JP2006521019A - 超低k(ULK)SiCOH膜および方法 - Google Patents
超低k(ULK)SiCOH膜および方法 Download PDFInfo
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- JP2006521019A JP2006521019A JP2006507287A JP2006507287A JP2006521019A JP 2006521019 A JP2006521019 A JP 2006521019A JP 2006507287 A JP2006507287 A JP 2006507287A JP 2006507287 A JP2006507287 A JP 2006507287A JP 2006521019 A JP2006521019 A JP 2006521019A
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- precursor gas
- film
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- 238000000034 method Methods 0.000 title claims abstract description 134
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 55
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 43
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 37
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 36
- 125000004430 oxygen atom Chemical group O* 0.000 claims abstract description 33
- 125000004429 atom Chemical group 0.000 claims abstract description 16
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 16
- 239000011148 porous material Substances 0.000 claims abstract description 14
- 239000002105 nanoparticle Substances 0.000 claims abstract 4
- 239000002243 precursor Substances 0.000 claims description 125
- 239000007789 gas Substances 0.000 claims description 118
- 239000000758 substrate Substances 0.000 claims description 59
- 238000000151 deposition Methods 0.000 claims description 38
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 32
- 239000000203 mixture Substances 0.000 claims description 32
- 230000005855 radiation Effects 0.000 claims description 26
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 24
- -1 cyclic siloxane Chemical class 0.000 claims description 22
- 238000005498 polishing Methods 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 16
- 238000009792 diffusion process Methods 0.000 claims description 16
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 claims description 13
- 238000001723 curing Methods 0.000 claims description 13
- 230000001588 bifunctional effect Effects 0.000 claims description 12
- GJEZBVHHZQAEDB-UHFFFAOYSA-N 6-oxabicyclo[3.1.0]hexane Chemical compound C1CCC2OC21 GJEZBVHHZQAEDB-UHFFFAOYSA-N 0.000 claims description 10
- 238000010438 heat treatment Methods 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 claims description 8
- 229910018557 Si O Inorganic materials 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 7
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 7
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 6
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 5
