JP2006270028A - 半導体発光素子 - Google Patents

半導体発光素子 Download PDF

Info

Publication number
JP2006270028A
JP2006270028A JP2005253412A JP2005253412A JP2006270028A JP 2006270028 A JP2006270028 A JP 2006270028A JP 2005253412 A JP2005253412 A JP 2005253412A JP 2005253412 A JP2005253412 A JP 2005253412A JP 2006270028 A JP2006270028 A JP 2006270028A
Authority
JP
Japan
Prior art keywords
layer
light emitting
semiconductor light
emitting device
active layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005253412A
Other languages
English (en)
Japanese (ja)
Inventor
Kyosuke Kuramoto
恭介 蔵本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2005253412A priority Critical patent/JP2006270028A/ja
Priority to TW095100042A priority patent/TWI418106B/zh
Priority to US11/326,503 priority patent/US7756177B2/en
Priority to CNB200610008808XA priority patent/CN100539334C/zh
Priority to KR1020060017047A priority patent/KR100812319B1/ko
Publication of JP2006270028A publication Critical patent/JP2006270028A/ja
Priority to JP2006305764A priority patent/JP2007036298A/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61H—PHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
    • A61H33/00—Bathing devices for special therapeutic or hygienic purposes
    • A61H33/06—Artificial hot-air or cold-air baths; Steam or gas baths or douches, e.g. sauna or Finnish baths
    • A61H33/063—Heaters specifically designed therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/02—Details
    • H05B3/06—Heater elements structurally combined with coupling elements or holders
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61H—PHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
    • A61H33/00—Bathing devices for special therapeutic or hygienic purposes
    • A61H33/06—Artificial hot-air or cold-air baths; Steam or gas baths or douches, e.g. sauna or Finnish baths
    • A61H2033/061—Artificial hot-air baths
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61H—PHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
    • A61H2201/00—Characteristics of apparatus not provided for in the preceding codes
    • A61H2201/01—Constructive details
    • A61H2201/0165—Damping, vibration related features
    • A61H2201/0169—Noise reduction
    • A—HUMAN NECESSITIES
    • A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
    • A61H—PHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
    • A61H2201/00—Characteristics of apparatus not provided for in the preceding codes
    • A61H2201/02—Characteristics of apparatus not provided for in the preceding codes heated or cooled
    • A61H2201/0221—Mechanism for heating or cooling
    • A61H2201/0228—Mechanism for heating or cooling heated by an electric resistance element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Nanotechnology (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Public Health (AREA)
  • Epidemiology (AREA)
  • Pain & Pain Management (AREA)
  • Physical Education & Sports Medicine (AREA)
  • Rehabilitation Therapy (AREA)
  • Animal Behavior & Ethology (AREA)
  • General Health & Medical Sciences (AREA)
  • Veterinary Medicine (AREA)
  • Semiconductor Lasers (AREA)
JP2005253412A 2005-02-25 2005-09-01 半導体発光素子 Pending JP2006270028A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005253412A JP2006270028A (ja) 2005-02-25 2005-09-01 半導体発光素子
TW095100042A TWI418106B (zh) 2005-02-25 2006-01-02 半導體發光元件
US11/326,503 US7756177B2 (en) 2005-02-25 2006-01-06 Semiconductor light-emitting device
CNB200610008808XA CN100539334C (zh) 2005-02-25 2006-02-14 半导体发光元件
KR1020060017047A KR100812319B1 (ko) 2005-02-25 2006-02-22 반도체 발광소자
JP2006305764A JP2007036298A (ja) 2005-02-25 2006-11-10 半導体発光素子

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005051279 2005-02-25
JP2005253412A JP2006270028A (ja) 2005-02-25 2005-09-01 半導体発光素子

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006305764A Division JP2007036298A (ja) 2005-02-25 2006-11-10 半導体発光素子

Publications (1)

Publication Number Publication Date
JP2006270028A true JP2006270028A (ja) 2006-10-05

