JP2006237270A - 薄膜半導体装置及びその製造方法と表示装置 - Google Patents

薄膜半導体装置及びその製造方法と表示装置 Download PDF

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Publication number
JP2006237270A
JP2006237270A JP2005049716A JP2005049716A JP2006237270A JP 2006237270 A JP2006237270 A JP 2006237270A JP 2005049716 A JP2005049716 A JP 2005049716A JP 2005049716 A JP2005049716 A JP 2005049716A JP 2006237270 A JP2006237270 A JP 2006237270A
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Japan
Prior art keywords
region
thin film
semiconductor thin
boundary
light absorption
Prior art date
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Abandoned
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JP2005049716A
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English (en)
Japanese (ja)
Inventor
Akihiko Asano
明彦 浅野
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Sony Corp
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Sony Corp
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Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2005049716A priority Critical patent/JP2006237270A/ja
Priority to TW095104478A priority patent/TW200633018A/zh
Priority to US11/358,845 priority patent/US20060186415A1/en
Priority to KR1020060017564A priority patent/KR20060094479A/ko
Publication of JP2006237270A publication Critical patent/JP2006237270A/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2005049716A 2005-02-24 2005-02-24 薄膜半導体装置及びその製造方法と表示装置 Abandoned JP2006237270A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2005049716A JP2006237270A (ja) 2005-02-24 2005-02-24 薄膜半導体装置及びその製造方法と表示装置
TW095104478A TW200633018A (en) 2005-02-24 2006-02-10 Thin film semiconductor device, method of manufacturing the same, and display
US11/358,845 US20060186415A1 (en) 2005-02-24 2006-02-21 Thin film semiconductor device, method of manufacturing the same, and display
KR1020060017564A KR20060094479A (ko) 2005-02-24 2006-02-23 박막 반도체 장치 및 그 제조 방법과 표시 장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005049716A JP2006237270A (ja) 2005-02-24 2005-02-24 薄膜半導体装置及びその製造方法と表示装置

Publications (1)

Publication Number Publication Date
JP2006237270A true JP2006237270A (ja) 2006-09-07

Family

ID=36911742

Family Applications (1)

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JP2005049716A Abandoned JP2006237270A (ja) 2005-02-24 2005-02-24 薄膜半導体装置及びその製造方法と表示装置

Country Status (4)

Country Link
US (1) US20060186415A1 (https=)
JP (1) JP2006237270A (https=)
KR (1) KR20060094479A (https=)
TW (1) TW200633018A (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288424A (ja) * 2007-05-18 2008-11-27 Sony Corp 半導体装置の製造方法および半導体装置、薄膜トランジスタ基板の製造方法および薄膜トランジスタ基板、ならびに表示装置の製造方法および表示装置
JP2011054716A (ja) * 2009-09-01 2011-03-17 Ricoh Co Ltd 電気機械変換素子の製造方法、該製造方法により製造した電気機械変換素子、液滴吐出ヘッド及び液滴吐出装置
JP2013070076A (ja) * 2012-11-19 2013-04-18 Sony Corp 半導体装置、薄膜トランジスタ基板および表示装置
KR101560398B1 (ko) 2008-12-08 2015-10-14 엘지디스플레이 주식회사 폴리실리콘 박막트랜지스터의 제조방법
WO2020158464A1 (ja) * 2019-01-29 2020-08-06 株式会社ブイ・テクノロジー レーザアニール方法およびレーザアニール装置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324425A (ja) * 2006-06-02 2007-12-13 Sony Corp 薄膜半導体装置及びその製造方法と表示装置
KR100785020B1 (ko) * 2006-06-09 2007-12-12 삼성전자주식회사 하부 게이트 박막 트랜지스터 및 그 제조방법
KR100785019B1 (ko) * 2006-06-09 2007-12-11 삼성전자주식회사 하부 게이트 박막 트랜지스터 및 그 제조방법
JP2008283069A (ja) * 2007-05-11 2008-11-20 Sony Corp 照射装置、半導体装置の製造装置、半導体装置の製造方法および表示装置の製造方法
KR100953657B1 (ko) * 2007-11-13 2010-04-20 삼성모바일디스플레이주식회사 박막트랜지스터 및 그 제조방법과 이를 구비하는유기전계발광표시장치
KR101015844B1 (ko) * 2008-06-19 2011-02-23 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 구비하는유기전계발광표시장치의 제조방법
JP5534402B2 (ja) * 2009-11-05 2014-07-02 株式会社ブイ・テクノロジー 低温ポリシリコン膜の形成装置及び方法
KR101094285B1 (ko) * 2009-12-04 2011-12-19 삼성모바일디스플레이주식회사 박막트랜지스터 및 이를 포함하는 표시장치
JP6471379B2 (ja) * 2014-11-25 2019-02-20 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
JP2020004859A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
CN111092124A (zh) * 2018-10-23 2020-05-01 宸鸿光电科技股份有限公司 半导体装置及其制造方法
JP7203417B2 (ja) * 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
CN109860057B (zh) * 2019-03-25 2021-12-14 合肥鑫晟光电科技有限公司 薄膜晶体管、阵列基板及其制作方法、显示装置
JP7616771B2 (ja) * 2021-04-06 2025-01-17 東京エレクトロン株式会社 アモルファスシリコン膜の結晶化方法
TWI880562B (zh) * 2023-12-29 2025-04-11 南韓商樂金顯示科技股份有限公司 顯示裝置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3444053B2 (ja) * 1995-10-13 2003-09-08 ソニー株式会社 薄膜半導体装置
TW582062B (en) * 2001-09-14 2004-04-01 Sony Corp Laser irradiation apparatus and method of treating semiconductor thin film
KR100585873B1 (ko) * 2003-11-03 2006-06-07 엘지.필립스 엘시디 주식회사 폴리실리콘 액정표시소자 및 그 제조방법

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008288424A (ja) * 2007-05-18 2008-11-27 Sony Corp 半導体装置の製造方法および半導体装置、薄膜トランジスタ基板の製造方法および薄膜トランジスタ基板、ならびに表示装置の製造方法および表示装置
KR101560398B1 (ko) 2008-12-08 2015-10-14 엘지디스플레이 주식회사 폴리실리콘 박막트랜지스터의 제조방법
JP2011054716A (ja) * 2009-09-01 2011-03-17 Ricoh Co Ltd 電気機械変換素子の製造方法、該製造方法により製造した電気機械変換素子、液滴吐出ヘッド及び液滴吐出装置
JP2013070076A (ja) * 2012-11-19 2013-04-18 Sony Corp 半導体装置、薄膜トランジスタ基板および表示装置
WO2020158464A1 (ja) * 2019-01-29 2020-08-06 株式会社ブイ・テクノロジー レーザアニール方法およびレーザアニール装置
JP2020123600A (ja) * 2019-01-29 2020-08-13 株式会社ブイ・テクノロジー レーザアニール方法およびレーザアニール装置
JP7154592B2 (ja) 2019-01-29 2022-10-18 株式会社ブイ・テクノロジー レーザアニール方法およびレーザアニール装置

Also Published As

Publication number Publication date
TWI296825B (https=) 2008-05-11
US20060186415A1 (en) 2006-08-24
KR20060094479A (ko) 2006-08-29
TW200633018A (en) 2006-09-16

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