A1 (ja) 2008-03-21
CN1950473A (zh) 2007-04-18
TW200604253A (en) 2006-02-01
CN1957020A (zh) 2007-05-02
CN1954017A (zh) 2007-04-25
CN1950473B (zh) 2010-10-27

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