Family

ID=36931896

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005253412A Pending JP2006270028A (ja) 2005-02-25 2005-09-01 半導体発光素子
JP2006305764A Withdrawn JP2007036298A (ja) 2005-02-25 2006-11-10 半導体発光素子

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2006305764A Withdrawn JP2007036298A (ja) 2005-02-25 2006-11-10 半導体発光素子

Country Status (5)

Country Link
US (1) US7756177B2 (enExample)
JP (2) JP2006270028A (enExample)
KR (1) KR100812319B1 (enExample)
CN (1) CN100539334C (enExample)
TW (1) TWI418106B (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273901A (ja) * 2006-03-31 2007-10-18 Mitsubishi Electric Corp 半導体発光素子
JP2011505069A (ja) * 2007-11-30 2011-02-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光素子の製造方法および発光素子
WO2013046564A1 (ja) * 2011-09-29 2013-04-04 パナソニック株式会社 窒化物半導体発光素子およびｌｅｄシステム
CN105590998A (zh) * 2014-11-06 2016-05-18 丰田合成株式会社 Iii族氮化物半导体发光器件及其生产方法
JP2020150252A (ja) * 2019-03-07 2020-09-17 旭化成株式会社 窒化物半導体素子
JP2021184502A (ja) * 2014-12-08 2021-12-02 パロ アルト リサーチ センター インコーポレイテッド ｎ−クラッド層に工学的不均一合金組成を有する窒化物レーザーダイオード

