GB0303162D0 - Trench-gate semiconductor devices and the manufacture thereof - Google Patents

Trench-gate semiconductor devices and the manufacture thereof

Info

Publication number
GB0303162D0
GB0303162D0 GBGB0303162.2A GB0303162A GB0303162D0 GB 0303162 D0 GB0303162 D0 GB 0303162D0 GB 0303162 A GB0303162 A GB 0303162A GB 0303162 D0 GB0303162 D0 GB 0303162D0
Authority
GB
United Kingdom
Prior art keywords
trench
manufacture
semiconductor devices
gate semiconductor
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0303162.2A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of GB0303162D0 publication Critical patent/GB0303162D0/en
Priority to CNB038121794A priority Critical patent/CN100437942C/en
Priority to US10/515,749 priority patent/US7232726B2/en
Priority to EP03727795A priority patent/EP1514300A1/en
Priority to AU2003232995A priority patent/AU2003232995A1/en
Priority to JP2004510022A priority patent/JP2005528796A/en
Priority to PCT/IB2003/002230 priority patent/WO2003103036A1/en
Priority to KR10-2004-7019310A priority patent/KR20040111710A/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
GBGB0303162.2A 2002-05-31 2003-02-12 Trench-gate semiconductor devices and the manufacture thereof Ceased GB0303162D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
CNB038121794A CN100437942C (en) 2002-05-31 2003-05-21 Trench-gate semiconductor device and method of manufacturing
US10/515,749 US7232726B2 (en) 2002-05-31 2003-05-21 Trench-gate semiconductor device and method of manufacturing
EP03727795A EP1514300A1 (en) 2002-05-31 2003-05-21 Trench-gate semiconductor device and method of manufacturing
AU2003232995A AU2003232995A1 (en) 2002-05-31 2003-05-21 Trench-gate semiconductor device and method of manufacturing
JP2004510022A JP2005528796A (en) 2002-05-31 2003-05-21 Trench gate semiconductor device and manufacturing method
PCT/IB2003/002230 WO2003103036A1 (en) 2002-05-31 2003-05-21 Trench-gate semiconductor device and method of manufacturing
KR10-2004-7019310A KR20040111710A (en) 2002-05-31 2003-05-21 Trench-gate semiconductor device and method of manufacturing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0212564.9A GB0212564D0 (en) 2002-05-31 2002-05-31 Trench-gate semiconductor device

Publications (1)

Publication Number Publication Date
GB0303162D0 true GB0303162D0 (en) 2003-03-19

Family

ID=9937768

Family Applications (3)

Application Number Title Priority Date Filing Date
GBGB0212564.9A Ceased GB0212564D0 (en) 2002-05-31 2002-05-31 Trench-gate semiconductor device
GBGB0228809.0A Ceased GB0228809D0 (en) 2002-05-31 2002-12-11 Trench-gate semiconductor devices
GBGB0303162.2A Ceased GB0303162D0 (en) 2002-05-31 2003-02-12 Trench-gate semiconductor devices and the manufacture thereof

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GBGB0212564.9A Ceased GB0212564D0 (en) 2002-05-31 2002-05-31 Trench-gate semiconductor device
GBGB0228809.0A Ceased GB0228809D0 (en) 2002-05-31 2002-12-11 Trench-gate semiconductor devices

Country Status (3)

Country Link
KR (2) KR20050006283A (en)
AT (1) ATE528799T1 (en)
GB (3) GB0212564D0 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442609B2 (en) * 2004-09-10 2008-10-28 Infineon Technologies Ag Method of manufacturing a transistor and a method of forming a memory device with isolation trenches
US7319256B1 (en) * 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
KR100741919B1 (en) * 2006-09-12 2007-07-24 동부일렉트로닉스 주식회사 Trench type mos transistor including pn junction gate electrode, and manufacturing method thereof
JP5138274B2 (en) 2007-05-25 2013-02-06 三菱電機株式会社 Semiconductor device
KR101275458B1 (en) * 2011-12-26 2013-06-17 삼성전기주식회사 Semiconductor device and fabricating method thereof
DE102016114229B3 (en) 2016-08-01 2017-12-07 Infineon Technologies Austria Ag TRANSISTOR COMPONENT COMPRISING A FIELD ELECTRODE COMPRISING TWO LAYERS AND ITS MANUFACTURING METHOD
WO2019128587A1 (en) * 2017-12-29 2019-07-04 苏州东微半导体有限公司 Semiconductor power device
US11031478B2 (en) 2018-01-23 2021-06-08 Infineon Technologies Austria Ag Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture

Also Published As

Publication number Publication date
ATE528799T1 (en) 2011-10-15
KR20040111710A (en) 2004-12-31
KR20050006283A (en) 2005-01-15
GB0212564D0 (en) 2002-07-10
GB0228809D0 (en) 2003-01-15

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)