KR20060036393A - 반도체 소자 및 그 형성 방법 - Google Patents

반도체 소자 및 그 형성 방법 Download PDF

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Publication number
KR20060036393A
KR20060036393A KR1020057022794A KR20057022794A KR20060036393A KR 20060036393 A KR20060036393 A KR 20060036393A KR 1020057022794 A KR1020057022794 A KR 1020057022794A KR 20057022794 A KR20057022794 A KR 20057022794A KR 20060036393 A KR20060036393 A KR 20060036393A
Authority
KR
South Korea
Prior art keywords
lateral
active region
gate
semiconductor device
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1020057022794A
Other languages
English (en)
Korean (ko)
Inventor
레이몬드 제이 그로버
Original Assignee
코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 코닌클리즈케 필립스 일렉트로닉스 엔.브이. filed Critical 코닌클리즈케 필립스 일렉트로닉스 엔.브이.
Publication of KR20060036393A publication Critical patent/KR20060036393A/ko
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/60—Lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components
    • H10D84/148—VDMOS having built-in components the built-in components being breakdown diodes, e.g. Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020057022794A 2003-05-31 2004-05-21 반도체 소자 및 그 형성 방법 Withdrawn KR20060036393A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0312514.3A GB0312514D0 (en) 2003-05-31 2003-05-31 Termination structures for semiconductor devices and the manufacture thereof
GB0312514.3 2003-05-31

Publications (1)

Publication Number Publication Date
KR20060036393A true KR20060036393A (ko) 2006-04-28

Family

ID=9959102

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057022794A Withdrawn KR20060036393A (ko) 2003-05-31 2004-05-21 반도체 소자 및 그 형성 방법

Country Status (7)

Country Link
US (1) US20080116520A1 (https=)
EP (1) EP1634337A1 (https=)
JP (1) JP2006526287A (https=)
KR (1) KR20060036393A (https=)
CN (1) CN100442537C (https=)
GB (1) GB0312514D0 (https=)
WO (1) WO2004107449A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101511429B1 (ko) * 2012-08-03 2015-04-10 인피니언 테크놀로지스 드레스덴 게엠베하 반도체 장치 및 반도체 장치를 제조하는 방법
KR20180090928A (ko) * 2017-02-03 2018-08-14 매그나칩 반도체 유한회사 전력 반도체 소자 및 그 제조 방법
KR20190068400A (ko) * 2017-12-08 2019-06-18 한국전자통신연구원 다이오드를 내장한 mos 구조의 사이리스터 소자

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4913336B2 (ja) * 2004-09-28 2012-04-11 ルネサスエレクトロニクス株式会社 半導体装置
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
US8461648B2 (en) 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
EP1908119B1 (de) * 2005-07-27 2012-04-18 Infineon Technologies Austria AG Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
DE102005061210B4 (de) * 2005-12-21 2009-05-14 Infineon Technologies Austria Ag Halbleiterbauelement mit einem vorderseitigen und einem rückseitigen pn-Übergang sowie zugehöriges Herstellungsverfahren
US7564096B2 (en) 2007-02-09 2009-07-21 Fairchild Semiconductor Corporation Scalable power field effect transistor with improved heavy body structure and method of manufacture
JP2012064849A (ja) * 2010-09-17 2012-03-29 Toshiba Corp 半導体装置
CN102569388B (zh) * 2010-12-23 2014-09-10 无锡华润上华半导体有限公司 半导体器件及其制造方法
CN106024866B (zh) * 2016-07-25 2019-03-29 电子科技大学 一种功率半导体器件的沟槽型终端结构

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2689703B2 (ja) 1989-08-03 1997-12-10 富士電機株式会社 Ｍｏｓ型半導体装置
US5557127A (en) * 1995-03-23 1996-09-17 International Rectifier Corporation Termination structure for mosgated device with reduced mask count and process for its manufacture
JP3191747B2 (ja) * 1997-11-13 2001-07-23 富士電機株式会社 Ｍｏｓ型半導体素子
DE59902506D1 (de) * 1999-01-11 2002-10-02 Fraunhofer Ges Forschung Mos-leistungsbauelement und verfahren zum herstellen desselben
US6204097B1 (en) * 1999-03-01 2001-03-20 Semiconductor Components Industries, Llc Semiconductor device and method of manufacture
JP4054155B2 (ja) * 2000-02-01 2008-02-27 三菱電機株式会社 半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101511429B1 (ko) * 2012-08-03 2015-04-10 인피니언 테크놀로지스 드레스덴 게엠베하 반도체 장치 및 반도체 장치를 제조하는 방법
KR20180090928A (ko) * 2017-02-03 2018-08-14 매그나칩 반도체 유한회사 전력 반도체 소자 및 그 제조 방법
US11056575B2 (en) 2017-02-03 2021-07-06 Magnachip Semiconductor, Ltd. Power semiconductor device with alternating source region and body contact region and manufacturing method thereof
US11855184B2 (en) 2017-02-03 2023-12-26 Magnachip Semiconductor, Ltd. Method of manufacturing a power semiconductor device having source region and body contact region formed between trench-type gate electrodes
KR20190068400A (ko) * 2017-12-08 2019-06-18 한국전자통신연구원 다이오드를 내장한 mos 구조의 사이리스터 소자

Also Published As

Publication number Publication date
US20080116520A1 (en) 2008-05-22
WO2004107449A1 (en) 2004-12-09
GB0312514D0 (en) 2003-07-09
CN100442537C (zh) 2008-12-10
JP2006526287A (ja) 2006-11-16
EP1634337A1 (en) 2006-03-15
CN1799144A (zh) 2006-07-05

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PA0105 International application

Patent event date: 20051129

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
N231 Notification of change of applicant
PN2301 Change of applicant

Patent event date: 20070907

Comment text: Notification of Change of Applicant

Patent event code: PN23011R01D

PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid