US7563711B1
(en)
*
|
2001-07-25 |
2009-07-21 |
Nantero, Inc. |
Method of forming a carbon nanotube-based contact to semiconductor
|
US20040253741A1
(en)
*
|
2003-02-06 |
2004-12-16 |
Alexander Star |
Analyte detection in liquids with carbon nanotube field effect transistor devices
|
US20070178477A1
(en)
*
|
2002-01-16 |
2007-08-02 |
Nanomix, Inc. |
Nanotube sensor devices for DNA detection
|
US20060228723A1
(en)
*
|
2002-01-16 |
2006-10-12 |
Keith Bradley |
System and method for electronic sensing of biomolecules
|
US6891227B2
(en)
*
|
2002-03-20 |
2005-05-10 |
International Business Machines Corporation |
Self-aligned nanotube field effect transistor and method of fabricating same
|
JP3804594B2
(ja)
*
|
2002-08-02 |
2006-08-02 |
日本電気株式会社 |
触媒担持基板およびそれを用いたカーボンナノチューブの成長方法ならびにカーボンナノチューブを用いたトランジスタ
|
CA2499965C
(en)
*
|
2002-09-30 |
2013-03-19 |
Nanosys, Inc. |
Large-area nanoenabled macroelectronic substrates and uses therefor
|
US7135728B2
(en)
*
|
2002-09-30 |
2006-11-14 |
Nanosys, Inc. |
Large-area nanoenabled macroelectronic substrates and uses therefor
|
AU2003282558A1
(en)
*
|
2002-10-11 |
2004-05-04 |
Massachusetts Institute Of Technology |
Nanopellets and method of making nanopellets
|
JP5025132B2
(ja)
*
|
2002-10-29 |
2012-09-12 |
プレジデント・アンド・フェローズ・オブ・ハーバード・カレッジ |
カーボンナノチューブ素子の製造
|
US7253434B2
(en)
*
|
2002-10-29 |
2007-08-07 |
President And Fellows Of Harvard College |
Suspended carbon nanotube field effect transistor
|
JP4501339B2
(ja)
*
|
2002-11-29 |
2010-07-14 |
ソニー株式会社 |
pn接合素子の製造方法
|
US6933222B2
(en)
*
|
2003-01-02 |
2005-08-23 |
Intel Corporation |
Microcircuit fabrication and interconnection
|
CA2419704A1
(en)
|
2003-02-24 |
2004-08-24 |
Ignis Innovation Inc. |
Method of manufacturing a pixel with organic light-emitting diode
|
US6696327B1
(en)
*
|
2003-03-18 |
2004-02-24 |
Intel Corporation |
Method for making a semiconductor device having a high-k gate dielectric
|
US20100244262A1
(en)
|
2003-06-30 |
2010-09-30 |
Fujitsu Limited |
Deposition method and a deposition apparatus of fine particles, a forming method and a forming apparatus of carbon nanotubes, and a semiconductor device and a manufacturing method of the same
|
TWI239071B
(en)
*
|
2003-08-20 |
2005-09-01 |
Ind Tech Res Inst |
Manufacturing method of carbon nano-tube transistor
|
EP1660403B1
(en)
*
|
2003-08-20 |
2018-10-10 |
Qucor Pty Ltd |
Fabricating nanoscale and atomic scale devices
|
DE10340926A1
(de)
*
|
2003-09-03 |
2005-03-31 |
Technische Universität Ilmenau Abteilung Forschungsförderung und Technologietransfer |
Verfahren zur Herstellung von elektronischen Bauelementen
|
US7105851B2
(en)
*
|
2003-09-24 |
2006-09-12 |
Intel Corporation |
Nanotubes for integrated circuits
|
JP5250615B2
(ja)
*
|
2003-10-28 |
2013-07-31 |
株式会社半導体エネルギー研究所 |
半導体装置
|
KR101102642B1
(ko)
*
|
2003-11-18 |
2012-01-04 |
가부시키가이샤 니콘 |
표시 디바이스 제조 방법 및 표시 디바이스
|
US7038299B2
(en)
*
|
2003-12-11 |
2006-05-02 |
International Business Machines Corporation |
Selective synthesis of semiconducting carbon nanotubes
|
US7374793B2
(en)
*
|
2003-12-11 |
2008-05-20 |
International Business Machines Corporation |
Methods and structures for promoting stable synthesis of carbon nanotubes
|
DE102004001340A1
(de)
*
|
2004-01-08 |
2005-08-04 |
Infineon Technologies Ag |
Verfahren zum Herstellen eines Nanoelement-Feldeffektransistors, Nanoelement-Feldeffekttransistor und Nanoelement-Anordnung
|
DE102004003374A1
(de)
*
|
2004-01-22 |
2005-08-25 |
Infineon Technologies Ag |
Halbleiter-Leistungsschalter sowie dafür geeignetes Herstellungsverfahren
|
US7211844B2
(en)
*
|
2004-01-29 |
2007-05-01 |
International Business Machines Corporation |
Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
|
US20050167655A1
(en)
|
2004-01-29 |
2005-08-04 |
International Business Machines Corporation |
Vertical nanotube semiconductor device structures and methods of forming the same
|
US7829883B2
(en)
|
2004-02-12 |
2010-11-09 |
International Business Machines Corporation |
Vertical carbon nanotube field effect transistors and arrays
|
KR101050468B1
(ko)
*
|
2004-02-14 |
2011-07-19 |
삼성에스디아이 주식회사 |
바이오 칩 및 이를 이용한 바이오 분자 검출 시스템
|
US7253431B2
(en)
*
|
2004-03-02 |
2007-08-07 |
International Business Machines Corporation |
Method and apparatus for solution processed doping of carbon nanotube
|
US7019391B2
(en)
*
|
2004-04-06 |
2006-03-28 |
Bao Tran |
NANO IC packaging
|
US7330369B2
(en)
*
|
2004-04-06 |
2008-02-12 |
Bao Tran |
NANO-electronic memory array
|
US20050218398A1
(en)
*
|
2004-04-06 |
2005-10-06 |
Availableip.Com |
NANO-electronics
|
US7862624B2
(en)
*
|
2004-04-06 |
2011-01-04 |
Bao Tran |
Nano-particles on fabric or textile
|
US20050218397A1
(en)
*
|
2004-04-06 |
2005-10-06 |
Availableip.Com |
NANO-electronics for programmable array IC
|
US7498641B2
(en)
*
|
2004-05-28 |
2009-03-03 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Partial replacement silicide gate
|
US7109546B2
(en)
*
|
2004-06-29 |
2006-09-19 |
International Business Machines Corporation |
Horizontal memory gain cells
|
US7129097B2
(en)
*
|
2004-07-29 |
2006-10-31 |
International Business Machines Corporation |
Integrated circuit chip utilizing oriented carbon nanotube conductive layers
|
US20060063318A1
(en)
*
|
2004-09-10 |
2006-03-23 |
Suman Datta |
Reducing ambipolar conduction in carbon nanotube transistors
|
KR101025846B1
(ko)
*
|
2004-09-13 |
2011-03-30 |
삼성전자주식회사 |
탄소나노튜브 채널을 포함하는 반도체 장치의 트랜지스터
|
US7943418B2
(en)
|
2004-09-16 |
2011-05-17 |
Etamota Corporation |
Removing undesirable nanotubes during nanotube device fabrication
|
US7462890B1
(en)
|
2004-09-16 |
2008-12-09 |
Atomate Corporation |
Nanotube transistor integrated circuit layout
|
US7345296B2
(en)
*
|
2004-09-16 |
2008-03-18 |
Atomate Corporation |
Nanotube transistor and rectifying devices
|
US7776307B2
(en)
|
2004-09-16 |
2010-08-17 |
Etamota Corporation |
Concentric gate nanotube transistor devices
|
US7233071B2
(en)
*
|
2004-10-04 |
2007-06-19 |
International Business Machines Corporation |
Low-k dielectric layer based upon carbon nanostructures
|
US20070246784A1
(en)
*
|
2004-10-13 |
2007-10-25 |
Samsung Electronics Co., Ltd. |
Unipolar nanotube transistor using a carrier-trapping material
|
US7226818B2
(en)
|
2004-10-15 |
2007-06-05 |
General Electric Company |
High performance field effect transistors comprising carbon nanotubes fabricated using solution based processing
|
CN100420033C
(zh)
*
|
2004-10-28 |
2008-09-17 |
鸿富锦精密工业(深圳)有限公司 |
场效应晶体管及其制造方法
|
US7582534B2
(en)
*
|
2004-11-18 |
2009-09-01 |
International Business Machines Corporation |
Chemical doping of nano-components
|
US7405129B2
(en)
*
|
2004-11-18 |
2008-07-29 |
International Business Machines Corporation |
Device comprising doped nano-component and method of forming the device
|
WO2006086074A2
(en)
*
|
2004-12-16 |
2006-08-17 |
William Marsh Rice University |
Carbon nanotube substrates and catalyzed hot stamp for polishing and patterning the substrates
|
US7202173B2
(en)
*
|
2004-12-20 |
2007-04-10 |
Palo Alto Research Corporation Incorporated |
Systems and methods for electrical contacts to arrays of vertically aligned nanorods
|
US7598516B2
(en)
*
|
2005-01-07 |
2009-10-06 |
International Business Machines Corporation |
Self-aligned process for nanotube/nanowire FETs
|
US8362525B2
(en)
*
|
2005-01-14 |
2013-01-29 |
Nantero Inc. |
Field effect device having a channel of nanofabric and methods of making same
|
US7598544B2
(en)
*
|
2005-01-14 |
2009-10-06 |
Nanotero, Inc. |
Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
|
CA2495726A1
(en)
|
2005-01-28 |
2006-07-28 |
Ignis Innovation Inc. |
Locally referenced voltage programmed pixel for amoled displays
|
US7535016B2
(en)
*
|
2005-01-31 |
2009-05-19 |
International Business Machines Corporation |
Vertical carbon nanotube transistor integration
|
JP5127442B2
(ja)
*
|
2005-02-10 |
2013-01-23 |
パナソニック株式会社 |
微細構造体を保持するための構造体の製造方法、半導体装置の製造方法、およびセンサの製造方法
|
US20100065820A1
(en)
*
|
2005-02-14 |
2010-03-18 |
Atomate Corporation |
Nanotube Device Having Nanotubes with Multiple Characteristics
|
US20060180859A1
(en)
*
|
2005-02-16 |
2006-08-17 |
Marko Radosavljevic |
Metal gate carbon nanotube transistor
|
US7671398B2
(en)
*
|
2005-02-23 |
2010-03-02 |
Tran Bao Q |
Nano memory, light, energy, antenna and strand-based systems and methods
|
US7126207B2
(en)
*
|
2005-03-24 |
2006-10-24 |
Intel Corporation |
Capacitor with carbon nanotubes
|
EP2348300A3
(en)
*
|
2005-04-06 |
2011-10-12 |
The President and Fellows of Harvard College |
Molecular characterization with carbon nanotube control
|
US7271079B2
(en)
|
2005-04-06 |
2007-09-18 |
International Business Machines Corporation |
Method of doping a gate electrode of a field effect transistor
|
KR101109623B1
(ko)
|
2005-04-07 |
2012-01-31 |
엘지디스플레이 주식회사 |
박막트랜지스터와 그 제조방법.
