JP2006526287A5 - - Google Patents
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- Publication number
- JP2006526287A5 JP2006526287A5 JP2006508423A JP2006508423A JP2006526287A5 JP 2006526287 A5 JP2006526287 A5 JP 2006526287A5 JP 2006508423 A JP2006508423 A JP 2006508423A JP 2006508423 A JP2006508423 A JP 2006508423A JP 2006526287 A5 JP2006526287 A5 JP 2006526287A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB0312514.3A GB0312514D0 (en) | 2003-05-31 | 2003-05-31 | Termination structures for semiconductor devices and the manufacture thereof |
| PCT/IB2004/001791 WO2004107449A1 (en) | 2003-05-31 | 2004-05-21 | Termination structures for semiconductor devices and the manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006526287A JP2006526287A (ja) | 2006-11-16 |
| JP2006526287A5 true JP2006526287A5 (https=) | 2007-07-05 |
Family
ID=9959102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006508423A Withdrawn JP2006526287A (ja) | 2003-05-31 | 2004-05-21 | 半導体装置のための終端構造及びこの構造の製造方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080116520A1 (https=) |
| EP (1) | EP1634337A1 (https=) |
| JP (1) | JP2006526287A (https=) |
| KR (1) | KR20060036393A (https=) |
| CN (1) | CN100442537C (https=) |
| GB (1) | GB0312514D0 (https=) |
| WO (1) | WO2004107449A1 (https=) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4913336B2 (ja) * | 2004-09-28 | 2012-04-11 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US8110868B2 (en) | 2005-07-27 | 2012-02-07 | Infineon Technologies Austria Ag | Power semiconductor component with a low on-state resistance |
| US8461648B2 (en) | 2005-07-27 | 2013-06-11 | Infineon Technologies Austria Ag | Semiconductor component with a drift region and a drift control region |
| EP1908119B1 (de) * | 2005-07-27 | 2012-04-18 | Infineon Technologies Austria AG | Halbleiterbauelement mit einer driftzone und einer driftsteuerzone |
| DE102005061210B4 (de) * | 2005-12-21 | 2009-05-14 | Infineon Technologies Austria Ag | Halbleiterbauelement mit einem vorderseitigen und einem rückseitigen pn-Übergang sowie zugehöriges Herstellungsverfahren |
| US7564096B2 (en) | 2007-02-09 | 2009-07-21 | Fairchild Semiconductor Corporation | Scalable power field effect transistor with improved heavy body structure and method of manufacture |
| JP2012064849A (ja) * | 2010-09-17 | 2012-03-29 | Toshiba Corp | 半導体装置 |
| CN102569388B (zh) * | 2010-12-23 | 2014-09-10 | 无锡华润上华半导体有限公司 | 半导体器件及其制造方法 |
| US8598655B1 (en) * | 2012-08-03 | 2013-12-03 | Infineon Technologies Dresden Gmbh | Semiconductor device and method for manufacturing a semiconductor device |
| CN106024866B (zh) * | 2016-07-25 | 2019-03-29 | 电子科技大学 | 一种功率半导体器件的沟槽型终端结构 |
| KR102281493B1 (ko) * | 2017-02-03 | 2021-07-23 | 매그나칩 반도체 유한회사 | 전력 반도체 소자 및 그 제조 방법 |
| KR102463902B1 (ko) * | 2017-12-08 | 2022-11-08 | 한국전자통신연구원 | 다이오드를 내장한 mos 구조의 사이리스터 소자 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2689703B2 (ja) | 1989-08-03 | 1997-12-10 | 富士電機株式会社 | Ｍｏｓ型半導体装置 |
| US5557127A (en) * | 1995-03-23 | 1996-09-17 | International Rectifier Corporation | Termination structure for mosgated device with reduced mask count and process for its manufacture |
| JP3191747B2 (ja) * | 1997-11-13 | 2001-07-23 | 富士電機株式会社 | Ｍｏｓ型半導体素子 |
| DE59902506D1 (de) * | 1999-01-11 | 2002-10-02 | Fraunhofer Ges Forschung | Mos-leistungsbauelement und verfahren zum herstellen desselben |
| US6204097B1 (en) * | 1999-03-01 | 2001-03-20 | Semiconductor Components Industries, Llc | Semiconductor device and method of manufacture |
| JP4054155B2 (ja) * | 2000-02-01 | 2008-02-27 | 三菱電機株式会社 | 半導体装置 |
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2003
- 2003-05-31 GB GBGB0312514.3A patent/GB0312514D0/en not_active Ceased
-
2004
- 2004-05-21 JP JP2006508423A patent/JP2006526287A/ja not_active Withdrawn
- 2004-05-21 WO PCT/IB2004/001791 patent/WO2004107449A1/en not_active Ceased
- 2004-05-21 EP EP04734323A patent/EP1634337A1/en not_active Withdrawn
- 2004-05-21 US US10/561,308 patent/US20080116520A1/en not_active Abandoned
- 2004-05-21 CN CNB2004800148427A patent/CN100442537C/zh not_active Expired - Fee Related
- 2004-05-21 KR KR1020057022794A patent/KR20060036393A/ko not_active Withdrawn