TW200715073A - Photoresist stripper composition and method for manufacturing a semiconductor device using the same - Google Patents

Photoresist stripper composition and method for manufacturing a semiconductor device using the same

Info

Publication number
TW200715073A
TW200715073A TW095135611A TW95135611A TW200715073A TW 200715073 A TW200715073 A TW 200715073A TW 095135611 A TW095135611 A TW 095135611A TW 95135611 A TW95135611 A TW 95135611A TW 200715073 A TW200715073 A TW 200715073A
Authority
TW
Taiwan
Prior art keywords
weight
semiconductor device
same
manufacturing
stripper composition
Prior art date
Application number
TW095135611A
Other languages
Chinese (zh)
Inventor
Byoung-Mook Kim
Jung-Jae Myung
Hun-Pyo Hong
Youn-Soo Choi
Se-Yoon Oh
Bae Hyeon Jung
Original Assignee
Samsung Electronics Co Ltd
Dongwoo Fine Chem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd, Dongwoo Fine Chem Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200715073A publication Critical patent/TW200715073A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The present invention relates to a photoresist stripping composition comprising 5 to 30% by weight of an organic amine compound of the formula 1, 10 to 30% by weight of a glycol ether compound of the formula 2, 10 to 50% by weight of a water-soluble organic solvent, 0.1 to 10% by weight of a corrosion inhibitor, 0.1 to 5% by weight of an oxide solubilizing agent, and a residual amount of deionized water, based on the total weight of the composition; and to a process for preparing a semiconductor device using the same.
TW095135611A 2005-09-28 2006-09-26 Photoresist stripper composition and method for manufacturing a semiconductor device using the same TW200715073A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050090447A KR20070035722A (en) 2005-09-28 2005-09-28 Photoresist stripper composition and method for manufacturing a semiconductor device using the same

Publications (1)

Publication Number Publication Date
TW200715073A true TW200715073A (en) 2007-04-16

Family

ID=37900003

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095135611A TW200715073A (en) 2005-09-28 2006-09-26 Photoresist stripper composition and method for manufacturing a semiconductor device using the same

Country Status (3)

Country Link
KR (1) KR20070035722A (en)
TW (1) TW200715073A (en)
WO (1) WO2007037628A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112130428A (en) * 2013-11-15 2020-12-25 达兴材料股份有限公司 Photoresist remover, electronic component and method for manufacturing the same

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8580656B2 (en) 2008-07-14 2013-11-12 Air Products And Chemicals, Inc. Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor
WO2010118916A1 (en) 2009-04-16 2010-10-21 Basf Se Organic photoresist stripper composition
KR100950779B1 (en) * 2009-08-25 2010-04-02 엘티씨 (주) Composition of stripper for all tft-lcd process photoresist
US8883701B2 (en) 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
KR101089211B1 (en) * 2010-12-02 2011-12-02 엘티씨 (주) Composition of stripping solution for liquid crystal display process photoresist comprising primary alkanolamine
TWI588253B (en) 2012-03-16 2017-06-21 巴地斯顏料化工廠 Photoresist stripping and cleaning composition, method of its preparation and its use
KR101697336B1 (en) * 2016-03-03 2017-01-17 주식회사 엘지화학 Method for preparing liquid crystal aligning agent

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100306649B1 (en) * 1997-12-03 2001-11-14 주식회사 동진쎄미켐 Resist stripper, resist stripping method using the stripper, resist stripper recycling apparatus, and resist stripper controlling apparatus
JP2001100436A (en) * 1999-09-28 2001-04-13 Mitsubishi Gas Chem Co Inc Resist removing solution composition
KR100511083B1 (en) * 2002-11-07 2005-08-30 동우 화인켐 주식회사 Photoresist and polymer remover composition, and exfoliation and the washing method of a semiconductor element used it
TWI315030B (en) * 2003-06-26 2009-09-21 Dongwoo Fine Chem Co Ltd Photoresist stripper composition, and exfoliation method of a photoresist using it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112130428A (en) * 2013-11-15 2020-12-25 达兴材料股份有限公司 Photoresist remover, electronic component and method for manufacturing the same

Also Published As

Publication number Publication date
KR20070035722A (en) 2007-04-02
WO2007037628A1 (en) 2007-04-05

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