JP2006310458A - 半導体装置の製造方法 - Google Patents
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/66818—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the channel being thinned after patterning, e.g. sacrificial oxidation on fin
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78609—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device for preventing leakage current
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Abstract
【解決手段】半導体装置の製造方法は、第1導電型の半導体基板11上にマスク層13を形成する工程と、半導体基板11をマスク層13をマスクとしてエッチングし、半導体基板11に凸状半導体層14を形成する工程と、半導体基板11上で凸状半導体層14の下部を覆うように第1絶縁層15を形成する工程と、第1絶縁層15に第1導電型の不純物を導入し、凸状半導体層14の下部に高濃度層16を形成する工程と、第1絶縁層15の表面上で凸状半導体層14の側面上にゲート絶縁膜17を形成する工程と、ゲート絶縁膜17上にゲート電極18を形成する工程とを含む。
【選択図】 図3
Description
Masaki Kondo et al., "A FinFET Design Based on Three-Dimensional Process and Device Simulations", Toshiba Corporation, IEEE, 2003.
図1は、本発明の第1の実施形態に係る半導体装置の主要部を示す斜視図である。図2は、図1に示した半導体装置を示す平面図である。図3は、図2に示したB−B´線に沿った断面図である。
第2の実施形態は、N型半導体基板を用い、このN型半導体基板に形成されたフィンに砒素をイオン注入してパンチスルーストッパー層を形成するようにしている。
第3の実施形態は、フィン14内に2つのパンチスルーストッパー層を設けるようにしたものである。以下に、本発明の第3の実施形態に係る半導体装置の製造方法を説明する。図10までの製造工程は、第1の実施形態と同じである。
第4の実施形態は、不純物の加速電圧を調節してフィン14内に2つのパンチスルーストッパー層を形成するようにしたものである。以下に、本発明の第4の実施形態に係る半導体装置の製造方法を説明する。図11までの製造工程は、第1の実施形態と同じである。
第5の実施形態は、半導体基板としてSOI(Silicon On Insulator)構造を有する基板を用いてFinFETを形成したものである。
第6の実施形態は、エクステンション領域の不純物プロファイルを均一にするための製造方法について示している。第1の実施形態では、ゲート電極18の両側面にオフセットスペーサ20A,20Bを形成した後、半導体基板11に垂直方向(Y方向)からエクステンション領域形成のためのイオン注入を行っている。
上記各実施形態は、ダブルゲート構造を有するFinFETに本発明を適用した例を示している。しかし、これに限定されるものではなく、他のゲート構造を有するFinFETに適用してもかまわない。以下に、他のゲート構造を有するFinFETについて説明する。
Claims (5)
- 第1導電型の半導体基板上にマスク層を形成する工程と、
前記半導体基板を前記マスク層をマスクとしてエッチングし、前記半導体基板に凸状半導体層を形成する工程と、
前記半導体基板上で前記凸状半導体層の下部を覆うように第1絶縁層を形成する工程と、
前記第1絶縁層に第1導電型の不純物を導入し、前記凸状半導体層の下部に高濃度層を形成する工程と、
前記第1絶縁層の表面上で前記凸状半導体層の側面上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
を具備することを特徴とする半導体装置の製造方法。 - 前記高濃度層の不純物濃度のピークは、前記凸状半導体層内で前記半導体基板の表面と前記第1絶縁層の表面との間にあることを特徴とする請求項1記載の半導体装置の製造方法。
- 前記高濃度層を形成する工程の後に、前記不純物が拡散するように、前記第1絶縁層および前記凸状半導体層を熱処理する工程をさらに具備することを特徴とする請求項1又は2に記載の半導体装置の製造方法。
- 前記高濃度層は、前記凸状半導体層のチャネル領域の下部に形成されることを特徴とする請求項1乃至3のいずれかに記載の半導体装置の製造方法。
- 第1導電型の半導体基板をエッチングし、前記半導体基板に凸状半導体層を形成する工程と、
前記凸状半導体層の側面上にゲート絶縁膜を形成する工程と、
前記ゲート絶縁膜上にゲート電極を形成する工程と、
半導体基板上で前記ゲート電極の両側面にそれぞれ第1および第2側壁絶縁膜を形成する工程と、
前記第1および第2側壁絶縁膜に第2導電型の不純物を導入し、前記凸状半導体層内に第1および第2エクステンション領域を形成する工程と、
を具備することを特徴とする半導体装置の製造方法。
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JP2005129608A JP4551811B2 (ja) | 2005-04-27 | 2005-04-27 | 半導体装置の製造方法 |
US11/203,425 US7662679B2 (en) | 2005-04-27 | 2005-08-15 | Semiconductor manufacturing method and semiconductor device |
US12/613,143 US8043904B2 (en) | 2005-04-27 | 2009-11-05 | Semiconductor manufacturing method and semiconductor device |
US13/099,587 US8148217B2 (en) | 2005-04-27 | 2011-05-03 | Semiconductor manufacturing method and semiconductor device |
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US9806154B2 (en) * | 2015-01-20 | 2017-10-31 | Taiwan Semiconductor Manufacturing Company Ltd. | FinFET structure and method for manufacturing thereof |
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US9954107B2 (en) * | 2015-05-05 | 2018-04-24 | International Business Machines Corporation | Strained FinFET source drain isolation |
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US9698225B2 (en) * | 2015-07-07 | 2017-07-04 | International Business Machines Corporation | Localized and self-aligned punch through stopper doping for finFET |
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US11222947B2 (en) | 2015-09-25 | 2022-01-11 | Intel Corporation | Methods of doping fin structures of non-planar transistor devices |
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US10700197B2 (en) | 2017-09-29 | 2020-06-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05167043A (ja) * | 1991-04-26 | 1993-07-02 | Canon Inc | 改良された絶縁ゲート型トランジスタを有する半導体装置 |
JPH09246201A (ja) * | 1996-03-07 | 1997-09-19 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH1093093A (ja) * | 1996-09-18 | 1998-04-10 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2002118255A (ja) * | 2000-07-31 | 2002-04-19 | Toshiba Corp | 半導体装置およびその製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5315143A (en) * | 1992-04-28 | 1994-05-24 | Matsushita Electric Industrial Co., Ltd. | High density integrated semiconductor device |
JP3378414B2 (ja) * | 1994-09-14 | 2003-02-17 | 株式会社東芝 | 半導体装置 |
EP0881691B1 (en) * | 1997-05-30 | 2004-09-01 | Matsushita Electric Industrial Co., Ltd. | Quantum dot device |
KR100476940B1 (ko) * | 2003-06-20 | 2005-03-16 | 삼성전자주식회사 | 기판으로부터 수직으로 연장된 게이트 채널을 갖는디램기억 셀 및 그 제조방법 |
JP4551811B2 (ja) * | 2005-04-27 | 2010-09-29 | 株式会社東芝 | 半導体装置の製造方法 |
-
2005
- 2005-04-27 JP JP2005129608A patent/JP4551811B2/ja active Active
- 2005-08-15 US US11/203,425 patent/US7662679B2/en active Active
-
2009
- 2009-11-05 US US12/613,143 patent/US8043904B2/en active Active
-
2011
- 2011-05-03 US US13/099,587 patent/US8148217B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05167043A (ja) * | 1991-04-26 | 1993-07-02 | Canon Inc | 改良された絶縁ゲート型トランジスタを有する半導体装置 |
JPH09246201A (ja) * | 1996-03-07 | 1997-09-19 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH1093093A (ja) * | 1996-09-18 | 1998-04-10 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2002118255A (ja) * | 2000-07-31 | 2002-04-19 | Toshiba Corp | 半導体装置およびその製造方法 |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006310651A (ja) * | 2005-04-28 | 2006-11-09 | Toshiba Corp | 半導体装置の製造方法 |
US7867853B2 (en) | 2007-12-27 | 2011-01-11 | Elpida Memory, Inc. | Method of manufacturing semiconductor device and semiconductor Fin-shaped channel |
JP2009267021A (ja) * | 2008-04-24 | 2009-11-12 | Toshiba Corp | 半導体装置及びその製造方法 |
US8569867B2 (en) | 2011-06-15 | 2013-10-29 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2013046065A (ja) * | 2011-08-19 | 2013-03-04 | Altera Corp | バッファ付きフィンfetデバイス |
KR102287271B1 (ko) * | 2014-06-26 | 2021-08-06 | 인텔 코포레이션 | 도핑된 하위 핀 영역을 가진 오메가 핀을 갖는 비 평면 반도체 디바이스 및 이것을 제조하는 방법 |
JP2017523593A (ja) * | 2014-06-26 | 2017-08-17 | インテル・コーポレーション | ドープサブフィン領域があるオメガフィンを有する非プレーナ型半導体デバイスおよびそれを製造する方法 |
US10355093B2 (en) | 2014-06-26 | 2019-07-16 | Intel Corporation | Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same |
KR20170022981A (ko) * | 2014-06-26 | 2017-03-02 | 인텔 코포레이션 | 도핑된 하위 핀 영역을 가진 오메가 핀을 갖는 비 평면 반도체 디바이스 및 이것을 제조하는 방법 |
KR20210098559A (ko) * | 2014-06-26 | 2021-08-10 | 인텔 코포레이션 | 도핑된 하위 핀 영역을 가진 오메가 핀을 갖는 비 평면 반도체 디바이스 및 이것을 제조하는 방법 |
US11276760B2 (en) | 2014-06-26 | 2022-03-15 | Intel Corporation | Non-planar semiconductor device having omega-fin with doped sub-fin region and method to fabricate same |
KR102449437B1 (ko) * | 2014-06-26 | 2022-09-30 | 인텔 코포레이션 | 도핑된 하위 핀 영역을 가진 오메가 핀을 갖는 비 평면 반도체 디바이스 및 이것을 제조하는 방법 |
JP2017130677A (ja) * | 2017-03-08 | 2017-07-27 | インテル・コーポレーション | ドープサブフィン領域があるオメガフィンを有する非プレーナ型半導体デバイスおよびそれを製造する方法 |
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US8148217B2 (en) | 2012-04-03 |
US20110207309A1 (en) | 2011-08-25 |
JP4551811B2 (ja) | 2010-09-29 |
US20060244051A1 (en) | 2006-11-02 |
US7662679B2 (en) | 2010-02-16 |
US20100055886A1 (en) | 2010-03-04 |
US8043904B2 (en) | 2011-10-25 |
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