CN100442537C - 半导体器件的端子结构及其制造方法 - Google Patents

半导体器件的端子结构及其制造方法 Download PDF

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Publication number
CN100442537C
CN100442537C CNB2004800148427A CN200480014842A CN100442537C CN 100442537 C CN100442537 C CN 100442537C CN B2004800148427 A CNB2004800148427 A CN B2004800148427A CN 200480014842 A CN200480014842 A CN 200480014842A CN 100442537 C CN100442537 C CN 100442537C
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CN
China
Prior art keywords
gate
active area
zener diode
gate electrode
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2004800148427A
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English (en)
Chinese (zh)
Other versions
CN1799144A (zh
Inventor
R·J·格罗维
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
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Koninklijke Philips Electronics NV
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Publication of CN1799144A publication Critical patent/CN1799144A/zh
Application granted granted Critical
Publication of CN100442537C publication Critical patent/CN100442537C/zh
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Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
CNB2004800148427A 2003-05-31 2004-05-21 半导体器件的端子结构及其制造方法 Expired - Fee Related CN100442537C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0312514.3A GB0312514D0 (en) 2003-05-31 2003-05-31 Termination structures for semiconductor devices and the manufacture thereof
GB0312514.3 2003-05-31

Publications (2)

Publication Number Publication Date
CN1799144A CN1799144A (zh) 2006-07-05
CN100442537C true CN100442537C (zh) 2008-12-10

Family

ID=9959102

Family Applications (1)

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CNB2004800148427A Expired - Fee Related CN100442537C (zh) 2003-05-31 2004-05-21 半导体器件的端子结构及其制造方法

Country Status (7)

Country Link
US (1) US20080116520A1 (https=)
EP (1) EP1634337A1 (https=)
JP (1) JP2006526287A (https=)
KR (1) KR20060036393A (https=)
CN (1) CN100442537C (https=)
GB (1) GB0312514D0 (https=)
WO (1) WO2004107449A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4913336B2 (ja) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
EP1908119B1 (de) * 2005-07-27 2012-04-18 Infineon Technologies Austria AG Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
DE102005061210B4 (de) * 2005-12-21 2009-05-14 Infineon Technologies Austria Ag Halbleiterbauelement mit einem vorderseitigen und einem rückseitigen pn-Übergang sowie zugehöriges Herstellungsverfahren
US7564096B2 (en) 2007-02-09 2009-07-21 Fairchild Semiconductor Corporation Scalable power field effect transistor with improved heavy body structure and method of manufacture
JP2012064849A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置
CN102569388B (zh) * 2010-12-23 2014-09-10 无锡华润上华半导体有限公司 半导体器件及其制造方法
US8598655B1 (en) * 2012-08-03 2013-12-03 Infineon Technologies Dresden Gmbh Semiconductor device and method for manufacturing a semiconductor device
CN106024866B (zh) * 2016-07-25 2019-03-29 电子科技大学 一种功率半导体器件的沟槽型终端结构
KR102281493B1 (ko) * 2017-02-03 2021-07-23 매그나칩 반도체 유한회사 전력 반도체 소자 및 그 제조 방법
KR102463902B1 (ko) * 2017-12-08 2022-11-08 한국전자통신연구원 다이오드를 내장한 mos 구조의 사이리스터 소자

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5557127A (en) * 1995-03-23 1996-09-17 International Rectifier Corporation Termination structure for mosgated device with reduced mask count and process for its manufacture
US6204097B1 (en) * 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
US6407413B1 (en) * 2000-02-01 2002-06-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with guard ring and Zener diode layer thereover
US6462376B1 (en) * 1999-01-11 2002-10-08 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Power MOS element and method for producing the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2689703B2 (ja) 1989-08-03 1997-12-10 富士電機株式会社 Ｍｏｓ型半導体装置
JP3191747B2 (ja) * 1997-11-13 2001-07-23 富士電機株式会社 Ｍｏｓ型半導体素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5557127A (en) * 1995-03-23 1996-09-17 International Rectifier Corporation Termination structure for mosgated device with reduced mask count and process for its manufacture
US6462376B1 (en) * 1999-01-11 2002-10-08 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Power MOS element and method for producing the same
US6204097B1 (en) * 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
US6407413B1 (en) * 2000-02-01 2002-06-18 Mitsubishi Denki Kabushiki Kaisha Semiconductor device with guard ring and Zener diode layer thereover

Also Published As

Publication number Publication date
US20080116520A1 (en) 2008-05-22
WO2004107449A1 (en) 2004-12-09
KR20060036393A (ko) 2006-04-28
GB0312514D0 (en) 2003-07-09
JP2006526287A (ja) 2006-11-16
EP1634337A1 (en) 2006-03-15
CN1799144A (zh) 2006-07-05

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SE01 Entry into force of request for substantive examination
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Owner name: NXP CO., LTD.

Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V.

Effective date: 20071012

C41 Transfer of patent application or patent right or utility model
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Effective date of registration: 20071012

Address after: Holland Ian Deho Finn

Applicant after: Koninkl Philips Electronics NV

Address before: Holland Ian Deho Finn

Applicant before: Koninklijke Philips Electronics N.V.

C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081210

Termination date: 20130521