JP2006229196A - エッチング液と補給液及びこれを用いた導体パターンの形成方法 - Google Patents
エッチング液と補給液及びこれを用いた導体パターンの形成方法 Download PDFInfo
- Publication number
- JP2006229196A JP2006229196A JP2005356551A JP2005356551A JP2006229196A JP 2006229196 A JP2006229196 A JP 2006229196A JP 2005356551 A JP2005356551 A JP 2005356551A JP 2005356551 A JP2005356551 A JP 2005356551A JP 2006229196 A JP2006229196 A JP 2006229196A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- etching solution
- conductor pattern
- copper
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 title claims abstract description 203
- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000004020 conductor Substances 0.000 title claims abstract description 48
- 239000007788 liquid Substances 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 229910018487 Ni—Cr Inorganic materials 0.000 claims abstract description 47
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 46
- 239000000956 alloy Substances 0.000 claims abstract description 46
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 23
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 22
- 150000002500 ions Chemical class 0.000 claims abstract description 11
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- 239000002253 acid Substances 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims description 124
- 150000001875 compounds Chemical class 0.000 claims description 37
- 229910052717 sulfur Inorganic materials 0.000 claims description 29
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical compound C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 claims description 16
- 239000007864 aqueous solution Substances 0.000 claims description 10
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 claims description 9
- 125000004434 sulfur atom Chemical group 0.000 claims description 7
- 125000003277 amino group Chemical group 0.000 claims description 6
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 6
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 6
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 6
- 125000001841 imino group Chemical group [H]N=* 0.000 claims description 6
- 125000000020 sulfo group Chemical group O=S(=O)([*])O[H] 0.000 claims description 6
- 125000004432 carbon atom Chemical group C* 0.000 claims description 5
- 229940005654 nitrite ion Drugs 0.000 claims description 5
- 150000003557 thiazoles Chemical class 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 85
- 229910052802 copper Inorganic materials 0.000 description 75
- 239000010949 copper Substances 0.000 description 75
- 239000010410 layer Substances 0.000 description 60
- 239000000463 material Substances 0.000 description 26
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 22
- 238000004090 dissolution Methods 0.000 description 22
- 239000011593 sulfur Substances 0.000 description 22
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 21
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 19
- 239000010408 film Substances 0.000 description 18
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 16
