TW200626750A - Etching liquid, refilling liquid, and forming method of conductor pattern using it - Google Patents

Etching liquid, refilling liquid, and forming method of conductor pattern using it

Info

Publication number
TW200626750A
TW200626750A TW094145507A TW94145507A TW200626750A TW 200626750 A TW200626750 A TW 200626750A TW 094145507 A TW094145507 A TW 094145507A TW 94145507 A TW94145507 A TW 94145507A TW 200626750 A TW200626750 A TW 200626750A
Authority
TW
Taiwan
Prior art keywords
liquid
conductor pattern
forming method
etching
refilling
Prior art date
Application number
TW094145507A
Other languages
Chinese (zh)
Other versions
TWI379924B (en
Inventor
Masayo Kurita
Daisaku Akiyama
Original Assignee
Mec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mec Co Ltd filed Critical Mec Co Ltd
Publication of TW200626750A publication Critical patent/TW200626750A/en
Application granted granted Critical
Publication of TWI379924B publication Critical patent/TWI379924B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/28—Acidic compositions for etching iron group metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

The present invention is to provide an etching liquid and refilling liquid which can promptly etch at least one metal chosen from Ni, Cr, Ni-Cr alloy, and Pd, and a forming method of conductor pattern using it. The etching liquid or a solution of water, which contains at least one component chosen from NO, N2O, NO2, N2O3 and these ions, and an acid component, etches at least one metal chosen from Ni, Cr, Ni-Cr ally and Pd. The forming method of a conductor pattern forms the conductor pattern (1) by etching at least one metal chosen from Ni, Cr, Ni-Cr alloy and Pd with the liquid.
TW094145507A 2005-01-20 2005-12-21 Etching liquid, refilling liquid, and forming method of conductor pattern using it TW200626750A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005013007 2005-01-20

Publications (2)

Publication Number Publication Date
TW200626750A true TW200626750A (en) 2006-08-01
TWI379924B TWI379924B (en) 2012-12-21

Family

ID=36919367

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094145507A TW200626750A (en) 2005-01-20 2005-12-21 Etching liquid, refilling liquid, and forming method of conductor pattern using it

Country Status (4)

Country Link
JP (1) JP4580331B2 (en)
KR (1) KR100927068B1 (en)
CN (1) CN1819748B (en)
TW (1) TW200626750A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008106354A (en) * 2006-09-25 2008-05-08 Mec Kk Metal removing solution and metal removing method using the same
CN102067469A (en) 2008-06-27 2011-05-18 帝人纤维株式会社 Sheet structure for communication
KR101243847B1 (en) * 2011-08-18 2013-03-20 주식회사 이엔에프테크놀로지 Method for etching cu/mo alloy film with etching capacity of etching solution improved
CN103107085B (en) * 2013-01-31 2016-02-10 电子科技大学 A kind of dry etch process of NiCr film
KR101324678B1 (en) * 2013-06-20 2013-11-04 주식회사 에이씨엠 Seed etchant comprising metal halogen compounds
KR101475892B1 (en) * 2013-07-29 2014-12-23 주식회사 에이씨엠 Seed Etchant for Wiring with High Aspect Ratio
CN106245030A (en) * 2016-09-14 2016-12-21 佛山科学技术学院 The chemical decoating liquid of a kind of palladium-nickel alloy coating strip and strip method
CN111334298B (en) * 2020-02-26 2021-10-01 江阴润玛电子材料股份有限公司 Molybdenum-aluminum-molybdenum and ITO/Ag/ITO compatible etching solution and preparation method thereof
CN112064028B (en) * 2020-09-14 2022-09-16 深圳市志凌伟业光电有限公司 Etching liquid for composite copper film structure
JP2024075182A (en) 2022-11-22 2024-06-03 メック株式会社 Etching solution set, etching method, and method for forming conductive pattern

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3711650B2 (en) * 1996-09-12 2005-11-02 旭硝子株式会社 Patterning method for transparent conductive film and substrate with transparent electrode
US6117795A (en) * 1998-02-12 2000-09-12 Lsi Logic Corporation Use of corrosion inhibiting compounds in post-etch cleaning processes of an integrated circuit
JP2001140084A (en) * 1999-08-27 2001-05-22 Mec Kk Etching solution for nickel or nickel alloy
JP3454765B2 (en) * 1999-12-07 2003-10-06 住友大阪セメント株式会社 Precious metal catalyst removal solution
KR100319161B1 (en) * 2000-02-15 2001-12-29 한의섭 Selective etching solution for chromium metal layer
JP2003155586A (en) 2001-11-16 2003-05-30 Sumitomo Chem Co Ltd Cleaning solution for electronic part
JP4241018B2 (en) * 2002-12-06 2009-03-18 メック株式会社 Etching solution
JP2004277576A (en) 2003-03-17 2004-10-07 Daikin Ind Ltd Method for preparing solution for etching or cleaning
JP4418916B2 (en) * 2004-06-09 2010-02-24 奥野製薬工業株式会社 Etching composition

Also Published As

Publication number Publication date
CN1819748A (en) 2006-08-16
KR100927068B1 (en) 2009-11-13
TWI379924B (en) 2012-12-21
KR20060084809A (en) 2006-07-25
JP2006229196A (en) 2006-08-31
JP4580331B2 (en) 2010-11-10
CN1819748B (en) 2012-11-14

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