CN100539334C - 半导体发光元件 - Google Patents
半导体发光元件 Download PDFInfo
- Publication number
- CN100539334C CN100539334C CNB200610008808XA CN200610008808A CN100539334C CN 100539334 C CN100539334 C CN 100539334C CN B200610008808X A CNB200610008808X A CN B200610008808XA CN 200610008808 A CN200610008808 A CN 200610008808A CN 100539334 C CN100539334 C CN 100539334C
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- active layer
- covering
- emitting elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61H—PHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
- A61H33/00—Bathing devices for special therapeutic or hygienic purposes
- A61H33/06—Artificial hot-air or cold-air baths; Steam or gas baths or douches, e.g. sauna or Finnish baths
- A61H33/063—Heaters specifically designed therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/02—Details
- H05B3/06—Heater elements structurally combined with coupling elements or holders
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61H—PHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
- A61H33/00—Bathing devices for special therapeutic or hygienic purposes
- A61H33/06—Artificial hot-air or cold-air baths; Steam or gas baths or douches, e.g. sauna or Finnish baths
- A61H2033/061—Artificial hot-air baths
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61H—PHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
- A61H2201/00—Characteristics of apparatus not provided for in the preceding codes
- A61H2201/01—Constructive details
- A61H2201/0165—Damping, vibration related features
- A61H2201/0169—Noise reduction
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61H—PHYSICAL THERAPY APPARATUS, e.g. DEVICES FOR LOCATING OR STIMULATING REFLEX POINTS IN THE BODY; ARTIFICIAL RESPIRATION; MASSAGE; BATHING DEVICES FOR SPECIAL THERAPEUTIC OR HYGIENIC PURPOSES OR SPECIFIC PARTS OF THE BODY
- A61H2201/00—Characteristics of apparatus not provided for in the preceding codes
- A61H2201/02—Characteristics of apparatus not provided for in the preceding codes heated or cooled
- A61H2201/0221—Mechanism for heating or cooling
- A61H2201/0228—Mechanism for heating or cooling heated by an electric resistance element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Biophysics (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Pain & Pain Management (AREA)
- Physical Education & Sports Medicine (AREA)
- Rehabilitation Therapy (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Veterinary Medicine (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005051279 | 2005-02-25 | ||
| JP2005051279 | 2005-02-25 | ||
| JP2005253412A JP2006270028A (ja) | 2005-02-25 | 2005-09-01 | 半導体発光素子 |
| JP2005253412 | 2005-09-01 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1825723A CN1825723A (zh) | 2006-08-30 |
| CN100539334C true CN100539334C (zh) | 2009-09-09 |
Family
ID=36931896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200610008808XA Expired - Fee Related CN100539334C (zh) | 2005-02-25 | 2006-02-14 | 半导体发光元件 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7756177B2 (enExample) |
| JP (2) | JP2006270028A (enExample) |
| KR (1) | KR100812319B1 (enExample) |
| CN (1) | CN100539334C (enExample) |
| TW (1) | TWI418106B (enExample) |
Families Citing this family (97)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007040295A1 (en) * | 2005-10-04 | 2007-04-12 | Seoul Opto Device Co., Ltd. | (al, ga, in)n-based compound semiconductor and method of fabricating the same |
| KR20070080696A (ko) * | 2006-02-08 | 2007-08-13 | 삼성전자주식회사 | 질화물계 반도체 레이저 다이오드 |
| JP2007214378A (ja) * | 2006-02-09 | 2007-08-23 | Rohm Co Ltd | 窒化物系半導体素子 |
| JP2007273901A (ja) * | 2006-03-31 | 2007-10-18 | Mitsubishi Electric Corp | 半導体発光素子 |
| US7852893B2 (en) * | 2007-02-26 | 2010-12-14 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
| DE102007061458A1 (de) | 2007-11-30 | 2009-06-04 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines strahlungsemittierenden Bauelements und strahlungsemittierendes Bauelement |
| US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
| US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
| US8259769B1 (en) | 2008-07-14 | 2012-09-04 | Soraa, Inc. | Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates |
| US8143148B1 (en) | 2008-07-14 | 2012-03-27 | Soraa, Inc. | Self-aligned multi-dielectric-layer lift off process for laser diode stripes |
| US8124996B2 (en) | 2008-08-04 | 2012-02-28 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
| US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
| US8422525B1 (en) | 2009-03-28 | 2013-04-16 | Soraa, Inc. | Optical device structure using miscut GaN substrates for laser applications |
| US8294179B1 (en) * | 2009-04-17 | 2012-10-23 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
| US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
| US8254425B1 (en) | 2009-04-17 | 2012-08-28 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
| US8242522B1 (en) | 2009-05-12 | 2012-08-14 | Soraa, Inc. | Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm |
| US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
| DE112010001615T5 (de) | 2009-04-13 | 2012-08-02 | Soraa, Inc. | Stuktur eines optischen Elements unter Verwendung von GaN-Substraten für Laseranwendungen |
| US8416825B1 (en) | 2009-04-17 | 2013-04-09 | Soraa, Inc. | Optical device structure using GaN substrates and growth structure for laser applications |
| US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
| US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
| US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
| US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
| US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
| US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
| US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
| JP5333133B2 (ja) * | 2009-06-19 | 2013-11-06 | 住友電気工業株式会社 | Iii族窒化物半導体レーザダイオード |
| US8314429B1 (en) | 2009-09-14 | 2012-11-20 | Soraa, Inc. | Multi color active regions for white light emitting diode |
| US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
| US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
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| CN111668697B (zh) * | 2019-03-07 | 2023-04-18 | 旭化成株式会社 | 氮化物半导体元件 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02254784A (ja) * | 1989-03-28 | 1990-10-15 | Sharp Corp | 半導体レーザ素子 |
| JP3080831B2 (ja) * | 1994-02-03 | 2000-08-28 | 日本電気株式会社 | 多重量子井戸半導体レーザ |
| JP3453916B2 (ja) | 1995-04-03 | 2003-10-06 | ソニー株式会社 | 半導体レーザ |
| JP2820140B2 (ja) * | 1996-12-13 | 1998-11-05 | 日本電気株式会社 | 窒化ガリウム系半導体レーザ |
| JPH10261838A (ja) | 1997-03-19 | 1998-09-29 | Sharp Corp | 窒化ガリウム系半導体発光素子及び半導体レーザ光源装置 |
| KR100447367B1 (ko) * | 1997-03-07 | 2004-09-08 | 샤프 가부시키가이샤 | 다중 양자 웰 구조 활성층을 갖는 질화갈륨계 반도체 발광 소자 및 반도체 레이저 광원 장치 |
| JP4365898B2 (ja) * | 1997-03-07 | 2009-11-18 | シャープ株式会社 | 窒化ガリウム系半導体レーザ素子、及び半導体レーザ光源装置 |
| JPH11163458A (ja) * | 1997-11-26 | 1999-06-18 | Mitsui Chem Inc | 半導体レーザ装置 |
| JP2000196200A (ja) * | 1998-12-25 | 2000-07-14 | Sanyo Electric Co Ltd | 発光素子 |
| JP3454181B2 (ja) * | 1999-03-23 | 2003-10-06 | 松下電器産業株式会社 | 窒化物半導体素子 |
| JP4075324B2 (ja) * | 2001-05-10 | 2008-04-16 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| EP1437810B1 (en) * | 2001-09-28 | 2007-09-12 | The Furukawa Electric Co., Ltd. | Semiconductor laser element, laser module using it |
| WO2003085790A1 (fr) * | 2002-04-04 | 2003-10-16 | Sharp Kabushiki Kaisha | Dispositif laser a semi-conducteur |
| US7058105B2 (en) * | 2002-10-17 | 2006-06-06 | Samsung Electro-Mechanics Co., Ltd. | Semiconductor optoelectronic device |
| JP2004221428A (ja) * | 2003-01-16 | 2004-08-05 | Toshiba Corp | 光半導体素子およびその製造方法 |
| JP2004253776A (ja) * | 2003-01-31 | 2004-09-09 | Sharp Corp | 半導体レーザ素子及び光学式情報記録装置 |
-
2005
- 2005-09-01 JP JP2005253412A patent/JP2006270028A/ja active Pending
-
2006
- 2006-01-02 TW TW095100042A patent/TWI418106B/zh not_active IP Right Cessation
- 2006-01-06 US US11/326,503 patent/US7756177B2/en active Active
- 2006-02-14 CN CNB200610008808XA patent/CN100539334C/zh not_active Expired - Fee Related
- 2006-02-22 KR KR1020060017047A patent/KR100812319B1/ko not_active Expired - Fee Related
- 2006-11-10 JP JP2006305764A patent/JP2007036298A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| TWI418106B (zh) | 2013-12-01 |
| KR20060094882A (ko) | 2006-08-30 |
| US7756177B2 (en) | 2010-07-13 |
| JP2006270028A (ja) | 2006-10-05 |
| KR100812319B1 (ko) | 2008-03-10 |
| US20060193359A1 (en) | 2006-08-31 |
| TW200637091A (en) | 2006-10-16 |
| CN1825723A (zh) | 2006-08-30 |
| JP2007036298A (ja) | 2007-02-08 |
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