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007040295A1 (en) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. (al, ga, in)n-based compound semiconductor and method of fabricating the same
KR20070080696A (ko) * 2006-02-08 2007-08-13 삼성전자주식회사 질화물계 반도체 레이저 다이오드
JP2007214378A (ja) * 2006-02-09 2007-08-23 Rohm Co Ltd 窒化物系半導体素子
US7852893B2 (en) * 2007-02-26 2010-12-14 Kabushiki Kaisha Toshiba Semiconductor laser device
US8847249B2 (en) 2008-06-16 2014-09-30 Soraa, Inc. Solid-state optical device having enhanced indium content in active regions
US8259769B1 (en) 2008-07-14 2012-09-04 Soraa, Inc. Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates
US8143148B1 (en) 2008-07-14 2012-03-27 Soraa, Inc. Self-aligned multi-dielectric-layer lift off process for laser diode stripes
US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
JP2011530194A (ja) 2008-08-04 2011-12-15 ソラア インコーポレーテッド 物質および蛍光体を含んだ非分極性あるいは半極性のガリウムを用いた白色灯デバイス
US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8422525B1 (en) 2009-03-28 2013-04-16 Soraa, Inc. Optical device structure using miscut GaN substrates for laser applications
US8294179B1 (en) * 2009-04-17 2012-10-23 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8242522B1 (en) 2009-05-12 2012-08-14 Soraa, Inc. Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm
US8254425B1 (en) 2009-04-17 2012-08-28 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US9531164B2 (en) 2009-04-13 2016-12-27 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8416825B1 (en) 2009-04-17 2013-04-09 Soraa, Inc. Optical device structure using GaN substrates and growth structure for laser applications
US8427590B2 (en) 2009-05-29 2013-04-23 Soraa, Inc. Laser based display method and system
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
US9800017B1 (en) 2009-05-29 2017-10-24 Soraa Laser Diode, Inc. Laser device and method for a vehicle
US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US10108079B2 (en) 2009-05-29 2018-10-23 Soraa Laser Diode, Inc. Laser light source for a vehicle
JP5333133B2 (ja) * 2009-06-19 2013-11-06 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザダイオード
US8314429B1 (en) 2009-09-14 2012-11-20 Soraa, Inc. Multi color active regions for white light emitting diode
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
WO2011035265A1 (en) 2009-09-18 2011-03-24 Soraa, Inc. Power light emitting diode and method with current density operation
JP2011086778A (ja) * 2009-10-15 2011-04-28 Panasonic Corp 窒化物半導体レーザ装置
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US9927611B2 (en) 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US8975615B2 (en) 2010-11-09 2015-03-10 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9318875B1 (en) 2011-01-24 2016-04-19 Soraa Laser Diode, Inc. Color converting element for laser diode
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
US9236530B2 (en) 2011-04-01 2016-01-12 Soraa, Inc. Miscut bulk substrates
US9287684B2 (en) 2011-04-04 2016-03-15 Soraa Laser Diode, Inc. Laser package having multiple emitters with color wheel
US9646827B1 (en) 2011-08-23 2017-05-09 Soraa, Inc. Method for smoothing surface of a substrate containing gallium and nitrogen
US8971370B1 (en) 2011-10-13 2015-03-03 Soraa Laser Diode, Inc. Laser devices using a semipolar plane
TWI480941B (zh) * 2011-10-21 2015-04-11 穩懋半導體股份有限公司 高抗折強度半導體晶元改良結構及其製程方法
CN103066026B (zh) * 2011-10-21 2015-10-21 稳懋半导体股份有限公司 高抗折强度半导体晶元改良结构及其制造方法
US8835283B2 (en) 2011-10-21 2014-09-16 Win Semiconductors Corp. Fabrication method for producing semiconductor chips with enhanced die strength
CN104247052B (zh) * 2012-03-06 2017-05-03 天空公司 具有减少导光效果的低折射率材料层的发光二极管
US9020003B1 (en) 2012-03-14 2015-04-28 Soraa Laser Diode, Inc. Group III-nitride laser diode grown on a semi-polar orientation of gallium and nitrogen containing substrates
US10559939B1 (en) 2012-04-05 2020-02-11 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9343871B1 (en) 2012-04-05 2016-05-17 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9800016B1 (en) 2012-04-05 2017-10-24 Soraa Laser Diode, Inc. Facet on a gallium and nitrogen containing laser diode
US9099843B1 (en) 2012-07-19 2015-08-04 Soraa Laser Diode, Inc. High operating temperature laser diodes
US8971368B1 (en) 2012-08-16 2015-03-03 Soraa Laser Diode, Inc. Laser devices having a gallium and nitrogen containing semipolar surface orientation
US9166372B1 (en) 2013-06-28 2015-10-20 Soraa Laser Diode, Inc. Gallium nitride containing laser device configured on a patterned substrate
US9520695B2 (en) 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
US9209596B1 (en) 2014-02-07 2015-12-08 Soraa Laser Diode, Inc. Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
US9564736B1 (en) 2014-06-26 2017-02-07 Soraa Laser Diode, Inc. Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
US12126143B2 (en) 2014-11-06 2024-10-22 Kyocera Sld Laser, Inc. Method of manufacture for an ultraviolet emitting optoelectronic device
US9246311B1 (en) 2014-11-06 2016-01-26 Soraa Laser Diode, Inc. Method of manufacture for an ultraviolet laser diode
CN105790072A (zh) * 2014-12-18 2016-07-20 中国科学院苏州纳米技术与纳米仿生研究所 半导体激光器及其制备方法
US9666677B1 (en) 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
US9653642B1 (en) 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
US10879673B2 (en) 2015-08-19 2020-12-29 Soraa Laser Diode, Inc. Integrated white light source using a laser diode and a phosphor in a surface mount device package
US11437775B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. Integrated light source using a laser diode
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10938182B2 (en) 2015-08-19 2021-03-02 Soraa Laser Diode, Inc. Specialized integrated light source using a laser diode
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
CN115602765A (zh) * 2016-09-13 2023-01-13 苏州立琻半导体有限公司（Cn） 半导体器件和包括该半导体器件的半导体器件封装
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
CN111668697B (zh) * 2019-03-07 2023-04-18 旭化成株式会社 氮化物半导体元件
US11228158B2 (en) 2019-05-14 2022-01-18 Kyocera Sld Laser, Inc. Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
US10903623B2 (en) 2019-05-14 2021-01-26 Soraa Laser Diode, Inc. Method and structure for manufacturable large area gallium and nitrogen containing substrate
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02254784A (ja) * 1989-03-28 1990-10-15 Sharp Corp 半導体レーザ素子
JPH10173292A (ja) * 1996-12-13 1998-06-26 Nec Corp 窒化ガリウム系半導体レーザ
JPH10256657A (ja) * 1997-03-07 1998-09-25 Sharp Corp 窒化ガリウム系半導体発光素子、及び半導体レーザ光源装置
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
JP2000196200A (ja) * 1998-12-25 2000-07-14 Sanyo Electric Co Ltd 発光素子
JP2000277862A (ja) * 1999-03-23 2000-10-06 Matsushita Electric Ind Co Ltd 窒化物半導体素子
JP2002335052A (ja) * 2001-05-10 2002-11-22 Nichia Chem Ind Ltd 窒化物半導体素子
JP2004221428A (ja) * 2003-01-16 2004-08-05 Toshiba Corp 光半導体素子およびその製造方法
JP2004253776A (ja) * 2003-01-31 2004-09-09 Sharp Corp 半導体レーザ素子及び光学式情報記録装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3080831B2 (ja) * 1994-02-03 2000-08-28 日本電気株式会社 多重量子井戸半導体レーザ
JP3453916B2 (ja) 1995-04-03 2003-10-06 ソニー株式会社 半導体レーザ
DE69834415T2 (de) * 1997-03-07 2006-11-16 Sharp K.K. Lichtemittierendes galliumnitridhalbleiterelement mit einer aktiven schicht mit multiplexquantentrogstruktur und halbleiterlaserlichtquellenvorrichtung
JPH10261838A (ja) 1997-03-19 1998-09-29 Sharp Corp 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置
CN1278464C (zh) 2001-09-28 2006-10-04 三井化学株式会社 半导体激光元件及使用它的激光模块
WO2003085790A1 (fr) * 2002-04-04 2003-10-16 Sharp Kabushiki Kaisha Dispositif laser a semi-conducteur
US7058105B2 (en) * 2002-10-17 2006-06-06 Samsung Electro-Mechanics Co., Ltd. Semiconductor optoelectronic device

