JP2006526287A - 半導体装置のための終端構造及びこの構造の製造方法 - Google Patents

半導体装置のための終端構造及びこの構造の製造方法 Download PDF

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Publication number
JP2006526287A
JP2006526287A JP2006508423A JP2006508423A JP2006526287A JP 2006526287 A JP2006526287 A JP 2006526287A JP 2006508423 A JP2006508423 A JP 2006508423A JP 2006508423 A JP2006508423 A JP 2006508423A JP 2006526287 A JP2006526287 A JP 2006526287A
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JP
Japan
Prior art keywords
lateral
gate
active region
semiconductor device
devices
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Withdrawn
Application number
JP2006508423A
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English (en)
Japanese (ja)
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JP2006526287A5 (https=
Inventor
レイモンド、ジェイ．グローバー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of JP2006526287A publication Critical patent/JP2006526287A/ja
Publication of JP2006526287A5 publication Critical patent/JP2006526287A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006508423A 2003-05-31 2004-05-21 半導体装置のための終端構造及びこの構造の製造方法 Withdrawn JP2006526287A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0312514.3A GB0312514D0 (en) 2003-05-31 2003-05-31 Termination structures for semiconductor devices and the manufacture thereof
PCT/IB2004/001791 WO2004107449A1 (en) 2003-05-31 2004-05-21 Termination structures for semiconductor devices and the manufacture thereof

Publications (2)

Publication Number Publication Date
JP2006526287A true JP2006526287A (ja) 2006-11-16
JP2006526287A5 JP2006526287A5 (https=) 2007-07-05

Family

ID=9959102

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006508423A Withdrawn JP2006526287A (ja) 2003-05-31 2004-05-21 半導体装置のための終端構造及びこの構造の製造方法

Country Status (7)

Country Link
US (1) US20080116520A1 (https=)
EP (1) EP1634337A1 (https=)
JP (1) JP2006526287A (https=)
KR (1) KR20060036393A (https=)
CN (1) CN100442537C (https=)
GB (1) GB0312514D0 (https=)
WO (1) WO2004107449A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4913336B2 (ja) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
EP1908119B1 (de) * 2005-07-27 2012-04-18 Infineon Technologies Austria AG Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
DE102005061210B4 (de) * 2005-12-21 2009-05-14 Infineon Technologies Austria Ag Halbleiterbauelement mit einem vorderseitigen und einem rückseitigen pn-Übergang sowie zugehöriges Herstellungsverfahren
US7564096B2 (en) 2007-02-09 2009-07-21 Fairchild Semiconductor Corporation Scalable power field effect transistor with improved heavy body structure and method of manufacture
JP2012064849A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置
CN102569388B (zh) * 2010-12-23 2014-09-10 无锡华润上华半导体有限公司 半导体器件及其制造方法
US8598655B1 (en) * 2012-08-03 2013-12-03 Infineon Technologies Dresden Gmbh Semiconductor device and method for manufacturing a semiconductor device
CN106024866B (zh) * 2016-07-25 2019-03-29 电子科技大学 一种功率半导体器件的沟槽型终端结构
KR102281493B1 (ko) * 2017-02-03 2021-07-23 매그나칩 반도체 유한회사 전력 반도체 소자 및 그 제조 방법
KR102463902B1 (ko) * 2017-12-08 2022-11-08 한국전자통신연구원 다이오드를 내장한 mos 구조의 사이리스터 소자

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2689703B2 (ja) 1989-08-03 1997-12-10 富士電機株式会社 Ｍｏｓ型半導体装置
US5557127A (en) * 1995-03-23 1996-09-17 International Rectifier Corporation Termination structure for mosgated device with reduced mask count and process for its manufacture
JP3191747B2 (ja) * 1997-11-13 2001-07-23 富士電機株式会社 Ｍｏｓ型半導体素子
DE59902506D1 (de) * 1999-01-11 2002-10-02 Fraunhofer Ges Forschung Mos-leistungsbauelement und verfahren zum herstellen desselben
US6204097B1 (en) * 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
JP4054155B2 (ja) * 2000-02-01 2008-02-27 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20080116520A1 (en) 2008-05-22
WO2004107449A1 (en) 2004-12-09
KR20060036393A (ko) 2006-04-28
GB0312514D0 (en) 2003-07-09
CN100442537C (zh) 2008-12-10
EP1634337A1 (en) 2006-03-15
CN1799144A (zh) 2006-07-05

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