|
KR101145146B1
(ko)
|
2005-04-07 |
2012-05-14 |
엘지디스플레이 주식회사 |
박막트랜지스터와 그 제조방법
|
US7479654B2
(en)
|
2005-05-09 |
2009-01-20 |
Nantero, Inc. |
Memory arrays using nanotube articles with reprogrammable resistance
|
US7781862B2
(en)
*
|
2005-05-09 |
2010-08-24 |
Nantero, Inc. |
Two-terminal nanotube devices and systems and methods of making same
|
US7141727B1
(en)
*
|
2005-05-16 |
2006-11-28 |
International Business Machines Corporation |
Method and apparatus for fabricating a carbon nanotube transistor having unipolar characteristics
|
US7230286B2
(en)
*
|
2005-05-23 |
2007-06-12 |
International Business Machines Corporation |
Vertical FET with nanowire channels and a silicided bottom contact
|
US7838943B2
(en)
*
|
2005-07-25 |
2010-11-23 |
International Business Machines Corporation |
Shared gate for conventional planar device and horizontal CNT
|
US20070031318A1
(en)
*
|
2005-08-03 |
2007-02-08 |
Jie Liu |
Methods of chemically treating an electrically conductive layer having nanotubes therein with diazonium reagent
|
US7485908B2
(en)
*
|
2005-08-18 |
2009-02-03 |
United States Of America As Represented By The Secretary Of The Air Force |
Insulated gate silicon nanowire transistor and method of manufacture
|
US7371677B2
(en)
*
|
2005-09-30 |
2008-05-13 |
Freescale Semiconductor, Inc. |
Laterally grown nanotubes and method of formation
|
US7492015B2
(en)
*
|
2005-11-10 |
2009-02-17 |
International Business Machines Corporation |
Complementary carbon nanotube triple gate technology
|
KR100792402B1
(ko)
|
2005-12-28 |
2008-01-09 |
주식회사 하이닉스반도체 |
듀얼폴리게이트를 갖는 반도체소자의 제조 방법
|
WO2007092770A2
(en)
*
|
2006-02-02 |
2007-08-16 |
William Marsh Rice University |
Fabrication de dispositifs electriques par façonnage de nanotubes
|
US20070183189A1
(en)
*
|
2006-02-08 |
2007-08-09 |
Thomas Nirschl |
Memory having nanotube transistor access device
|
US8759811B2
(en)
*
|
2006-02-14 |
2014-06-24 |
Raytheon Company |
Particle encapsulated nanoswitch
|
KR100668355B1
(ko)
*
|
2006-02-16 |
2007-01-12 |
삼성전자주식회사 |
캐리어 트래핑 물질을 구비한 유니폴라 탄소나노튜브 및유니폴라 전계효과 트랜지스터
|
US8124503B2
(en)
|
2006-03-03 |
2012-02-28 |
William Marsh Rice University |
Carbon nanotube diameter selection by pretreatment of metal catalysts on surfaces
|
KR100777265B1
(ko)
*
|
2006-03-30 |
2007-11-20 |
고려대학교 산학협력단 |
나노 입자를 이용한 전면 게이트 박막 트랜지스터 및 그제조 방법
|
US8785058B2
(en)
|
2006-04-07 |
2014-07-22 |
New Jersey Institute Of Technology |
Integrated biofuel cell with aligned nanotube electrodes and method of use thereof
|
US7626190B2
(en)
|
2006-06-02 |
2009-12-01 |
Infineon Technologies Ag |
Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device
|
DE102006026949A1
(de)
*
|
2006-06-09 |
2007-12-13 |
Infineon Technologies Ag |
Speicherbauelement, insbesondere Phasenwechselspeicherbauelement mit wahlfreiem Zugriff mit Transistor, und Verfahren zum Herstellen eines Speicherbauelements
|
US7714386B2
(en)
|
2006-06-09 |
2010-05-11 |
Northrop Grumman Systems Corporation |
Carbon nanotube field effect transistor
|
US7393699B2
(en)
|
2006-06-12 |
2008-07-01 |
Tran Bao Q |
NANO-electronics
|
US20070290394A1
(en)
*
|
2006-06-20 |
2007-12-20 |
International Business Machines Corporation |
Method and structure for forming self-planarizing wiring layers in multilevel electronic devices
|
US20080135892A1
(en)
*
|
2006-07-25 |
2008-06-12 |
Paul Finnie |
Carbon nanotube field effect transistor and method of making thereof
|
FR2897978A1
(fr)
*
|
2006-08-03 |
2007-08-31 |
Commissariat Energie Atomique |
Cellule de memoire comportant un transistor moleculaire, dispositif comportant une pluralite de telles cellules et procede d'utilisation
|
JP5168888B2
(ja)
*
|
2006-11-20 |
2013-03-27 |
日本電気株式会社 |
半導体装置及びその製造方法
|
KR100912111B1
(ko)
*
|
2006-12-04 |
2009-08-13 |
한국전자통신연구원 |
쇼트키 장벽 나노선 전계 효과 트랜지스터 및 그 제조방법
|
US8168495B1
(en)
|
2006-12-29 |
2012-05-01 |
Etamota Corporation |
Carbon nanotube high frequency transistor technology
|
US9806273B2
(en)
*
|
2007-01-03 |
2017-10-31 |
The United States Of America As Represented By The Secretary Of The Army |
Field effect transistor array using single wall carbon nano-tubes
|
DE102007001130B4
(de)
*
|
2007-01-04 |
2014-07-03 |
Qimonda Ag |
Verfahren zum Herstellen einer Durchkontaktierung in einer Schicht und Anordnung mit einer Schicht mit Durchkontaktierung
|
US7511344B2
(en)
*
|
2007-01-17 |
2009-03-31 |
International Business Machines Corporation |
Field effect transistor
|
US8039870B2
(en)
*
|
2008-01-28 |
2011-10-18 |
Rf Nano Corporation |
Multifinger carbon nanotube field-effect transistor
|
US8569834B2
(en)
*
|
2007-04-12 |
2013-10-29 |
The Penn State Research Foundation |