- 230000000052 comparative effect Effects 0.000 description 16
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 14
- 238000007747 plating Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- 239000011889 copper foil Substances 0.000 description 11
- -1 nitrite ions Chemical class 0.000 description 9
- 238000007654 immersion Methods 0.000 description 8
- DKIDEFUBRARXTE-UHFFFAOYSA-N 3-mercaptopropanoic acid Chemical compound OC(=O)CCS DKIDEFUBRARXTE-UHFFFAOYSA-N 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000003929 acidic solution Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 159000000000 sodium salts Chemical class 0.000 description 3
- YXIWHUQXZSMYRE-UHFFFAOYSA-N 1,3-benzothiazole-2-thiol Chemical compound C1=CC=C2SC(S)=NC2=C1 YXIWHUQXZSMYRE-UHFFFAOYSA-N 0.000 description 2
- PMNLUUOXGOOLSP-UHFFFAOYSA-N 2-mercaptopropanoic acid Chemical compound CC(S)C(O)=O PMNLUUOXGOOLSP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- XUJNEKJLAYXESH-REOHCLBHSA-N L-Cysteine Chemical compound SC[C@H](N)C(O)=O XUJNEKJLAYXESH-REOHCLBHSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 239000002518 antifoaming agent Substances 0.000 description 2
- 229960001716 benzalkonium Drugs 0.000 description 2
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 description 2
- IOJUPLGTWVMSFF-UHFFFAOYSA-N benzothiazole Chemical compound C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 159000000001 potassium salts Chemical class 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 235000010288 sodium nitrite Nutrition 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- LPMBTLLQQJBUOO-KTKRTIGZSA-N (z)-n,n-bis(2-hydroxyethyl)octadec-9-enamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)N(CCO)CCO LPMBTLLQQJBUOO-KTKRTIGZSA-N 0.000 description 1
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- 229940006193 2-mercaptoethanesulfonic acid Drugs 0.000 description 1
- SLAMLWHELXOEJZ-UHFFFAOYSA-N 2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1[N+]([O-])=O SLAMLWHELXOEJZ-UHFFFAOYSA-N 0.000 description 1
- IQUPABOKLQSFBK-UHFFFAOYSA-N 2-nitrophenol Chemical compound OC1=CC=CC=C1[N+]([O-])=O IQUPABOKLQSFBK-UHFFFAOYSA-N 0.000 description 1
- JDGZXSVPVMNXMW-UHFFFAOYSA-N 2-sulfanylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1S JDGZXSVPVMNXMW-UHFFFAOYSA-N 0.000 description 1
- RVBUGGBMJDPOST-UHFFFAOYSA-N 2-thiobarbituric acid Chemical compound O=C1CC(=O)NC(=S)N1 RVBUGGBMJDPOST-UHFFFAOYSA-N 0.000 description 1
- OBDVFOBWBHMJDG-UHFFFAOYSA-N 3-mercapto-1-propanesulfonic acid Chemical compound OS(=O)(=O)CCCS OBDVFOBWBHMJDG-UHFFFAOYSA-N 0.000 description 1
- RYYXDZDBXNUPOG-UHFFFAOYSA-N 4,5,6,7-tetrahydro-1,3-benzothiazole-2,6-diamine;dihydrochloride Chemical compound Cl.Cl.C1C(N)CCC2=C1SC(N)=N2 RYYXDZDBXNUPOG-UHFFFAOYSA-N 0.000 description 1
- HWTDMFJYBAURQR-UHFFFAOYSA-N 80-82-0 Chemical compound OS(=O)(=O)C1=CC=CC=C1[N+]([O-])=O HWTDMFJYBAURQR-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PDQAZBWRQCGBEV-UHFFFAOYSA-N Ethylenethiourea Chemical compound S=C1NCCN1 PDQAZBWRQCGBEV-UHFFFAOYSA-N 0.000 description 1
- 239000004201 L-cysteine Substances 0.000 description 1
