JP4493344B2 - カーボン・ナノチューブ電界効果トランジスタ半導体デバイス及びこれの製造方法 - Google Patents
カーボン・ナノチューブ電界効果トランジスタ半導体デバイス及びこれの製造方法 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 102
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 98
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 98
- 230000005669 field effect Effects 0.000 title claims abstract description 53
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title description 2
- 150000004767 nitrides Chemical class 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims description 86
- 239000002184 metal Substances 0.000 claims description 86
- 239000003054 catalyst Substances 0.000 claims description 41
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 32
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 125000006850 spacer group Chemical group 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000002923 metal particle Substances 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical group [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000002245 particle Substances 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 abstract description 6
- 239000002071 nanotube Substances 0.000 description 83
- 238000000151 deposition Methods 0.000 description 21
- 238000002161 passivation Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 125000003636 chemical group Chemical group 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
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- 238000005530 etching Methods 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 108020004414 DNA Proteins 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- -1 eg 507 Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- 229910052759 nickel Inorganic materials 0.000 description 2
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- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 125000003396 thiol group Chemical group [H]S* 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- CYJRNFFLTBEQSQ-UHFFFAOYSA-N 8-(3-methyl-1-benzothiophen-5-yl)-N-(4-methylsulfonylpyridin-3-yl)quinoxalin-6-amine Chemical compound CS(=O)(=O)C1=C(C=NC=C1)NC=1C=C2N=CC=NC2=C(C=1)C=1C=CC2=C(C(=CS2)C)C=1 CYJRNFFLTBEQSQ-UHFFFAOYSA-N 0.000 description 1
- 108020004635 Complementary DNA Proteins 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
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- 239000002299 complementary DNA Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
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- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit
Description
Claims (8)
- 基板と、
該基板の一部分の上に設けられた金属触媒層と、
該金属触媒層の上に互いに間隔をおいて設けられた複数個の金属粒子触媒と、
該複数個の金属粒子触媒のそれぞれから、前記基板の表面に対して垂直方向に延び且つ互いに離隔した複数個のカーボン・ナノチューブと、
該複数個のカーボン・ナノチューブのそれぞれの周囲に設けられたゲート誘電体の第1の部分と、
前記複数個のカーボン・ナノチューブの上端に接して設けられたドレインと、
前記金属触媒層、複数個のカーボン・ナノチューブ、ゲート誘電体及びドレインの周囲に設けられ、且つ、前記ゲート誘電体の前記第1の部分、前記ドレインの下面の第2の部分及び前記金属触媒層の上面の第3の部分に接するように設けられたゲート金属層と、
前記ドレインと前記ゲート金属との間に設けられたスペーサと、
