JP2006508523A - 自己整合型ナノチューブ電界効果トランジスタおよびこれを製造する方法 - Google Patents
自己整合型ナノチューブ電界効果トランジスタおよびこれを製造する方法 Download PDFInfo
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Abstract
【解決手段】 基板(102)上に堆積したカーボン・ナノチューブ(104)と、カーボン・ナノチューブ(104)の第1の端部および第2の端部にそれぞれ形成されたソースおよびドレイン(106〜107)と、誘電体膜(111)によってカーボン・ナノチューブから分離された、実質的にカーボン・ナノチューブ(104)の一部の上に形成されたゲート(112)とを備える。
Description
Claims (19)
- 自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイスであって、
基板上に堆積されたカーボン・ナノチューブと、
前記カーボン・ナノチューブの第1の端部に形成されたソースと、
前記カーボン・ナノチューブの第2の端部に形成されたドレインと、
前記カーボン・ナノチューブから誘電体膜によって分離され、前記カーボン・ナノチューブの一部の上に実質的に形成されたゲートと、
を備える、自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイス。 - 前記基板はシリコン基板上に堆積した熱酸化物を備える、請求項1に記載の自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイス。
- 前記熱酸化物は約150ナノメートルの厚さである、請求項2に記載の自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイス。
- 前記ゲートの一部は、酸化物層によって前記カーボン・ナノチューブから更に分離されている、請求項1に記載の自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイス。
- 前記ゲートは、窒化物スペーサによって前記ソースおよび前記ドレインから分離されている、請求項1に記載の自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイス。
- 前記デバイス上にパッシベーション誘電体層を更に備える、請求項1に記載の自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイス。
- 前記ソースおよび前記ドレインを位置合わせする前記基板内のアライメント・マークを更に備える、請求項1に記載の自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイス。
- 前記ゲートは前記誘電体膜および前記カーボン・ナノチューブを取り囲んで前記カーボン・ナノチューブの裏側に接触する、請求項1に記載の自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイス。
- カーボン・ナノチューブ電界効果トランジスタ半導体デバイスであって、
誘電体材料に取り囲まれた垂直カーボン・ナノチューブと、
前記カーボン・ナノチューブの第1の側に形成されたソースと、
前記カーボン・ナノチューブの第2の側に形成されたドレインと、
二層窒化物複合体であって、これを介して前記ソースおよび前記ドレインの各々のバンド・ストラップを形成し、前記誘電体材料に取り囲まれた前記カーボン・ナノチューブを前記ソースおよび前記ドレインに接続する、二層窒化物複合体と、
前記カーボン・ナノチューブの一部の上に実質的に形成されたゲートと、
を備える、カーボン・ナノチューブ電界効果トランジスタ半導体デバイス。 - 前記カーボン・ナノチューブの基部に金属触媒を更に備える、請求項9に記載のカーボン・ナノチューブ電界効果トランジスタ半導体デバイス。
- 自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイスを形成するための方法であって、
熱酸化物基板上にナノチューブを堆積するステップであって、前記基板はアライメント・マークを含む、ステップと、
前記ナノチューブの各端部に金属コンタクトを形成するステップであって、第1の金属コンタクトがソースであり第2の金属コンタクトがドレインである、ステップと、
前記デバイスの上にアモルファス・シリコン層を堆積するステップと、
各金属コンタクトの対向側に窒化物スペーサを形成するステップと、
前記デバイス上に高k誘電体膜を堆積するステップと、
前記アモルファス・シリコンを酸化するステップと、
実質的に前記ソースおよび前記ドレインの間でかつ前記ナノチューブの上にゲートを形成するステップと、
を備える、方法。 - 前記デバイスの上にパッシベーション誘電体を堆積するステップを更に備える、請求項11に記載の方法。
- 前記ナノチューブは単一壁ナノチューブである、請求項11に記載の方法。
- 前記金属コンタクトはフォトレジストを用いて形成する、請求項11に記載の方法。
- 自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイスを形成するための方法であって、
熱酸化物基板上にナノチューブを堆積するステップであって、前記基板はアライメント・マークを含む、ステップと、
前記ナノチューブの各端部に反応性イオン・エッチングにより金属コンタクトを形成するステップであって、第1の金属コンタクトがソースであり第2の金属コンタクトがドレインである、ステップと、
各金属コンタクトの対向側に窒化物スペーサを形成するステップと、
前記デバイス上に高k誘電体膜を堆積するステップと、
実質的に前記ソースおよび前記ドレインの間でかつ前記ナノチューブの上にゲートを形成するステップと、
を備える、方法。 - 前記デバイスの上にパッシベーション誘電体を堆積するステップを更に備える、請求項15に記載の方法。
- 自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイスを形成するための方法であって、
熱酸化物基板上にナノチューブを堆積するステップであって、前記基板はアライメント・マークを含む、ステップと、
前記ナノチューブの各端部上にアモルファス・シリコンの柱を形成するステップと、
前記アモルファス・シリコンの柱を酸化物の層によって分離するステップと、
アモルファス・シリコンの柱の間にゲート誘電体層を形成するステップと、
実質的に前記アモルファス・シリコンの柱の間でかつ前記ナノチューブの上にゲートを形成するステップと、
前記ゲートの上に窒化物層を形成するステップと、
前記ゲートの各側に酸化物スペーサを形成するステップと、
前記アモルファス・シリコンを金属コンタクトで置換するステップであって、第1の金属コンタクトがソースであり第2の金属コンタクトがドレインである、ステップと、
前記デバイスの上にパッシベーション誘電体を堆積するステップと、
を備える、方法。 - 自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイスを形成するための方法であって、
熱酸化物基板上に金属触媒を堆積するステップと、
前記デバイス上に低温酸化物層を堆積するステップと、
前記酸化物、前記金属触媒を貫通して、前記金属触媒の下にある熱酸化物内にトレンチをエッチングするステップと、
前記低温酸化物層をエッチングして酸化物アイランドを形成するステップと、
露出した金属触媒を剥離するステップと、
前記酸化物アイランドの下の金属触媒間にナノチューブを成長させるステップと、
前記ナノチューブをゲート誘電体で取り囲むステップと、
前記酸化物アイランドの対向面に窒化物スペーサを形成するステップと、
化学的気相堆積法によって実質的に前記酸化物アイランドの間でかつ前記ナノチューブの上にゲートを形成するステップと、
前記デバイス上にパッシベーション誘電体を堆積するステップと、
を備える、方法。 - 自己整合型カーボン・ナノチューブ電界効果トランジスタ半導体デバイスを形成するための方法であって、
金属触媒から垂直にナノチューブを成長させて前記半導体デバイスの表面上に形成するステップと、
窒化物ブロック構造を形成するステップと、
前記ナノチューブをゲート誘電体で取り囲むステップと、
前記ゲート誘電体によって前記金属触媒から分離して、ゲート金属を堆積するステップと、
窒化物層を堆積するステップと、
前記窒化物層でキャップされたゲート金属の柱を形成するステップと、
前記柱の周りに窒化物スペーサを形成するステップと、
前記誘電体層によって前記ゲート金属から分離して、実質的に前記柱の間にドレイン金属を堆積するステップと、
前記デバイス上にパッシベーション誘電体を堆積するステップと、
を備える、方法。
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JP2020031221A (ja) * | 2009-12-04 | 2020-02-27 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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JP7118973B2 (ja) | 2017-08-04 | 2022-08-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US11626037B2 (en) | 2017-08-04 | 2023-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and display device |
WO2022039148A1 (ja) * | 2020-08-17 | 2022-02-24 | 株式会社村田製作所 | 半導体センサ |
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