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02254784A (ja) * 1989-03-28 1990-10-15 Sharp Corp 半導体レーザ素子
JPH10173292A (ja) * 1996-12-13 1998-06-26 Nec Corp 窒化ガリウム系半導体レーザ
JPH10256657A (ja) * 1997-03-07 1998-09-25 Sharp Corp 窒化ガリウム系半導体発光素子、及び半導体レーザ光源装置
JPH11163458A (ja) * 1997-11-26 1999-06-18 Mitsui Chem Inc 半導体レーザ装置
JP2000196200A (ja) * 1998-12-25 2000-07-14 Sanyo Electric Co Ltd 発光素子
JP2000277862A (ja) * 1999-03-23 2000-10-06 Matsushita Electric Ind Co Ltd 窒化物半導体素子
JP2002335052A (ja) * 2001-05-10 2002-11-22 Nichia Chem Ind Ltd 窒化物半導体素子
JP2004221428A (ja) * 2003-01-16 2004-08-05 Toshiba Corp 光半導体素子およびその製造方法
JP2004253776A (ja) * 2003-01-31 2004-09-09 Sharp Corp 半導体レーザ素子及び光学式情報記録装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
M.J.BERGMANN, ET AL.: "Optical-field caluculations for lossy multiple-layer AlxGa1-x/lnxGa1-XN laser diodes", JOURNAL OF APPLIED PHYSICS, vol. 84, no. 3, JPN2098050372, August 1998 (1998-08-01), US, pages 1196 - 1203, ISSN: 0000817068 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007273901A (ja) * 2006-03-31 2007-10-18 Mitsubishi Electric Corp 半導体発光素子
JP2011505069A (ja) * 2007-11-30 2011-02-17 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 発光素子の製造方法および発光素子
US9018641B2 (en) 2007-11-30 2015-04-28 CSRAM Opto Semiconductors GmbH Method for producing a radiation-emitting component and radiation-emitting component
WO2013046564A1 (ja) * 2011-09-29 2013-04-04 パナソニック株式会社 窒化物半導体発光素子およびｌｅｄシステム
JP5296264B1 (ja) * 2011-09-29 2013-09-25 パナソニック株式会社 窒化物半導体発光素子およびｌｅｄシステム
US9318659B2 (en) 2011-09-29 2016-04-19 Panasonic Intellectual Property Management Co., Ltd. Nitride semiconductor light emitting element having light emitting layer including INxGa1-xN well layer and LED system
CN105590998A (zh) * 2014-11-06 2016-05-18 丰田合成株式会社 Iii族氮化物半导体发光器件及其生产方法
CN105590998B (zh) * 2014-11-06 2018-04-13 丰田合成株式会社 Iii族氮化物半导体发光器件及其生产方法
JP2021184502A (ja) * 2014-12-08 2021-12-02 パロ アルト リサーチ センター インコーポレイテッド ｎ−クラッド層に工学的不均一合金組成を有する窒化物レーザーダイオード
JP7242783B2 (ja) 2014-12-08 2023-03-20 パロ アルト リサーチ センター インコーポレイテッド ｎ－クラッド層に工学的不均一合金組成を有する窒化物レーザーダイオード
JP2020150252A (ja) * 2019-03-07 2020-09-17 旭化成株式会社 窒化物半導体素子
JP7410508B2 (ja) 2019-03-07 2024-01-10 旭化成株式会社 窒化物半導体素子