Accumulation field effect microelectronic device and process for the formation thereof
|
US9209246B2
(en)
|
2007-04-12 |
2015-12-08 |
The Penn State University |
Accumulation field effect microelectronic device and process for the formation thereof
|
WO2009023304A2
(en)
*
|
2007-05-02 |
2009-02-19 |
Atomate Corporation |
High density nanotube devices
|
US8546027B2
(en)
|
2007-06-20 |
2013-10-01 |
New Jersey Institute Of Technology |
System and method for directed self-assembly technique for the creation of carbon nanotube sensors and bio-fuel cells on single plane
|
US7964143B2
(en)
|
2007-06-20 |
2011-06-21 |
New Jersey Institute Of Technology |
Nanotube device and method of fabrication
|
US7736979B2
(en)
*
|
2007-06-20 |
2010-06-15 |
New Jersey Institute Of Technology |
Method of forming nanotube vertical field effect transistor
|
US7858454B2
(en)
*
|
2007-07-31 |
2010-12-28 |
Rf Nano Corporation |
Self-aligned T-gate carbon nanotube field effect transistor devices and method for forming the same
|
CN101442105B
(zh)
*
|
2007-11-21 |
2010-06-09 |
中国科学院化学研究所 |
一种有机场效应晶体管及其专用源漏电极与制备方法
|
EP2238611A2
(en)
*
|
2007-12-31 |
2010-10-13 |
Etamota Corporation |
Edge-contacted vertical carbon nanotube transistor
|
KR100930997B1
(ko)
*
|
2008-01-22 |
2009-12-10 |
한국화학연구원 |
탄소나노튜브 트랜지스터 제조 방법 및 그에 의한탄소나노튜브 트랜지스터
|
US8847249B2
(en)
|
2008-06-16 |
2014-09-30 |
Soraa, Inc. |
Solid-state optical device having enhanced indium content in active regions
|
US7858506B2
(en)
*
|
2008-06-18 |
2010-12-28 |
Micron Technology, Inc. |
Diodes, and methods of forming diodes
|
US8143148B1
(en)
*
|
2008-07-14 |
2012-03-27 |
Soraa, Inc. |
Self-aligned multi-dielectric-layer lift off process for laser diode stripes
|
US8805134B1
(en)
|
2012-02-17 |
2014-08-12 |
Soraa Laser Diode, Inc. |
Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
|
US8767787B1
(en)
|
2008-07-14 |
2014-07-01 |
Soraa Laser Diode, Inc. |
Integrated laser diodes with quality facets on GaN substrates
|
US8284810B1
(en)
|
2008-08-04 |
2012-10-09 |
Soraa, Inc. |
Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
|
JP2011530194A
(ja)
|
2008-08-04 |
2011-12-15 |
ソラア インコーポレーテッド |
物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス
|
US8063454B2
(en)
|
2008-08-13 |
2011-11-22 |
Micron Technology, Inc. |
Semiconductor structures including a movable switching element and systems including same
|
US9494615B2
(en)
*
|
2008-11-24 |
2016-11-15 |
Massachusetts Institute Of Technology |
Method of making and assembling capsulated nanostructures
|
US7893492B2
(en)
*
|
2009-02-17 |
2011-02-22 |
International Business Machines Corporation |
Nanowire mesh device and method of fabricating same
|
US8247886B1
(en)
|
2009-03-09 |
2012-08-21 |
Soraa, Inc. |
Polarization direction of optical devices using selected spatial configurations
|
US8634442B1
(en)
|
2009-04-13 |
2014-01-21 |
Soraa Laser Diode, Inc. |
Optical device structure using GaN substrates for laser applications
|
US9531164B2
(en)
*
|
2009-04-13 |
2016-12-27 |
Soraa Laser Diode, Inc. |
Optical device structure using GaN substrates for laser applications
|
US8837545B2
(en)
|
2009-04-13 |
2014-09-16 |
Soraa Laser Diode, Inc. |
Optical device structure using GaN substrates and growth structures for laser applications
|
US9829780B2
(en)
|
2009-05-29 |
2017-11-28 |
Soraa Laser Diode, Inc. |
Laser light source for a vehicle
|
US10108079B2
(en)
|
2009-05-29 |
2018-10-23 |
Soraa Laser Diode, Inc. |
Laser light source for a vehicle
|
US9250044B1
(en)
|
2009-05-29 |
2016-02-02 |
Soraa Laser Diode, Inc. |
Gallium and nitrogen containing laser diode dazzling devices and methods of use
|
US8509275B1
(en)
|
2009-05-29 |
2013-08-13 |
Soraa, Inc. |
Gallium nitride based laser dazzling device and method
|
US8247887B1
(en)
|
2009-05-29 |
2012-08-21 |
Soraa, Inc. |
Method and surface morphology of non-polar gallium nitride containing substrates
|
US8427590B2
(en)
|
2009-05-29 |
2013-04-23 |
Soraa, Inc. |
Laser based display method and system
|
US9800017B1
(en)
|
2009-05-29 |
2017-10-24 |
Soraa Laser Diode, Inc. |
Laser device and method for a vehicle
|
US8895352B2
(en)
|
2009-06-02 |
2014-11-25 |
International Business Machines Corporation |
Method to improve nucleation of materials on graphene and carbon nanotubes
|
US8128993B2
(en)
*
|
2009-07-31 |
2012-03-06 |
Nantero Inc. |
Anisotropic nanotube fabric layers and films and methods of forming same
|
US8574673B2
(en)
*
|
2009-07-31 |
2013-11-05 |
Nantero Inc. |
Anisotropic nanotube fabric layers and films and methods of forming same
|
CN101997035B
(zh)
*
|
2009-08-14 |
2012-08-29 |
清华大学 |
薄膜晶体管
|
US8355418B2
(en)
|
2009-09-17 |
2013-01-15 |
Soraa, Inc. |
Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
