GB0228809D0 - Trench-gate semiconductor devices - Google Patents

Trench-gate semiconductor devices

Info

Publication number
GB0228809D0
GB0228809D0 GBGB0228809.0A GB0228809A GB0228809D0 GB 0228809 D0 GB0228809 D0 GB 0228809D0 GB 0228809 A GB0228809 A GB 0228809A GB 0228809 D0 GB0228809 D0 GB 0228809D0
Authority
GB
United Kingdom
Prior art keywords
trench
semiconductor devices
gate semiconductor
gate
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0228809.0A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of GB0228809D0 publication Critical patent/GB0228809D0/en
Priority to EP03725542A priority Critical patent/EP1525621B1/en
Priority to AT03725542T priority patent/ATE528799T1/en
Priority to US10/515,748 priority patent/US7122860B2/en
Priority to KR10-2004-7019300A priority patent/KR20050006283A/en
Priority to AU2003228073A priority patent/AU2003228073A1/en
Priority to PCT/IB2003/002233 priority patent/WO2003103056A2/en
Priority to JP2004510038A priority patent/JP2005528804A/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
GBGB0228809.0A 2002-05-31 2002-12-11 Trench-gate semiconductor devices Ceased GB0228809D0 (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
EP03725542A EP1525621B1 (en) 2002-05-31 2003-05-21 Method of operating a trench gate semiconductor device
AT03725542T ATE528799T1 (en) 2002-05-31 2003-05-21 METHOD FOR OPERATING A SEMICONDUCTOR ARRANGEMENT WITH TRENCH GATE
US10/515,748 US7122860B2 (en) 2002-05-31 2003-05-21 Trench-gate semiconductor devices
KR10-2004-7019300A KR20050006283A (en) 2002-05-31 2003-05-21 Trench-gate semiconductor device, corresponding module and apparatus, and method of operating the device
AU2003228073A AU2003228073A1 (en) 2002-05-31 2003-05-21 Trench-gate semiconductor device,corresponding module and apparatus ,and method of operating the device
PCT/IB2003/002233 WO2003103056A2 (en) 2002-05-31 2003-05-21 Trench-gate semiconductor device,corresponding module and apparatus ,and method of operating the device
JP2004510038A JP2005528804A (en) 2002-05-31 2003-05-21 Trench gate semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0212564.9A GB0212564D0 (en) 2002-05-31 2002-05-31 Trench-gate semiconductor device

Publications (1)

Publication Number Publication Date
GB0228809D0 true GB0228809D0 (en) 2003-01-15

Family

ID=9937768

Family Applications (3)

Application Number Title Priority Date Filing Date
GBGB0212564.9A Ceased GB0212564D0 (en) 2002-05-31 2002-05-31 Trench-gate semiconductor device
GBGB0228809.0A Ceased GB0228809D0 (en) 2002-05-31 2002-12-11 Trench-gate semiconductor devices
GBGB0303162.2A Ceased GB0303162D0 (en) 2002-05-31 2003-02-12 Trench-gate semiconductor devices and the manufacture thereof

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB0212564.9A Ceased GB0212564D0 (en) 2002-05-31 2002-05-31 Trench-gate semiconductor device

Family Applications After (1)

Application Number Title Priority Date Filing Date
GBGB0303162.2A Ceased GB0303162D0 (en) 2002-05-31 2003-02-12 Trench-gate semiconductor devices and the manufacture thereof

Country Status (3)

Country Link
KR (2) KR20050006283A (en)
AT (1) ATE528799T1 (en)
GB (3) GB0212564D0 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442609B2 (en) * 2004-09-10 2008-10-28 Infineon Technologies Ag Method of manufacturing a transistor and a method of forming a memory device with isolation trenches
US7319256B1 (en) * 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
KR100741919B1 (en) * 2006-09-12 2007-07-24 동부일렉트로닉스 주식회사 Trench type mos transistor including pn junction gate electrode, and manufacturing method thereof
JP5138274B2 (en) 2007-05-25 2013-02-06 三菱電機株式会社 Semiconductor device
KR101275458B1 (en) * 2011-12-26 2013-06-17 삼성전기주식회사 Semiconductor device and fabricating method thereof
DE102016114229B3 (en) 2016-08-01 2017-12-07 Infineon Technologies Austria Ag TRANSISTOR COMPONENT COMPRISING A FIELD ELECTRODE COMPRISING TWO LAYERS AND ITS MANUFACTURING METHOD
KR102246501B1 (en) * 2017-12-29 2021-04-30 수 조우 오리엔탈 세미컨덕터 콤퍼니 리미티드 Semiconductor power device
US11031478B2 (en) 2018-01-23 2021-06-08 Infineon Technologies Austria Ag Semiconductor device having body contacts with dielectric spacers and corresponding methods of manufacture

Also Published As

Publication number Publication date
ATE528799T1 (en) 2011-10-15
GB0212564D0 (en) 2002-07-10
GB0303162D0 (en) 2003-03-19
KR20050006283A (en) 2005-01-15
KR20040111710A (en) 2004-12-31

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)