前記基板の上であって、前記金属触媒層と前記ゲート金属との間に設けられ、前記ゲート誘電体の前記第3の部分に接し且つ前記金属触媒層の外周部を取り囲む第1の窒化物層と、
前記第1の窒化物層の上方に該第1の窒化物層から間隔をおいて設けられ、前記スペーサの下面、及び、前記ゲート誘電体の前記第2の部分に接する第2の窒化物層とを備え、
前記第1の窒化物層及び前記第2の窒化物層の間の間隔内に前記ゲート金属が延在している、カーボン・ナノチューブ電界効果トランジスタ半導体デバイス。 - 前記基板の材料が、シリコンである、請求項1に記載の半導体デバイス。
- 前記金属粒子触媒の材料が、モリブデン粒子状のコバルトである、請求項1に記載の半導体デバイス。
- 前記スペーサが、窒化物である、請求項1に記載の半導体デバイス。
- 基板の表面の一部に金属触媒層を形成するステップと、
前記基板及び前記金属触媒層の上に第1の窒化物層を形成し、該第1の窒化物層の上に酸化物層を形成し、そして該酸化物層の上に第2の窒化物層を形成するステップと、
前記金属触媒層の一部を露出するステップと、
該金属触媒層の一部に互いに離隔された複数個の金属粒子触媒を形成するステップと、
該複数個の金属粒子触媒のそれぞれから前記基板の表面に対して垂直方向に延び且つ互いに離隔した複数個のカーボン・ナノチューブを成長させるステップと、
前記複数個のカーボン・ナノチューブを囲むようにアモルファス・シリコンを形成するステップと、
前記アモルファス・シリコンの一部及び前記複数個のカーボン・ナノチューブの一部を前記第2の窒化物層まで除去し、平坦化するステップと、
前記複数個のカーボン・ナノチューブ、前記金属触媒層及び前記アモルファス・シリコンを取り囲む柱を形成するように、前記第1の窒化物層、前記酸化物層及び前記第2の窒化物層を除去するステップと、
前記第2の窒化物層、前記アモルファス・シリコン及び前記複数個のカーボン・ナノチューブの上に犠牲層を形成するステップと、
前記第1の窒化物層及び前記第2の窒化物層の間にある前記酸化物層を除去し、前記アモルファス・シリコンを除去するステップと、
前記複数個のカーボン・ナノチューブのそれぞれの周囲の第1の部分と、前記犠牲層の下面の第2の部分と、前記金属触媒層の上面の第3の部分からなるゲート誘電体を形成するステップと、
前記犠牲層を除去するステップと、
前記ゲート誘電体の前記第1の部分、前記第2の部分及び前記第3の部分に接し、且つ前記複数個のカーボン・ナノチューブの上端よりも高くなるようにゲート金属を形成するステップと
少なくとも前記複数個のカーボン・ナノチューブの上端及び前記ゲート誘電体の前記第2の部分を露出するように前記ゲート金属の一部を除去するステップと、
前記複数個のカーボン・ナノチューブの上端及び前記ゲート誘電体の前記第2の部分を露出したまま残し、且つ前記ゲート金属の残存部を取り囲むようにスペーサを形成するステップと、
前記複数個のカーボン・ナノチューブの上端及び前記ゲート誘電体の前記第2の部分に接するようにドレインを形成するステップとを含む、カーボン・ナノチューブ電界効果トランジスタ半導体デバイスの製造方法。 - 前記基板の材料が、シリコンである、請求項5に記載の方法。
- 前記金属粒子触媒の材料が、モリブデン粒子上のコバルトである、請求項5に記載の方法。
- 前記スペーサが、窒化物である、請求項5に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/102,365 US6891227B2 (en) | 2002-03-20 | 2002-03-20 | Self-aligned nanotube field effect transistor and method of fabricating same |
PCT/US2003/007269 WO2003081687A2 (en) | 2002-03-20 | 2003-02-19 | Self-aligned nanotube field effect transistor and method of fabricating same |
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Publication Number | Publication Date |
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JP2006508523A JP2006508523A (ja) | 2006-03-09 |
JP4493344B2 true JP4493344B2 (ja) | 2010-06-30 |
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JP2003579292A Expired - Fee Related JP4493344B2 (ja) | 2002-03-20 | 2003-02-19 | カーボン・ナノチューブ電界効果トランジスタ半導体デバイス及びこれの製造方法 |
Country Status (14)
Country | Link |
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US (6) | US6891227B2 (ja) |
EP (2) | EP1748503B1 (ja) |
JP (1) | JP4493344B2 (ja) |
KR (1) | KR100714932B1 (ja) |
CN (2) | CN101807668B (ja) |
AT (2) | ATE516600T1 (ja) |
AU (1) | AU2003224668A1 (ja) |
BR (1) | BR0308569A (ja) |
CA (3) | CA2659479C (ja) |
IL (2) | IL164066A0 (ja) |
MX (1) | MXPA04008984A (ja) |
PL (1) | PL373571A1 (ja) |
TW (1) | TW586165B (ja) |
WO (1) | WO2003081687A2 (ja) |
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US7563711B1 (en) * | 2001-07-25 | 2009-07-21 | Nantero, Inc. | Method of forming a carbon nanotube-based contact to semiconductor |
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