AU2003232995A1 - Trench-gate semiconductor device and method of manufacturing - Google Patents
Trench-gate semiconductor device and method of manufacturingInfo
- Publication number
- AU2003232995A1 AU2003232995A1 AU2003232995A AU2003232995A AU2003232995A1 AU 2003232995 A1 AU2003232995 A1 AU 2003232995A1 AU 2003232995 A AU2003232995 A AU 2003232995A AU 2003232995 A AU2003232995 A AU 2003232995A AU 2003232995 A1 AU2003232995 A1 AU 2003232995A1
- Authority
- AU
- Australia
- Prior art keywords
- trench
- manufacturing
- semiconductor device
- gate semiconductor
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- H01L2224/05554—Shape in top view being square
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7827—Vertical transistors
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0212564.9A GB0212564D0 (en) | 2002-05-31 | 2002-05-31 | Trench-gate semiconductor device |
GB0212564.9 | 2002-05-31 | ||
GB0303162.2 | 2003-02-12 | ||
GBGB0303162.2A GB0303162D0 (en) | 2002-05-31 | 2003-02-12 | Trench-gate semiconductor devices and the manufacture thereof |
PCT/IB2003/002230 WO2003103036A1 (en) | 2002-05-31 | 2003-05-21 | Trench-gate semiconductor device and method of manufacturing |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2003232995A1 true AU2003232995A1 (en) | 2003-12-19 |
Family
ID=29713388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2003232995A Abandoned AU2003232995A1 (en) | 2002-05-31 | 2003-05-21 | Trench-gate semiconductor device and method of manufacturing |
Country Status (6)
Country | Link |
---|---|
US (1) | US7232726B2 (en) |
EP (1) | EP1514300A1 (en) |
JP (1) | JP2005528796A (en) |
CN (1) | CN100437942C (en) |
AU (1) | AU2003232995A1 (en) |
WO (1) | WO2003103036A1 (en) |
Families Citing this family (46)
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AU2003228073A1 (en) * | 2002-05-31 | 2003-12-19 | Koninklijke Philips Electronics N.V. | Trench-gate semiconductor device,corresponding module and apparatus ,and method of operating the device |
US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US7183610B2 (en) * | 2004-04-30 | 2007-02-27 | Siliconix Incorporated | Super trench MOSFET including buried source electrode and method of fabricating the same |
US7550783B2 (en) * | 2004-05-11 | 2009-06-23 | Cree, Inc. | Wide bandgap HEMTs with source connected field plates |
US7573078B2 (en) * | 2004-05-11 | 2009-08-11 | Cree, Inc. | Wide bandgap transistors with multiple field plates |
US9773877B2 (en) * | 2004-05-13 | 2017-09-26 | Cree, Inc. | Wide bandgap field effect transistors with source connected field plates |
JP5259920B2 (en) | 2004-08-04 | 2013-08-07 | ローム株式会社 | Semiconductor device and manufacturing method thereof |
JP2006066573A (en) * | 2004-08-26 | 2006-03-09 | Seiko Epson Corp | Semiconductor device and method of manufacturing same |
CN100587966C (en) | 2005-03-03 | 2010-02-03 | 富士电机控股株式会社 | Semiconductor device and the method of manufacturing the same |
US11791385B2 (en) * | 2005-03-11 | 2023-10-17 | Wolfspeed, Inc. | Wide bandgap transistors with gate-source field plates |
CN102738239A (en) | 2005-05-26 | 2012-10-17 | 飞兆半导体公司 | Trench-gate field effect transistors and methods of forming the same |
CN103094348B (en) | 2005-06-10 | 2016-08-10 | 飞兆半导体公司 | Field-effect transistor |
TWI400757B (en) * | 2005-06-29 | 2013-07-01 | Fairchild Semiconductor | Methods for forming shielded gate field effect transistors |
KR100608386B1 (en) | 2005-06-30 | 2006-08-08 | 주식회사 하이닉스반도체 | Method of manufacturing semiconductor device |
CN101288176B (en) * | 2005-10-12 | 2010-08-25 | 富士电机系统株式会社 | Traverse type IGBT of SOI groove |
JP4773182B2 (en) * | 2005-10-28 | 2011-09-14 | エルピーダメモリ株式会社 | Manufacturing method of semiconductor device |
JP4817827B2 (en) * | 2005-12-09 | 2011-11-16 | 株式会社東芝 | Semiconductor device |
JP4988759B2 (en) * | 2005-12-22 | 2012-08-01 | エヌエックスピー ビー ヴィ | Manufacturing method of semiconductor devices |
TWI323498B (en) * | 2006-04-20 | 2010-04-11 | Nanya Technology Corp | Recessed gate mos transistor device and method of making the same |
WO2008012737A2 (en) * | 2006-07-24 | 2008-01-31 | Nxp B.V. | Method of manufacturing a semiconductor device and a device manufactured by the method |
US20080124870A1 (en) * | 2006-09-20 | 2008-05-29 | Chanho Park | Trench Gate FET with Self-Aligned Features |
KR101375035B1 (en) * | 2006-09-27 | 2014-03-14 | 맥스파워 세미컨덕터 인크. | Power mosfet with recessed field plate |