- 235000013878 L-cysteine Nutrition 0.000 description 1
- LEVWYRKDKASIDU-IMJSIDKUSA-N L-cystine Chemical compound [O-]C(=O)[C@@H]([NH3+])CSSC[C@H]([NH3+])C([O-])=O LEVWYRKDKASIDU-IMJSIDKUSA-N 0.000 description 1
- VLCDUOXHFNUCKK-UHFFFAOYSA-N N,N'-Dimethylthiourea Chemical compound CNC(=S)NC VLCDUOXHFNUCKK-UHFFFAOYSA-N 0.000 description 1
- FLVIGYVXZHLUHP-UHFFFAOYSA-N N,N'-diethylthiourea Chemical compound CCNC(=S)NCC FLVIGYVXZHLUHP-UHFFFAOYSA-N 0.000 description 1
- AOMUHOFOVNGZAN-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)dodecanamide Chemical compound CCCCCCCCCCCC(=O)N(CCO)CCO AOMUHOFOVNGZAN-UHFFFAOYSA-N 0.000 description 1
- QZXSMBBFBXPQHI-UHFFFAOYSA-N N-(dodecanoyl)ethanolamine Chemical compound CCCCCCCCCCCC(=O)NCCO QZXSMBBFBXPQHI-UHFFFAOYSA-N 0.000 description 1
- OTGQIQQTPXJQRG-UHFFFAOYSA-N N-(octadecanoyl)ethanolamine Chemical compound CCCCCCCCCCCCCCCCCC(=O)NCCO OTGQIQQTPXJQRG-UHFFFAOYSA-N 0.000 description 1
- KQJQICVXLJTWQD-UHFFFAOYSA-N N-Methylthiourea Chemical compound CNC(N)=S KQJQICVXLJTWQD-UHFFFAOYSA-N 0.000 description 1
- XGEGHDBEHXKFPX-UHFFFAOYSA-N N-methylthiourea Natural products CNC(N)=O XGEGHDBEHXKFPX-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- ODUCDPQEXGNKDN-UHFFFAOYSA-N Nitrogen oxide(NO) Natural products O=N ODUCDPQEXGNKDN-UHFFFAOYSA-N 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- AZFNGPAYDKGCRB-XCPIVNJJSA-M [(1s,2s)-2-amino-1,2-diphenylethyl]-(4-methylphenyl)sulfonylazanide;chlororuthenium(1+);1-methyl-4-propan-2-ylbenzene Chemical compound [Ru+]Cl.CC(C)C1=CC=C(C)C=C1.C1=CC(C)=CC=C1S(=O)(=O)[N-][C@@H](C=1C=CC=CC=1)[C@@H](N)C1=CC=CC=C1 AZFNGPAYDKGCRB-XCPIVNJJSA-M 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229960002233 benzalkonium bromide Drugs 0.000 description 1
- 229960000686 benzalkonium chloride Drugs 0.000 description 1
- KHSLHYAUZSPBIU-UHFFFAOYSA-M benzododecinium bromide Chemical compound [Br-].CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 KHSLHYAUZSPBIU-UHFFFAOYSA-M 0.000 description 1
- CADWTSSKOVRVJC-UHFFFAOYSA-N benzyl(dimethyl)azanium;chloride Chemical compound [Cl-].C[NH+](C)CC1=CC=CC=C1 CADWTSSKOVRVJC-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZNEWHQLOPFWXOF-UHFFFAOYSA-N coenzyme M Chemical compound OS(=O)(=O)CCS ZNEWHQLOPFWXOF-UHFFFAOYSA-N 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- 229940031957 lauric acid diethanolamide Drugs 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- IDNHOWMYUQKKTI-UHFFFAOYSA-M lithium nitrite Chemical compound [Li+].[O-]N=O IDNHOWMYUQKKTI-UHFFFAOYSA-M 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- XGZOMURMPLSSKQ-UHFFFAOYSA-N n,n-bis(2-hydroxyethyl)octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(=O)N(CCO)CCO XGZOMURMPLSSKQ-UHFFFAOYSA-N 0.000 description 1
- VBEGHXKAFSLLGE-UHFFFAOYSA-N n-phenylnitramide Chemical compound [O-][N+](=O)NC1=CC=CC=C1 VBEGHXKAFSLLGE-UHFFFAOYSA-N 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- BOWVQLFMWHZBEF-KTKRTIGZSA-N oleoyl ethanolamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)NCCO BOWVQLFMWHZBEF-KTKRTIGZSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 235000010289 potassium nitrite Nutrition 0.000 description 1
