JP2007520072A - 垂直型ナノチューブ半導体デバイス構造体及びその形成方法 - Google Patents
垂直型ナノチューブ半導体デバイス構造体及びその形成方法 Download PDFInfo
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Abstract
【解決手段】 少なくとも1つのナノチューブを組み組む垂直型デバイス構造体、及び、化学気相成長法によってこうしたデバイス構造体を製造する方法である。各々のナノチューブは、触媒パッドによって触媒作用が及ぼされる化学気相成長法によって成長され、誘電体材料のコーティング内に包み込まれる。包み込まれたナノチューブがゲート電極の厚さを通って垂直方向に延びるように、該包み込まれたナノチューブの周りにゲート電極を形成することによって、垂直型電界効果トランジスタを作ることができる。包み込まれたナノチューブ、及び、該包み込められたナノチューブを支持する対応する触媒パッドが1つのキャパシタ・プレートを形成するように、キャパシタを作ることができる。
【選択図】 図1
Description
Claims (32)
- ほぼ水平方向面を定める基板と、
前記基板から垂直方向に突出するゲート電極と、
前記ゲート電極を通って対向する第1端部と第2端部との間に垂直方向に延びる、少なくとも1つの半導体ナノチューブと、
前記少なくとも1つの半導体ナノチューブを前記ゲート電極から電気的に絶縁するゲート誘電体と、
前記少なくとも1つの半導体ナノチューブの前記第1端部に電気的に結合されたソースと、
前記少なくとも1つの半導体ナノチューブの前記第2端部に電気的に結合されたドレインと
を備える、垂直型半導体デバイス構造体。 - 前記ソースが、前記少なくとも1つの半導体ナノチューブを成長させるのに有効な触媒材料から成る、請求項1に記載の半導体デバイス構造体。
- 前記ドレインが、前記少なくとも1つの半導体ナノチューブを成長させるのに有効な触媒材料から成る、請求項1に記載の半導体デバイス構造体。
- 前記ドレインを前記ゲート電極から電気的に絶縁するための、該ドレインと該ゲート電極との間に配置された絶縁層をさらに備える、請求項1に記載の半導体デバイス構造体。
- 前記ソースを前記ゲート電極から電気的に絶縁するための、該ソースと該ゲート電極との間に配置された絶縁層をさらに備える、請求項1に記載の半導体デバイス構造体。
- 前記少なくとも1つの半導体ナノチューブが、配列された炭素原子で構成されている、請求項1に記載の半導体デバイス構造体。
- 前記少なくとも1つの半導体ナノチューブは、制御電圧を前記ゲート電極に印加することによってチャネルを通る電流の流れが調整されるようになったチャネルを有する電界効果トランジスタのチャネル領域を定める、請求項1に記載の半導体デバイス構造体。
- 前記少なくとも1つの半導体ナノチューブが、前記水平方向面に対してほぼ垂直に配向される、請求項1に記載の半導体デバイス構造体。
- 前記ゲート電極を通って垂直方向に延びる複数の半導体ナノチューブを更に備える、請求項1に記載の半導体デバイス構造体。
- 前記ゲート誘電体が、前記少なくとも1つの半導体ナノチューブ上に配置される、請求項1に記載の半導体デバイス構造体。
- 半導体デバイス構造体を形成する方法であって、
基板上に導電性パッドを形成するステップと、
前記導電性パッドに電気的に結合された第1端部と第2の自由端部との間に、該導電性パッドからほぼ垂直方向に延びる少なくとも1つの半導体ナノチューブを成長させるステップと、
ゲート誘電体を用いて前記少なくとも1つの半導体ナノチューブを電気的に絶縁するステップと、
ゲート電極を通って垂直方向に延びる前記少なくとも1つの半導体ナノチューブを用いて、前記導電性パッドから電気的に絶縁され、かつ、該導電性パッドの上にあるゲート電極を形成するステップと、
前記少なくとも1つの半導体ナノチューブの前記第2端部に電気的に結合され、かつ、前記ゲート電極から電気的に絶縁されたコンタクトを形成するステップと
を含む方法。 - 前記少なくとも1つの半導体ナノチューブを電気的に絶縁する前記ステップが、該少なくとも1つの半導体ナノチューブを前記ゲート誘電体の内部に包み込むステップを含む、請求項11に記載の方法。
- 前記コンタクトを形成する前記ステップが、
前記少なくとも1つの半導体ナノチューブの前記自由端部から前記ゲート誘電体を除去するステップと、
前記コンタクトとして作動する金属構造を形成するステップと
を含む、請求項11に記載の方法。 - 前記ゲート電極上に絶縁層を形成するステップと、
前記絶縁層を凹ませ、前記少なくとも1つの半導体ナノチューブの前記自由端部を露出させるステップと
をさらに含む、請求項13に記載の方法。 - 前記少なくとも1つの半導体ナノチューブがカーボン・ナノチューブであり、前記導電性パッドが、カーボン・ナノチューブを成長させるのに適した触媒材料で作られており、該少なくとも1つの半導体ナノチューブを成長させるステップが、半導体分子構造を有する前記カーボン・ナノチューブに炭素原子を組み込むのに有効な条件下で、前記導電性パッドを炭素質反応物質に露出させるステップを更に含む、請求項11に記載の方法。