EP1921669B1 (en) * | 2006-11-13 | 2015-09-02 | Cree, Inc. | GaN based HEMTs with buried field plates |
KR100827538B1 (en) * | 2006-12-28 | 2008-05-06 | 주식회사 하이닉스반도체 | Semiconductor device and method for fabricating the same |
JP5205856B2 (en) * | 2007-01-11 | 2013-06-05 | 富士電機株式会社 | Power semiconductor device |
US7807576B2 (en) * | 2008-06-20 | 2010-10-05 | Fairchild Semiconductor Corporation | Structure and method for forming a thick bottom dielectric (TBD) for trench-gate devices |
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CN101694850B (en) * | 2009-10-16 | 2011-09-14 | 电子科技大学 | Carrier-storing grooved gate IGBT with P-type floating layer |
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US9847411B2 (en) | 2013-06-09 | 2017-12-19 | Cree, Inc. | Recessed field plate transistor structures |
JP2016063048A (en) * | 2014-09-17 | 2016-04-25 | 富士電機株式会社 | Trench type insulated gate bipolar transistor and method of manufacturing the same |
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JP6369886B2 (en) * | 2016-01-14 | 2018-08-08 | 新電元工業株式会社 | Semiconductor device |
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JP6896593B2 (en) * | 2017-11-22 | 2021-06-30 | 株式会社東芝 | Semiconductor devices, semiconductor device manufacturing methods, inverter circuits, drives, vehicles, and elevators |
CN108400094B (en) * | 2018-04-19 | 2020-12-25 | 济南安海半导体有限公司 | Shielded gate field effect transistor and method of manufacturing the same (hammer shape) |
CN109065625A (en) * | 2018-07-25 | 2018-12-21 | 七色堇电子科技(上海)有限公司 | A kind of groove type MOS transistor, preparation method and the electronic device comprising it |
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US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
JP2733271B2 (en) * | 1988-12-23 | 1998-03-30 | シャープ株式会社 | Method for manufacturing semiconductor device |
US5467305A (en) * | 1992-03-12 | 1995-11-14 | International Business Machines Corporation | Three-dimensional direct-write EEPROM arrays and fabrication methods |
US5998833A (en) | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
GB9826041D0 (en) * | 1998-11-28 | 1999-01-20 | Koninkl Philips Electronics Nv | Trench-gate semiconductor devices and their manufacture |
JP2000174265A (en) * | 1998-12-02 | 2000-06-23 | Matsushita Electric Works Ltd | Vertical power mosfet and its manufacture |
WO2000053552A1 (en) * | 1999-03-05 | 2000-09-14 | Mitsubishi Chemical Corporation | Squarylium compounds, filters for plasma display panels made by using the same, and plasma display panels |
US6433385B1 (en) * | 1999-05-19 | 2002-08-13 | Fairchild Semiconductor Corporation | MOS-gated power device having segmented trench and extended doping zone and process for forming same |
WO2001003278A1 (en) * | 1999-07-02 | 2001-01-11 | Koninklijke Philips Electronics N.V. | Switching arrangement and switch component for a dc-dc converter |
JP2001230414A (en) * | 2000-02-16 | 2001-08-24 | Toyota Central Res & Dev Lab Inc | Vertical semiconductor device and its manufacturing method |
EP1170803A3 (en) | 2000-06-08 | 2002-10-09 | Siliconix Incorporated | Trench gate MOSFET and method of making the same |
JP4528460B2 (en) * | 2000-06-30 | 2010-08-18 | 株式会社東芝 | Semiconductor element |
DE10038177A1 (en) | 2000-08-04 | 2002-02-21 | Infineon Technologies Ag | Semiconductor switching element with two control electrodes which can be controlled by means of a field effect |
JP4073176B2 (en) * | 2001-04-02 | 2008-04-09 | 新電元工業株式会社 | Semiconductor device and manufacturing method thereof |
-
2003
- 2003-05-21 EP EP03727795A patent/EP1514300A1/en not_active Withdrawn
- 2003-05-21 US US10/515,749 patent/US7232726B2/en not_active Expired - Fee Related
- 2003-05-21 JP JP2004510022A patent/JP2005528796A/en active Pending
- 2003-05-21 CN CNB038121794A patent/CN100437942C/en not_active Expired - Fee Related
- 2003-05-21 WO PCT/IB2003/002230 patent/WO2003103036A1/en active Application Filing
- 2003-05-21 AU AU2003232995A patent/AU2003232995A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN100437942C (en) | 2008-11-26 |
EP1514300A1 (en) | 2005-03-16 |
JP2005528796A (en) | 2005-09-22 |
WO2003103036A1 (en) | 2003-12-11 |
US7232726B2 (en) | 2007-06-19 |
US20050208722A1 (en) | 2005-09-22 |
CN1656610A (en) | 2005-08-17 |
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