|
US8750342B1
(en)
|
2011-09-09 |
2014-06-10 |
Soraa Laser Diode, Inc. |
Laser diodes with scribe structures
|
US9583678B2
(en)
|
2009-09-18 |
2017-02-28 |
Soraa, Inc. |
High-performance LED fabrication
|
US20110127492A1
(en)
*
|
2009-11-30 |
2011-06-02 |
International Business Machines Corporation |
Field Effect Transistor Having Nanostructure Channel
|
US8841652B2
(en)
*
|
2009-11-30 |
2014-09-23 |
International Business Machines Corporation |
Self aligned carbide source/drain FET
|
US8384065B2
(en)
*
|
2009-12-04 |
2013-02-26 |
International Business Machines Corporation |
Gate-all-around nanowire field effect transistors
|
US8097515B2
(en)
*
|
2009-12-04 |
2012-01-17 |
International Business Machines Corporation |
Self-aligned contacts for nanowire field effect transistors
|
US8173993B2
(en)
*
|
2009-12-04 |
2012-05-08 |
International Business Machines Corporation |
Gate-all-around nanowire tunnel field effect transistors
|
WO2011068028A1
(en)
|
2009-12-04 |
2011-06-09 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor element, semiconductor device, and method for manufacturing the same
|
US8455334B2
(en)
*
|
2009-12-04 |
2013-06-04 |
International Business Machines Corporation |
Planar and nanowire field effect transistors
|
US8129247B2
(en)
|
2009-12-04 |
2012-03-06 |
International Business Machines Corporation |
Omega shaped nanowire field effect transistors
|
US8143113B2
(en)
|
2009-12-04 |
2012-03-27 |
International Business Machines Corporation |
Omega shaped nanowire tunnel field effect transistors fabrication
|
EP2517250A1
(en)
*
|
2009-12-21 |
2012-10-31 |
Imec |
Double gate nanostructure fet
|
WO2011077966A1
(en)
*
|
2009-12-25 |
2011-06-30 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device and method for manufacturing the same
|
US8101474B2
(en)
*
|
2010-01-06 |
2012-01-24 |
International Business Machines Corporation |
Structure and method of forming buried-channel graphene field effect device
|
US8722492B2
(en)
*
|
2010-01-08 |
2014-05-13 |
International Business Machines Corporation |
Nanowire pin tunnel field effect devices
|
US10147850B1
(en)
|
2010-02-03 |
2018-12-04 |
Soraa, Inc. |
System and method for providing color light sources in proximity to predetermined wavelength conversion structures
|
US8905588B2
(en)
|
2010-02-03 |
2014-12-09 |
Sorra, Inc. |
System and method for providing color light sources in proximity to predetermined wavelength conversion structures
|
US8436403B2
(en)
*
|
2010-02-05 |
2013-05-07 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device including transistor provided with sidewall and electronic appliance
|
JP5601848B2
(ja)
*
|
2010-02-09 |
2014-10-08 |
三菱電機株式会社 |
SiC半導体装置の製造方法
|
WO2011103558A1
(en)
*
|
2010-02-22 |
2011-08-25 |
Nantero, Inc. |
Logic elements comprising carbon nanotube field effect transistor (cntfet) devices and methods of making same
|
WO2011105198A1
(en)
*
|
2010-02-26 |
2011-09-01 |
Semiconductor Energy Laboratory Co., Ltd. |
Semiconductor device
|
US20110233513A1
(en)
*
|
2010-03-29 |
2011-09-29 |
International Business Machines Corporation |
Enhanced bonding interfaces on carbon-based materials for nanoelectronic devices
|
US8324940B2
(en)
|
2010-04-13 |
2012-12-04 |
International Business Machines Corporation |
Nanowire circuits in matched devices
|
US8361907B2
(en)
|
2010-05-10 |
2013-01-29 |
International Business Machines Corporation |
Directionally etched nanowire field effect transistors
|
US8324030B2
(en)
|
2010-05-12 |
2012-12-04 |
International Business Machines Corporation |
Nanowire tunnel field effect transistors
|
US8451876B1
(en)
|
2010-05-17 |
2013-05-28 |
Soraa, Inc. |
Method and system for providing bidirectional light sources with broad spectrum
|
US8513099B2
(en)
|
2010-06-17 |
2013-08-20 |
International Business Machines Corporation |
Epitaxial source/drain contacts self-aligned to gates for deposited FET channels
|
US9450143B2
(en)
|
2010-06-18 |
2016-09-20 |
Soraa, Inc. |
Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices
|
US8404539B2
(en)
|
2010-07-08 |
2013-03-26 |
International Business Machines Corporation |
Self-aligned contacts in carbon devices
|
WO2012014786A1
(en)
*
|
2010-07-30 |
2012-02-02 |
Semiconductor Energy Laboratory Co., Ltd. |
Semicondcutor device and manufacturing method thereof
|
US8835231B2
(en)
|
2010-08-16 |
2014-09-16 |
International Business Machines Corporation |
Methods of forming contacts for nanowire field effect transistors
|
US8536563B2
(en)
|
2010-09-17 |
2013-09-17 |
International Business Machines Corporation |
Nanowire field effect transistors
|
US8816319B1
(en)
|
2010-11-05 |
2014-08-26 |
