JP2006513572A5 - - Google Patents

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Publication number
JP2006513572A5
JP2006513572A5 JP2004566580A JP2004566580A JP2006513572A5 JP 2006513572 A5 JP2006513572 A5 JP 2006513572A5 JP 2004566580 A JP2004566580 A JP 2004566580A JP 2004566580 A JP2004566580 A JP 2004566580A JP 2006513572 A5 JP2006513572 A5 JP 2006513572A5
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JP
Japan
Prior art keywords
layer structure
epitaxial layer
iii
emosfet
semiconductor substrate
Prior art date
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Pending
Application number
JP2004566580A
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English (en)
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JP2006513572A (ja
Filing date
Publication date
Priority claimed from US10/339,379 external-priority patent/US6963090B2/en
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Publication of JP2006513572A publication Critical patent/JP2006513572A/ja
Publication of JP2006513572A5 publication Critical patent/JP2006513572A5/ja
Pending legal-status Critical Current

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Claims (3)

  1. 注入フリーエンハンスメントモード金属酸化膜半導体電界効果トランジスタ（ＥＭＯＳＦＥＴ）であって、
    ＩＩＩ−Ｖ化合物半導体基板と、
    前記ＩＩＩ−Ｖ化合物半導体基板上のエピタキシャル層構造であって、チャネル層及び少なくとも１つのドープ層を含む前記エピタキシャル層構造と、
    前記エピタキシャル層構造上のゲート酸化膜層と、
    前記ゲート酸化膜層上の金属ゲート電極と、
    前記エピタキシャル層構造上のソース及びドレイン・オーミックコンタクトと、からなり、
    少なくとも１層のドープ層として、同じドーパント・タイプのイオン注入をしたソースとドレイン領域を有しない、ＥＭＯＳＦＥＴ。
  2. 注入フリーエンハンスメントモード金属酸化膜半導体電界効果トランジスタ（ＥＭＯＳＦＥＴ）を組み立てるための方法であって、
    ＩＩＩ−Ｖ化合物半導体基板を提供する段階と、
    前記ＩＩＩ−Ｖ化合物基板上に第１厚さのエピタキシャル層構造を成長する段階と、
    前記第１厚さの前記エピタキシャル層構造にドープして、前記第１厚さの前記エピタキシャル層構造内にドープ層を形成する段階と、
    前記エピタキシャル層構造を第２厚さに成長する段階と、
    前記エピタキシャル層構造上にゲート酸化膜層を形成する段階と、
    前記エピタキシャル層構造上にソース及びドレイン・オーミックコンタクトを形成する段階と、
    前記ゲート酸化膜層上に金属ゲート電極を形成する段階と、からなり、
    ドープ層として同じドーパント・タイプのイオンを注入したソースとドレインの領域を形成せずに作製する、方法。
  3. エンハンスメントモード金属酸化膜半導体電界効果トランジスタ（ＥＭＯＳＦＥＴ）であって、
    ＩＩＩ−Ｖ化合物半導体基板と、
    前記ＩＩＩ−Ｖ化合物半導体基板上のエピタキシャル層構造であって、チャネル層及び少なくとも１つのデルタドープ層を含む前記エピタキシャル層構造と、
    前記エピタキシャル層構造上のゲート酸化膜層と、
    前記ゲート酸化膜層上の金属ゲート電極であって、仕事関数を有する前記金属ゲート電
    極と、
    前記エピタキシャル層構造上のソース及びドレイン・オーミックコンタクトであって、前記金属ゲート電極は、仕事関数を有するように選択され、前記デルタドープ層は、エンハンスメントモード動作が実現されるように選択される前記ソース及びドレイン・オーミックコンタクトと、
    が含まれるＥＭＯＳＦＥＴ。
JP2004566580A 2003-01-09 2003-12-18 エンハンスメントモード金属酸化膜半導体電界効果トランジスタ及びその形成方法 Pending JP2006513572A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/339,379 US6963090B2 (en) 2003-01-09 2003-01-09 Enhancement mode metal-oxide-semiconductor field effect transistor
PCT/US2003/040680 WO2004064172A2 (en) 2003-01-09 2003-12-18 An enhancement mode metal-oxide-semiconductor field effect transistor and method for forming the same

Publications (2)

Publication Number Publication Date
JP2006513572A JP2006513572A (ja) 2006-04-20
JP2006513572A5 true JP2006513572A5 (ja) 2007-02-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004566580A Pending JP2006513572A (ja) 2003-01-09 2003-12-18 エンハンスメントモード金属酸化膜半導体電界効果トランジスタ及びその形成方法

Country Status (6)

Country Link
US (1) US6963090B2 (ja)
EP (1) EP1586119A2 (ja)
JP (1) JP2006513572A (ja)
AU (1) AU2003301146A1 (ja)
TW (1) TWI333260B (ja)
WO (1) WO2004064172A2 (ja)

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