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 claims description 5
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 claims description 5
- 150000002430 hydrocarbons Chemical group 0.000 claims description 5
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 claims description 5
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 claims description 5
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 5
- 229920002554 vinyl polymer Polymers 0.000 claims description 5
- VLQZJOLYNOGECD-UHFFFAOYSA-N 2,4,6-trimethyl-1,3,5,2,4,6-trioxatrisilinane Chemical compound C[SiH]1O[SiH](C)O[SiH](C)O1 VLQZJOLYNOGECD-UHFFFAOYSA-N 0.000 claims description 4
- XMSXQFUHVRWGNA-UHFFFAOYSA-N Decamethylcyclopentasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 XMSXQFUHVRWGNA-UHFFFAOYSA-N 0.000 claims description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 4
- NCZAACDHEJVCBX-UHFFFAOYSA-N [Si]=O.[C] Chemical class [Si]=O.[C] NCZAACDHEJVCBX-UHFFFAOYSA-N 0.000 claims description 4
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- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052732 germanium Inorganic materials 0.000 claims description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 4
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 claims description 4
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 claims description 4
- UMFJXASDGBJDEB-UHFFFAOYSA-N triethoxy(prop-2-enyl)silane Chemical compound CCO[Si](CC=C)(OCC)OCC UMFJXASDGBJDEB-UHFFFAOYSA-N 0.000 claims description 4
- LFRDHGNFBLIJIY-UHFFFAOYSA-N trimethoxy(prop-2-enyl)silane Chemical compound CO[Si](OC)(OC)CC=C LFRDHGNFBLIJIY-UHFFFAOYSA-N 0.000 claims description 4
- 229930195735 unsaturated hydrocarbon Natural products 0.000 claims description 4
- PRBHEGAFLDMLAL-UHFFFAOYSA-N 1,5-Hexadiene Natural products CC=CCC=C PRBHEGAFLDMLAL-UHFFFAOYSA-N 0.000 claims description 3
- 125000002619 bicyclic group Chemical group 0.000 claims description 3
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 claims description 3
- PYGSKMBEVAICCR-UHFFFAOYSA-N hexa-1,5-diene Chemical compound C=CCCC=C PYGSKMBEVAICCR-UHFFFAOYSA-N 0.000 claims description 3
- 125000002950 monocyclic group Chemical group 0.000 claims description 3
- QYZLKGVUSQXAMU-UHFFFAOYSA-N penta-1,4-diene Chemical compound C=CCC=C QYZLKGVUSQXAMU-UHFFFAOYSA-N 0.000 claims description 3
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- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims 1
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- 238000004519 manufacturing process Methods 0.000 abstract description 13