Soraa Laser Diode, Inc. |
Method of strain engineering and related optical device using a gallium and nitrogen containing active region
|
US9048170B2
(en)
|
2010-11-09 |
2015-06-02 |
Soraa Laser Diode, Inc. |
Method of fabricating optical devices using laser treatment
|
US8597967B1
(en)
|
2010-11-17 |
2013-12-03 |
Soraa, Inc. |
Method and system for dicing substrates containing gallium and nitrogen material
|
US9595813B2
(en)
|
2011-01-24 |
2017-03-14 |
Soraa Laser Diode, Inc. |
Laser package having multiple emitters configured on a substrate member
|
US9025635B2
(en)
|
2011-01-24 |
2015-05-05 |
Soraa Laser Diode, Inc. |
Laser package having multiple emitters configured on a support member
|
US9093820B1
(en)
|
2011-01-25 |
2015-07-28 |
Soraa Laser Diode, Inc. |
Method and structure for laser devices using optical blocking regions
|
US9287684B2
(en)
|
2011-04-04 |
2016-03-15 |
Soraa Laser Diode, Inc. |
Laser package having multiple emitters with color wheel
|
US8471249B2
(en)
*
|
2011-05-10 |
2013-06-25 |
International Business Machines Corporation |
Carbon field effect transistors having charged monolayers to reduce parasitic resistance
|
US9606607B2
(en)
|
2011-05-17 |
2017-03-28 |
Ignis Innovation Inc. |
Systems and methods for display systems with dynamic power control
|
US8455365B2
(en)
*
|
2011-05-19 |
2013-06-04 |
Dechao Guo |
Self-aligned carbon electronics with embedded gate electrode
|
US8492748B2
(en)
*
|
2011-06-27 |
2013-07-23 |
International Business Machines Corporation |
Collapsable gate for deposited nanostructures
|
US8486778B2
(en)
|
2011-07-15 |
2013-07-16 |
International Business Machines Corporation |
Low resistance source and drain extensions for ETSOI
|
US8729529B2
(en)
*
|
2011-08-03 |
2014-05-20 |
Ignis Innovation Inc. |
Thin film transistor including a nanoconductor layer
|
US8686431B2
(en)
|
2011-08-22 |
2014-04-01 |
Soraa, Inc. |
Gallium and nitrogen containing trilateral configuration for optical devices
|
WO2013043545A1
(en)
|
2011-09-19 |
2013-03-28 |
California Institute Of Technology |
Using a field effect device for identifying translocating charge-tagged molecules in a nanopore sequencing device
|
US8803129B2
(en)
*
|
2011-10-11 |
2014-08-12 |
International Business Machines Corporation |
Patterning contacts in carbon nanotube devices
|
US8971370B1
(en)
|
2011-10-13 |
2015-03-03 |
Soraa Laser Diode, Inc. |
Laser devices using a semipolar plane
|
US8629010B2
(en)
|
2011-10-21 |
2014-01-14 |
International Business Machines Corporation |
Carbon nanotube transistor employing embedded electrodes
|
US8569121B2
(en)
*
|
2011-11-01 |
2013-10-29 |
International Business Machines Corporation |
Graphene and nanotube/nanowire transistor with a self-aligned gate structure on transparent substrates and method of making same
|
US8772782B2
(en)
|
2011-11-23 |
2014-07-08 |
International Business Machines Corporation |
Transistor employing vertically stacked self-aligned carbon nanotubes
|
US8912025B2
(en)
|
2011-11-23 |
2014-12-16 |
Soraa, Inc. |
Method for manufacture of bright GaN LEDs using a selective removal process
|
JP5887881B2
(ja)
*
|
2011-11-28 |
2016-03-16 |
株式会社リコー |
配線の形成方法
|
US8772910B2
(en)
|
2011-11-29 |
2014-07-08 |
International Business Machines Corporation |
Doping carbon nanotubes and graphene for improving electronic mobility
|
US8895417B2
(en)
|
2011-11-29 |
2014-11-25 |
International Business Machines Corporation |
Reducing contact resistance for field-effect transistor devices
|
US9385169B2
(en)
|
2011-11-29 |
2016-07-05 |
Ignis Innovation Inc. |
Multi-functional active matrix organic light-emitting diode display
|
US8642432B2
(en)
|
2011-12-01 |
2014-02-04 |
International Business Machines Corporation |
N-dopant for carbon nanotubes and graphene
|
US9663369B2
(en)
|
2011-12-16 |
2017-05-30 |
International Business Machines Corporation |
Cerium (IV) salts as effective dopant for carbon nanotubes and graphene
|
US9240552B2
(en)
|
2011-12-27 |
2016-01-19 |
Intel Corporation |
Carbon nanotube semiconductor devices and deterministic nanofabrication methods
|
US10224413B1
(en)
*
|
2012-01-30 |
2019-03-05 |
Northrop Grumman Systems Corporation |
Radio-frequency carbon-nanotube field effect transistor devices with local backgates and methods for making same
|
JP2013179274A
(ja)
*
|
2012-02-09 |
2013-09-09 |
Nippon Telegr & Teleph Corp <Ntt> |
電界効果トランジスタおよびその製造方法
|
US9020003B1
(en)
|
2012-03-14 |
2015-04-28 |
Soraa Laser Diode, Inc. |
Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
|
US9343871B1
(en)
|
2012-04-05 |
2016-05-17 |
Soraa Laser Diode, Inc. |
Facet on a gallium and nitrogen containing laser diode
|
EP2674996A1
(en)
*
|
2012-06-15 |
