TW200633018A - Thin film semiconductor device, method of manufacturing the same, and display - Google Patents

Thin film semiconductor device, method of manufacturing the same, and display

Info

Publication number
TW200633018A
TW200633018A TW095104478A TW95104478A TW200633018A TW 200633018 A TW200633018 A TW 200633018A TW 095104478 A TW095104478 A TW 095104478A TW 95104478 A TW95104478 A TW 95104478A TW 200633018 A TW200633018 A TW 200633018A
Authority
TW
Taiwan
Prior art keywords
thin film
semiconductor thin
internal region
region
produced
Prior art date
Application number
TW095104478A
Other languages
English (en)
Chinese (zh)
Other versions
TWI296825B (https=
Inventor
Akihiko Asano
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of TW200633018A publication Critical patent/TW200633018A/zh
Application granted granted Critical
Publication of TWI296825B publication Critical patent/TWI296825B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0227—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using structural arrangements to control crystal growth, e.g. placement of grain filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3241—Materials thereof being conductive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
TW095104478A 2005-02-24 2006-02-10 Thin film semiconductor device, method of manufacturing the same, and display TW200633018A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005049716A JP2006237270A (ja) 2005-02-24 2005-02-24 薄膜半導体装置及びその製造方法と表示装置

Publications (2)

Publication Number Publication Date
TW200633018A true TW200633018A (en) 2006-09-16
TWI296825B TWI296825B (https=) 2008-05-11

Family

ID=36911742

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095104478A TW200633018A (en) 2005-02-24 2006-02-10 Thin film semiconductor device, method of manufacturing the same, and display

Country Status (4)

Country Link
US (1) US20060186415A1 (https=)
JP (1) JP2006237270A (https=)
KR (1) KR20060094479A (https=)
TW (1) TW200633018A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI880562B (zh) * 2023-12-29 2025-04-11 南韓商樂金顯示科技股份有限公司 顯示裝置

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007324425A (ja) * 2006-06-02 2007-12-13 Sony Corp 薄膜半導体装置及びその製造方法と表示装置
KR100785020B1 (ko) * 2006-06-09 2007-12-12 삼성전자주식회사 하부 게이트 박막 트랜지스터 및 그 제조방법
KR100785019B1 (ko) * 2006-06-09 2007-12-11 삼성전자주식회사 하부 게이트 박막 트랜지스터 및 그 제조방법
JP2008283069A (ja) * 2007-05-11 2008-11-20 Sony Corp 照射装置、半導体装置の製造装置、半導体装置の製造方法および表示装置の製造方法
JP5245287B2 (ja) * 2007-05-18 2013-07-24 ソニー株式会社 半導体装置の製造方法、薄膜トランジスタ基板の製造方法および表示装置の製造方法
KR100953657B1 (ko) * 2007-11-13 2010-04-20 삼성모바일디스플레이주식회사 박막트랜지스터 및 그 제조방법과 이를 구비하는유기전계발광표시장치
KR101015844B1 (ko) * 2008-06-19 2011-02-23 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 구비하는유기전계발광표시장치의 제조방법
KR101560398B1 (ko) 2008-12-08 2015-10-14 엘지디스플레이 주식회사 폴리실리콘 박막트랜지스터의 제조방법
JP5549913B2 (ja) * 2009-09-01 2014-07-16 株式会社リコー 電気機械変換素子の製造方法
JP5534402B2 (ja) * 2009-11-05 2014-07-02 株式会社ブイ・テクノロジー 低温ポリシリコン膜の形成装置及び方法
KR101094285B1 (ko) * 2009-12-04 2011-12-19 삼성모바일디스플레이주식회사 박막트랜지스터 및 이를 포함하는 표시장치
JP5601363B2 (ja) * 2012-11-19 2014-10-08 ソニー株式会社 半導体装置、薄膜トランジスタ基板および表示装置
JP6471379B2 (ja) * 2014-11-25 2019-02-20 株式会社ブイ・テクノロジー 薄膜トランジスタ、薄膜トランジスタの製造方法及びレーザアニール装置
JP2020004859A (ja) * 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
CN111092124A (zh) * 2018-10-23 2020-05-01 宸鸿光电科技股份有限公司 半导体装置及其制造方法
JP7154592B2 (ja) * 2019-01-29 2022-10-18 株式会社ブイ・テクノロジー レーザアニール方法およびレーザアニール装置
JP7203417B2 (ja) * 2019-01-31 2023-01-13 株式会社ブイ・テクノロジー レーザアニール方法、レーザアニール装置、およびｔｆｔ基板
CN109860057B (zh) * 2019-03-25 2021-12-14 合肥鑫晟光电科技有限公司 薄膜晶体管、阵列基板及其制作方法、显示装置
JP7616771B2 (ja) * 2021-04-06 2025-01-17 東京エレクトロン株式会社 アモルファスシリコン膜の結晶化方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3444053B2 (ja) * 1995-10-13 2003-09-08 ソニー株式会社 薄膜半導体装置
TW582062B (en) * 2001-09-14 2004-04-01 Sony Corp Laser irradiation apparatus and method of treating semiconductor thin film
KR100585873B1 (ko) * 2003-11-03 2006-06-07 엘지.필립스 엘시디 주식회사 폴리실리콘 액정표시소자 및 그 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI880562B (zh) * 2023-12-29 2025-04-11 南韓商樂金顯示科技股份有限公司 顯示裝置

Also Published As

Publication number Publication date
TWI296825B (https=) 2008-05-11
US20060186415A1 (en) 2006-08-24
JP2006237270A (ja) 2006-09-07
KR20060094479A (ko) 2006-08-29

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