KR101141987B1 - Chemical liquid for dissolution modification and dissolution modification processesing method - Google Patents

Abstract

An object of the present invention is to provide a solution for dissolution deformation that can be subjected to a uniform solution for dissolution deformation of an organic film pattern. The present invention is a chemical liquid for use in the dissolution deformation treatment of an organic film pattern, and is a chemical solution for dissolution deformation containing at least one of amides and nitriles. Moreover, this invention is a chemical | medical solution for dissolution deformation containing at least a nitrogen containing alkali component and a solvent for dissolution deformation | transformation as a chemical liquid used for the dissolution deformation process of an organic film pattern.

Melt strain treatment, melt strain chemicals, organic film pattern, reflow treatment, reflow solvent

Description

Chemical Solution for Dissolution Modification and Dissolution Deformation Processing Method {CHEMICAL LIQUID FOR DISSOLUTION MODIFICATION AND DISSOLUTION MODIFICATION PROCESSESING METHOD}

The present invention relates to a solution for dissolution modification and a method for treating dissolution deformation. In particular, it is related with the chemical liquid for dissolution deformation of the organic film pattern formed on the board | substrate, and a dissolution deformation processing method.

Conventionally, after forming an organic film pattern on a semiconductor wafer, an LCD (Liquid Crystal Display) substrate, or other substrate, a wiring circuit or the like is formed by patterning the underlying film, that is, the substrate, by etching using the organic film pattern as a mask. There is a technique to form. In addition, after a base film process, an organic film pattern is removed by peeling process.

For example, as shown in patent documents 1, 2, and 3, after processing an underlayer, an organic membrane pattern is formed, an underlayer is processed again using the organic membrane pattern after deformation as a mask, and an organic membrane pattern after that There is also a technique to remove.

More specifically, in the methods described in Patent Literatures 1, 2 and 3, first, the dissolution deformation treatment to deform by dissolving the organic film pattern is performed as the main treatment. Thereafter, the underlayer is processed again using the deformed organic film pattern as a mask, after which the organic film pattern is removed.

In addition, the process which melt-dissolves an organic film pattern is a process which reflows an organic film pattern. Therefore, melt deformation processing is also called melt deformation reflow processing, melt reflow processing, or simply reflow processing.

The dissolution deformation treatment is basically performed by exposing the substrate to a gas atmosphere. Therefore, it is also called gas atmosphere process.

Moreover, in order to stabilize melt | dissolution deformation process, the temperature adjustment process (mainly cooling) which adjusts a board | substrate temperature to an appropriate process temperature in advance is generally performed. Moreover, heat processing is also generally performed in order to bake the organic film pattern after a dissolution deformation process.

In the conventional dissolution deformation treatment (or gas atmosphere treatment), for example, alcohols (R-OH), alkoxyalcohols, ethers (ROR, Ar-OR, Ar-O-Ar), esters, ketones, glycols And organic solvents such as alkylene glycols and glycol ethers (R represents an alkyl group or a substituted alkyl group, and Ar represents an aromatic ring other than a phenyl group or a phenyl group). Dissolution deformation processing is performed by exposing a board | substrate to the gas atmosphere which vaporized the solution containing these organic solvents. More specifically, it performs by exposing a board | substrate to the vapor evaporated by heating or the vapor by bubbling using an inert gas. In the dissolution deformation treatment, the organic film pattern dissolves as the solvent penetrates into the organic film pattern, causing liquefaction and fluidization.

Patent Document 1: Japanese Patent Application Laid-Open No. 2002-334830

Patent Document 2: Japanese Patent Application Laid-Open No. 2005-159292

Patent Document 3: Japanese Patent Application Laid-Open No. 2005-159342

By the way, in the dissolution deformation | transformation process of an organic film pattern, the deformation | transformation to 5-20 micrometers can be produced normally, and deformation of 100 micrometers or more is also possible in some cases. However, since the deformation amount is large, when melt deformation (reflow) is nonuniform, it may become difficult to deform | transform with favorable precision into the shape made into the objective of an organic film pattern. For this reason, when a certain degree of precision is required for the shape of the organic film pattern after reflow, it is necessary to perform reflow more uniformly.

In the case where the organic film pattern is used for the reduction of the photolithography step, a resist separated into two source / drains, particularly in the vicinity of the channel part, of the organic film pattern (in this case, the resist pattern) for the source-drain formation mask of the channel part. The dissolution deformation | transformation process is used for the process which deform | transforms a pattern into the target shape and connects it with each other. However, in order to ensure the connection of the resist pattern, it is better to increase the amount of deformation due to the dissolution deformation treatment, but there is a problem that the source and drain resist patterns such as wiring portions other than the channel portion are also dissolved and deformed greatly. In order to avoid this problem, it was necessary to take countermeasures such as forming the thickness of the resist film in two stages or removing the thinner one of the resist patterns in the two stages before the dissolution deformation treatment. However, even in this case, in the melt deformation process, only control in one direction in which the area is enlarged can be performed. Therefore, it is necessary to control the deformation with good precision by precisely controlling the processing time so that the area is not enlarged more than necessary. .

In addition, a wet layer is formed on the surface layer of the organic film pattern by a wet etching process. As a wet etching process, when the base layer of an organic film pattern is Al film | membrane, the mixed chemical liquid of phosphoric acid, nitric acid, acetic acid, etc. are used, for example. Regarding the organic film pattern in which the deteriorated layer is present, even if dissolution deformation treatment is performed with a conventional solvent, it may reflow unevenly.

In addition to the wet etching, the deteriorated layer of the organic film pattern may be formed by deteriorating the surface layer of the organic film pattern by at least one of the following factors: deterioration in time, thermal oxidation, and thermal curing. Further, for example, a deposition layer may be formed on the surface of the organic film pattern by deposition by dry etching. Also in these cases, when dissolution deformation processing is performed with a conventional solvent, it may reflow unevenly.

In other words, in the case where a deteriorated layer or a deposited layer (hereinafter, collectively referred to as an inhibitory layer) is formed in the organic film pattern, when the dissolution deformation treatment is performed with a conventional solvent, the dissolution deformation treatment is inhibited, so that the reflow is uneven. Become.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a solution for dissolution deformation, which can be deformed with good precision to a shape intended for an organic film pattern by dissolution deformation treatment. More preferably, an object of the present invention is to provide a solution for dissolution modification, which can perform uniform dissolution deformation treatment on an organic film pattern having an inhibitory layer.

One of the present invention is a chemical liquid for use in the dissolution deformation treatment of an organic film pattern, and is a chemical solution for dissolution modification containing at least one of amides and nitriles.

Moreover, one of the present invention is a chemical liquid used for the dissolution deformation process of an organic film pattern, Comprising: It is a chemical solution for dissolution deformation containing a nitrogen-containing alkali component and a solvent for dissolution deformation at least.

According to this invention, it can deform | transform with favorable precision into the shape aimed at an organic film pattern by melt-forming process.

Moreover, according to this invention, uniform dissolution deformation process can be performed with respect to the organic film pattern which has an inhibitory layer.

As described above, when the inhibitory layer is formed on the organic film pattern, it is difficult to uniformly dissolve (reflow) the organic film pattern. Thus, there has been a demand for a solution for dissolution modification that can dissolve and deform an organic film pattern uniformly even if an inhibitory layer is present.

Therefore, as a result of earnestly examining by the present inventors, when dissolution deformation processing is performed using the dissolution deformation | transformation chemical solution containing at least one of amides and nitriles, even if it is the organic film pattern which has an inhibitory layer, it can melt | dissolve uniformly. I knew it was.

That is, the present invention is a chemical solution for dissolution modification containing at least any one of amides and nitriles as a chemical solution used for dissolution deformation treatment of organic film patterns.

First, amides and nitriles will be described.

Examples of the amides include N, N-dimethylacetamide, N, N-diethylacetamide, N, N-dimethylformamide, n-butylacetamide, and the like. Particularly preferred among these is N, N-dimethylacetamide in view of availability and ease of handling. 1 type of these may be sufficient and may mix 2 or more types.

Examples of the nitriles include acetonitrile, propionitrile, 3-aminopropionitrile, isobutyronitrile, n-butyronitrile, pentanenitrile, and benzonitrile. Moreover, a mixture thereof may be sufficient. Among these, acetonitrile is particularly preferable in terms of availability and ease of handling. 1 type of these may be sufficient and may mix 2 or more types.

The chemical solution for dissolution modification may contain any one of amides and nitriles, and may contain both.

In addition, when adjusting the reflow rate (speed of dissolution deformation) or reducing the amount of organic components, water may be mixed with the dissolution deformation chemical liquid.

The content of water is not particularly limited as long as the reflow rate is not lowered to such an extent that it cannot cope with the process, but can be, for example, 90% or less.

Moreover, as a result of earnestly examining by the present inventors, when the dissolution deformation process is performed using the dissolution deformation | transformation chemical liquid containing a nitrogen containing alkali component and the solvent for dissolution modification (it is also called a reflow solvent), the organic film pattern which has an inhibitory layer It can be seen that even after dissolution uniformly.

It can be seen that a nitrogen-containing alkali component is adsorbed on the organic film pattern surface to modify the inhibitory layer, thereby enabling uniform dissolution deformation reflow.

The nitrogen-containing alkali component (hereinafter also abbreviated as A component) is an alkali component containing a nitrogen atom, and examples thereof include amines, ammonia and alkylammonium hydroxide. Amines are preferred for their potency and ease of handling.

As amines, monoethanolamine, isopropanolamine, N-methylethanolamine, N, N- dimethylethanolamine, and morpholine are mentioned preferably, for example. One kind of these amines may be used, or two or more kinds thereof may be mixed and used.

In addition, the solvent for dissolution deformation (hereinafter also abbreviated as B component) is an organic solvent capable of dissolving and dissolving the organic film pattern. The solvent for dissolution modification is not particularly limited, and examples thereof include alcohols, ethers, esters, ketones and glycol ethers. Moreover, nitriles, amides, etc. which were mentioned above are mentioned. Examples of the glycol ethers include propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and the like. Methyl isobutyl ketone etc. are mentioned as ketones. Examples of the nitriles include acetonitrile, propionitrile, 3-aminopropionitrile, isobutyronitrile, n-butyronitrile, pentanenitrile, and benzonitrile. Examples of the amides include N, N-dimethylacetamide, N, N-diethylacetamide, N, N-dimethylformamide, n-butylacetamide, and the like. The solvent for melt | dissolution deformation may be 1 type, and may mix 2 or more types.

It is preferable to make content of amines into 0.2 mass% or more and 30 mass% or less. By setting it as 0.2 mass% or more, the ability to generate reflow uniformly becomes easy to be exhibited sufficiently. Moreover, it becomes easy to improve the reflow rate by the solvent for melt | dissolution deformation by setting it as 30 mass% or less.

It is preferable to make content of the solvent for melt | dissolution deformation into 40 mass% or more and 99.8 mass% or less. By setting it as 40 mass% or more, it becomes easy to improve reflow rate. Moreover, it becomes easy to produce reflow uniformly by setting it as 99.8 mass% or less.

In addition, water can be contained in the solution for dissolution modification. Water can be used when adjusting the reflow rate or when lowering the content of the solvent for dissolution deformation.

60 mass% or less is preferable, and, as for content of water, 50 mass% or less is more preferable. By setting it as 60 mass% or less, it becomes easy to prevent that reflow rate falls too much. It is preferable to make the total content of a solvent for melt | dissolution deformation and water into 70 mass% or more.

In addition, the solution for dissolution modification may contain other additives, for example, may contain a surfactant.

(Organic membrane)

The organic film in the present invention is a photoresist film. Examples of the material include a resist made of only an organic material and a resist made of a mixture of an organic material and an inorganic material.

As a resist which consists only of an organic material, a polyvinyl type, rubber type, and novolak type material is mentioned, for example. As a specific example of a polyvinyl type, polyvinyl-type pinic acid ester is mentioned, for example. Moreover, as a rubber specific example, what mixed the bisazide compound with the cyclic polyisoprene or the cyclic polybutadiene is mentioned, for example. Moreover, as a specific example of novolak-type, the thing which mixed cresol novolak resin and naphthoquinone diazide-5-sulfonic acid ester is mentioned, for example. In addition, the copolymerization resin of acrylic acid is also mentioned, for example, More specifically, polyacrylamide and polyamic acid are mentioned. Moreover, the resist containing bromine and iodine may be sufficient.

Moreover, as a resist which consists of an organic material and an inorganic material, Si containing resist is mentioned, for example. As a Si containing resist, the resist containing a siloxane, polysiloxane, polysilane, polysilane, or carbosilane is mentioned, for example. Moreover, as an example of metal containing resists other than Si, there also exists a resist containing germanium.

The organic film may be either negative or positive. As positive type, what mixed novolak-type resin, for example, cresol novolak resin and naphthoquinone diazide-5-sulfonic acid ester is suitable. As a negative type, what mix | blended the bis azide compound with rubber type resin, for example, cyclic polyisoprene and cyclized polybutadiene, is suitable.

As negative type resist, for example, "cerek rex N" of Merck Corporation (brand name), "OMR-83, 85" (brand name) of Tokyo Oka Corporation, "JSR-CIR701" (brand name) of the Nippon synthesis, Kodak "KMR-747" (brand name) of the company, the "way coat" (brand name) of Hunt company, etc. are mentioned.

As a positive type resist, for example, "AZ series" (brand name) of Hefst Corporation, "microposition 1400" (brand name) of Seafrey company, "HPR-204, 206" (brand name) of Hunt Corporation, " OFPR series "(brand name), the Nippon synthesis" JSR series "(brand name), Kodak Corporation" KMPR-820 "(brand name), etc. are mentioned.

Next, the dissolution deformation treatment will be described.

The dissolution deformation treatment can be performed by contacting the organic film pattern with steam generated by bubbling the solution for dissolution deformation with an inert gas. The dissolution deformation treatment can also be carried out by bringing the chemical solution for dissolution deformation into contact with the organic film pattern in a liquid state.

You may divide and perform melt | dissolution deformation process in multiple times as needed.

EMBODIMENT OF THE INVENTION Hereinafter, with reference to drawings, embodiment of the dissolution modification process using the dissolution modification chemical liquid which concerns on this invention is described.

Here, the dissolution deformation treatment described in this embodiment is a treatment (dissolution deformation treatment) which is deformed by dissolving the organic film pattern formed on the substrate.

Although this melt deformation | transformation process is not specifically limited, For example, for the purpose of using the organic film pattern after melt-forming the organic film pattern formed on the board | substrate for a use different from the organic film pattern before the melt deformation, Is carried out.

The process of dissolving and deforming an organic film pattern is the process of reflowing an organic film pattern. For this reason, melt deformation processing is also called melt deformation reflow process, melt reflow process, or simply reflow process.

The chemical solution for dissolution deformation used in the dissolution deformation treatment is also called a reflow chemical solution.

[First Embodiment]

BRIEF DESCRIPTION OF THE DRAWINGS It is process drawing which shows an example of the manufacturing method of the TFT board | substrate of the liquid crystal display device using a dissolution deformation process. In addition, in this embodiment, the example which formed the original organic film pattern 4 (refer FIG. 1 (B)) by the photolithographic method so that it may have a film thickness of several steps (for example, two steps) is demonstrated. do.

First, as shown in FIG. 1A, the semiconductor film 6 and the conductive film 2 are formed in this order on the substrate 1, and the organic film 3 is formed on the conductive film 2. Apply.

Next, the first organic film pattern 4 having the film thickness of two steps and separated from each other by performing the exposure treatment in which the exposure amount is controlled in two or more steps, the development treatment, and the heat treatment as the prebaking in this order. ) Is formed on the substrate 1.

Here, as an exposure process, the exposure process which performs two consecutive exposures, and the halftone mask exposure process using the pattern formed from the film | membrane which has a transmittance | permeability of two or more steps as a mask can be performed, for example. Or the exposure process using a gray tone mask by a normal pattern and a fine pattern below an exposure limit can be performed.

As a result, specifically, for example, as shown in FIG. 1 (B), in each of the pair of organic film patterns 4 adjacent to each other, the portion close to the other organic film pattern 4 has a film thickness. The thick, part far from the other organic film pattern 4 forms the 1st organic film pattern 4 isolate | separated from each other so that film thickness may become thin.

Subsequently, using the first organic film pattern 4 as a mask, the conductive film 2 is subjected to etching treatment (wet etching or dry etching) for the conductive film 2 on the substrate 1. Pattern processing is performed by car. That is, in the conductive film 2, the part which is not coat | covered with the 1st organic film pattern 4 is removed (FIG. 1 (C)).

By this etching treatment, deposits are deposited on the surface of the first organic film pattern 4 on the altered layer formed by altering the surface layer portion of the organic film pattern 4 or on the surface of the organic film pattern 4. Inhibiting layers, such as a deposited layer, are formed.

In the deteriorated layer, for example, the surface layer portion of the organic film pattern 4 is deteriorated due to factors such as deterioration in time, thermal oxidation or thermal curing. For example, the surface layer part of the organic film pattern 4 is deteriorated by the wet etching liquid process. For example, the surface layer part of the organic film pattern 4 is deteriorated by dry etching or ashing. In addition, as a deposition layer, it is a layer deposited on the surface of the organic film pattern 4 by deposition by dry etching, for example.

Subsequently, the reproduction processing is performed, and after the reproduction processing, the heating treatment which is prebaking is performed again, thereby processing the first organic film pattern 4 into the second organic film pattern 5 having a new pattern shape. do. That is, the thin film part in the 1st organic film pattern 4 is removed, and it is set as the 2nd organic film pattern 5 whose film thickness is only one step (FIG. 1 (D)).

Next, the dissolution deformation treatment is performed on the second organic film pattern 5 using the chemical solution for dissolution deformation, and the layers adjacent to each other of the second organic film pattern 5 are integrated to form one new third layer. It processes into the organic film pattern 7 (FIG. 1 (E)). As a result, as shown in FIG. 1E, a portion of the semiconductor film 6 located between the pair of conductive films 2 adjacent to each other is covered with the third organic film pattern 7. Becomes

Subsequently, the semiconductor film 6 is etched (dry etching) using the third organic film pattern 7 and the conductive film 2 as masks (FIG. 1E).

Thereafter, the organic film pattern 7 is peeled off (FIG. 1 (F)).

[Second embodiment]

In this embodiment, an example of the manufacturing process of the TFT board | substrate of the liquid crystal display device using the liquid solution for melt | dissolution deformation is demonstrated.

5A to 5G show a series of steps for manufacturing a TFT substrate of a liquid crystal display device in the case of the present embodiment, each showing a plan view and a cross-sectional view of the TFT element.

In this embodiment, the example which cuts a process by using a halftone mask exposure is shown.

Here, the halftone mask exposure will be described. First, a photosensitive organic film (hereinafter referred to as a resist film) pattern is formed so that a difference in film thickness of a plurality of stages occurs. For example, a resist film is formed in several stages of film thickness by exposing to a resist film two times continuously or exposing using the exposure mask which changed the transmittance step by step at the time of one exposure.

If the thin film portion of the resist film of the plurality of stages (for example, two stages) is removed by ashing or the like, the pattern of the resist film is changed before and after the removal.

For this reason, when each resist film is used as a resist mask before and after removing the thin film portion, the same effect as in the case where the resist film is formed twice by performing two lithography steps can be obtained in one lithography step.

That is, the lower layer film is etched using the resist film before removing the thin film portion as a resist mask, and then the lower layer film is etched using the resist film after removing the thin film portion as a resist mask, thereby forming two types of patterns in the lower layer film. can do.

Such a method is generally used in a 5PR process to a 4PR process as a novel process for cost reduction, as a reduction in the photography process of TFT element formation.

Further, in the mask pattern of the reticle used in the photolithography step, a light shielding portion and a semi-transmissive portion are formed, and the light shielding portion and the semi-transmissive portion are transferred to a resist film to form the first resist mask.

And as a method of forming this said translucent part, there exist the following (1) and (2) methods.

(1) The method of forming the same material as the material (mainly chromium film) of a light shielding part into the pattern processed to the dimension below a resolution limit.

(2) A method of forming a material of a light shielding part (mainly a chromium film) and a film of a dissimilar material having a larger transmittance than the material of the light shielding part. As a different material, a chromium oxide film and tungsten silicide are mentioned, for example.

Hereinafter, an example of a manufacturing method is demonstrated with reference to FIG.

First, as shown to FIG. 5 (A), the gate wiring 2001 is formed on a glass substrate (not shown).

Next, an interlayer insulating film (for example, a single layer or a two layer film of silicon oxide film (SiO ₂ ) or silicon nitride film (SiN _x )) 2002 is formed so as to cover the gate wiring 2001.

Next, on the interlayer insulating film 2002, a semiconductor film 2003 made of an amorphous silicon (a-Si) layer and an ohmic contact (n + a-Si) layer and a metal film for drain wiring 2004 are laminated. Here, the ohmic contact layer is composed of an n-type amorphous silicon (n + a-Si) layer doped with phosphorus impurities.

Next, an organic film (for example, a resist film) is applied on the drain wiring metal film 2004.

Next, an organic film (hereinafter referred to as "resist") pattern is formed by exposure and development using an exposure mask (halftone mask). Here, a resist pattern 2005 having a film thickness of two stages is formed.

Next, as shown in FIG. 5B, the underlying film, that is, the drain wiring metal film 2004 is etched using the resist pattern 2005 as a mask. By this etching, the drain wiring metal film 2004 becomes a source-drain electrode and a source-drain wiring.

Next, as shown to FIG. 5 (C), the dissolution deformation process is performed with respect to the resist pattern 2005. FIG.

This dissolution deformation process is a gas atmosphere process performed by exposing an organic film pattern to the vapor of the dissolution deformation chemical liquid, for example.

By this dissolution deformation processing, as shown in Fig. 5C, the source mask resist mask and the drain electrode resist mask are reflowed in the transverse direction, and the source resist mask and the drain electrode resist mask are connected to each other. A connection resist mask 2006 is obtained.

Next, as shown to FIG. 5D, at least one part of connection resist mask 2006 is removed by a removal process. In addition, a removal process can be performed by the image development process which used the developing solution, for example.

In this removal process, the thin part of the resist pattern which has the film thickness of the said two steps is removed. In this process, a part of the resist mask whose area is enlarged mainly by the dissolution deformation process, that is, the unnecessary reflow part can be removed, and the final pattern shape can be formed with good precision.

Next, as shown in Fig. 5E, the amorphous silicon (a-Si) layer and the ohmic contact (n) using the connection resist mask 2006, the source-drain electrode and the source-drain wiring as a mask. The semiconductor film 2003 made of the + a-Si layer is etched away to form a semiconductor island 2007.

Next, as shown to FIG. 5 (F), the connection resist mask 2006 is peeled and removed from the semiconductor island 2007. Next, as shown to FIG.

Next, as shown in FIG. 5 (G), CH (channel) etching is performed using the stripped source-drain electrode and source-drain wiring as a mask. By this CH (channel) etching, at least an upper ohmic contact (n + a) of the semiconductor film 2003 composed of an amorphous silicon (a-Si) layer and an ohmic contact (n + a-Si) layer between the source and the drain -Si) layer is removed and some amorphous silicon (a-Si) layer is left.

The subsequent steps are omitted, but then, a passivation film (insulating film: usually a plasma silicon nitride film) is formed, contact holes are formed on the source electrode and the drain electrode, respectively, and connected to the source electrode at the bottom of these contact holes. Terminal part electrodes connected to the pixel electrode and the drain electrode are formed.

In this way, a TFT substrate is formed, and then an opposing substrate facing the TFT substrate is disposed on the semiconductor island 2007 side of the TFT substrate. Further, the liquid crystal composition is filled between the TFT substrate and the opposing substrate to complete the liquid crystal display device.

The CH (channel) etching can also be performed after etching the drain wiring metal film 2004 using the resist pattern 2005 as a mask (FIG. 5 (B)). In this case, after removing the connecting resist mask 2006 from the semiconductor island 2007 (FIG. 5 (F)), the amorphous silicon (a-Si) layer of at least a portion of the contaminated or deteriorated channel portion is slightly removed until then. It is preferable to remove the etching. Alternatively, it is desirable to surface treat at least a portion of the amorphous silicon (a-Si) layer of the contaminated or altered channel portion. However, even in this case, most of the amorphous silicon (a-Si) layer is left.

[Third Embodiment]

In this embodiment, an example of the manufacturing process of the TFT board | substrate of the liquid crystal display device using the liquid solution for melt | dissolution deformation is demonstrated.

6 (A) to 6 (G) show a series of steps for manufacturing a TFT substrate of a liquid crystal display device in the present embodiment, and show plan and cross-sectional views of the TFT elements, respectively.

In this embodiment, a normal standard mask is used without using halftone mask exposure.

First, as shown to FIG. 6 (A), the gate wiring 3001 is formed on a glass substrate (not shown).

Next, the interlayer insulating film 3002 is formed by covering the gate wiring 3001. As the interlayer insulating film 3002, for example, a single layer or a two layer film of a silicon oxide film (SiO ₂ ) or a silicon nitride film (SiN _x ) can be used.

Next, a semiconductor film 3003 made of an amorphous silicon (a-Si) layer and an ohmic contact (n + a-Si) layer and a drain wiring metal film 3004 are laminated on the interlayer insulating film 3002. Here, the ohmic contact layer is composed of an n-type amorphous silicon (n + a-Si) layer doped with phosphorus impurities.

Next, an organic film (for example, a resist film) is apply | coated on the metal film 3004 for drain wiring.

Next, an organic film (hereinafter referred to as "resist") pattern 3005 is formed by exposure and development using an exposure mask (standard mask).

Next, as shown to FIG. 6 (B), the base film, ie, the drain wiring metal film 3004, is etched using the resist pattern 3005 as a mask. By this etching, the drain wiring metal film 3004 becomes a source-drain electrode and a source-drain wiring.

Next, as shown to FIG. 6 (C), the dissolution deformation process is performed with respect to the resist pattern 3005. FIG.

By this dissolution deformation processing, as shown in Fig. 6C, the source mask resist mask and the drain electrode resist mask are reflowed in the transverse direction, and the source resist mask and the drain electrode resist mask are connected to each other. A connection resist mask 3006 is provided.

Next, as shown to FIG. 6D, at least one part of the connection resist mask 3006 is removed by a removal process. This removal processing is the same as in the second embodiment.

Here, a part of the connection resist mask 3006 whose area is enlarged by the dissolution deformation treatment, that is, the unnecessary dissolution deformation portion can be removed, so that the final organic film pattern can be formed in a desired shape with good precision. do.

Next, as shown in Fig. 6E, the amorphous silicon (a-Si) layer and the ohmic contact (n) using the connection resist mask 3006, the source and drain electrodes, and the source and drain wirings as masks. The semiconductor film 3003 made of the + a-Si layer is etched away to form a semiconductor island 3007. In FIG. 6E, this is described as a-Si etching.

Next, as shown to FIG. 6F, the connection resist mask 3006 is peeled and removed from the semiconductor island 3007. Next, as shown in FIG.

Next, as shown in FIG. 6 (G), CH (channel) etching is performed using the stripped source-drain electrode and source-drain wiring as a mask. By CH (channel) etching, the ohmic contact (n + a) of at least an upper layer of the semiconductor film 3003 including an amorphous silicon (a-Si) layer and an ohmic contact (n + a-Si) layer between the source and the drain. -Si) layer is removed and at least some amorphous silicon (a-Si) layer remains.

The subsequent steps are omitted, but then, a passivation film (insulating film: usually a plasma silicon nitride film) is formed, contact holes are formed on the source electrode and the drain electrode, respectively, and connected to the source electrode at the bottom of these contact holes. Terminal part electrodes connected to the pixel electrode and the drain electrode are formed.

In this way, the TFT substrate is formed, and then, the opposing substrate facing the TFT substrate is disposed on the semiconductor island 3007 side of the TFT substrate. Further, the liquid crystal composition is filled between the TFT substrate and the opposing substrate to complete the liquid crystal display device.

In addition, CH (channel) etching can also be performed after the etching of the drain wiring metal film 3004 which uses the resist pattern 3005 as a mask (FIG. 6 (B)). In this case, after removing the connection resist mask 3006 from the semiconductor island 3007 (FIG. 6 (F)), at least part of the amorphous silicon (a-Si) layer of the contaminated or deteriorated channel portion until then. It is preferable to slightly etch away or to perform surface treatment. However, even in this case, most of the amorphous silicon (a-Si) layer is left.

In the second and third embodiments, the gate electrode, the source electrode, the drain electrode, and the drain wiring metal film of the thin film transistor include a one-layer structure of aluminum or an aluminum alloy, a one-layer structure of chromium or a chromium alloy, and an aluminum or aluminum alloy. Two-layer structure of chromium or chrome alloy, two-layer structure of aluminum or aluminum alloy and titanium or titanium alloy, two-layer structure of aluminum or aluminum alloy and titanium nitride or titanium nitride alloy, of aluminum or aluminum alloy and molybdenum or molybdenum alloy Two-layer structure, two-layer structure of chromium or chromium alloy and molybdenum or molybdenum alloy, three-layer structure of chromium or chrome alloy and aluminum or aluminum alloy and chromium or chromium alloy, molybdenum or molybdenum alloy and aluminum or aluminum alloy and molybdenum or molybdenum 3-layer structure of alloy, alumin 3-layer structure of aluminum or aluminum alloy and molybdenum or molybdenum alloy and chromium or chromium alloy, 3-layer structure of aluminum or aluminum alloy and molybdenum or molybdenum alloy and titanium or titanium alloy, aluminum or aluminum alloy and titanium nitride or titanium nitride It can be comprised with either an alloy and a three-layered structure of titanium or a titanium alloy.

In addition, although the glass substrate was used in embodiment mentioned above, it is not limited to this, The insulating substrate which consists of another material can also be used.

Moreover, in the said embodiment, although the formation method to the stacked type TFT pattern was demonstrated, the pattern formation method by this invention is not limited to this. For example, the present invention can also be applied to the formation of a TFT pattern with a color filter having a color filter layer or a flattening film and a color filter layer formed below the pixel electrode in the TFT pattern formation method described above.

In addition, in the said embodiment, although this invention was demonstrated using the electric field drive type liquid crystal display device as an example, this invention is not limited to this. For example, the present invention can also be applied to a transverse electric field driven liquid crystal display (IPS (In-Plane Switching) LCD).

Moreover, the pattern formation method demonstrated by embodiment mentioned above can also be used as a manufacturing method of a TFT substrate. An example of the TFT substrate is a TFT substrate for a liquid crystal display device.

After the production of the TFT substrate, an insulating film, a color (RGB: red, green, blue) filter layer, a black matrix layer, a color filter or a monochromatic filter formed with a transparent electrode are formed, and then a pixel electrode such as ITO, an alignment film, and the like A liquid crystal display device can be manufactured by forming an outer component, sealing a liquid crystal between a TFT substrate and a counter substrate, and attaching a polarizing filter to both substrates.

As a method of partially controlling the film thickness of the resist mask, for example, the following method is available.

(1) In the mask pattern of the reticle used in the exposure process, a light shielding portion and a semi-shielding portion controlled by the amount of transmitted light of at least two or more stages are formed, and the light shielding portion and the semi-shielding portion are transferred to the resist film to form a resist mask. How to.

(2) A method of forming a resist mask by changing the exposure amount in at least two steps using two or more kinds of reticle masks in the exposure step.

Here, the resist mask film thickness is partially controlled using a halftone mask, and a resist pattern having a film thickness of two stages is formed, but the resist pattern is a reticle having a light shielding portion and a semi-transmissive portion. .

Hereinafter, the specific example of this resist pattern formation method is demonstrated.

(Example 1)

On the reticle substrate, the light shielding portion and the translucent portion are formed of, for example, chrome metal.

This transflective part is comprised by the pattern of the chromium metal below the exposure resolution limit. For example, a rectangular pattern whose pattern width dimension is equal to or less than the exposure wavelength is arranged at a predetermined pitch. Or such a rectangular pattern is formed in grid | lattice form.

In the area | region in which the chromium metal pattern below the exposure resolution limit is formed, the transmission amount of exposure irradiation light is set so that it may be 20 to 80%. In this way, the semi-transmissive portion is formed.

(Example 2)

On the reticle substrate, for example, a light shielding portion is formed of chrome metal in a predetermined pattern. The chromium metal in the region to be the translucent portion is etched to form a thin film portion.

In the area | region in which the thin film part of chromium metal is formed, it sets so that about half of exposure irradiation light may transmit. In this way, the semi-transmissive portion is formed.

(Example 3)

On the reticle substrate, for example, a light shielding portion is formed of chrome metal in a predetermined pattern. The semi-transmissive portion is formed as a halftone portion.

Here, the halftone portion is formed of tungsten silicide, molybdenum silicide or the like, for example. In this way, the semi-transmissive portion is formed.

Here, the case where the organic film pattern is reflowed uniformly in the dissolution deformation treatment will be described with reference to FIG. 3. Non-uniform reflow can be inferred because the surface of the organic film pattern is deteriorated by the etching solution, and the dissolution and deformation chemicals are inhibited from penetrating into the organic film pattern or conversely promoted. have. In addition, the thickness of the deteriorated portion is thick or thin in part depending on the degree of the deterioration (WE: wet etching treatment condition or organic film formation condition), which is considered to be because the permeability of the solution for dissolution and deformation becomes uneven. .

3 is a view showing a state in which the planar shape and the cross-sectional shape of the organic film pattern are changed by the dissolution deformation treatment.

3 (A) shows the planar shape (left drawing) and cross-sectional shape (right drawing) of the organic film pattern 20 before the melt deformation treatment.

FIG. 3B shows a planar shape (left figure) and a cross-sectional shape (right figure) when the organic film pattern 20 is uniformly reflowed by the melt deformation treatment, that is, when the melt deformation treatment is normal. In this case, the organic film pattern 20 is uniformly diffused so that the channel portions are combined, and the other portions are diffused in the same manner.

In the case where the dissolution modification treatment is performed using the dissolution modification chemical liquid according to the present invention, the dissolution modification chemical liquid penetrates evenly into the organic film pattern 20 and dissolves almost uniformly throughout the organic film pattern 20. Dissolution occurs at a rate. For this reason, as shown to FIG. 3 (B), since the whole organic film pattern 20 reflows integrally, the organic film pattern 20 can be deformed to the target shape with favorable precision.

FIG. 3C shows an abnormality occurring when the reflow rate is different in the surface layer portion and inside of the organic film pattern 20. In this case, the organic film pattern 21 diffuses thinly and largely, and the organic film pattern 22 diffused thick and small is reflowed.

FIG. 3D shows an abnormality that occurs when the altered layer partially remains at the surface layer portion of the organic film pattern 20. In this case, the direction in which the organic film pattern 20 is reflowed and diffused is nonuniform and irregular. For this reason, organic film pattern bonding of the channel part made into the objective does not occur, and parts other than a channel part reflow and diffuse.

4 is a view showing a state in which the cross-sectional shape of the organic film pattern is changed by the dissolution deformation treatment when the deteriorated layer is formed in the organic film pattern after development.

4A shows the cross-sectional shape of the organic film pattern 30 after development.

FIG. 4B shows a state in which the altered layer 32 is formed in the surface layer portion of the organic film pattern 30 as a result of etching the underlying film 31 by wet etching after development.

4 (C) and 4 (D) show the dissolution deformation treatment using a conventional chemical liquid. In this case, the reflow rate is different on the surface and inside of the organic film pattern 30, resulting in non-uniform reflow. That is, the organic film pattern 30, for example, has a high reflow rate of only a part of the surface (slightly inclined portion), and is not an integral reflow of the entire organic film pattern 30. In other words, a part of the surface of the organic film pattern 30 is reflowed to a low viscosity, while the inside of the organic film pattern 30 is not so reflowed to a high viscosity. For this reason, the inside of the organic film pattern 30 is hard to reflow, and it is easy to remain, but the peripheral part of the organic film pattern 30 spreads thinly (FIG. 4 (D)). Moreover, the deflection of the diffusion of the organic film pattern 30 also tends to occur.

4 (E) and 4 (F) show the dissolution deformation treatment using the solution for dissolution modification according to the present embodiment. In this case, it melt | dissolves to the inside of the organic film pattern 30 at a substantially uniform reflow speed, and the integral reflow of the whole organic film pattern 30 arises. In other words, the entire organic film pattern 30 is reflowed into the liquid phase at a uniform viscosity. For this reason, since the joining part of a pair of organic film pattern 30 swells by surface tension and increases thickness compared with the case of FIG. 4 (D), it is set as the film thickness similar to another part. Can be. Therefore, the pattern in which the pair of organic film patterns 30 are combined can be made like the organic film pattern formed integrally from the beginning. Moreover, the diffusion of the organic film pattern 30 can also be suppressed as much as possible. In addition, the deflection of diffusion of the organic film pattern 30 hardly occurs. Therefore, the organic film pattern 30 can be deformed to a desired shape with good precision. Moreover, the uniform melt deformation | transformation process can be performed with respect to the organic film pattern 30 which has an inhibitory layer (for example, a altered layer).

Therefore, by performing the melt strain treatment using the melt strain chemical solution according to the present embodiment, it is possible to melt strain with good accuracy in a shape aimed at the organic film pattern. Moreover, the uniform dissolution deformation process can be performed with respect to the organic film pattern which has an inhibitory layer which consists of at least one of a deterioration layer and a deposition layer.

Example

Next, the Example which evaluated what kind of result the dissolution deformation process produces according to the composition of the dissolution deformation chemical liquid is demonstrated.

Table 1 is a diagram showing the composition of the chemical solution for dissolution strain used in the dissolution strain treatment and the results of the dissolution strain treatment ("Results" column in Table 1) for Examples 1 to 4 and Comparative Examples 1 to 4, respectively. to be.

(Example 1)

In Example 1, the dissolution modifying chemical liquid which consists of 100 mass% N, N- dimethylacetamide (DMAC) was used.

(Example 2)

In Example 2, the dissolution modifying chemical liquid which consists of 100 mass% acetonitrile (ACTN) was used.

(Example 3)

In Example 3, the dissolution modifying chemical liquid which consists of 30 mass% acetonitrile (ACTN) and 70 mass% pure water was used.

(Example 4)

In Example 4, a dissolution modifying chemical liquid consisting of 50% by mass of N, N-dimethylacetamide (DMAC) and 50% by mass of acetonitrile (ACTN) was used.

(Comparative Example 1)

In Comparative Example 1, a dissolution modifying chemical liquid composed of 100% by mass of propylene glycol monomethyl ether (PGME) was used.

(Comparative Example 2)

In the comparative example 2, the dissolution-modifying chemical liquid which consists of 100 mass% diethylene glycol monobutyl ether (BDG) was used.

(Comparative Example 3)

In Comparative Example 3, a dissolution modifying chemical liquid composed of 100% by mass of propylene glycol monomethyl ether acetate (PGMEA) was used.

(Comparative Example 4)

In Comparative Example 4, a dissolution modifying chemical liquid composed of 100% by mass of methyl isobutyl ketone (MIBK) was used.

Table 1 is a figure which shows the composition of the dissolution deformation | transformation chemical | medical solution used for the dissolution deformation | transformation process, and the result of dissolution deformation treatment (the column of Table 1) about Examples 1-4 and Comparative Examples 1-4, respectively.

○: uniformly reflow

×: non-uniform reflow

PGME: Propylene Glycol Monomethyl Ether

PGMEA: Propylene glycol monomethyl ether acetate

DMAC: N, N-dimethylacetamide

ACTN: Acetonitrile

BDG: diethylene glycol monobutyl ether

MIBK: Methyl Isobutyl Ketone

PW: pure

2 is a diagram showing a cross-sectional structure of the evaluation substrate 10 used in each of Examples and Comparative Examples.

The evaluation board | substrate shown in FIG. 2 was manufactured in the order demonstrated below. First, the Al film 12 is formed on the glass substrate 11. Next, a positive photoresist is applied on the Al film 12, and the photoresist is exposed and developed to form the organic film pattern 13. Next, using the organic film pattern 13 as a mask, the evaluation film 10 of FIG. 2 was manufactured by etching the Al film 12 with the etching liquid using the mixed chemical liquid of phosphoric acid, nitric acid, and acetic acid system. In addition, since the evaluation board | substrate 10 was manufactured in this way, when the Al film | membrane 12 is etched, the inhibitory layer (specifically, a quality alteration layer) is formed in the surface layer part of the organic film pattern 13.

All evaluation was performed at room temperature.

Hereinafter, the procedure of specific evaluation is demonstrated.

First, the chemical solution for dissolution modification was put into the chalet. At this time, the amount of the chemical liquid was adjusted so that the distance from the liquid level of the dissolution strain chemical liquid to the entrance of the chalet was 1 cm.

Subsequently, the chalet was completely covered with a lid on the evaluation substrate 10 so that the organic film pattern was lowered (so that the organic film pattern was in contact with the vapor of the chemical solution for dissolution and deformation). After 30 seconds, the evaluation substrate 10 was removed from the chalet, the N ₂ gas was blown out with an N ₂ gun, and the evaluation substrate was dried.

As described above, the melt deformation treatment is completed.

And the evaluation board | substrate 10 after a process was observed with the optical microscope, and the reflow degree of the organic film pattern was confirmed.

In Table 1, "○" indicates that the organic film pattern was reflowed uniformly, "x" indicates that the organic film pattern was reflowed unevenly, and "no change" means that no change occurred in the organic film pattern. Indicates. Here, uniform reflow means that the whole organic film pattern is integrated and reflowed as shown to FIG. 4 (E)-FIG. 4 (F), and the joint part increased in thickness by surface tension. In addition, non-uniform reflow refers to a state in which the inside is not reflowed and the surroundings are diffused thinly, as shown in FIGS. 4C to 4D.

That is, as shown in Table 1, in all the Examples (Examples 1-4), the organic film pattern reflowed uniformly.

On the other hand, in Comparative Examples 1, 3, and 4, the organic film pattern reflowed unevenly, and in Comparative Example 2, the organic film pattern did not reflow.

Moreover, about the other dissolution deformation | transformation chemical liquid, the Example which evaluated what kind of result of dissolution deformation treatment according to a composition is demonstrated. In addition, evaluation was performed similarly to the above-mentioned.

Table 2 shows the compositions of the chemical solution for dissolution strain used in the first dissolution deformation treatment for each of Examples 5 to 15 and Comparative Examples 5 to 9 (the "reflow first column" in Table 2), and 2 The presence or absence of the first dissolution deformation treatment (with the "second presence or absence" column of Table 2), and the composition of the dissolution deformation | transformation chemical liquid used for the process ("Reflow 2 of Table 2") when the second dissolution deformation treatment is performed. Column) and the melted strain treatment result (the "result" column in Table 2).

As shown in Table 2, in Examples 5-14 and Comparative Examples 5-8, melt deformation | transformation process was performed only once. In Example 15 and Comparative Example 9, the dissolution deformation treatment was performed twice.

(Example 5)

In Example 5, the dissolution modifying chemical liquid which consists of 10 mass% monoethanolamine as A component and 90 mass% propylene glycol monomethyl ether as B component was used.

(Example 6)

In Example 6, a dissolution modifying chemical liquid consisting of 10% by mass of monoethanolamine as the A component, 30% by mass of propylene glycol monomethyl ether as the B component, and 60% by mass of propylene glycol monomethyl ether acetate was used.

(Example 7)

In Example 7, a dissolution modifying chemical liquid consisting of 10% by mass of monoethanolamine as the A component and 90% by mass of methyl isobutyl ketone as the B component was used.

(Example 8)

In Example 8, the dissolution modifying chemical liquid which consists of 5 mass% monoethanolamine as A component and 95 mass% N, N- dimethylacetamide as B component was used.

(Example 9)

In Example 9, a dissolution modifying chemical liquid consisting of 5% by mass of N-methylethanolamine as the A component and 95% by mass of N, N-dimethylacetamide as the B component was used.

(Example 10)

In Example 10, a dissolution modifying chemical liquid consisting of 10% by mass of isopropanolamine as the A component and 90% by mass of propylene glycol monomethyl ether as the B component was used.

(Example 11)

In Example 11, the dissolution-modifying chemical liquid consisting of 10 mass% N, N-dimethylethanolamine as A component and 90 mass% propylene glycol monomethyl ether as B component was used.

(Example 12)

In Example 12, the dissolution-modifying chemical liquid consisting of 10 mass% morpholine as A component and 90 mass% propylene glycol monomethyl ether as B component was used.

(Example 13)

In Example 13, a dissolution modifying chemical liquid consisting of 5% by mass of monoethanolamine as the A component, 20% by mass of acetonitrile as the B component and 75% by mass of propylene glycol monomethyl ether acetate was used.

(Example 14)

In Example 14, for dissolution modification consisting of 5% by mass of monoethanolamine as component A, 20% by mass of acetonitrile as component B and 55% by mass of propylene glycol monomethyl ether acetate and 20% by mass of pure water as component C A chemical solution was used.

(Example 15)

In the first melt deformation treatment of Example 15, a solution for dissolution strain consisting of 10% by mass of monoethanolamine as the A component and 90% by mass of diethylene glycol monobutyl ether as the B component was used. In the 2nd melt-forming process of this Example 15, the dissolution-modifying chemical liquid which consists of 100 mass% of propylene glycol monomethyl ether was used.

(Comparative Example 5)

Moreover, in the comparative example 5, the dissolution modifying chemical liquid which consists of 100 mass% monoethanolamine as A component was used.

(Comparative Example 6)

In Comparative Example 6, a dissolution modifying chemical liquid composed of 100% by mass of propylene glycol monomethyl ether as the B component was used.

(Comparative Example 7)

In Comparative Example 7, a dissolution modifying chemical liquid composed of 100% by mass of propylene glycol monomethyl ether acetate as the B component was used.

(Comparative Example 8)

In the comparative example 8, the dissolution modifying chemical liquid which consists of 100 mass% isopropanolamine as B component was used.

(Comparative Example 9)

In the first dissolution deformation treatment of Comparative Example 9, a dissolution modification chemical liquid composed of 100% by weight of diethylene glycol monobutyl ether as the B component was used. In the 2nd dissolution deformation process of this comparative example 9, the dissolution deformation chemical liquid which consists of 100 mass% of propylene glycol monomethyl ether was used.

MEA: monoethanolamine ○: uniformly reflow

IPA: isopropanolamine ×: reflow unevenly

MMEA: No change in N-methylethanolamine: No change in organic film pattern

DMEA: N, N-dimethylethanolamine

PGME: Propylene Glycol Monomethyl Ether

PGMEA: Propylene glycol monomethyl ether acetate

DMAC: N, N-dimethylacetamide

ACTN: Acetonitrile

BDG: diethylene glycol monobutyl ether

MIBK: Methyl Isobutyl Ketone

PW: pure

BRIEF DESCRIPTION OF THE DRAWINGS The figure which shows a series of process of manufacturing TFT board | substrate of a liquid crystal display device using the melt | dissolution deformation processing method which concerns on embodiment.

2 shows a cross-sectional structure of an evaluation substrate used in Examples and Comparative Examples.

3 is a view showing a state in which the planar shape and the cross-sectional shape of the organic film pattern are changed by performing the melt deformation treatment.

4 is a view showing a state in which a shape of an organic film pattern is changed by performing dissolution deformation treatment on an organic film pattern on which a deteriorated layer is formed.

FIG. 5 is a diagram showing a series of steps for manufacturing a TFT substrate of a liquid crystal display device in the embodiment; FIG.

FIG. 6 is a diagram showing a series of steps for manufacturing a TFT substrate of a liquid crystal display device in the embodiment. FIG.

[Description of Drawings]

1: substrate 2: conductive film

3: organic film 4: organic film pattern (first organic film pattern)

5: organic film pattern (second organic film pattern) 6: semiconductor film

7: organic film pattern (third organic film pattern) 11: glass substrate

12: Al film 13: organic film pattern

20: organic film pattern 30: organic film pattern

32: altered layer 2001: gate wiring

2002: interlayer insulating film 2003: semiconductor film

2004: drain wiring metal film 2005: resist pattern

2006: connection resist mask 2007: semiconductor island

3001: gate wiring 3002: interlayer insulating film

3003: semiconductor film 3004: metal film for drain wiring

3005: organic film pattern 3006: connection resist mask

3007: semiconductor island

Claims (16)

As a chemical liquid used for dissolution deformation processing of an organic film pattern, A solution for dissolution modification, containing at least one of amides and nitriles. The method of claim 1, A chemical solution for dissolution modification, containing at least the amides and wherein the amides are N, N-dimethylacetamide. The method according to claim 1 or 2, The chemical solution for dissolution modification containing at least said nitriles and said nitriles being acetonitrile. The method of claim 1, The dissolution-modifying chemical liquid further contains water. As a chemical liquid used for dissolution deformation processing of an organic film pattern, A solution for dissolution modification comprising at least a nitrogen-containing alkali component and a solvent for dissolution modification containing at least one of the amides and the nitriles according to claim 1. The method of claim 5, A solution for dissolution modification, wherein the nitrogen-containing alkali component is an amine. The method of claim 6, The amines are at least one member selected from the group consisting of monoethanolamine, isopropanolamine, N-methylethanolamine, N, N-dimethylethanolamine, and morpholine. delete The method of claim 5, The dissolution modifying solvent contains at least one of acetonitrile and N, N-dimethylacetamide. The method of claim 6, The dissolution-modifying chemical liquid further contains water. The method of claim 6, The chemical liquid for melt | dissolution deformation whose content of the said amines is 0.2-30 mass%, and whose content of the said solvent for dissolution deformation is 70-99.8 mass%. 11. The method of claim 10, Content of the said amines is 0.2-30 mass%, content of the said solvent for solvent transformation is 40-99.8 mass%, content of the said water is 59.8 mass% or less, and the sum total of content of the said solvent for solvent solvent and content is 70 The chemical liquid for melt | dissolution deformation which is mass% or more. The dissolution deformation processing method of dissolving and dissolving the said organic film pattern by making the chemical liquid for dissolution deformation of Claim 1 contact the said organic film pattern formed on the board | substrate. The dissolution deformation treatment method of dissolving the organic film pattern by exposing the vapor of the dissolution modifying chemical liquid according to claim 1 to the organic film pattern formed on the substrate. The dissolution deformation treatment method of dissolving and dissolving the said organic film pattern by making the chemical liquid for dissolution deformation of Claim 5 contact with the said organic film pattern formed on the board | substrate. The dissolution deformation treatment method of dissolving the organic film pattern by exposing the vapor of the dissolution modifying chemical liquid according to claim 5 to the organic film pattern formed on the substrate.

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