2013-12-18 |
Imec VZW |
Method for growing nanostructures in recessed structures
|
US8741756B2
(en)
|
2012-08-13 |
2014-06-03 |
International Business Machines Corporation |
Contacts-first self-aligned carbon nanotube transistor with gate-all-around
|
US8786018B2
(en)
|
2012-09-11 |
2014-07-22 |
International Business Machines Corporation |
Self-aligned carbon nanostructure field effect transistors using selective dielectric deposition
|
US8823059B2
(en)
*
|
2012-09-27 |
2014-09-02 |
Intel Corporation |
Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack
|
US8735869B2
(en)
*
|
2012-09-27 |
2014-05-27 |
Intel Corporation |
Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates
|
US9978904B2
(en)
|
2012-10-16 |
2018-05-22 |
Soraa, Inc. |
Indium gallium nitride light emitting devices
|
US8796096B2
(en)
|
2012-12-04 |
2014-08-05 |
International Business Machines Corporation |
Self-aligned double-gate graphene transistor
|
US8609481B1
(en)
|
2012-12-05 |
2013-12-17 |
International Business Machines Corporation |
Gate-all-around carbon nanotube transistor with selectively doped spacers
|
US8900975B2
(en)
|
2013-01-03 |
2014-12-02 |
International Business Machines Corporation |
Nanopore sensor device
|
JP5637231B2
(ja)
*
|
2013-03-04 |
2014-12-10 |
富士通株式会社 |
電界効果型トランジスタの製造方法
|
US9721505B2
(en)
|
2013-03-08 |
2017-08-01 |
Ignis Innovation Inc. |
Pixel circuits for AMOLED displays
|
JP6376788B2
(ja)
|
2013-03-26 |
2018-08-22 |
株式会社半導体エネルギー研究所 |
半導体装置およびその作製方法
|
US9048216B2
(en)
|
2013-04-17 |
2015-06-02 |
International Business Machines Corporation |
Self aligned embedded gate carbon transistors
|
US9193585B2
(en)
|
2013-06-07 |
2015-11-24 |
International Business Machines Corporation |
Surface modification using functional carbon nanotubes
|
US8841189B1
(en)
*
|
2013-06-14 |
2014-09-23 |
International Business Machines Corporation |
Transistor having all-around source/drain metal contact channel stressor and method to fabricate same
|
JP2015032662A
(ja)
*
|
2013-08-01 |
2015-02-16 |
株式会社東芝 |
半導体装置及びその製造方法
|
US9406888B2
(en)
*
|
2013-08-07 |
2016-08-02 |
GlobalFoundries, Inc. |
Carbon nanotube device
|
US9419189B1
(en)
|
2013-11-04 |
2016-08-16 |
Soraa, Inc. |
Small LED source with high brightness and high efficiency
|
CN104576324A
(zh)
*
|
2013-12-21 |
2015-04-29 |
上海大学 |
碳基电子的制作及互连方法
|
CA2872563A1
(en)
|
2014-11-28 |
2016-05-28 |
Ignis Innovation Inc. |
High pixel density array architecture
|
US9857328B2
(en)
|
2014-12-18 |
2018-01-02 |
Agilome, Inc. |
Chemically-sensitive field effect transistors, systems and methods for manufacturing and using the same
|
US9859394B2
(en)
|
2014-12-18 |
2018-01-02 |
Agilome, Inc. |
Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
|
US9618474B2
(en)
|
2014-12-18 |
2017-04-11 |
Edico Genome, Inc. |
Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
|
US10006910B2
(en)
|
2014-12-18 |
2018-06-26 |
Agilome, Inc. |
Chemically-sensitive field effect transistors, systems, and methods for manufacturing and using the same
|
US10020300B2
(en)
|
2014-12-18 |
2018-07-10 |
Agilome, Inc. |
Graphene FET devices, systems, and methods of using the same for sequencing nucleic acids
|
WO2016100049A1
(en)
|
2014-12-18 |
2016-06-23 |
Edico Genome Corporation |
Chemically-sensitive field effect transistor
|
US9502673B2
(en)
*
|
2015-03-31 |
2016-11-22 |
International Business Machines Corporation |
Transistor devices with tapered suspended vertical arrays of carbon nanotubes
|
US10217819B2
(en)
*
|
2015-05-20 |
2019-02-26 |
Samsung Electronics Co., Ltd. |
Semiconductor device including metal-2 dimensional material-semiconductor contact
|
US10373554B2
(en)
|
2015-07-24 |
2019-08-06 |
Ignis Innovation Inc. |
Pixels and reference circuits and timing techniques
|
US10657895B2
(en)
|
2015-07-24 |
2020-05-19 |
Ignis Innovation Inc. |
Pixels and reference circuits and timing techniques
|
CA2898282A1
(en)
|
2015-07-24 |
2017-01-24 |
Ignis Innovation Inc. |
Hybrid calibration of current sources for current biased voltage progra mmed (cbvp) displays
|
US9787963B2
(en)
|
2015-10-08 |
2017-10-10 |
Soraa Laser Diode, Inc. |
Laser lighting having selective resolution
|
JP6851166B2
(ja)
|
2015-10-12 |
2021-03-31 |
株式会社半導体エネルギー研究所 |
半導体装置の作製方法
|
US10276698B2
(en)
|
2015-10-21 |
2019-04-30 |
International Business Machines Corporation |
Scalable process for the formation of self aligned, planar electrodes for devices employing one or two dimensional lattice structures
|
CA2909813A1
(en)
|
2015-10-26 |
2017-04-26 |
Ignis Innovation Inc |
High ppi pattern orientation
|
US9577204B1
(en)
|
2015-10-30 |
2017-02-21 |
International Business Machines Corporation |
Carbon nanotube field-effect transistor with sidewall-protected metal contacts
|
US9837394B2
(en)
|
2015-12-02 |
2017-12-05 |
International Business Machines Corporation |
Self-aligned three dimensional chip stack and method for making the same
|
US10396300B2
(en)
|
2015-12-03 |
2019-08-27 |
International Business Machines Corporation |
Carbon nanotube device with N-type end-bonded metal contacts
|
WO2017201081A1
(en)
|
2016-05-16 |
2017-11-23 |
Agilome, Inc. |
Graphene fet devices, systems, and methods of using the same for sequencing nucleic acids
|
US10665798B2
(en)
*
|
2016-07-14 |
2020-05-26 |
International Business Machines Corporation |
Carbon nanotube transistor and logic with end-bonded metal contacts
|
US10665799B2
(en)
*
|
2016-07-14 |
2020-05-26 |
International Business Machines Corporation |
N-type end-bonded metal contacts for carbon nanotube transistors
|
US10825681B2
(en)
*
|
2016-08-13 |
2020-11-03 |
Applied Materials, Inc. |
3D CTF integration using hybrid charge trap layer of sin and self aligned SiGe nanodot
|
GB2554362B
(en)
*
|
2016-09-21 |
2020-11-11 |
Pragmatic Printing Ltd |
Transistor and its method of manufacture
|
CN106229348A
(zh)
*
|
2016-09-22 |
2016-12-14 |
京东方科技集团股份有限公司 |
薄膜晶体管及其制造方法、阵列基板、显示装置
|
US10586491B2
(en)
|
2016-12-06 |
2020-03-10 |
Ignis Innovation Inc. |
Pixel circuits for mitigation of hysteresis
|
US10304804B2
(en)
*
|
2017-03-31 |
2019-05-28 |
Intel Corporation |
System on package architecture including structures on die back side
|
US10714018B2
(en)
|
2017-05-17 |
2020-07-14 |
Ignis Innovation Inc. |
System and method for loading image correction data for displays
|
US10141528B1
(en)
*
|
2017-05-23 |
2018-11-27 |
International Business Machines Corporation |
Enhancing drive current and increasing device yield in n-type carbon nanotube field effect transistors
|
US10193090B2
(en)
*
|
2017-06-20 |
2019-01-29 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Method of manufacturing a semiconductor device and a semiconductor device
|
JP7118973B2
(ja)
*
|
2017-08-04 |
2022-08-16 |
株式会社半導体エネルギー研究所 |
半導体装置
|
US11025899B2
(en)
|
2017-08-11 |
2021-06-01 |
Ignis Innovation Inc. |
Optical correction systems and methods for correcting non-uniformity of emissive display devices
|
US10771155B2
(en)
|
2017-09-28 |
2020-09-08 |
Soraa Laser Diode, Inc. |
Intelligent visible light with a gallium and nitrogen containing laser source
|
CN107706307B
(zh)
*
|
2017-10-13 |
2020-05-19 |
深圳市华星光电半导体显示技术有限公司 |
碳纳米管薄膜晶体管及其制作方法
|
CN107819037B
(zh)
*
|
2017-12-07 |
2023-10-27 |
苏州大学 |
应用碳纳米管作为导电沟槽的鳍式场效应管及其制备方法
|
US10333088B1
(en)
|
2017-12-12 |
2019-06-25 |
International Business Machines Corporation |
Carbon nanotube transistor with carrier blocking using thin dielectric under contact
|
US10222474B1
(en)
|
2017-12-13 |
2019-03-05 |
Soraa Laser Diode, Inc. |
Lidar systems including a gallium and nitrogen containing laser light source
|
US10971078B2
(en)
|
2018-02-12 |
2021-04-06 |
Ignis Innovation Inc. |
Pixel measurement through data line
|
US10551728B1
(en)
|
2018-04-10 |
2020-02-04 |
Soraa Laser Diode, Inc. |
Structured phosphors for dynamic lighting
|
CN109560125B
(zh)
*
|
2018-11-27 |
2022-03-11 |
湖南工业大学 |
金属堆叠源漏电极场效应管及其制作方法
|
US11239637B2
(en)
|
2018-12-21 |
2022-02-01 |
Kyocera Sld Laser, Inc. |
Fiber delivered laser induced white light system
|
US11421843B2
(en)
|
2018-12-21 |
2022-08-23 |
Kyocera Sld Laser, Inc. |
Fiber-delivered laser-induced dynamic light system
|
US11884202B2
(en)
|
2019-01-18 |
2024-01-30 |
Kyocera Sld Laser, Inc. |
Laser-based fiber-coupled white light system
|
US12000552B2
(en)
|
2019-01-18 |
2024-06-04 |
Kyocera Sld Laser, Inc. |
Laser-based fiber-coupled white light system for a vehicle
|
KR102666776B1
(ko)
*
|
2019-05-10 |
2024-05-21 |
삼성디스플레이 주식회사 |
박막 트랜지스터의 제조 방법, 표시 장치의 제조 방법 및 박막 트랜지스터 기판
|
CN110364438B
(zh)
*
|
2019-05-29 |
2023-05-05 |
北京华碳元芯电子科技有限责任公司 |
晶体管及其制造方法
|
CN110571333B
(zh)
*
|
2019-08-13 |
2023-06-30 |
北京元芯碳基集成电路研究院 |
一种无掺杂晶体管器件制作方法
|
DE102020109756A1
(de)
*
|
2019-08-29 |
2021-03-04 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
Transistoren mit kanälen gebildet aus niedrigdimensionalenmaterialien und verfahren zum bilden derselben
|
US11417729B2
(en)
|
2019-08-29 |
2022-08-16 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Transistors with channels formed of low-dimensional materials and method forming same
|
CN113644112B
(zh)
*
|
2020-05-11 |
2022-07-15 |
北京华碳元芯电子科技有限责任公司 |
晶体管及制作方法
|
WO2022039148A1
(ja)
*
|
2020-08-17 |
2022-02-24 |
株式会社村田製作所 |
半導体センサ
|
WO2023097120A1
(en)
*
|
2021-11-29 |
2023-06-01 |
Duke University |
Metallic single-walled carbon nanotube hybrid assemblies and superstructures
|