- 230000006872 improvement Effects 0.000 abstract description 2
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- 239000002184 metal Substances 0.000 description 14
- 239000012159 carrier gas Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052734 helium Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000003870 refractory metal Substances 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- POFFJVRXOKDESI-UHFFFAOYSA-N 1,3,5,7-tetraoxa-4-silaspiro[3.3]heptane-2,6-dione Chemical compound O1C(=O)O[Si]21OC(=O)O2 POFFJVRXOKDESI-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical compound C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
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- 230000010354 integration Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- BKIMMITUMNQMOS-UHFFFAOYSA-N nonane Chemical compound CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 4
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
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- 125000004122 cyclic group Chemical group 0.000 description 3
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- MELPJGOMEMRMPL-UHFFFAOYSA-N 9-oxabicyclo[6.1.0]nonane Chemical compound C1CCCCCC2OC21 MELPJGOMEMRMPL-UHFFFAOYSA-N 0.000 description 2
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/02—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by baking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23B—TURNING; BORING
- B23B5/00—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor
- B23B5/18—Turning-machines or devices specially adapted for particular work; Accessories specially adapted therefor for turning crankshafts, eccentrics, or cams, e.g. crankpin lathes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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Abstract
【解決手段】 本発明は、弾性係数および硬度が改善した多相超低k膜、ならびにこれを形成するための様々な方法を提供する。多相超低k誘電膜は、Si、C、O、およびHの原子を含み、誘電率が約2.4以下であり、ナノサイズの孔または空隙を有し、弾性係数が約5以上であり、硬度が約0.7以上である。好適な多相超低k誘電膜は、Si、C、O、およびHの原子を含み、誘電率が約2.2以下であり、ナノサイズの孔または空隙を有し、弾性係数が約3以上であり、硬度が約0.3以上である。
Description
Claims (100)
- 多相超低誘電率膜を形成する方法であって、
プラズマ・エンハンス化学気相付着(PECVD)リアクタにおいて基板を位置付けるステップと、
Si、C、O、およびHの原子を含む第1の前駆物質ガスを前記リアクタ内に流すステップと、
主にCおよびHの原子を含む有機分子を含む第2の前駆物質ガスを前記リアクタ内に流すステップと、
少なくとも3つのSi−O結合を含むシロキサン分子を含む第3の前駆物質ガスを前記リアクタ内に流すステップと、
前記基板上に多相超低k膜を堆積するステップと、
を含む、方法。 - 前記第1の前記物質ガスが、Si、C、O、およびHの原子を含む単一の分子から成る、請求項1に記載の方法。
- 前記第1の前駆物質ガスが、Si、C、O、およびHの原子を含む分子の混合物から成る、請求項1に記載の方法。
- 前記ガス混合物にHeを追加するステップを更に含む、請求項1に記載の方法。
- 前記ガス混合物にCO2またはCO2およびO2の混合物を追加するステップを更に含む、請求項1に記載の方法。
- 前記第1の前駆物質ガスが、Si、C、O、およびH原子を含むシロキサンである、請求項1に記載の方法。
- 前記シロキサンが環状シロキサンである、請求項6に記載の方法。
- 前記環状シロキサンが、テトラメチルシクロテトラシロキサン、デカメチルシクロペンタシロキサン、オクタメチルシクロテトラシロキサン、トリメチルシクロトリシロキサン、およびヘクサメチルシクロトリシロキサンから成る群から選択される、請求項7に記載の方法。
- 前記第1の前駆物質ガスが、テトラメチルシクロテトラシロキサンまたはオクタメチルシクロテトラシロキサンである、請求項1に記載の方法。
- 前記第1の前駆物質ガスが、窒素、フッ素、またはゲルマニウムの元素を更に含む、請求項1に記載の方法。
- 前記第2の前駆物質ガスが、著しい環ひずみを与える縮合環の種を含み、前記縮合環が、4、5、7またはもっと多くの原子の環を含む、請求項1に記載の方法。
- 前記第2の前駆物質ガスが酸化シクロペンタンを含む、請求項1に記載の方法。
- 前記第3の前駆物質ガスが3または4のSi−O結合を含むシロキサン分子を含む、請求項1に記載の方法。
- 前記第3の前駆物質ガスが、テトラメチルオルトシリケート(TMOS)、テトラエチルオルトシリケート(TEOS)、ビニルトリエトキシシラン、アリルトリメトキシシラン、ビニルトリメトキシシラン、アリルトリエトキシシラン、フェニルトリエトキシシラン、およびフェニルトリメトキシシランから成る群から選択される、請求項1に記載の方法。
- 堆積の後、前記多相超低k膜を加熱処理するステップを更に含む、請求項1に記載の方法。
- 前記加熱処理が、少なくとも0.25時間の時間間隔、300℃以上の温度で行うアニーリング・ステップである、請求項15に記載の方法。
- 前記加熱処理を2つのステップで行い、第1のステップにおいて、前記膜を第1の時間期間、約300℃以下の温度で加熱し、第2のステップにおいて、前記膜を第2の時間期間、約300℃以上の温度で加熱し、前記第2の時間期間が前記第1の時間期間よりも長い、請求項15に記載の方法。
- 前記多相超低k膜をeビーム硬化させるステップを更に含み、前記eビーム硬化を、約1分から約300分までの時間期間、約350℃から約450℃までの温度で行う、請求項1に記載の方法。
- 前記PECVDリアクタが平行板リアクタである、請求項1に記載の方法。
- 前記平行板リアクタは、基板チャック面積が約300cm2および約800cm2の間であり、前記基板と上部電極との間の間隔が約1cmおよび約10cmの間である、請求項19に記載の方法。
- 前記平行板リアクタの電極にRF電力を印加するステップを更に含む、請求項19に記載の方法。
- 前記堆積ステップが、前記基板の温度を約25℃および約400℃の間に設定するステップと、RF電力密度を0.05から4.0W/cm2までに設定するステップとを更に含む、請求項1に記載の方法。
- 前記堆積ステップが、前記第1の前駆物質ガスの流量を約5sccmおよび約1000sccmの間に設定するステップを更に含む、請求項1に記載の方法。
- 前記堆積ステップが、前記第2の前駆物質ガスの流量を約5および約50,000sccmの間に設定するステップを更に含む、請求項1に記載の方法。
- 前記堆積ステップが、前記第3の前駆物質ガスの流量を約5sccmおよび約1000sccmの間に設定するステップを更に含む、請求項1に記載の方法。
- 前記堆積ステップが、前記PECVDリアクタの圧力を約50mTorrおよび約5000mTorrの間に設定するステップを更に含む、請求項1に記載の方法。
- 前記第1の前駆物質ガスがテトラメチルシクロテトラシロキサンであり、前記第2の前駆物質ガスが酸化シクロペンタンである、請求項1に記載の方法。
- 多相超低誘電率膜を形成する方法であって、
プラズマ・エンハンス化学気相付着(PECVD)リアクタにおいて基板を位置付けるステップと、
Si、C、O、およびHの原子を含む第1の前駆物質ガスを前記リアクタ内に流すステップと、
CおよびHの原子を含む有機分子を主に含む第2の前駆物質ガスを前記リアクタ内に流すステップと、
eビーム放射に対して敏感な反応基を含む分子を含む第3の前駆物質ガスを前記リアクタ内に流すステップと、
前記基板上に多相超低k膜を堆積するステップと、
前記堆積した膜をeビーム放射によって硬化させるステップと、
を含む、方法。 - 前記第1の前記物質ガスが、Si、C、O、およびHの原子を含む単一の分子から成る、請求項28に記載の方法。
- 前記第1の前駆物質ガスが、Si、C、O、およびHの原子を含む分子の混合物から成る、請求項28に記載の方法。
- 前記第1の前駆物質ガスにHeを混合するステップを更に含む、請求項28に記載の方法。
- 前記第1の前駆物質ガスにCO2またはCO2およびO2の混合物を混合するステップを更に含む、請求項28に記載の方法。
- 前記第1の前駆物質ガスが、Si、C、O、およびH原子を含むシロキサンである、請求項28に記載の方法。
- 前記シロキサンが環状シロキサンである、請求項33に記載の方法。
- 前記環状シロキサンが、テトラメチルシクロテトラシロキサン、デカメチルシクロペンタシロキサン、オクタメチルシクロテトラシロキサン、トリメチルシクロトリシロキサン、およびヘクサメチルシクロトリシロキサンから成る群から選択される、請求項34に記載の方法。
- 前記第1の前駆物質ガスが、テトラメチルシクロテトラシロキサンまたはオクタメチルシクロテトラシロキサンである、請求項28に記載の方法。
- 前記第1の前駆物質ガスが、窒素、フッ素、またはゲルマニウムの元素を更に含む、請求項28に記載の方法。
- 前記第2の前駆物質ガスが、著しい環ひずみを与える縮合環の種を含み、前記縮合環が、4、5、7またはもっと多くの原子の環を含む、請求項28に記載の方法。
- 前記第2の前駆物質ガスが酸化シクロペンタンを含む、請求項28に記載の方法。
- 前記第3の前駆物質ガスがシロキサン分子であり、前記第3の前駆物質の前記反応基が、ビニル、アリル、フェニル、アセチレン、およびその混合物から成る群から選択される、請求項28に記載の方法。
- 前記第3の前駆物質ガスが、ビニルトリメトキシシラン、アリルトリエトキシシラン、フェニルトリエトキシシラン、フェニルトリメトキシシラン、および2不飽和基を含むシロキサンから成る群から選択される、請求項28に記載の方法。
- 前記第3の前駆物質ガスが、ビニル、アリル、フェニル、またはアセチレン基、およびその混合物を含むシランおよびシロキサンから成る群から選択される、請求項28に記載の方法。
- 前記第3の前駆物質ガスが、不飽和炭化水素基を含むシランおよびシロキサンから成る群から選択される、請求項28に記載の方法。
- 前記第3の前駆物質ガスが、2つ以上の不飽和C−C二重または三重を含む二官能有機分子から成る群から選択される、請求項28に記載の方法。
- 前記第3の前駆物質ガスが、1,3−ブタジエン、1,4−ペンタジエン、1,5−ヘキサジエン、単環式二官能分子、および二環式二官能分子から成る群から選択される、請求項28に記載の方法。
- 堆積の後、前記多相超低k膜を加熱処理するステップを更に含む、請求項28に記載の方法。
- 前記加熱処理が、少なくとも0.25時間の時間間隔、300℃以上の温度で行うアニーリング・ステップである、請求項46に記載の方法。
- 前記加熱処理を2つのステップで行い、第1のステップにおいて、前記膜を第1の時間期間、約300℃以下の温度で加熱し、第2のステップにおいて、前記膜を第2の時間期間、約300℃以上の温度で加熱し、前記第2の時間期間が前記第1の時間期間よりも長い、請求項46に記載の方法。
- 前記第2の時間期間が前記第1の時間期間の少なくとも10倍長い、請求項48に記載の方法。
- 約1分から約300分までの時間期間、約350℃から約450℃までの温度で硬化を行う、請求項28に記載の方法。
- 前記PECVDリアクタが平行板リアクタである、請求項30に記載の方法。
- 前記平行板リアクタは、基板チャック面積が約300cm2および約800cm2の間であり、前記基板と上部電極との間の間隔が約1cmおよび約10cmの間である、請求項51に記載の方法。
- 前記平行板リアクタの電極にRF電力を印加するステップを更に含む、請求項51に記載の方法。
- 前記堆積ステップが、前記基板の温度を約25℃および約400℃の間に設定するステップと、RF電力密度を0.05から4.0W/cm2までに設定するステップとを更に含む、請求項28に記載の方法。
- 前記堆積ステップが、前記第1の前駆物質ガスの流量を約5sccmおよび約1000sccmの間に設定するステップを更に含む、請求項28に記載の方法。
- 前記堆積ステップが、前記第2の前駆物質ガスの流量を約5および約50,000sccmの間に設定するステップを更に含む、請求項28に記載の方法。
- 前記堆積ステップが、前記第3の前駆物質ガスの流量を約5sccmおよび約1,000sccmの間に設定するステップを更に含む、請求項28に記載の方法。
- 前記堆積ステップが、前記PECVDリアクタの圧力を約50mTorrおよび約5000mTorrの間に設定するステップを更に含む、請求項28に記載の方法。
- 前記第1の前駆物質ガスがテトラメチルシクロテトラシロキサンであり、前記第2の前駆物質ガスが酸化シクロペンタンである、請求項28に記載の方法。
- 多相超低誘電膜を形成する方法であって、
プラズマ・エンハンス化学気相付着(PECVD)リアクタにおいて基板を位置付けるステップと、
Si、C、O、およびHの原子を含む第1の前駆物質ガスを前記リアクタ内に流すステップと、
eビーム放射に対して敏感な反応基を含む分子を含む第2の前駆物質ガスを前記リアクタ内に流すステップと、
前記基板上に多相超低k膜を堆積するステップと、
前記堆積した膜をeビーム放射によって硬化させるステップと、
を含む、方法。 - 前記第1の前記物質ガスが、Si、C、O、およびHの原子を含む単一の分子から成る、請求項60に記載の方法。
- 前記第1の前駆物質ガスが、Si、C、O、およびHの原子を含む分子の混合物から成る、請求項60に記載の方法。
- 前記第1の前駆物質ガスにHeを混合するステップを更に含む、請求項60に記載の方法。
- 前記第1の前駆物質ガスにCO2またはCO2およびO2の混合物を混合するステップを更に含む、請求項60に記載の方法。
- 前記第1の前駆物質ガスが、Si、C、O、およびH原子を含むシロキサンである、請求項60に記載の方法。
- 前記シロキサンが環状シロキサンである、請求項65に記載の方法。
- 前記環状シロキサンが、テトラメチルシクロテトラシロキサン、デカメチルシクロペンタシロキサン、オクタメチルシクロテトラシロキサン、トリメチルシクロトリシロキサン、およびヘクサメチルシクロトリシロキサンから成る群から選択される、請求項64に記載の方法。
- 前記第1の前駆物質ガスが、テトラメチルシクロテトラシロキサンまたはオクタメチルシクロテトラシロキサンである、請求項60に記載の方法。
- 前記第1の前駆物質ガスが、窒素、フッ素、またはゲルマニウムの元素を更に含む、請求項60に記載の方法。
- 前記第2の前駆物質ガスの前記反応基が、ビニル、アリル、フェニル、またはアセチレン基、およびその混合物を含むシランおよびシロキサンから成る群から選択される、請求項60に記載の方法。
- 前記第2の前駆物質ガスが、ビニルトリエトキシシラン、アリルトリメトキシシラン、ビニルトリメトトキシラン、アリルトリエトトキシラン、フェニルトリエトキシシラン、フェニルトリメトキシシラン、および2不飽和基を含むシロキサンから成る群から選択されたシロキサンである、請求項60に記載の方法。
- 前記第3の前駆物質ガスが、2つ以上の不飽和C−C二重または三重を含む二官能有機分子から成る群から選択される、請求項60に記載の方法。
- 前記第3の前駆物質ガスが、1,3−ブタジエン、1,4−ペンタジエン、1,5−ヘキサジエン、単環式二官能分子、および二環式二官能分子から成る群から選択される、請求項60に記載の方法。
- 堆積の後、前記多相超低k膜を加熱処理するステップを更に含む、請求項60に記載の方法。
- 前記加熱処理が、少なくとも0.25時間の時間間隔、300℃以上の温度で行うアニーリング・ステップである、請求項74に記載の方法。
- 前記加熱処理を2つのステップで行い、第1のステップにおいて、前記膜を第1の時間期間、約300℃以下の温度で加熱し、第2のステップにおいて、前記膜を第2の時間期間、約300℃以上の温度で加熱し、前記第2の時間期間が前記第1の時間期間よりも長い、請求項74に記載の方法。
- 前記第2の時間期間が前記第1の時間期間の少なくとも10倍長い、請求項76に記載の方法。
- 約1分から約300分までの時間期間、約350℃から約450℃までの温度で硬化を行う、請求項60に記載の方法。
- 前記PECVDリアクタが平行板リアクタである、請求項60に記載の方法。
- 前記平行板リアクタは、基板チャック面積が約300cm2および約800cm2の間であり、前記基板と上部電極との間の間隔が約1cmおよび約10cmの間である、請求項79に記載の方法。
- 前記平行板リアクタの電極にRF電力を印加するステップを更に含む、請求項79に記載の方法。
- 前記堆積ステップが、前記基板の温度を約25℃および約400℃の間に設定するステップと、RF電力密度を0.05から4.0W/cm2までに設定するステップとを更に含む、請求項60に記載の方法。
- 前記堆積ステップが、前記第1の前駆物質ガスの流量を約5sccmおよび約1000sccmの間に設定するステップを更に含む、請求項60に記載の方法。
- 前記堆積ステップが、前記第2の前駆物質ガスの流量を約5および約100sccmの間に設定するステップを更に含む、請求項60に記載の方法。
- 前記堆積ステップが、前記PECVDリアクタの圧力を約50mTorrおよび約5000mTorrの間に設定するステップを更に含む、請求項60に記載の方法。
- 前記堆積した膜をeビーム放射によって硬化させるステップが真空環境において行われる、請求項60に記載の方法。
- 前記堆積した膜をeビーム放射によって硬化させるステップが、約1KeVおよび約100KeVの間の電子エネルギを用いて行われる、請求項60に記載の方法。
- 前記堆積した膜をeビーム放射によって硬化させるステップが、約2KeVおよび約30KeVの間の電子エネルギを用いて行われる、請求項60に記載の方法。
- 前記堆積した膜をeビーム放射によって硬化させるステップが、約50および約5000マイクロキュリー/cm2の間の電子放射用量を用いて行われる、請求項60に記載の方法。
- 前記堆積した膜をeビーム放射によって硬化させるステップが、約100および約2000マイクロキュリー/cm2の間の電子放射用量を用いて行われる、請求項60に記載の方法。
- Si、C、O、およびHの原子を含む多相超低k誘電膜であって、前記膜は、誘電率が約2.4以下であり、ナノサイズの孔または空隙を有し、弾性係数が約5以上であり、硬度が約0.7以上である、多相超低k誘電膜。
- 誘電率が約2.2以下であり、ナノサイズの孔または空隙を有し、弾性係数が約3以上であり、前記硬度が約0.3以上である、請求項91に記載の多相超低k膜。
- 前記孔または空隙が約0.5から約20ナノメートルの孔の直径を有する、請求項91に記載の多相超低k膜。
- 前記膜が、共有結合ネットワークにおけるSi、C、O、およびHから成る水素化酸化シリコン炭素材料(SiCOH)の第1の相を有し、少なくとも別の相が主にCおよびH原子から成る、請求項91に記載の多相超低k膜。
- eビーム放射条件を調節することによって前記膜の上面に高密度領域が形成されている、請求項91に記載の多相超低k膜。
- 請求項91に記載の多相超低k膜を少なくとも含む電子構造。
- 請求項91に記載の多相超低k膜を少なくとも含み、前記膜の上面における高密度領域を更に含む、電子構造。
- 前記多相超低k膜が後工程(BEOL)配線構造のレベル間またはレベル内誘電体である、請求項96に記載の電子構造。
- 前記多相超低k膜がBEOL配線構造のキャップまたは拡散バリアである、請求項96に記載の電子構造。
- 前記多相超低k膜がBEOL配線構造のハード・マスクまたは研磨ストップ層である、請求項96に記載の電子構造。
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EP1617957B1 (en) | 2010-09-01 |
US20050276930A1 (en) | 2005-12-15 |
EP1617957A4 (en) | 2007-03-28 |
US20080026203A1 (en) | 2008-01-31 |
EP1617957A2 (en) | 2006-01-25 |
US7288292B2 (en) | 2007-10-30 |
JP2011082540A (ja) | 2011-04-21 |
JP2012109589A (ja) | 2012-06-07 |
DE602004028922D1 (de) | 2010-10-14 |
TW200428493A (en) | 2004-12-16 |
JP5511781B2 (ja) | 2014-06-04 |
CN1787881B (zh) | 2012-12-26 |
TWI281707B (en) | 2007-05-21 |
WO2004083495A2 (en) | 2004-09-30 |
CN1787881A (zh) | 2006-06-14 |
KR20050110649A (ko) | 2005-11-23 |
WO2004083495A3 (en) | 2005-02-03 |
US20090297823A1 (en) | 2009-12-03 |
ATE479729T1 (de) | 2010-09-15 |
KR100724508B1 (ko) | 2007-06-07 |
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