- 前記少なくとも1つの半導体ナノチューブを成長させる前記ステップが、化学気相成長技術によって前記少なくとも1つの半導体ナノチューブを成長させるステップを更に含む、請求項11に記載の方法。
- 前記少なくとも1つの半導体ナノチューブの前記自由端部が、前記コンタクトを構成する金属内に突出する、請求項11に記載の方法。
- 前記少なくとも1つの半導体ナノチューブが、配列された炭素原子によって特徴付けられる、請求項11に記載の方法。
- 前記少なくとも1つの半導体ナノチューブが、制御電圧を前記ゲート電極に印加することによって調整されるチャネルを有する電界効果トランジスタのチャネル領域を定める、請求項11に記載の方法。
- 前記ゲート電極を形成する前記ステップが、
前記導電性パッド上に絶縁層を適用するステップと、
前記絶縁層を覆うように導電層を適用するステップと、
前記導電層をパターン加工し、前記ゲート電極を定めるステップと
を含む、請求項11に記載の方法。 - 前記コンタクトを形成する前記ステップが、
前記絶縁層を凹ませ、前記少なくとも1つの半導体ナノチューブの前記自由端部を露出させるステップを含む、請求項20に記載の方法。 - 前記少なくとも1つの半導体ナノチューブの前記自由端部から前記ゲート誘電体を除去するステップと、
前記コンタクトとして作動する金属構造を形成するステップと
を更に含む、請求項21に記載の方法。 - 前記少なくとも1つの半導体ナノチューブは、制御電圧を前記ゲート電極に印加することによってチャネルを通る電流の流れが調整されるようになったチャネルを有する電界効果トランジスタのチャネル領域を定める、請求項11に記載の方法。
- 前記導電性パッドからほぼ垂直方向に延びる少なくとも1つの導電性ナノチューブを成長させるステップと、
前記ゲート電極を形成する前に、前記少なくとも1つの導電性ナノチューブを破壊するステップと
を更に含む、請求項11に記載の方法。 - ほぼ水平方向面を定める基板と、
前記基板上に配置された導電性の第1プレートと、
前記第1プレートから垂直方向に突出する、該第1プレートに電気的に結合された少なくとも1つのナノチューブと、
前記第1プレートの上に垂直方向に配置された導電性の第2プレートと、
前記第2プレートを前記第1プレート及び前記少なくとも1つのカーボン・ナノチューブから電気的に絶縁する誘電体層と
を備える、半導体デバイス構造体。 - 前記少なくとも1つのナノチューブが導電性分子構造を有する、請求項25に記載の半導体デバイス構造体。
- 前記少なくとも1つのナノチューブが半導体分子構造を有する、請求項25に記載の半導体デバイス構造体。
- 前記誘電体層が、前記少なくとも1つのナノチューブを包み込むコーティングを定める、請求項25に記載の半導体デバイス構造体。
- 半導体デバイス構造体を形成する方法であって、
基板上に導電性の第1プレートを形成するステップと、
前記第1プレートに電気的に結合され、該第1プレートからほぼ垂直方向に延びるように少なくとも1つのナノチューブを成長させるステップと、
前記少なくとも1つのナノチューブ及び前記第1プレートを誘電体層で覆うステップと、
前記少なくとも1つのナノチューブ及び前記第1プレートから前記誘電体層によって電気的に絶縁される第2プレートを、該第1プレートの上に形成するステップと
を含む方法。 - 前記少なくとも1つのナノチューブが導電性分子構造を有する、請求項29に記載の方法。
- 前記少なくとも1つのナノチューブが半導体分子構造を有する、請求項29に記載の方法。
- 前記少なくとも1つのナノチューブ及び前記第1のプレートを覆う前記ステップが、前記少なくとも1つのナノチューブを前記誘電体層の内部に包み込むステップを含む、請求項29に記載の方法。
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TWI343123B (en) | 2011-06-01 |
CN1914746A (zh) | 2007-02-14 |
US7691720B2 (en) | 2010-04-06 |
RU2342315C2 (ru) | 2008-12-27 |
US20080227264A1 (en) | 2008-09-18 |
TW200527667A (en) | 2005-08-16 |
KR20060127105A (ko) | 2006-12-11 |
US20050167655A1 (en) | 2005-08-04 |
JP2011258969A (ja) | 2011-12-22 |
EP1708960A1 (en) | 2006-10-11 |
RU2006130861A (ru) | 2008-03-10 |
IL177125A0 (en) | 2006-12-10 |
CN100580971C (zh) | 2010-01-13 |
JP5511746B2 (ja) | 2014-06-04 |
WO2005076381A1 (en) | 2005-08-18 |
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