ATE528799T1 - METHOD FOR OPERATING A SEMICONDUCTOR ARRANGEMENT WITH TRENCH GATE - Google Patents
METHOD FOR OPERATING A SEMICONDUCTOR ARRANGEMENT WITH TRENCH GATEInfo
- Publication number
- ATE528799T1 ATE528799T1 AT03725542T AT03725542T ATE528799T1 AT E528799 T1 ATE528799 T1 AT E528799T1 AT 03725542 T AT03725542 T AT 03725542T AT 03725542 T AT03725542 T AT 03725542T AT E528799 T1 ATE528799 T1 AT E528799T1
- Authority
- AT
- Austria
- Prior art keywords
- operating
- trench gate
- semiconductor arrangement
- semiconductor
- arrangement
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
- H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
- H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0212564.9A GB0212564D0 (en) | 2002-05-31 | 2002-05-31 | Trench-gate semiconductor device |
GBGB0228809.0A GB0228809D0 (en) | 2002-05-31 | 2002-12-11 | Trench-gate semiconductor devices |
PCT/IB2003/002233 WO2003103056A2 (en) | 2002-05-31 | 2003-05-21 | Trench-gate semiconductor device,corresponding module and apparatus ,and method of operating the device |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE528799T1 true ATE528799T1 (en) | 2011-10-15 |
Family
ID=9937768
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT03725542T ATE528799T1 (en) | 2002-05-31 | 2003-05-21 | METHOD FOR OPERATING A SEMICONDUCTOR ARRANGEMENT WITH TRENCH GATE |
Country Status (3)
Country | Link |
---|---|
KR (2) | KR20040111710A (en) |
AT (1) | ATE528799T1 (en) |
GB (3) | GB0212564D0 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7442609B2 (en) * | 2004-09-10 | 2008-10-28 | Infineon Technologies Ag | Method of manufacturing a transistor and a method of forming a memory device with isolation trenches |
US7319256B1 (en) * | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
KR100741919B1 (en) * | 2006-09-12 | 2007-07-24 | 동부일렉트로닉스 주식회사 | Trench type mos transistor including pn junction gate electrode, and manufacturing method thereof |
JP5138274B2 (en) | 2007-05-25 | 2013-02-06 | 三菱電機株式会社 | Semiconductor device |
KR101275458B1 (en) * | 2011-12-26 | 2013-06-17 | 삼성전기주식회사 | Semiconductor device and fabricating method thereof |
DE102016114229B3 (en) | 2016-08-01 | 2017-12-07 | Infineon Technologies Austria Ag | TRANSISTOR COMPONENT COMPRISING A FIELD ELECTRODE COMPRISING TWO LAYERS AND ITS MANUFACTURING METHOD |
KR102246501B1 (en) * | 2017-12-29 | 2021-04-30 | 수 조우 오리엔탈 세미컨덕터 콤퍼니 리미티드 | Semiconductor power device |
US11031478B2 (en) | 2018-01-23 | 2021-06-08 | Infineon Technologies Austria Ag | Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture |
-
2002
- 2002-05-31 GB GBGB0212564.9A patent/GB0212564D0/en not_active Ceased
- 2002-12-11 GB GBGB0228809.0A patent/GB0228809D0/en not_active Ceased
-
2003
- 2003-02-12 GB GBGB0303162.2A patent/GB0303162D0/en not_active Ceased
- 2003-05-21 KR KR10-2004-7019310A patent/KR20040111710A/en not_active Application Discontinuation
- 2003-05-21 KR KR10-2004-7019300A patent/KR20050006283A/en not_active Application Discontinuation
- 2003-05-21 AT AT03725542T patent/ATE528799T1/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20050006283A (en) | 2005-01-15 |
GB0228809D0 (en) | 2003-01-15 |
GB0212564D0 (en) | 2002-07-10 |
KR20040111710A (en) | 2004-12-31 |
GB0303162D0 (en) | 2003-03-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |