TW200801855A - Stripper composition for photoresist - Google Patents

Stripper composition for photoresist

Info

Publication number
TW200801855A
TW200801855A TW96118832A TW96118832A TW200801855A TW 200801855 A TW200801855 A TW 200801855A TW 96118832 A TW96118832 A TW 96118832A TW 96118832 A TW96118832 A TW 96118832A TW 200801855 A TW200801855 A TW 200801855A
Authority
TW
Taiwan
Prior art keywords
photoresist
stripper composition
film
stripping
insulating film
Prior art date
Application number
TW96118832A
Other languages
Chinese (zh)
Other versions
TWI362571B (en
Inventor
Hee Han
Min-Choon Park
Kyung-Jun Kim
Sung-Woo Seo
Hyok-Joon Kwon
Kyoung-Ho Ahn
Byung-Kyu Choi
Sung-Joon Min
Ji-Young Hwang
Original Assignee
Lg Chemical Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lg Chemical Ltd filed Critical Lg Chemical Ltd
Publication of TW200801855A publication Critical patent/TW200801855A/en
Application granted granted Critical
Publication of TWI362571B publication Critical patent/TWI362571B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a photoresist stripper composition. During a lift-off process as well as a known process of stripping a photoresist, the photoresist stripper composition is capable of completely stripping a photoresist film denatured due to an excessive photolithography process at low temperatures within a short period, does not damage a conductive film or an insulating film at a lower part of the photoresist even if rinsing is performed by only using water and not isopropanol, which is an intermediate rinsing solution, and has an excellent corrosion inhibiting ability to the conductive metal film or the insulating film at the lower part of the photoresist.
TW96118832A 2006-05-26 2007-05-25 Stripper composition for photoresist TWI362571B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20060047668 2006-05-26

Publications (2)

Publication Number Publication Date
TW200801855A true TW200801855A (en) 2008-01-01
TWI362571B TWI362571B (en) 2012-04-21

Family

ID=38778797

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96118832A TWI362571B (en) 2006-05-26 2007-05-25 Stripper composition for photoresist

Country Status (5)

Country Link
JP (1) JP4773562B2 (en)
KR (2) KR20070114038A (en)
CN (1) CN101454872B (en)
TW (1) TWI362571B (en)
WO (1) WO2007139315A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416595B (en) * 2008-09-15 2013-11-21 Taiwan Semiconductor Mfg Methods of making semiconductor devices
TWI467349B (en) * 2008-11-19 2015-01-01 Toagosei Co Ltd Manufacturing method of substrates having patterned film object of conductive polymer and substrates having patterned film object of conductive polymer

Families Citing this family (28)

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KR101141987B1 (en) * 2008-08-20 2012-05-17 엔엘티 테크놀로지 가부시키가이샤 Chemical liquid for dissolution modification and dissolution modification processesing method
WO2010073887A1 (en) * 2008-12-25 2010-07-01 ナガセケムテックス株式会社 Photoresist remover composition, method for removing photoresist of multilayer metal circuit board, and method for producing multilayer metal circuit board
WO2010118916A1 (en) 2009-04-16 2010-10-21 Basf Se Organic photoresist stripper composition
JP5279921B2 (en) * 2009-11-26 2013-09-04 エルジー・ケム・リミテッド Photoresist stripper composition and photoresist stripping method using the same
TWI405053B (en) * 2009-11-27 2013-08-11 Lg Chemical Ltd Stripper composition for photoresist and method for stripping photoresist
KR101169332B1 (en) * 2010-05-12 2012-07-30 주식회사 이엔에프테크놀로지 Photoresist stripper composition
KR101721262B1 (en) * 2010-09-01 2017-03-29 동우 화인켐 주식회사 Resist stripper composition and a method of stripping resist using the same
CN102012645A (en) * 2010-12-24 2011-04-13 东莞市智高化学原料有限公司 Photoresist stripping solution
CN102436153B (en) * 2011-10-28 2013-06-19 绍兴文理学院 Photosensitive rubber stripping agent for printing screen and stripping method
KR101880308B1 (en) * 2012-05-24 2018-07-19 동우 화인켐 주식회사 A photoresist stripper composition for manufacturing of thin film transistor and method for manufacturing of thin film transistor using the same
JP6144468B2 (en) * 2012-08-22 2017-06-07 富士フイルム株式会社 Resist stripping method and semiconductor substrate product manufacturing method
KR101946379B1 (en) * 2012-11-20 2019-02-11 주식회사 동진쎄미켐 Composition for photoresist stripping solution and stripping method of photoresist using the same
KR101668063B1 (en) * 2013-05-07 2016-10-20 주식회사 엘지화학 Stripper composition for removing photoresist and stripping mthod of photoresist using the same
US10036089B2 (en) * 2013-06-26 2018-07-31 Applied Materials, Inc. Methods of depositing a metal alloy film
EP3060642B1 (en) 2013-10-21 2019-11-06 FujiFilm Electronic Materials USA, Inc. Cleaning formulations for removing residues on surfaces
JP5977727B2 (en) * 2013-11-13 2016-08-24 東京エレクトロン株式会社 Substrate cleaning method, substrate cleaning system, and storage medium
JP6494627B2 (en) 2013-12-06 2019-04-03 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド Formulation for cleaning to remove residues on the surface
KR101586453B1 (en) * 2014-08-20 2016-01-21 주식회사 엘지화학 Stripper composition for removing photoresist and stripping method of photoresist using the same
KR101710170B1 (en) * 2014-08-20 2017-02-27 주식회사 엘지화학 Recycling process of waste stripper for photoresist
CN108535971B (en) * 2017-03-03 2023-09-12 易案爱富科技有限公司 Stripping liquid composition for removing photoresist
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
GB2568516A (en) * 2017-11-17 2019-05-22 Flexenable Ltd Organic semiconductor devices
CN111902379B (en) 2018-03-28 2023-02-17 富士胶片电子材料美国有限公司 Cleaning composition
TWI646222B (en) * 2018-04-25 2019-01-01 達興材料股份有限公司 Etching liquid composition for etching a multilayer film containing a copper or copper alloy layer and a molybdenum or molybdenum alloy layer, an etching method using the etching liquid composition, and a method for manufacturing a display device or an IGZO-containing semiconductor using the etching method
CN111223756B (en) * 2018-11-26 2022-03-29 长鑫存储技术有限公司 Wafer cleaning method and semiconductor device manufacturing method
CN111487845A (en) * 2019-01-29 2020-08-04 山东浪潮华光光电子股份有限公司 Method for manufacturing L ED die electrode mask pattern capable of being directly stripped
JP6688978B1 (en) * 2019-03-25 2020-04-28 パナソニックＩｐマネジメント株式会社 Resist stripper
CN111880384B (en) * 2020-08-10 2022-03-29 深圳市创智成功科技有限公司 Environment-friendly degumming agent for removing photoresist on surface of wafer

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP3773227B2 (en) * 1997-10-16 2006-05-10 東京応化工業株式会社 Resist stripping composition and resist stripping method using the same
US7135445B2 (en) * 2001-12-04 2006-11-14 Ekc Technology, Inc. Process for the use of bis-choline and tris-choline in the cleaning of quartz-coated polysilicon and other materials
JP2003177556A (en) * 2001-12-12 2003-06-27 Sharp Corp Photoresist stripper composition and removing method
JP3738992B2 (en) * 2001-12-27 2006-01-25 東京応化工業株式会社 Photoresist stripping solution
KR101017738B1 (en) * 2002-03-12 2011-02-28 미츠비시 가스 가가쿠 가부시키가이샤 Photoresist stripping composition and cleaning composition
KR100544889B1 (en) * 2003-05-15 2006-01-24 주식회사 엘지화학 Photoresist stripper composition
US6951710B2 (en) * 2003-05-23 2005-10-04 Air Products And Chemicals, Inc. Compositions suitable for removing photoresist, photoresist byproducts and etching residue, and use thereof
JP4056442B2 (en) * 2003-08-20 2008-03-05 株式会社オリンピア Bullet ball machine
KR20050110955A (en) * 2004-05-20 2005-11-24 금호석유화학 주식회사 Stripper composition for photoresist and using method thereof
JP2006106616A (en) * 2004-10-08 2006-04-20 Tokyo Ohka Kogyo Co Ltd Treating liquid for removing photoresist and substrate treatment method
US20060094612A1 (en) * 2004-11-04 2006-05-04 Mayumi Kimura Post etch cleaning composition for use with substrates having aluminum

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI416595B (en) * 2008-09-15 2013-11-21 Taiwan Semiconductor Mfg Methods of making semiconductor devices
TWI467349B (en) * 2008-11-19 2015-01-01 Toagosei Co Ltd Manufacturing method of substrates having patterned film object of conductive polymer and substrates having patterned film object of conductive polymer

Also Published As

Publication number Publication date
KR100913048B1 (en) 2009-08-25
KR20070114038A (en) 2007-11-29
TWI362571B (en) 2012-04-21
CN101454872A (en) 2009-06-10
WO2007139315A1 (en) 2007-12-06
JP2009538456A (en) 2009-11-05
JP4773562B2 (en) 2011-09-14
CN101454872B (en) 2011-04-06
KR20070114037A (en) 2007-11-29

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