GB0312514D0 - Termination structures for semiconductor devices and the manufacture thereof - Google Patents

Termination structures for semiconductor devices and the manufacture thereof

Info

Publication number
GB0312514D0
GB0312514D0 GBGB0312514.3A GB0312514A GB0312514D0 GB 0312514 D0 GB0312514 D0 GB 0312514D0 GB 0312514 A GB0312514 A GB 0312514A GB 0312514 D0 GB0312514 D0 GB 0312514D0
Authority
GB
United Kingdom
Prior art keywords
manufacture
semiconductor devices
termination structures
termination
structures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0312514.3A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Priority to GBGB0312514.3A priority Critical patent/GB0312514D0/en
Publication of GB0312514D0 publication Critical patent/GB0312514D0/en
Priority to CNB2004800148427A priority patent/CN100442537C/zh
Priority to KR1020057022794A priority patent/KR20060036393A/ko
Priority to US10/561,308 priority patent/US20080116520A1/en
Priority to JP2006508423A priority patent/JP2006526287A/ja
Priority to PCT/IB2004/001791 priority patent/WO2004107449A1/en
Priority to EP04734323A priority patent/EP1634337A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
GBGB0312514.3A 2003-05-31 2003-05-31 Termination structures for semiconductor devices and the manufacture thereof Ceased GB0312514D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
GBGB0312514.3A GB0312514D0 (en) 2003-05-31 2003-05-31 Termination structures for semiconductor devices and the manufacture thereof
CNB2004800148427A CN100442537C (zh) 2003-05-31 2004-05-21 半导体器件的端子结构及其制造方法
KR1020057022794A KR20060036393A (ko) 2003-05-31 2004-05-21 반도체 소자 및 그 형성 방법
US10/561,308 US20080116520A1 (en) 2003-05-31 2004-05-21 Termination Structures For Semiconductor Devices and the Manufacture Thereof
JP2006508423A JP2006526287A (ja) 2003-05-31 2004-05-21 半導体装置のための終端構造及びこの構造の製造方法
PCT/IB2004/001791 WO2004107449A1 (en) 2003-05-31 2004-05-21 Termination structures for semiconductor devices and the manufacture thereof
EP04734323A EP1634337A1 (en) 2003-05-31 2004-05-21 Termination structures for semiconductor devices and the manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0312514.3A GB0312514D0 (en) 2003-05-31 2003-05-31 Termination structures for semiconductor devices and the manufacture thereof

Publications (1)

Publication Number Publication Date
GB0312514D0 true GB0312514D0 (en) 2003-07-09

Family

ID=9959102

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0312514.3A Ceased GB0312514D0 (en) 2003-05-31 2003-05-31 Termination structures for semiconductor devices and the manufacture thereof

Country Status (7)

Country Link
US (1) US20080116520A1 (https=)
EP (1) EP1634337A1 (https=)
JP (1) JP2006526287A (https=)
KR (1) KR20060036393A (https=)
CN (1) CN100442537C (https=)
GB (1) GB0312514D0 (https=)
WO (1) WO2004107449A1 (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4913336B2 (ja) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
EP1908119B1 (de) * 2005-07-27 2012-04-18 Infineon Technologies Austria AG Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
DE102005061210B4 (de) * 2005-12-21 2009-05-14 Infineon Technologies Austria Ag Halbleiterbauelement mit einem vorderseitigen und einem rückseitigen pn-Übergang sowie zugehöriges Herstellungsverfahren
US7564096B2 (en) 2007-02-09 2009-07-21 Fairchild Semiconductor Corporation Scalable power field effect transistor with improved heavy body structure and method of manufacture
JP2012064849A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置
CN102569388B (zh) * 2010-12-23 2014-09-10 无锡华润上华半导体有限公司 半导体器件及其制造方法
US8598655B1 (en) * 2012-08-03 2013-12-03 Infineon Technologies Dresden Gmbh Semiconductor device and method for manufacturing a semiconductor device
CN106024866B (zh) * 2016-07-25 2019-03-29 电子科技大学 一种功率半导体器件的沟槽型终端结构
KR102281493B1 (ko) * 2017-02-03 2021-07-23 매그나칩 반도체 유한회사 전력 반도체 소자 및 그 제조 방법
KR102463902B1 (ko) * 2017-12-08 2022-11-08 한국전자통신연구원 다이오드를 내장한 mos 구조의 사이리스터 소자

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2689703B2 (ja) 1989-08-03 1997-12-10 富士電機株式会社 Ｍｏｓ型半導体装置
US5557127A (en) * 1995-03-23 1996-09-17 International Rectifier Corporation Termination structure for mosgated device with reduced mask count and process for its manufacture
JP3191747B2 (ja) * 1997-11-13 2001-07-23 富士電機株式会社 Ｍｏｓ型半導体素子
DE59902506D1 (de) * 1999-01-11 2002-10-02 Fraunhofer Ges Forschung Mos-leistungsbauelement und verfahren zum herstellen desselben
US6204097B1 (en) * 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
JP4054155B2 (ja) * 2000-02-01 2008-02-27 三菱電機株式会社 半導体装置

Also Published As

Publication number Publication date
US20080116520A1 (en) 2008-05-22
WO2004107449A1 (en) 2004-12-09
KR20060036393A (ko) 2006-04-28
CN100442537C (zh) 2008-12-10
JP2006526287A (ja) 2006-11-16
EP1634337A1 (en) 2006-03-15
CN1799144A (zh) 2006-07-05

Similar Documents

Publication Publication Date Title
GB0312512D0 (en) Termination structures for semiconductor devices and the manufacture thereof
TWI349367B (en) Semiconductor device and making thereof
TWI371061B (en) Semiconductor device and method of fabricating the same
GB0117949D0 (en) Trench-gate semiconductor devices and their manufacture
TWI350589B (en) A semiconductor device and a method of manufacturing the same
AU2003226646A8 (en) Semiconductor device
SG114787A1 (en) Semiconductor device and manufacturing method of the same
AU2003234812A8 (en) Semiconductor device
GB0122122D0 (en) Trench-gate semiconductor devices and their manufacture
SG120978A1 (en) Metal-over-metal devices and the method for manufacturing same
EP1624358A4 (en) SEMICONDUCTOR COMPONENT
TWI319261B (en) Semiconductor device
GB0403934D0 (en) Trench-gate semiconductor devices and the manufacture thereof
GB2406970B (en) Semiconductor device
EP1619570A4 (en) SEMICONDUCTOR COMPONENT
TWI339866B (en) A semiconductor device and a method of manufacturing the same
TWI348748B (en) Semiconductor device and method of fabricating the same
GB0130018D0 (en) Semiconductor devices and their manufacture
GB0312514D0 (en) Termination structures for semiconductor devices and the manufacture thereof
GB0218359D0 (en) Semiconductor Devices
GB0304623D0 (en) Methods for the fabrication of nanoscale structures and semiconductor devices
AU2003237473A8 (en) Strained-semiconductor-on-insulator device structures
GB0303162D0 (en) Trench-gate semiconductor devices and the manufacture thereof
GB0315982D0 (en) Semiconductor device
TWI348752B (en) Semiconductor device

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)