WO2007037628A1 - Photoresist stripper composition and method for manufacturing a semiconductor device using the same - Google Patents

Photoresist stripper composition and method for manufacturing a semiconductor device using the same Download PDF

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Publication number
WO2007037628A1
WO2007037628A1 PCT/KR2006/003881 KR2006003881W WO2007037628A1 WO 2007037628 A1 WO2007037628 A1 WO 2007037628A1 KR 2006003881 W KR2006003881 W KR 2006003881W WO 2007037628 A1 WO2007037628 A1 WO 2007037628A1
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WIPO (PCT)
Prior art keywords
group
acid
photoresist
weight
composition according
Prior art date
Application number
PCT/KR2006/003881
Other languages
French (fr)
Inventor
Byoung-Mook Kim
Jung-Jae Myung
Hun-Pyo Hong
Youn-Soo Choi
Se-Yoon Oh
Bae-Hyeon Jung
Original Assignee
Samsung Electronics Co., Ltd.
Dongwoo Fine-Chem. Co., Ltd.
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Application filed by Samsung Electronics Co., Ltd., Dongwoo Fine-Chem. Co., Ltd. filed Critical Samsung Electronics Co., Ltd.
Publication of WO2007037628A1 publication Critical patent/WO2007037628A1/en

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Definitions

  • the present invention relates to a photoresist stripping composition, and a process for preparing a semiconductor device using the same. More specifically, the present invention relates to a photoresist stripping composition for stripping and solubilizing the photoresist film remaining after a wet and/or dry etching process(s), and if any, the metal oxide film formed on the photoresist film, in the process for preparing a semiconductor device, a liquid crystal display device, or the like; to a process for preparing the photoresist stripping composition; and to a process for preparing a semiconductor device using the photoresist stripping composition.
  • the processes for preparing a semiconductor device or a liquid crystal display device typically are classified into a process for forming a gate, a process for forming a semiconductor layer, a process for forming an S/D, a process for forming a passivation film, a process for forming pixels, and the like, and according to the number of the photoresist masking processes employed in carrying out each of the above processes, the description, "5 mask", "4 mask”, or the like is used.
  • the photoresist masking process can be composed of a process for forming a photoresist layer on a metal or oxide film, a process for forming a photoresist pattern by exposure and development through the mask, a process for etching the metal or oxide film using the pattern, and a process for stripping the photoresist pattern.
  • Examples of a solution for stripping the patterned photoresist layer typically include inorganic acids, inorganic bases, or organic solvents, such as a halogenated organic solvent, an alkyl benzene sulfonic acid, and a mixture of an aromatic hydrocarbon solvent and an alkyl benzene sulfonic acid.
  • organic solvent usually an organic solvent is used.
  • an amine-based stripper comprising a polar solvent and an amine is increasingly used.
  • the amine-based photoresist stripper may cause corrosion of the metal film in the washing step after stripping.
  • the conventionally proposed organic solvent strippers are not sufficient in the ability of stripping the photoresist residues.
  • they do not have sufficient ability of solubilizing the polymeric substances constituting the photoresist, such that the stripped photoresist residues are re-adhered to the semiconductor substrate, the glass substrate, or the like, or additional solvents as by-products are produced.
  • the process since the process is carried out at high temperature, it is not advantageous from the viewpoint of an environmental aspect and a treatment cost. And the process has a limitation in washing the residues, and is required to use an organic solvent such as isopropyl alcohol, and dimethyl sulfoxide in a subsequent washing step.
  • the present invention provide a photoresist stripping composition
  • a photoresist stripping composition comprising 5 to 30% by weight of an organic amine compound of the following formula 1, 10 to 30% by weight of a glycol ether compound of the following formula 2, 10 to 50% by weight of a water-soluble organic solvent, 0.1 to 10% by weight of a corrosion inhibitor, 0.1 to 5% by weight of an oxide solubilizing agent, and a residual amount of deionized water, based on the total weight of the composition:
  • R , R and R represent each independently hydrogen, a linear chained or branch chained C alkyl or hydroxy alkyl group, a linear chained or branch chained C alkenyl or hydroxy alkenyl group, or a C cycloalkyl or hydroxy cycloalkyl group, and at least one of R , R and R is a hydroxyalkyl group, a hydroxyalkenyl group or a hydroxy cycloalkyl group.
  • R represents a linear chained or branch chained C alkyl group, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a pentyl group, a hexyl group, a heptyl group, and an octyl group,
  • R represents hydrogen or a linear chained or branch chained C 1-6 alkyl group
  • n and n are each an integer of 0 to 3, provided that m+n is 2 or 3, and
  • [20] t is an integer of 1 to 5.
  • the present invention provides a process for preparing a semiconductor device, comprising
  • a step of forming a pattern on the photoresist film by exposure and development processes [25] a step of etching the metal film or the oxide film in the region of the formed photoresist film pattern, and [26] a step of removing the photoresist film pattern using a photoresist stripping composition comprising 5 to 30% by weight of an organic amine compound of the formula 1, 10 to 30% by weight of a glycol ether compound of the formula 2, 10 to 50% by weight of a water-soluble organic solvent, 0.1 to 10% by weight of a corrosion inhibitor, 0.1 to 5% by weight of an oxide solubilizing agent, and a residual amount of deionized water, based on the total weight of the composition.
  • a photoresist stripping composition comprising 5 to 30% by weight of an organic amine compound of the formula 1, 10 to 30% by weight of a glycol ether compound of the formula 2, 10 to 50% by weight of a water-soluble organic solvent, 0.1 to 10% by weight of a corrosion inhibitor, 0.1 to 5% by weight
  • the photoresist stripping composition according to the present invention can easily strip a modified, cured photoresist generated during the wet or dry etching process at low temperature in a short time by means of a dipping process, a spray process, a single wafer system process, or an air-knife process, and does not cause damage on the quality of the metal film and the oxide film in the lower portion of the photoresist exposed to the stripper composition.
  • the composition can prevent for the oxides discharged from the substrate during removal of the photoresist to be re-adhered onto the substrate in the case of simultaneously carrying out a step of forming a passivation layer and a step of forming a pixel for simplification of the masking process.
  • water can be used alone in the washing step without a need of the use of an organic solvent in a subsequent washing process. Best Mode for Carrying Out the Invention
  • the photoresist stripping composition according to the present invention is charact erized in that it comprises 5 to 30% by weight of an organic amine compound of the formula 1, 10 to 30% by weight of a glycol ether compound of the formula 2, 10 to 50% by weight of a water-soluble organic solvent, 0.1 to 10% by weight of a corrosion inhibitor, 0.1 to 5% by weight of an oxide solubilizing agent, and a residual amount of deionized water, based on the total weight of the composition.
  • the organic amine compound of the formula 1 is contained in an amount of less than 5% by weight, the stripping of the photoresist is lowered, whereas if the organic amine compound of the formula 1 is contained in an amount of more than 30% by weight, the corrosion of the lower membrane occurs.
  • the glycol ether compound of the formula 2 is contained in an amount of less than 10% by weight, the penetration of the stripping solution for stripping the photoresist is lowered, whereas if the glycol ether compound of the formula 2 is contained in an amount of more than 30% by weight, the solubility of the photoresist is lowered.
  • the water-soluble organic solvent is contained in an amount of less than 10% by weight, the solubility of the photoresist is lowered.
  • the corrosion inhibitor is contained in an amount of less than 0.1% by weight, the corrosion of the lower membrane occurs, whereas if the corrosion inhibitor is contained in an amount of more than 10% by weight, a precipitation problem occurs. If the oxide solubilizing agent is contained in an amount of less than 0.1% by weight, the solubility of the oxide is lowered, whereas if the oxide solubilizing agent is contained in an amount of more than 5% by weight, a precipitation problem occurs.
  • amine compound of the formula 1 examples include mono-, di- or tri-ethanolamine, mono-, di- or tri-propanolamine, mono-, di- or tri-isopropanolamine, butanolamine, butylmonoethanolamine, ethyldiethanolamine, and JV-methylaminoethanol.
  • amine compound of the formula 1 mo- noethanolamine, diethanolamine, triethanolamine, JV-methylaminoethanol, ethyldiethanolamine, or a mixture thereof is preferably used, and monoethanolamine, JV-methylaminoethanol, isopropanolamine, or a mixture thereof is more preferably used.
  • the glycol ether derivative has both of an ether group and a hydroxyl group in the molecule, and thus is an excellent solvent which is easily mixed with water, thereby finding a wide variety of applications. Addition of such the glycol ethers functions as a kind of a surfactant, to provide reduction of the surface tension of the solution, to enhance the penetration force and thus to reinforce the stripping ability at a relatively low temperature.
  • glycol ether compound of the formula 2 used in the present invention alkyleneglycol monoethers are preferably used.
  • the glycol ether compound of the formula 2 include the compounds having the formula in which R is methyl or butyl, R is hydrogen, m+n is 2 or 3, and t is 1, 2 or 3.
  • Specific examples of the compound include the following compounds:
  • Examples of more preferable compound of the formula 2 include ethyleneglycol monobutylether, diethyleneglycol monobutylether, triethyleneglycol monobutylether, or a mixture thereof.
  • examples of the water-soluble organic solvent include alcohols, such as methanol, ethanol, n-propylalcohol, isopropylalcohol, n-butanol, pentanol, ethyleneglycol, propyleneglycol, triethyleneglycol, 2-methyl-l,3-propanediol, 3-methyl-l,3-butanediol, furfurylalcohol, and tetrahydrofur- furylalcohol; amides, such as N-methylformamide, JV,./V-dimethylformamide, N,N - dimethylacetamide, and JV-methyl-2-pyrrolidone; lactones, such as ⁇ -butyrolactone; esters, such as methyllactate, and ethyllactate; ketones, such as acetone, methylethylketone, and acetylacetone; sulfolanes, such as methanol, ethanol, n
  • water-soluble organic solvent examples include propyleneglycol, triethyleneglycol, 2-methyl-l,3-propanediol, 3-methyl-l,3-butanediol, tetrahydrofurfurylalcohol, triethyleneglycol, JV-methyl-2-pyrrolidone, dimethyl sulfoxide, or a mixture thereof.
  • examples of the corrosion inhibitor include a compound capable of neutralizing a hydroxyl group generated by amine, such as sugar alcohols, and aromatic hydroxy compounds.
  • sugar alcohols examples include linear chained polyhydric alcohols such as sorbitol, mannitol, threosol, and xylitol, among which sorbitol, mannitol, xylitol or a mixture thereof is particularly preferable.
  • the sorbitol, mannitol, xylitol, or a mixture thereof functions to effectively penetrate the hydroxyl ions generated from the reaction between the organic amine and water through the contact surface between the photoresist layer and the substrate, to enhance the stripping ability by generating a chelating reaction with a metal substance contained in the etching residues, and further to inhibit the corrosion of the lower metal layer caused by the hydroxyl group generated from the stripper composition by forming a corrosion inhibiting film using a chelating reaction with the surface of the lower metal layer.
  • examples of the aromatic hydroxy compound used as the corrosion inhibitor include hydroquinone, catechol, resorcinol, and pyrogallol, among which catechol, pyrogallol or a mixture thereof is preferable.
  • examples of the oxide solubilizing agent include an organic acid and an organic acid compound.
  • the organic acid the organic acid of formula 3 can be used.
  • R ⁇ 6 represents hydrogen, a carboxyl group, a linear chained or branch chained C
  • alkyl group a linear chained or branch chained C alkenyl group, a C cycloalkyl group or a C allyl group, each of which may be substituted with a substituent selected from the group consisting of halogen, a hydroxyl group, a carboxyl group, and a sulfone group.
  • the organic acid of the formula 3 used as an oxide solubilizing agent generates a chelating and/or coordinating reaction with the metal substances in the etching residues to remove the metal substances, thereby preventing their re-adherence.
  • the carboxylic acid group in the organic acid compound functions to solubilize oxides. Accordingly, addition of an appropriate amount of the compound of the formula 3 provides effective removal of the metal ion contaminants in the photoresist residues, and in the case of simplification of the masking process, provides concomitant solubilization of the oxide discharged from the substrate upon removing the photoresist.
  • R 6 in the formula 3 include -H, -CH , -CH CH , -CH CH CH ,
  • examples of the particularly preferable organic acid include phthalic acid, oxalic acid, succinic acid, citric acid, salicylic acid, or a mixture thereof.
  • examples of the organic acid compound include phthalate, oxalate, succinate, citrate, salicylate, or a mixture thereof.
  • deionized water activates the organic amine compound as described for the photoresist stripping composition to enhance the ability of stripping the photoresist, as well as to reduce the corrosion of the lower metal layer caused by the hydroxyl group generated from the washing step directly using water.
  • the photoresist stripping composition according to the present invention can further comprise an additive which is usullay added in a stripping solution, such as a surfactant, an antifoaming agent, or a mixture thereof.
  • an additive which is usullay added in a stripping solution, such as a surfactant, an antifoaming agent, or a mixture thereof.
  • the surfactant as an additive, the uniformity of the stripping can be improved.
  • the amount of the additive is not limited, but it is 0.001 to 1% by weight, and preferably 0.001 to 0.5% by weight based on the total amount of the composition.
  • the stripper composition of the present invention has very low corrosiveness to a silicon oxide film, or an aluminum, copper, molybdenum, or chrome metal film, and an alloy thereof, which constitutes a semiconductor in the process for preparing a semiconductor such as an LSI device, and a liquid crystal, and in particularly is suitable for aluminum, copper or molybdenum films, and an alloy thereof.
  • the above- described components can be advantageously mixed in predetermined amounts within the above-described ranges.
  • the mixing method is not particularly limited, but any of various known mixing methods can be employed.
  • the stripping process of the present invention can be used to remove the modified, cured photoresist generated during the wet or dry etching process, as well as oxides such as ITO, a-ITO and IZO discharged from the substrate during removal of the photoresist by simplification of the process.
  • the process for stripping the photoresist can be carried out in the same manner as a commonly known stripping process, except for using the stripper composition according to the present invention.
  • a process which the stripping solution and the substrate contact on which the photoresist film and the etching residues are formed good results can be obtained.
  • the process for stripping the photoresist of the present invention include methods using a dipping process, a spray process, a single wafer system process, or an air-knife process.
  • the stripping conditions are such that the temperature is usually from 10 to 100 0 C, and preferably 20 to 8O 0 C, and the dipping and spraying time is usually 5 sec. to 30 min., and preferably 10 sec. to 10 min., but the present invention is not limited thereto.
  • the stripping conditions can be readily adapted by an ordinary skilled person in the art.
  • the stripper composition of the present invention is excellent in the ability of stripping the modified, cured photoresist generated during the wet or dry etching process, and has very low corrosiveness to the substances such as the metal film and the oxide film, which constitute a semiconductor device and a liquid crystal display device. Consequently, it can be used in the step of washing the semiconductor device such as an LSI device, and a liquid crystal panel.
  • Mode for the Invention
  • TMAH Tetramethylammoniumhydroxide
  • DMSO Dimethyl sulfoxide
  • THFA Tetrahydrofurfurylalcohol
  • BDG Diethyleneglycol monobutylether
  • EGB Ethyleneglycol monobutylether
  • TEGB Triethyleneglycol monobutylether
  • EG Ethyleneglycol
  • PG Propyleneglycol
  • TEG Triethyleneglycol.
  • Table 2 Table 2
  • Experimental Example 2 The effect of the addition of an organic acid compound was observed on the basis of the descriptions in Experimental Example 1.
  • a test specimen in which a Mo/ Al-Nd double layer had been formed on a glass substrate using a thin film sputtering process, and a wiring pattern had been formed using a photoresist, was immersed in an ordinary etching solution to etch the metal film, and then to form the metal oxide film pattern.
  • the test specimen was dipped in the stripping solution prepared from the compounds as depicted in Table 3 under the treatment conditions as shown in Table 4, and washed with deionized water. Thereafter, the results were observed using a scanning electron microscope (SEM, HITACHI S-4700).
  • TMAH Tetramethylammoniumhydroxide
  • NMP JV-methyl-2-pyrrolidone
  • BDG Diethyleneglycol monobutylether
  • TEGB Triethylenegly col monobutylether
  • TEG Triethyleneglycol
  • Table 4 confirmed that in the case of adding an oxalic acid, the oxide film discharged from the substrate had excellent solubility in the stripper by simplification of the process, without affecting the stripping ability and the corrosion inhibitor of the stripper.

Abstract

The present invention relates to a photoresist stripping composition comprising 5 to 30% by weight of an organic amine compound of the formula 1, 10 to 30% by weight of a glycol ether compound of the formula 2, 10 to 50% by weight of a water-soluble organic solvent, 0.1 to 10% by weight of a corrosion inhibitor, 0.1 to 5% by weight of an oxide solubilizing agent, and a residual amount of deionized water, based on the total weight of the composition; and to a process for preparing a semiconductor device using the same.

Description

Description
PHOTORESIST STRIPPER COMPOSITION AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
USING THE SAME
Technical Field
[1] The present invention relates to a photoresist stripping composition, and a process for preparing a semiconductor device using the same. More specifically, the present invention relates to a photoresist stripping composition for stripping and solubilizing the photoresist film remaining after a wet and/or dry etching process(s), and if any, the metal oxide film formed on the photoresist film, in the process for preparing a semiconductor device, a liquid crystal display device, or the like; to a process for preparing the photoresist stripping composition; and to a process for preparing a semiconductor device using the photoresist stripping composition.
[2] This application claims priority benefits from Korean Patent Application No.
10-2005-0090447, filed on September 28, 2005, the entire contents of which are fully incorporated herein by reference. Background Art
[3] The processes for preparing a semiconductor device or a liquid crystal display device typically are classified into a process for forming a gate, a process for forming a semiconductor layer, a process for forming an S/D, a process for forming a passivation film, a process for forming pixels, and the like, and according to the number of the photoresist masking processes employed in carrying out each of the above processes, the description, "5 mask", "4 mask", or the like is used. The photoresist masking process can be composed of a process for forming a photoresist layer on a metal or oxide film, a process for forming a photoresist pattern by exposure and development through the mask, a process for etching the metal or oxide film using the pattern, and a process for stripping the photoresist pattern.
[4] Examples of a solution for stripping the patterned photoresist layer, that is, a stripper, typically include inorganic acids, inorganic bases, or organic solvents, such as a halogenated organic solvent, an alkyl benzene sulfonic acid, and a mixture of an aromatic hydrocarbon solvent and an alkyl benzene sulfonic acid. Among these, usually an organic solvent is used. Recently, an amine-based stripper comprising a polar solvent and an amine is increasingly used. However, the amine-based photoresist stripper may cause corrosion of the metal film in the washing step after stripping. Moreover, due to the difference in the solubilities of the stripper and the washing water, the substances solubilized by the stripper may be precipitated. In order to solve the problems, extensive studies have been made to apply an isopropyl alcohol (IPA) washing process after stripping, or to provide a novel stripper composition which can attenuate the corrosion problem caused by the residual components of the stripper in the stripping step.
[5] Further, the conventionally proposed organic solvent strippers are not sufficient in the ability of stripping the photoresist residues. In addition, they do not have sufficient ability of solubilizing the polymeric substances constituting the photoresist, such that the stripped photoresist residues are re-adhered to the semiconductor substrate, the glass substrate, or the like, or additional solvents as by-products are produced. Also, since the process is carried out at high temperature, it is not advantageous from the viewpoint of an environmental aspect and a treatment cost. And the process has a limitation in washing the residues, and is required to use an organic solvent such as isopropyl alcohol, and dimethyl sulfoxide in a subsequent washing step.
[6] On the other hand, since recently, there is a tendency that the semiconductor devices and the liquid crystal display devices become larger and are increasingly produced on large scale, a photoresist stripping process using spray, single wafer system, or air knife, rather than dipping using a conventional stripper becomes universal. As such, there exists a need of development of a photoresist stripping composition suitable for a spray process, a single wafer system process, an air knife process, or the like.
[7] Furthermore, in the case of combining a process for forming a passivation film and a process for forming a pixel into one process as the device process gets simpler (simplification of a masking process), it may be necessary to involve a step for simultaneously removing the remaining metal oxides such as ITO, a- ITO and IZO after forming a pixel unit, as well as in the process for removing the photoresist. In this case, in order to simultaneously remove the photoresist and the unwanted oxides formed thereon, it is necessary to use a novel stripping solution of a new concept different from that of conventional stripping solution, but a stripper composition capable of simultaneously removing the photoresist and the above-described oxides has not been heretofore known. Disclosure of Invention Technical Problem
[8] It is an object of the present invention to provide a photoresist stripping composition, which can easily strip a modified, cured photoresist generated during the wet or dry etching process in a relatively short time by means of a dipping process, a spray process, a single wafer system process, or an air-knife process; does not cause damage on the quality of the metal film and the oxide film in the lower portion of the photoresist layer exposed to the stripping solution; can be washed with water only without a need of the use of an organic solvent in a subsequent washing process; and can simultaneously remove the photoresist and the above-described oxides such as ITO, a-ITO, and IZO discharged from the substrate upon removing the photoresist due to simplification of the masking process.
[9] It is another object of the present invention to provide a process for preparing a semiconductor device using the photoresist stripping composition. Technical Solution
[10] In order to solve the above-described problems, the present invention provide a photoresist stripping composition comprising 5 to 30% by weight of an organic amine compound of the following formula 1, 10 to 30% by weight of a glycol ether compound of the following formula 2, 10 to 50% by weight of a water-soluble organic solvent, 0.1 to 10% by weight of a corrosion inhibitor, 0.1 to 5% by weight of an oxide solubilizing agent, and a residual amount of deionized water, based on the total weight of the composition:
[11] [Formula 1]
[12]
R1
!
R2 - N - R3
[13] wherein R , R and R represent each independently hydrogen, a linear chained or branch chained C alkyl or hydroxy alkyl group, a linear chained or branch chained C alkenyl or hydroxy alkenyl group, or a C cycloalkyl or hydroxy cycloalkyl group, and at least one of R , R and R is a hydroxyalkyl group, a hydroxyalkenyl group or a hydroxy cycloalkyl group.
[14] [Formula 2]
[15]
R4-O-[(CHRV(CH2)nJrOH
[16] wherein
[17] R represents a linear chained or branch chained C alkyl group, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a pentyl group, a hexyl group, a heptyl group, and an octyl group,
[18] R represents hydrogen or a linear chained or branch chained C 1-6 alkyl group,
[19] m and n are each an integer of 0 to 3, provided that m+n is 2 or 3, and
[20] t is an integer of 1 to 5.
[21] Further, the present invention provides a process for preparing a semiconductor device, comprising
[22] a step of forming a metal film or an oxide film on a substrate,
[23] a step of forming a photoresist film on the metal film or the oxide film,
[24] a step of forming a pattern on the photoresist film by exposure and development processes, [25] a step of etching the metal film or the oxide film in the region of the formed photoresist film pattern, and [26] a step of removing the photoresist film pattern using a photoresist stripping composition comprising 5 to 30% by weight of an organic amine compound of the formula 1, 10 to 30% by weight of a glycol ether compound of the formula 2, 10 to 50% by weight of a water-soluble organic solvent, 0.1 to 10% by weight of a corrosion inhibitor, 0.1 to 5% by weight of an oxide solubilizing agent, and a residual amount of deionized water, based on the total weight of the composition.
Advantageous Effects
[27] The photoresist stripping composition according to the present invention can easily strip a modified, cured photoresist generated during the wet or dry etching process at low temperature in a short time by means of a dipping process, a spray process, a single wafer system process, or an air-knife process, and does not cause damage on the quality of the metal film and the oxide film in the lower portion of the photoresist exposed to the stripper composition. The composition can prevent for the oxides discharged from the substrate during removal of the photoresist to be re-adhered onto the substrate in the case of simultaneously carrying out a step of forming a passivation layer and a step of forming a pixel for simplification of the masking process. Further, when using the photoresist stripping composition according to the present invention, water can be used alone in the washing step without a need of the use of an organic solvent in a subsequent washing process. Best Mode for Carrying Out the Invention
[28] Hereinbelow, the present invention will be explained in detail.
[29] The photoresist stripping composition according to the present invention is charact erized in that it comprises 5 to 30% by weight of an organic amine compound of the formula 1, 10 to 30% by weight of a glycol ether compound of the formula 2, 10 to 50% by weight of a water-soluble organic solvent, 0.1 to 10% by weight of a corrosion inhibitor, 0.1 to 5% by weight of an oxide solubilizing agent, and a residual amount of deionized water, based on the total weight of the composition. Herein, if the organic amine compound of the formula 1 is contained in an amount of less than 5% by weight, the stripping of the photoresist is lowered, whereas if the organic amine compound of the formula 1 is contained in an amount of more than 30% by weight, the corrosion of the lower membrane occurs. If the glycol ether compound of the formula 2 is contained in an amount of less than 10% by weight, the penetration of the stripping solution for stripping the photoresist is lowered, whereas if the glycol ether compound of the formula 2 is contained in an amount of more than 30% by weight, the solubility of the photoresist is lowered. If the water-soluble organic solvent is contained in an amount of less than 10% by weight, the solubility of the photoresist is lowered. If the corrosion inhibitor is contained in an amount of less than 0.1% by weight, the corrosion of the lower membrane occurs, whereas if the corrosion inhibitor is contained in an amount of more than 10% by weight, a precipitation problem occurs. If the oxide solubilizing agent is contained in an amount of less than 0.1% by weight, the solubility of the oxide is lowered, whereas if the oxide solubilizing agent is contained in an amount of more than 5% by weight, a precipitation problem occurs.
[30] In the present invention, specific examples of the amine compound of the formula 1 include mono-, di- or tri-ethanolamine, mono-, di- or tri-propanolamine, mono-, di- or tri-isopropanolamine, butanolamine, butylmonoethanolamine, ethyldiethanolamine, and JV-methylaminoethanol. As the amine compound of the formula 1, mo- noethanolamine, diethanolamine, triethanolamine, JV-methylaminoethanol, ethyldiethanolamine, or a mixture thereof is preferably used, and monoethanolamine, JV-methylaminoethanol, isopropanolamine, or a mixture thereof is more preferably used.
[31] On the other hand, the glycol ether derivative has both of an ether group and a hydroxyl group in the molecule, and thus is an excellent solvent which is easily mixed with water, thereby finding a wide variety of applications. Addition of such the glycol ethers functions as a kind of a surfactant, to provide reduction of the surface tension of the solution, to enhance the penetration force and thus to reinforce the stripping ability at a relatively low temperature.
[32] As the glycol ether compound of the formula 2 used in the present invention, alkyleneglycol monoethers are preferably used. Preferable specific examples of the glycol ether compound of the formula 2 include the compounds having the formula in which R is methyl or butyl, R is hydrogen, m+n is 2 or 3, and t is 1, 2 or 3. Specific examples of the compound include the following compounds:
[33] CH CH CH CH -OCH CH -OH;
3 2 2 2 2 2
[34] CH CH CH CH -OCH CH -OCH CH -OH;
3 2 2 2 2 2 2 2
[35] CH 3 CH2 CH2 CH2 -OCH 2 CH2 -OCH 2 CH2 -OCH 2 CH2 -OH;
[36] CH 3 CH2 CH2 CH2 -OCH 2 CH2 -OCH 2 CH2 -OCH 2 CH2 -OCH 2 CH2 -OH;
[37] CH 3 -OCH 2 CH 2 -OH;
[38] CH 3 -OCH 2 CH 2 -OCH 2 CH 2 -OH;
[39] CH 3 -OCH 2 CH2 -OCH 2 CH2 -OCH 2 CH2 -OH; [40] CH -OCH CH -OCH CH -OCH CH -OCH CH -OH;
3 2 2 2 2 2 2 2 2
[41] CH -OCH CH CH -OH;
3 2 2 2
[42] CH -OCH CH CH -OCH CH CH -OH;
[43] CH -OCH CH CH -OCH CH CH -OCH CH CH -OH;
3 2 2 2 2 2 2 2 2 2
[44] CH -OCH CH CH -OCH CH CH -OCH CH CH -OCH CH CH -OH;
3 2 2 2 2 2 2 2 2 2 2 2 2
[45] Examples of more preferable compound of the formula 2 include ethyleneglycol monobutylether, diethyleneglycol monobutylether, triethyleneglycol monobutylether, or a mixture thereof.
[46] In the composition of the present invention, examples of the water-soluble organic solvent include alcohols, such as methanol, ethanol, n-propylalcohol, isopropylalcohol, n-butanol, pentanol, ethyleneglycol, propyleneglycol, triethyleneglycol, 2-methyl-l,3-propanediol, 3-methyl-l,3-butanediol, furfurylalcohol, and tetrahydrofur- furylalcohol; amides, such as N-methylformamide, JV,./V-dimethylformamide, N,N - dimethylacetamide, and JV-methyl-2-pyrrolidone; lactones, such as γ-butyrolactone; esters, such as methyllactate, and ethyllactate; ketones, such as acetone, methylethylketone, and acetylacetone; sulfolanes, such as sulfolane; sulfoxides, such as dimethyl sulfoxide; and other organic solvents. Examples of the particularly preferable water-soluble organic solvent include propyleneglycol, triethyleneglycol, 2-methyl-l,3-propanediol, 3-methyl-l,3-butanediol, tetrahydrofurfurylalcohol, triethyleneglycol, JV-methyl-2-pyrrolidone, dimethyl sulfoxide, or a mixture thereof.
[47] In the composition of the present invention, examples of the corrosion inhibitor include a compound capable of neutralizing a hydroxyl group generated by amine, such as sugar alcohols, and aromatic hydroxy compounds.
[48] Examples of the sugar alcohols include linear chained polyhydric alcohols such as sorbitol, mannitol, threosol, and xylitol, among which sorbitol, mannitol, xylitol or a mixture thereof is particularly preferable. The sorbitol, mannitol, xylitol, or a mixture thereof functions to effectively penetrate the hydroxyl ions generated from the reaction between the organic amine and water through the contact surface between the photoresist layer and the substrate, to enhance the stripping ability by generating a chelating reaction with a metal substance contained in the etching residues, and further to inhibit the corrosion of the lower metal layer caused by the hydroxyl group generated from the stripper composition by forming a corrosion inhibiting film using a chelating reaction with the surface of the lower metal layer.
[49] Further, examples of the aromatic hydroxy compound used as the corrosion inhibitor include hydroquinone, catechol, resorcinol, and pyrogallol, among which catechol, pyrogallol or a mixture thereof is preferable.
[50] In the composition of the present invention, examples of the oxide solubilizing agent include an organic acid and an organic acid compound. [51] As the organic acid, the organic acid of formula 3 can be used.
[52] [Formula 3]
[53]
R6CO2H
[54] wherein
[55] R ^ 6 represents hydrogen, a carboxyl group, a linear chained or branch chained C
1-10 alkyl group, a linear chained or branch chained C alkenyl group, a C cycloalkyl group or a C allyl group, each of which may be substituted with a substituent selected from the group consisting of halogen, a hydroxyl group, a carboxyl group, and a sulfone group.
[56] Generally, since oxides do not react with an organic solvent, if the masking process is simplified only by way of the use of the property of the organic stripper comprising the organic solvent, it is impossible to solubilize the oxide discharged from the substrate, together with the photoresist. However, in the present invention, by using an organic acid or an organic acid compound as an oxide solubilizing agent, the above- described problems can be solved.
[57] In the present invention, the organic acid of the formula 3 used as an oxide solubilizing agent generates a chelating and/or coordinating reaction with the metal substances in the etching residues to remove the metal substances, thereby preventing their re-adherence. Further, the carboxylic acid group in the organic acid compound functions to solubilize oxides. Accordingly, addition of an appropriate amount of the compound of the formula 3 provides effective removal of the metal ion contaminants in the photoresist residues, and in the case of simplification of the masking process, provides concomitant solubilization of the oxide discharged from the substrate upon removing the photoresist.
[58] Specific examples of R6 in the formula 3 include -H, -CH , -CH CH , -CH CH CH ,
3 2 3 2 2 3
-CH CH CH CH , -CH CH(CH ) , -CH -CO H, -CH CH -CO H, -CH CH CH -CO H,
2 2 2 3 2 3 2 2 2 2 2 2 2 2 2 2
-CO H, -cis-CH =CH-CO H, -trans-CH =CH-CO H, -CH C(OH)(CO H)CH -CO H, -
2 2 2 2 2 2 2 2 2
C H -2-CO H, -CH -OH, -CH(OH)CH , -CH(OH)CH(OH)-CO H, - CH(OH)CH(OH)CH(OH)CH(OH)CH OH, and -C H -2-OH, and examples of the compound of the formula 3 having such the substituents include formic acid, acetic acid, propionic acid, butyric acid, octanoic acid, nonanoic acid, decanoic acid, valeric acid, isovaleric acid, malonic acid, succinic acid, glutaric acid, oxalic acid, maleic acid, fumaric acid, citric acid, phthalic acid, glycolic acid, lactic acid, tartaric acid, gluconic acid, and salicylic acid. In the present invention, examples of the particularly preferable organic acid include phthalic acid, oxalic acid, succinic acid, citric acid, salicylic acid, or a mixture thereof. [59] In the present invention, as the organic acid compound, a compound in a salt form of the above-described organic acids, or a mixture thereof can be used. In the present invention, examples of the particularly preferable organic acid compound include phthalate, oxalate, succinate, citrate, salicylate, or a mixture thereof.
[60] In the composition of the present invention, deionized water activates the organic amine compound as described for the photoresist stripping composition to enhance the ability of stripping the photoresist, as well as to reduce the corrosion of the lower metal layer caused by the hydroxyl group generated from the washing step directly using water.
[61] The photoresist stripping composition according to the present invention can further comprise an additive which is usullay added in a stripping solution, such as a surfactant, an antifoaming agent, or a mixture thereof. For example, by using the surfactant as an additive, the uniformity of the stripping can be improved. The amount of the additive is not limited, but it is 0.001 to 1% by weight, and preferably 0.001 to 0.5% by weight based on the total amount of the composition.
[62] The stripper composition of the present invention has very low corrosiveness to a silicon oxide film, or an aluminum, copper, molybdenum, or chrome metal film, and an alloy thereof, which constitutes a semiconductor in the process for preparing a semiconductor such as an LSI device, and a liquid crystal, and in particularly is suitable for aluminum, copper or molybdenum films, and an alloy thereof.
[63] In order to obtain the stripper composition of the present invention, the above- described components can be advantageously mixed in predetermined amounts within the above-described ranges. The mixing method is not particularly limited, but any of various known mixing methods can be employed.
[64] For another problem to be solved by the present invention, the stripping process of the present invention can be used to remove the modified, cured photoresist generated during the wet or dry etching process, as well as oxides such as ITO, a-ITO and IZO discharged from the substrate during removal of the photoresist by simplification of the process.
[65] The process for stripping the photoresist can be carried out in the same manner as a commonly known stripping process, except for using the stripper composition according to the present invention. For example, by using a process which the stripping solution and the substrate contact on which the photoresist film and the etching residues are formed, good results can be obtained. Examples of the process for stripping the photoresist of the present invention include methods using a dipping process, a spray process, a single wafer system process, or an air-knife process. In the case of carrying out the stripping using a dipping process, a spray process, a single wafer system process, or an air-knife process, the stripping conditions are such that the temperature is usually from 10 to 1000C, and preferably 20 to 8O0C, and the dipping and spraying time is usually 5 sec. to 30 min., and preferably 10 sec. to 10 min., but the present invention is not limited thereto. The stripping conditions can be readily adapted by an ordinary skilled person in the art.
[66] The stripper composition of the present invention is excellent in the ability of stripping the modified, cured photoresist generated during the wet or dry etching process, and has very low corrosiveness to the substances such as the metal film and the oxide film, which constitute a semiconductor device and a liquid crystal display device. Consequently, it can be used in the step of washing the semiconductor device such as an LSI device, and a liquid crystal panel. Mode for the Invention
[67] Hereinafter, the present invention will be described in more detail by means of the following Examples, but the scope of the invention is not limited thereto.
[68] Experimental Example 1
[69] By means of an ordinary method, a test specimen, in which a Mo/ Al-Nd double layer had been formed on a glass substrate using a thin film sputtering process, and a wiring pattern had been formed using a photoresist, was immersed in an ordinary etching solution to etch the metal film, and then the test specimen was dipped in the stripping solution prepared from the compounds as depicted in Table 1 under the treatment conditions as shown in Table 2, and washed with deionized water. Thereafter, the results were observed using a scanning electron microscope (SEM, HITACHI S-4700). The abilities of stripping the photoresist film, and of inhibiting the corrosion of the lower layer were evaluated, and the results thereof are shown in Table 2. The criteria for evaluation are shown in Table 2. The criteria for evaluation by SEM are as follows.
[70] [Stripping ability]
[71] ®: Good, Δ: Moderate, x: Poor
[72] [Corrosion inhibiting ability]
[73] ®: Good, Δ: Moderate, x: Poor
[74] Table 1
Figure imgf000010_0001
Figure imgf000011_0001
[75] Abbreviations of the compounds in Table 1 are as follows:
[76] TMAH: Tetramethylammoniumhydroxide,
[77] MEA: Monoethanolamine,
[78] MIPA: Isopropanolamine,
[79] NMP: JV-methyl-2-pyrrolidone,
[80] DMSO: Dimethyl sulfoxide, [81] THFA: Tetrahydrofurfurylalcohol, [82] BDG: Diethyleneglycol monobutylether, [83] EGB: Ethyleneglycol monobutylether, [84] TEGB: Triethyleneglycol monobutylether, [85] EG: Ethyleneglycol, [86] PG: Propyleneglycol, [87] TEG: Triethyleneglycol. [88] [89] Table 2
Figure imgf000012_0001
[90] Experimental Example 2 [91] The effect of the addition of an organic acid compound was observed on the basis of the descriptions in Experimental Example 1. By means of an ordinary method, a test specimen, in which a Mo/ Al-Nd double layer had been formed on a glass substrate using a thin film sputtering process, and a wiring pattern had been formed using a photoresist, was immersed in an ordinary etching solution to etch the metal film, and then to form the metal oxide film pattern. The test specimen was dipped in the stripping solution prepared from the compounds as depicted in Table 3 under the treatment conditions as shown in Table 4, and washed with deionized water. Thereafter, the results were observed using a scanning electron microscope (SEM, HITACHI S-4700). The abilities of stripping the photoresist film, and of inhibiting the corrosion of the lower layer were evaluated, and the results thereof are shown in Table 4. Further, in order to evaluate the solubility degree of the oxide, a test specimen, in which an IZO film (indium zinc oxide film) had been formed on a glass substrate using a thin film sputtering process, was dipped in the solution prepared from the compounds as depicted in Table 3 under the treatment conditions as shown in Table 4, and washed with deionized water. Thereafter, the results were observed using a scanning electron microscope (SEM, HITACHI S-4700). The results thereof are shown in Table 4.
[92] Table 3
Figure imgf000013_0001
Figure imgf000014_0001
Figure imgf000015_0001
[93] Abbreviations of the compounds in Table 3 are as follows:
[94] TMAH: Tetramethylammoniumhydroxide,
[95] MEA: Monoethanolamine,
[96] MIPA: Isopropanolamine,
[97] NMP: JV-methyl-2-pyrrolidone,
[98] DMSO: Dimethyl sulfoxide,
[99] THFA: Tetrahydrofurfurylalcohol,
[100] BDG: Diethyleneglycol monobutylether,
[101] EGB : Ethyleneglycol monobutylether,
[102] TEGB: Triethylenegly col monobutylether,
[103] EG: Ethyleneglycol,
[104] PG: Propyleneglycol,
[105] TEG: Triethyleneglycol.
[106] Table 4
Figure imgf000015_0002
Figure imgf000016_0001
[107] Table 4 confirmed that in the case of adding an oxalic acid, the oxide film discharged from the substrate had excellent solubility in the stripper by simplification of the process, without affecting the stripping ability and the corrosion inhibitor of the stripper.
[108] The above results are not limited to the cases of the oxalic acid among the organic acid compounds, and the same results can also be obtained when using organic acids such as oxalate, or a salt thereof.
[109]

Claims

Claims
[1] A photoresist stripping composition comprising 5 to 30% by weight of an organic amine compound of the following formula 1, 10 to 30% by weight of a glycol ether compound of the following formula 2, 10 to 50% by weight of a water-soluble organic solvent, 0.1 to 10% by weight of a corrosion inhibitor, 0.1 to 5% by weight of an oxide solubilizing agent, and a residual amount of deionized water, based on the total weight of the composition: [Formula 1]
R1
I
R2 - N - R3 wherein R , R and R represent each independently hydrogen, a linear chained or branch chained C alkyl or hydroxyalkyl group, a linear chained or branch chained C alkenyl or hydroxy alkenyl group, or a C cycloalkyl or hydroxy- cycloalkyl group, and at least one of R , R and R is a hydroxyalkyl group, a hydroxy alkenyl group or a hydroxy cycloalkyl group. [Formula 2]
R4~O-[(CHR5)ra-(CH2)π]rOH wherein
R represents a linear chained or branch chained C alkyl group, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, a butyl group, an isobutyl group, a pentyl group, a hexyl group, a heptyl group, and an octyl group,
R represents hydrogen or a linear chained or branch chained C alkyl group,
1-6 m and n are each an integer of f 0 to 3, provided that m+n is 2 or 3, and t is an integer of 1 to 5.
[2] The photoresist stripping composition according to claim 1, wherein an organic amine compound of the formula 1 is at least one selected from the group consisting of monoethanolamine, diethanolamine, triethanolamine, propanolamine, dipropanolamine, tripropanolamine, isopropanolamine, diiso- propanolamine, triisopropanolamine, butanolamine, butylmonoethanolamine, N - methylethanolamine, ethyldiethanolamine, and a mixture thereof.
[3] The photoresist stripping composition according to claim 1, wherein an organic amine compound of the formula 1 is monoethanolamine, JV-methylethanolamine, isopropanolamine, or a mixture thereof.
[4] The photoresist stripping composition according to claim 1, wherein the glycol ether compound of the formula 2 is at least one selected from the group consisting of ethyleneglycol monobutylether, diethyleneglycol monobutylether, triethyleneglycol monobutylether, and a mixture thereof.
[5] The photoresist stripping composition according to claim 1, wherein water- soluble organic solvent is at least one selected from the group consisting of methanol, ethanol, n-propylalcohol, isopropylalcohol, n-butanol, pentanol, ethyleneglycol, propyleneglycol, triethyleneglycol, 2-methyl-l,3-propanediol, 3-methyl-l,3-butanediol, furfurylalcohol, tetrahydrofurfurylalcohol, N - methylformamide, Λf,Λf-dimethylformamide, JV,./V-dimethylacetamide, N - methyl-2-pyrrolidone, γ-butyrolactone, methyllactate, ethyllactate, acetone, methylethylketone, acetylacetone, sulfolane, dimethylsulfoxide, and a mixture thereof.
[6] The photoresist stripping composition according to claim 1, wherein the corrosion inhibitor is a sugar alcohol or an aromatic hydroxy compound.
[7] The photoresist stripping composition according to claim 6, wherein the sugar alcohol is at least one selected from the group consisting of sorbitol, mannitol, threosol, xylitol, and a mixture thereof.
[8] The photoresist stripping composition according to claim 1, wherein the oxide solubilizing agent is the organic acid of the following formula 3, or a salt thereof: [Formula 3]
R6CO2H wherein
R represents hydrogen, a carboxyl group, a linear chained or branch chained C
1-10 alky Jl g torou rp,' a linear chained or branch chained C 2-10 alkeny Jl g torou rp, a C 5-8 cycloalkyl group or a C allyl group, each of which may be substituted with a substituent selected from the group consisting of a halogen, a hydroxyl group, a carboxyl group, and a sulfone group.
[9] The photoresist stripping composition according to claim 8, wherein the organic acid, or a salt thereof is selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, octanoic acid, nonanoic acid, decanoic acid, valeric acid, isovaleric acid, malonic acid, succinic acid, glutaric acid, oxalic acid, maleic acid, fumaric acid, citric acid, phthalic acid, glycolic acid, lactic acid, tartaric acid, gluconic acid, salicylic acid, and a salt thereof.
[10] The photoresist stripping composition according to claim 8, wherein the organic acid, or a salt thereof is oxalic acid, oxalate, or a mixture thereof.
[11] The photoresist stripping composition according to claim 1, wherein the composition further comprises a surfactant, an antifoaming agent, or a mixture thereof as an additive. [12] A process for preparing a semiconductor device, comprising: i) a step of forming a metal film or an oxide film on a substrate, ii) a step of forming a photoresist film on the metal film or the oxide film, iii) forming a pattern on the photoresist film by exposure and development processes, iv) a step of etching the metal film or the oxide film in the region of the formed photoresist film pattern, and v) a step of removing the photoresist film pattern using a photoresist stripping composition according to any one of claims 1 to 11. [13] A semiconductor device prepared by the process of claim 12.
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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG158816A1 (en) * 2008-07-14 2010-02-26 Air Prod & Chem Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful thereof
WO2010118916A1 (en) 2009-04-16 2010-10-21 Basf Se Organic photoresist stripper composition
JP2012500421A (en) * 2009-08-25 2012-01-05 エルティーシー カンパニー リミテッド Photoresist stripping composition for manufacturing LCD
JP2012118502A (en) * 2010-12-02 2012-06-21 Ltc Co Ltd Photoresist stripping solution composition for manufacturing liquid crystal display, including primary alkanol amine
US8883701B2 (en) 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
US9223221B2 (en) 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
JP2019508520A (en) * 2016-03-03 2019-03-28 エルジー・ケム・リミテッド Cleaning composition for liquid crystal alignment film and method for producing liquid crystal alignment film using the same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI518467B (en) * 2013-11-15 2016-01-21 達興材料股份有限公司 Photoresist stripper composition, electronic device and method of fabricating the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990062480A (en) * 1997-12-03 1999-07-26 이부섭 Resist stripping liquid, resist stripping method using the same, resist stripping liquid regeneration device, and resist stripping liquid management device
KR20010030460A (en) * 1999-09-28 2001-04-16 오오히라 아키라 Resist stripping composition
KR20040040513A (en) * 2002-11-07 2004-05-13 동우 화인켐 주식회사 Photoresist and polymer remover composition, and exfoliation and the washing method of a semiconductor element used it
KR20050002573A (en) * 2003-06-26 2005-01-07 동우 화인켐 주식회사 Photoresist stripper composition, and exfoliation method of a photoresist using it

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990062480A (en) * 1997-12-03 1999-07-26 이부섭 Resist stripping liquid, resist stripping method using the same, resist stripping liquid regeneration device, and resist stripping liquid management device
KR20010030460A (en) * 1999-09-28 2001-04-16 오오히라 아키라 Resist stripping composition
KR20040040513A (en) * 2002-11-07 2004-05-13 동우 화인켐 주식회사 Photoresist and polymer remover composition, and exfoliation and the washing method of a semiconductor element used it
KR20050002573A (en) * 2003-06-26 2005-01-07 동우 화인켐 주식회사 Photoresist stripper composition, and exfoliation method of a photoresist using it

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG158816A1 (en) * 2008-07-14 2010-02-26 Air Prod & Chem Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful thereof
US8580656B2 (en) 2008-07-14 2013-11-12 Air Products And Chemicals, Inc. Process for inhibiting corrosion and removing contaminant from a surface during wafer dicing and composition useful therefor
WO2010118916A1 (en) 2009-04-16 2010-10-21 Basf Se Organic photoresist stripper composition
JP2012500421A (en) * 2009-08-25 2012-01-05 エルティーシー カンパニー リミテッド Photoresist stripping composition for manufacturing LCD
TWI426362B (en) * 2009-08-25 2014-02-11 Ltc Co Ltd A photoresist stripping composition for manufacturing lcd
US9360761B2 (en) 2009-08-25 2016-06-07 Ltc Co., Ltd. Photoresist stripping composition for manufacturing LCD
US8883701B2 (en) 2010-07-09 2014-11-11 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
US9328318B2 (en) 2010-07-09 2016-05-03 Air Products And Chemicals, Inc. Method for wafer dicing and composition useful thereof
JP2012118502A (en) * 2010-12-02 2012-06-21 Ltc Co Ltd Photoresist stripping solution composition for manufacturing liquid crystal display, including primary alkanol amine
US9223221B2 (en) 2012-03-16 2015-12-29 Basf Se Photoresist stripping and cleaning composition, method of its preparation and its use
JP2019508520A (en) * 2016-03-03 2019-03-28 エルジー・ケム・リミテッド Cleaning composition for liquid crystal alignment film and method for producing liquid crystal alignment film using the same
US11008537B2 (en) 2016-03-03 2021-05-18 Lg Chem, Ltd. Cleaning composition for liquid crystal alignment layer and manufacturing method of liquid crystal alignment layer using the same

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