Also Published As

Publication number Publication date
KR100812319B1 (ko) 2008-03-10
TWI418106B (zh) 2013-12-01
CN100539334C (zh) 2009-09-09
JP2007036298A (ja) 2007-02-08
US20060193359A1 (en) 2006-08-31
KR20060094882A (ko) 2006-08-30
US7756177B2 (en) 2010-07-13
TW200637091A (en) 2006-10-16
CN1825723A (zh) 2006-08-30

Similar Documents

Publication Publication Date Title
JP2006270028A (ja) 半導体発光素子
KR20070058397A (ko) 반도체 발광소자
CN101272037A (zh) 半导体光元件的制造方法
JP2007235107A (ja) 半導体発光素子
JP3718952B2 (ja) 半導体レーザ
JP2013074002A (ja) 発光素子及びその製造方法
JP2002124737A (ja) 窒化物系半導体レーザ素子
JP2007095758A (ja) 半導体レーザ
JP2000164986A (ja) 半導体発光装置及びその製造方法
JP4028158B2 (ja) 半導体光デバイス装置
CN115362609A (zh) 半导体激光装置以及半导体激光装置的制造方法
KR100682426B1 (ko) 반도체 레이저장치
JP7065330B2 (ja) 半導体レーザ素子
KR100789309B1 (ko) 반도체 레이저
JP3645320B2 (ja) 半導体レーザ素子
JP2007273901A (ja) 半導体発光素子
JP2010123726A (ja) 半導体レーザおよびその製造方法
JP2009277844A (ja) 窒化物半導体レーザ素子
US20070171948A1 (en) Semiconductor laser having an improved stacked structure
JP2003298192A (ja) 窒化物系半導体レーザ素子
JP4117557B2 (ja) 半導体レーザ装置及びその製造方法
JPH11186655A (ja) 半導体レーザ
JP2005327907A (ja) 半導体レーザ素子
JP2008022043A (ja) 半導体レーザ装置の製造方法
JP4544665B2 (ja) 半導体レーザ

Legal Events

Date Code Title Description
A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20060912

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20061110

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20061120

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20070209