- 239000004304 potassium nitrite Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- FDDDEECHVMSUSB-UHFFFAOYSA-N sulfanilamide Chemical compound NC1=CC=C(S(N)(=O)=O)C=C1 FDDDEECHVMSUSB-UHFFFAOYSA-N 0.000 description 1
- 229940124530 sulfonamide Drugs 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 description 1
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 1
- 229940103494 thiosalicylic acid Drugs 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
【解決手段】本発明のエッチング液は、Ni、Cr、Ni−Cr合金及びPdから選ばれる少なくとも一つの金属をエッチングするエッチング液であって、NO、N2O、NO2、N2O3及びこれらのイオンから選ばれる少なくとも一の成分と、酸成分とを含む水溶液である。本発明の導体パターン(1)の形成方法は、Ni、Cr、Ni−Cr合金及びPdから選ばれる少なくとも一つの金属を、前記エッチング液によりエッチングして導体パターン(1)を形成する。
【選択図】図2
Description
NO、N2O、NO2、N2O3及びこれらのイオンから選ばれる少なくとも一の成分と、酸成分とを含む水溶液であることを特徴とする。
NO、N2O、NO2、N2O3及びこれらのイオンから選ばれる少なくとも一の成分を含む水溶液であることを特徴とする。
アミノ基、イミノ基、カルボキシル基、カルボニル基、スルホ基及び水酸基から選ばれる少なくとも一種の基と、硫黄原子とを有し、かつ炭素原子数が7以下である化合物を含むことを特徴とする。
チアゾール及びチアゾール系化合物から選ばれる少なくとも一種を含むことを特徴とする。
前記金属を、上述した本発明のエッチング液を用いてエッチングすることを特徴とする。
表1に示す成分を混合して、実施例1〜8のエッチング液を調製した。また、表2に示す成分を混合して、比較例1〜3のエッチング液を調製した。なお、実施例5及び8のエッチング液は、酸化窒素(NO)以外の成分を混合した後、この混合溶液1kgに対し3リットルのNOガスを吹き込んで調製した。
ポリイミドフィルム上にスパッタリング法によってNi−Cr合金膜が形成された被処理材を用意した。この被処理材は、ポリイミドフィルム及びNi−Cr合金膜の厚みが、それぞれ50μm及び0.1μmで、Ni−Cr合金膜におけるNiとCrとの原子比(Ni/Cr)が、88/12であった。そして、この被処理材を、表1及び表2に示される各エッチング液(40℃)中に浸漬し、蛍光X線分析装置による測定でポリイミドフィルム表面のNi及びCrが検出されなくなる時間(Ni−Cr合金の溶解時間)を測定した。結果を表1及び表2に示す。また、参照データとして、縦40mm、横40mm、厚さ35μm、重さ0.50gの銅箔を、表1及び表2に示される各エッチング液(40℃)中に前記溶解時間と同じ時間だけ浸漬し、浸漬前後の重量変化により銅の溶解量を調べた。結果を表1及び表2の括弧内に示す。
エポキシ樹脂含浸ガラス布基材上に無電解めっき触媒(Pd)が付与された被処理材を用意した。この被処理材には、基材1m2あたり20mgのPdが付着していた。そして、この被処理材を、表1及び表2に示される各エッチング液(40℃)中に浸漬し、X線光電子分光法(ESCA)による測定で基材表面のPdが検出されなくなる時間(Pdの溶解時間)を測定した。結果を表1及び表2に示す。また、参照データとして、縦40mm、横40mm、厚さ35μm、重さ0.50gの銅箔を、表1及び表2に示される各エッチング液(40℃)中に前記溶解時間と同じ時間だけ浸漬し、浸漬前後の重量変化により銅の溶解量を調べた。結果を表1及び表2の括弧内に示す。
更に、エッチング液中のチアゾールの影響を観察するために以下の実験を行った。
更に、エッチング液中のβ-メルカプトプロピオン酸の影響を観察するために以下の実験を行った。
次に、本発明の導体パターンの形成方法の実施例について、比較例と併せて説明する。なお、本発明は下記の実施例に限定されるものではない。
10 電気絶縁性基材
11 下地層
12 銅層
13 エッチングレジスト
H 銅層の高さ
W1 銅層の頂部の幅
W2 銅層の基部の幅
Claims (11)
- Ni、Cr、Ni−Cr合金及びPdから選ばれる少なくとも一つの金属をエッチングするエッチング液であって、
NO、N2O、NO2、N2O3及びこれらのイオンから選ばれる少なくとも一の成分と、酸成分とを含む水溶液であることを特徴とするエッチング液。 - 前記NO、N2O、NO2、N2O3及びこれらのイオンから選ばれる少なくとも一の成分の濃度は、0.0001〜10質量%である請求項1に記載のエッチング液。
- 前記NO、N2O、NO2、N2O3及びこれらのイオンから選ばれる少なくとも一の成分は、亜硝酸イオンである請求項1又は2に記載のエッチング液。
- アミノ基、イミノ基、カルボキシル基、カルボニル基、スルホ基及び水酸基から選ばれる少なくとも一種の基と、硫黄原子とを有し、かつ炭素原子数が7以下である化合物を更に含む請求項1〜3のいずれか1項に記載のエッチング液。
- チアゾール及びチアゾール系化合物から選ばれる少なくとも一種を更に含む請求項1〜3のいずれか1項に記載のエッチング液。
- 請求項1〜5のいずれか1項に記載のエッチング液を繰り返し使用する際に、前記エッチング液に添加する補給液であって、
NO、N2O、NO2、N2O3及びこれらのイオンから選ばれる少なくとも一の成分を含む水溶液であることを特徴とする補給液。 - 前記NO、N2O、NO2、N2O3及びこれらのイオンから選ばれる少なくとも一の成分は、亜硝酸イオンである請求項6に記載の補給液。
- 請求項4に記載のエッチング液を繰り返し使用する際に、前記エッチング液に添加する補給液であって、
アミノ基、イミノ基、カルボキシル基、カルボニル基、スルホ基及び水酸基から選ばれる少なくとも一種の基と、硫黄原子とを有し、かつ炭素原子数が7以下である化合物を含むことを特徴とする補給液。 - 請求項5に記載のエッチング液を繰り返し使用する際に、前記エッチング液に添加する補給液であって、
チアゾール及びチアゾール系化合物から選ばれる少なくとも一種を含むことを特徴とする補給液。 - Ni、Cr、Ni−Cr合金及びPdから選ばれる少なくとも一つの金属をエッチングして導体パターンを形成する導体パターンの形成方法であって、
前記金属を、請求項1〜5のいずれか1項に記載のエッチング液を用いてエッチングすることを特徴とする導体パターンの形成方法。 - 前記エッチング液を繰り返し使用する際に、請求項6〜9のいずれか1項に記載の補給液を前記エッチング液に添加して、前記エッチング液による前記金属のエッチング速度を所定の速度以上に維持しながら前記金属をエッチングする請求項10に記載の導体パターンの形成方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005356551A JP4580331B2 (ja) | 2005-01-20 | 2005-12-09 | エッチング液と補給液及びこれを用いた導体パターンの形成方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005013007 | 2005-01-20 | ||
JP2005356551A JP4580331B2 (ja) | 2005-01-20 | 2005-12-09 | エッチング液と補給液及びこれを用いた導体パターンの形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006229196A true JP2006229196A (ja) | 2006-08-31 |
JP4580331B2 JP4580331B2 (ja) | 2010-11-10 |
Family
ID=36919367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005356551A Active JP4580331B2 (ja) | 2005-01-20 | 2005-12-09 | エッチング液と補給液及びこれを用いた導体パターンの形成方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4580331B2 (ja) |
KR (1) | KR100927068B1 (ja) |
CN (1) | CN1819748B (ja) |
TW (1) | TW200626750A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008106354A (ja) * | 2006-09-25 | 2008-05-08 | Mec Kk | 金属除去液及びこれを用いた金属除去方法 |
US8570240B2 (en) | 2008-06-27 | 2013-10-29 | Teijin Fibers Limited | Communication sheet structure |
KR20240076723A (ko) | 2022-11-22 | 2024-05-30 | 멕크 가부시키가이샤 | 에칭액 세트, 에칭 방법 및 도체 패턴의 형성 방법 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101243847B1 (ko) * | 2011-08-18 | 2013-03-20 | 주식회사 이엔에프테크놀로지 | 식각액의 식각 용량이 증대된 구리/몰리브데늄 합금막의 식각 방법 |
CN103107085B (zh) * | 2013-01-31 | 2016-02-10 | 电子科技大学 | 一种NiCr薄膜的干法刻蚀工艺 |
KR101324678B1 (ko) * | 2013-06-20 | 2013-11-04 | 주식회사 에이씨엠 | 금속 할로겐 화합물을 포함하는 시드 에칭제 |
KR101475892B1 (ko) * | 2013-07-29 | 2014-12-23 | 주식회사 에이씨엠 | 고 종횡비의 배선 형성을 위한 시드 에칭제 |
CN106245030A (zh) * | 2016-09-14 | 2016-12-21 | 佛山科学技术学院 | 一种钯镍合金镀层退镀的化学退镀液及退镀方法 |
CN111334298B (zh) * | 2020-02-26 | 2021-10-01 | 江阴润玛电子材料股份有限公司 | 一种钼铝钼和ITO/Ag/ITO兼容蚀刻液及制备方法 |
CN112064028B (zh) * | 2020-09-14 | 2022-09-16 | 深圳市志凌伟业光电有限公司 | 复合铜膜结构用蚀刻药水 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1091084A (ja) * | 1996-09-12 | 1998-04-10 | Asahi Glass Co Ltd | 透明導電膜のパターニング方法と透明電極付き基体 |
JP2001140084A (ja) * | 1999-08-27 | 2001-05-22 | Mec Kk | ニッケルまたはニッケル合金のエッチング液 |
JP2001164373A (ja) * | 1999-12-07 | 2001-06-19 | Sumitomo Osaka Cement Co Ltd | 貴金属系触媒除去液 |
JP2004190054A (ja) * | 2002-12-06 | 2004-07-08 | Mec Kk | エッチング液 |
JP2005350708A (ja) * | 2004-06-09 | 2005-12-22 | Okuno Chem Ind Co Ltd | エッチング処理用組成物 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6117795A (en) * | 1998-02-12 | 2000-09-12 | Lsi Logic Corporation | Use of corrosion inhibiting compounds in post-etch cleaning processes of an integrated circuit |
KR100319161B1 (ko) * | 2000-02-15 | 2001-12-29 | 한의섭 | 크롬 금속막의 선택적 에칭 용액 |
JP2003155586A (ja) | 2001-11-16 | 2003-05-30 | Sumitomo Chem Co Ltd | 電子部品用洗浄液 |
JP2004277576A (ja) | 2003-03-17 | 2004-10-07 | Daikin Ind Ltd | エッチング用又は洗浄用の溶液の製造法 |
-
2005
- 2005-12-09 JP JP2005356551A patent/JP4580331B2/ja active Active
- 2005-12-21 TW TW094145507A patent/TW200626750A/zh not_active IP Right Cessation
-
2006
- 2006-01-19 KR KR1020060005949A patent/KR100927068B1/ko active IP Right Grant
- 2006-01-20 CN CN2006100064386A patent/CN1819748B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1091084A (ja) * | 1996-09-12 | 1998-04-10 | Asahi Glass Co Ltd | 透明導電膜のパターニング方法と透明電極付き基体 |
JP2001140084A (ja) * | 1999-08-27 | 2001-05-22 | Mec Kk | ニッケルまたはニッケル合金のエッチング液 |
JP2001164373A (ja) * | 1999-12-07 | 2001-06-19 | Sumitomo Osaka Cement Co Ltd | 貴金属系触媒除去液 |
JP2004190054A (ja) * | 2002-12-06 | 2004-07-08 | Mec Kk | エッチング液 |
JP2005350708A (ja) * | 2004-06-09 | 2005-12-22 | Okuno Chem Ind Co Ltd | エッチング処理用組成物 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008106354A (ja) * | 2006-09-25 | 2008-05-08 | Mec Kk | 金属除去液及びこれを用いた金属除去方法 |
US8570240B2 (en) | 2008-06-27 | 2013-10-29 | Teijin Fibers Limited | Communication sheet structure |
JP5432139B2 (ja) * | 2008-06-27 | 2014-03-05 | 帝人株式会社 | 通信用シート構造体 |
KR20240076723A (ko) | 2022-11-22 | 2024-05-30 | 멕크 가부시키가이샤 | 에칭액 세트, 에칭 방법 및 도체 패턴의 형성 방법 |
Also Published As
Publication number | Publication date |
---|---|
JP4580331B2 (ja) | 2010-11-10 |
TW200626750A (en) | 2006-08-01 |
TWI379924B (ja) | 2012-12-21 |
KR100927068B1 (ko) | 2009-11-13 |
KR20060084809A (ko) | 2006-07-25 |
CN1819748A (zh) | 2006-08-16 |
CN1819748B (zh) | 2012-11-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4580331B2 (ja) | エッチング液と補給液及びこれを用いた導体パターンの形成方法 | |
US20050109734A1 (en) | Etchant and replenishment solution therefor, and etching method and method for producing wiring board using the | |
US4687545A (en) | Process for stripping tin or tin-lead alloy from copper | |
US20160348246A1 (en) | Pre-treatment process for electroless plating | |
JP2001140084A (ja) | ニッケルまたはニッケル合金のエッチング液 | |
TWI745603B (zh) | 銅蝕刻液 | |
JPS63183445A (ja) | 水溶性レジストフイルム用剥離剤 | |
JP4241018B2 (ja) | エッチング液 | |
US4957653A (en) | Composition containing alkane sulfonic acid and ferric nitrate for stripping tin or tin-lead alloy from copper surfaces, and method for stripping tin or tin-lead alloy | |
JP2008106354A (ja) | 金属除去液及びこれを用いた金属除去方法 | |
JP2006199987A (ja) | エッチング液及びエッチング方法 | |
JP2005187945A (ja) | 銅および銅合金用のマイクロエッチング剤 | |
TWI460311B (zh) | 用於撓性配線基板之鎳-鉻合金剝離劑 | |
JP4429141B2 (ja) | エッチング液セット、これを用いるエッチング方法及び配線基板の製造方法 | |
JPWO2008111389A1 (ja) | エッチング液及びエッチング方法 | |
KR101298766B1 (ko) | 니켈, 크롬, 니켈-크롬 합금의 에칭 용액 조성물 및 이를 이용한 에칭 방법 | |
JP4418916B2 (ja) | エッチング処理用組成物 | |
JP2011166028A (ja) | Cof基板の製造方法 | |
JP4632038B2 (ja) | 銅配線基板製造方法 | |
JP2005105411A (ja) | 銅エッチング液及びエッチング方法 | |
JP4431860B2 (ja) | 銅および銅合金の表面処理剤 | |
JP4395148B2 (ja) | レジスト剥離剤 | |
JP2004003005A (ja) | エッチング液及びエッチング方法 | |
JP4113846B2 (ja) | 樹脂表面に付着した金属析出触媒の除去液および除去方法ならびにこれを用いたプリント配線板の製造方法 | |
JP3281436B2 (ja) | 水溶性レジストの剥離方法及び剥離液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20071030 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100309 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100427 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20100824 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20100827 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130903 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4580331 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |