KR20090080206A - Photoresist stripper composition and exfoliation method of a photoresist using the same - Google Patents

Abstract

A photoresist stripping composition and a stripping method using the same are provided to eliminate remaining photoresist and photoresist residue without the corrosion of a thin film. A photoresist stripping composition is composed of an alkali compound, water, aromatic polyhydric alcohol and aromatic carboxylic acid or its ester compound. The aromatic polyhydric alcohol has only -OH groups. The aromatic carboxylic acid includes the -OH groups. A ratio of the aromatic polyhydric alcohol and the aromatic carboxylic acid or its ester compound is 1:0.1 ~ 1:10. The alkali compound comprises one or more compounds selected from the group consisting of mono-, di-, tri-ethanol amine, mono-, di-, tri-propanol amine, mono-, di-, tri-isopropanol amine, butanol amine, n-butyl ethanol amine, n-methyl ethanol amine, n-ethyl ethanol amine, tri-isopropanol amine, 2-(2-aminoethoxy)ethanol, tetra-methyl ammonium hydroxide, tetra-ethyl ammonium hydroxide, tetra-propyl ammonium hydroxide, tetra-butyl ammonium hydroxide, mono-methyl tri-propyl ammonium hydroxide, (2-hydroxyethyl)tripropyl ammonium hydroxide and (1-hydroxypropyl) trimethyl ammonium hydroxide.

Description

Photoresist stripping composition and photoresist stripping method using the same {PHOTORESIST STRIPPER COMPOSITION AND EXFOLIATION METHOD OF A PHOTORESIST USING THE SAME}

The present invention relates to a composition for peeling photoresist and a method for peeling a photoresist using the same, and more particularly, to an aromatic carboxylic acid or an ester compound thereof containing an aromatic polyhydric alcohol having an OH group and an OH group in an alkaline aqueous solution. It relates to a photoresist stripping composition and a peeling method of a photoresist using the same. The composition of the present invention is used to peel photoresist, photoresist residue, photoresist cured through ion implantation process and the like from a substrate in the manufacturing process of a flat panel display or a semiconductor device.

The manufacture of a flat panel display or a semiconductor device includes a process of forming a metal film or an insulating film layer, a process of forming a photoresist layer, an exposure process of transferring a mask pattern to the photoresist, an etching process of etching a film along the pattern, and a photoresist. It proceeds to the peeling process to remove. In recent years, as the wiring spacing has narrowed, dry etching and high temperature ashing processes using reactive gases have become important processes in the semiconductor process, and some residual residues caused by these processes, that is, polymers, are strongly applied to the insulating film or the metal film. The phenomenon of adhesion appears. Such photoresist residues, i.e., polymers, are usually removed with a photoresist stripper.

In addition, the ion implantation process, which forms the source / drain at the front of the production line during the semiconductor process, is a process in which ions of group 3 or 5 are accelerated into an electric field and injected into the silicon to have energy that is large enough to penetrate the surface of silicon. It is a process performed for the purpose of partially changing the electrical properties such as conductivity, threshold voltage by doping impurity ions.

To form the source / drain regions, a high dose amount of ion implantation is performed, thereby accelerating the curing of the upper portion of the photoresist and thus removing the photoresist is very difficult. When the high temperature ashing treatment is performed to remove these photoresists, the volume of the photoresist is reduced but the curing of the photoresist film is intensified, and the polymer is formed by the puffing action due to the pressure increase inside the photoresist. Is difficult.

The photoresist and the photoresist residue remaining after the plasma etching or the high temperature ashing process, the photoresist cured after the ion implantation, and the peeling solution for removing the polymer formed by the puffing action are composed of an amine release agent and a hydroxyl amine compound. A composition has been proposed. For example, US Pat. No. 4,617,251 discloses certain amine compounds [eg, 2- (2-aminoethoxy) ethanol, 2- (2-aminoethylamino) ethanol, or mixtures thereof) and polar solvents such as N -Methyl-2-pyrrolidone (NMP), tetrahydrofurfuryl alcohol, dimethylglutarate, sulfolane, gamma-butyllactone (GBL), N, N-dimethylacetamide and mixtures thereof) A topographic photoresist stripping composition is disclosed, and US Pat. No. 5,279,771 discloses a stripping composition comprising hydroxylamine, alkanolamine and any polar solvent.

However, the amine-based peeling solution does not completely remove the photoresist cured after plasma etching, high temperature ashing, or ion implantation, or has a serious problem of corrosion of a metal film such as aluminum.

In addition, a photoresist composition composed of an alkali compound, a carboxylic acid, water, and the like separately from the amine peeling solution as described above has been proposed. For example, Japanese Patent Laid-Open No. 11-125916 discloses a release agent composed of amine, water, α-Hydroxycarbonic acid, an organic solvent, and the like, and Japanese Patent Laid-Open No. 11-174690 discloses alkanolamines. The sidewall removal liquid which consists of organic acid, and water is disclosed. In addition, Korean Patent Publication No. 10-0503702 contains at least one basic compound selected from carboxyl group-containing acidic compounds, alkanolamines, and certain quaternary ammonium hydroxides, sulfur-containing anticorrosive agents, and water, and the pH is 3.5. A photoresist stripper of ˜5.5 is disclosed.

However, these compositions have problems such as plasma etching or high temperature ashing during the highly integrated semiconductor device fabrication process, poor removal of polymers and cured photoresist after ion implantation, or corrosion of insulating films such as metal films or polysilicon. Therefore, a higher performance release agent is required.

The present invention is to meet the technical requirements as described above, and to effectively prevent photoresist and photoresist residues remaining after hard baking, plasma etching, and high temperature ashing during the film formation process in the manufacture of flat panel displays or semiconductor devices. The photoresist stripping composition can be used not only for the stripping process to be removed, but also for the stripping process of the cured photoresist after the ion implantation step of doping the impurities to form source / drain regions at the front end of the production line. And it aims to provide the peeling method of the photoresist using this.

In order to achieve the above object, one aspect of the present invention is (a) an alkali compound, (b) water, (c) an aromatic polyhydric alcohol having only OH groups, and (d) an aromatic carboxylic acid or ester thereof It provides a composition for peeling photoresist comprising a compound.

According to one embodiment, the aromatic polyhydric alcohol having only (c) OH group and the aromatic carboxylic acid or ester compound thereof containing (d) OH group are included in a ratio of 1: 0.1 to 1:10.

According to another embodiment, the (a) alkali compound is mono-, di-, or tri-ethanolamine, mono-, di-, or tri-propanolamine, mono-, di-, or tri-isopropanolamine , Butanolamine, N-butylethanolamine, N-methylethanolamine, N-ethylethanolamine, triisopropanolamine, 2- (2-aminoethoxy) ethanol, tetramethylammonium hydroxide, tetraethylammonium hydroxide , Tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, monomethyltripropylammonium hydroxide, (2-hydroxyethyl) tripropylammonium hydroxide and (1-hydroxypropyl) trimethylammonium hydroxide 1 type, or 2 or more types of mixtures chosen from the group which consists of these.

According to another embodiment, the (c) aromatic polyhydric alcohol having only an OH group is catechol, resorcinol, pyrogallol or a mixture of two or more thereof.

According to another embodiment, the (d) aromatic carboxylic acid or ester compound thereof containing OH group is methylgallate, gallic acid, benzoic acid, salicylic acid or a mixture of two or more thereof.

According to another embodiment, the composition may further comprise a water-soluble polar solvent compound.

In this case, the water-soluble polar solvent compound is N-methylpyrrolidone (NMP), 1,3-dimethyl-2-imidazolidinone (DMI), dimethyl sulfoxide (DMSO), dimethylacetamide (DMAc), dimethyl Formamide (DMF), tetrahydrofurfuryl alcohol, isophorone, diethyl adipate, dimethylglutarate, sulfolane, gamma-butyllactone (GBL) or mixtures of two or more thereof.

According to another embodiment, the composition may further include an alkylene glycol alkyl ether compound.

The alkylene glycol alkyl ether compounds include ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, propylene Glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate or mixtures of two or more thereof.

According to another embodiment, the composition may further comprise a straight chain or chain compound comprising a carbonyl group or carboxyl group.

The linear or chain compound including the carbonyl group or carboxyl group may be glycolic acid, lactic acid, succinic acid, malic acid, acetic acid, tartaric acid, or a mixture of two or more thereof.

According to another embodiment, the composition may further comprise a straight chain polyhydric alcohol.

The linear polyhydric alcohol may be sorbitol, xylitol, mannitol, threazole, glycerol, glycol, erythritol or a mixture of two or more thereof.

According to another embodiment, the composition may further comprise a compound comprising a mercapto group.

In this case, the compound containing the mercapto group may be ammonium thiosulfate, thioglycerol, thioglycolic acid, thioacetic acid, thiosalicylic acid or a mixture of two or more thereof.

Another aspect of the present invention provides a method for removing photoresist by depositing, spraying, or depositing and spraying for 30 seconds to 40 minutes at a temperature of 10 to 100 ° C using the composition for peeling photoresist described above.

The composition provided by the present invention can be used in a peeling process to effectively remove photoresist and photoresist residues remaining after hard baking, plasma etching, and high temperature ashing during the film formation process in the manufacture of flat panel displays or semiconductor devices without corrosion of film quality. In addition, it has an excellent effect on the peeling process of the cured photoresist after the ion implantation process of doping the impurities to form the source / drain region in the front end of the production line.

Hereinafter, the configuration and operation of the present invention will be described in detail.

The present invention relates to a photoresist stripping composition comprising an aromatic polyhydric alcohol containing only an OH group and an aromatic carboxylic acid or an ester compound thereof containing an OH group in an alkaline aqueous solution.

The composition of the present invention may further include a water-soluble polar solvent compound, an alkylene glycol alkyl ether compound, a linear or chain compound containing a carbonyl group or a carboxyl group, a linear polyhydric alcohol, a compound containing a mercapto group, and the like. .

Specifically, the peeling composition of the present invention comprises (a) an alkali compound, (b) water, (c) an aromatic polyhydric alcohol having only OH groups, and (d) an aromatic carboxylic acid or ester compound thereof containing an OH group. do. That is, in the present invention, the alkaline aqueous solution comprises an alkali compound and water.

The alkali compound is preferably an alkanolamine compound selected from the group consisting of primary aminoalcohol compounds, secondary aminoalcohol compounds and tertiary aminoalcohol compounds or certain quaternary ammonium hydroxide compounds or mixtures thereof. Specific examples thereof include mono-, di-, or tri-ethanolamine, mono-, di-, or tri-propanolamine, mono-, di-, or tri-isopropanolamine, butanolamine, N-butylethanolamine, N -Methylethanolamine, N-ethylethanolamine, triisopropanolamine, 2- (2-aminoethoxy) ethanol, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium Preferred are hydroxide, monomethyltripropylammonium hydroxide, (2-hydroxyethyl) tripropylammonium hydroxide, (1-hydroxypropyl) trimethylammonium hydroxide or a mixture of two or more thereof, Monoethanolamine, N-methylethanolamine, isopropanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, 2- (2-aminoethoxy) ethanol or mixtures of two or more thereof are particularly preferable. The.

In the peeling composition of the present invention, the content of the alkali compound is preferably 5 to 90% by weight, and more preferably 40 to 90% by weight based on the total weight of the composition. At this time, when the alkali compound is included in less than 5% by weight, the peeling effect on the cured photoresist is inferior, and when it is included in excess of 90% by weight, it is disadvantageous in terms of environmental, processing cost, and removal of the polymer. .

Although water contained in the peeling composition of this invention is not specifically limited, It is preferable to use deionized distilled water, especially deionized distilled water whose specific resistance value is 18 MPa / cm as water for a semiconductor process.

The water content is preferably 1 to 40% by weight based on the total weight of the composition. At this time, when water is less than 1% by weight, the activity of the compound which serves to peel off the cured or polymer-denatured photoresist decreases, and the peeling effect is lowered. A relatively low content of other compounds may cause the peeling effect to drop.

In the peeling composition of the present invention, any aromatic polyhydric alcohol having only an OH group can be used as long as it is an aromatic polyhydric alcohol in which nothing other than an OH group is substituted as a functional group. Specifically, catechol, resorcinol, pyrogallol, or a mixture of two or more thereof is preferable.

In the peeling composition of the present invention, the content of the aromatic polyhydric alcohol having only the OH group is preferably 0.1 to 10% by weight based on the total weight of the composition. At this time, when the aromatic polyhydric alcohol is included in less than 0.1% by weight, the peeling effect on the cured photoresist is inferior, and when it is included in an amount of more than 10% by weight, it is disadvantageous in terms of environment, processing cost, and polymer removal. .

Moreover, in the peeling composition of this invention, although it does not specifically limit as aromatic carboxylic acid or its ester compound containing OH group, Methyl gallate, a gallic acid, benzoic acid, salicylic acid, or mixtures of 2 or more types thereof, etc. This is preferred.

The content of the aromatic carboxylic acid or ester compound thereof containing such an OH group is preferably 0.1 to 10% by weight based on the total weight of the composition. At this time, when the aromatic carboxylic acid or its ester compound is included in less than 0.1% by weight, it may cause corrosion of the metal film such as aluminum, and when included in excess of 10% by weight may be a cost burden of the composition as well as phase separation Can cause.

On the other hand, in the peeling composition of the present invention, the aromatic polyhydric alcohol having only the OH group and the aromatic carboxylic acid or its ester compound containing the OH group are preferably mixed in a ratio of 1: 0.1 to 1:10, 1 It is more preferable to mix in the ratio of: 0.2-1: 5.

At this time, when the aromatic carboxylic acid containing the OH group or its ester compound is less than 0.1 times mixed with the aromatic polyhydric alcohol having only the OH group, it causes corrosion of the metal film such as aluminum, and the aromatic polyvalent having only the OH group. If the aromatic carboxylic acid or ester compound thereof containing OH group relative to alcohol is included in an amount of more than 10 times, it may be disadvantageous in terms of photoresist and polymer removal ability as well as cause phase separation.

The water-soluble polar solvent compound which may be additionally included in the peeling composition of the present invention is a solvent having excellent solubility in the polymer resin. For example, N-methylpyrrolidone (NMP), 1,3-dimethyl-2-imidazolidinone (DMI), dimethylsulfoxide (DMSO), dimethylacetamide (DMAc), dimethylformamide (DMF), Tetrahydrofurfuryl alcohol, isophorone, diethyl adipate, dimethyl glutarate, sulfolane, gamma-butyllactone (GBL) and mixtures of two or more thereof are preferred, and N-methylpyrrolidone (NMP) , Dimethyl sulfoxide (DMSO), gamma-butyllactone (GBL), dimethylacetamide (DMAc) or mixtures of two or more thereof, and the like are particularly preferred.

The content of the water-soluble polar solvent compound in the peeling composition of the present invention is preferably 10 to 50% by weight based on the total weight of the composition. At this time, when the water-soluble polar solvent compound is contained in less than 10% by weight, the dissolving ability of the composition for peeling to the cured or polymer-modified photoresist is lowered, when containing more than 50% by weight other compounds exhibiting a peeling effect The content of is relatively low, causing the peeling effect to fall.

The alkylene glycol alkyl ether compounds which may be additionally included in the peeling composition of the present invention are not particularly limited, but are ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, ethylene glycol monobutyl ether , Diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate or mixtures of two or more thereof are preferred. And diethylene glycol monobutyl ether, triethylene glycol monobutyl ether, ethylene glycol monomethyl ether, or mixtures of two or more thereof.

The content of the alkylene glycol alkyl ether compound in the peeling composition of the present invention is preferably 10 to 50% by weight based on the total weight of the composition. At this time, when the alkylene glycol alkyl ether compound is contained in less than 10% by weight, the problem of lowering the solubility of the photoresist cured or polymer-modified due to the dry etching, ashing process occurs, 50% by weight When included in excess, it causes phase separation.

The linear or chain compound including a carbonyl group or carboxyl group which may be additionally included in the present peeling composition is not particularly limited, but glycolic acid, lactic acid, succinic acid, malic acid, acetic acid, tartaric acid, or a mixture of two or more thereof is preferable.

In the peeling composition of the present invention, the linear or chain compound containing the carbonyl group or carboxyl group is preferably 0.1 to 10% by weight based on the total weight of the composition. At this time, when the linear or chain compound containing the carbonyl group or the carboxyl group is included in less than 0.1% by weight, the polymer resulting from the dry etching or ashing process is deteriorated in the ability to oxidize and remove from the metal film or the insulating film, 10 When included in an amount greater than%, the photoresist decomposition ability by the water-soluble organic amine in the stripping solution is not only reduced, but also causes corrosion of the metal film or the insulating film.

The linear polyhydric alcohol compound which may be additionally included in the peeling composition of the present invention is a component for preventing corrosion of the metal film, but is not particularly limited, but sorbitol, xylitol, mannitol, threazole, glycerol, glycol, erythritol or their 2 or more types of mixtures are preferable.

In the peeling composition of the present invention, it is preferable that the linear polyhydric alcohol compound is used in an amount of 0.01 to 10% by weight based on the total weight of the composition. In this case, when the linear polyhydric alcohol compound is used at less than 0.1% by weight, it may cause corrosion of the film. When used in excess of 10% by weight, the polymer removal ability is reduced or the burden of manufacturing cost of the composition is high. It is considered to be disadvantageous in terms of availability.

The compound containing a mercapto group that may be additionally included in the peeling composition of the present invention is not particularly limited, but is not particularly limited to ammonium thiosulfate, thioglycerol, thioglycolic acid, thioacetic acid, thiosalicylic acid, or a mixture of two or more thereof. Etc. are preferable.

In the peeling composition of the present invention, the content of the compound containing the mercapto group is preferably used in 0.01 to 5% by weight based on the total weight of the composition. At this time, when the compound containing the mercapto group is included in less than 0.01% by weight, it causes corrosion of a metal film or insulating film such as tungsten, and when included in excess of 5% by weight, a photoresist using an alkali compound or an organic solvent and Weakens the polymer's removability.

The peeling composition of the present invention described above may be prepared by mixing the above-mentioned compounds in a predetermined amount advantageously, respectively, the mixing method is not particularly limited and various known methods may be applied.

The present invention also provides a peeling method that can effectively remove the photoresist remaining after hard baking, plasma etching, and hot ashing, and the cured photoresist after the ion implantation process.

The above peeling method can be carried out by methods commonly known in the art, and a good result can be obtained as long as the peeling solution can be brought into contact with a substrate having a cured or polymer-modified photoresist.

As the peeling method according to the present invention, for example, deposition, spraying, or a method using deposition and spraying is applied. When delamination by spraying, spraying, or immersion and spraying, the temperature is usually 10 to 100 ° C., preferably 20 to 80 ° C., and the immersion, spray, or immersion and spraying time is usually 30 seconds to 40 minutes. Preferably, 1 to 20 minutes, but the conditions are not strictly applied in the present invention, it can be carried out in easy and suitable conditions by those skilled in the art.

Specifically, the peeling method of the photoresist according to the present invention, i) forming a photoresist film on the substrate; Ii) selectively exposing the photoresist film; Iii) developing the photoresist film after the exposure to form a photoresist pattern; Iii) etching the substrate using the photoresist pattern as a mask; Iii) ashing the photoresist pattern; And iv) removing the photoresist residue after the ashing by dipping, spraying, or dipping and spraying for 30 seconds to 40 minutes at a temperature of 10 to 100 ° C. using the photoresist stripping composition of the present invention. It can be made, including the step.

Hereinafter, the present invention will be described in more detail with reference to Examples and Test Examples. However, the scope of the present invention is not limited by the following examples and test examples.

Example  1-6 and Comparative example  1-6: Photoresist  Preparation of Peeling Composition

By mixing the composition and content as shown in Table 1 and Table 2 to prepare a photoresist stripping composition of Examples 1-6 and Comparative Examples 1-6.

MEA: Monoethanolamine

MIPA: monoisopropanolamine

AAEE: 2- (2-aminoethoxy) ethanol

N-MEA: N-methylethanolamine

TMAH: Tetramethylammonium Hydroxide

NMP: N-methylpyrrolidine

BDG: Diethylene Glycol Monobutyl Ether

Test Example  1: Peel Ability and Corrosion Test

(1) Peeling ability and corrosion test

After the hardened photoresist film and the residue residues deposited after plasma etching or high temperature ashing were deposited on the metal film or the insulating film for 20 minutes, the sample was immersed in a peeling solution at a temperature of 65 ° C., and the specimen was removed from the peeling solution and rinsed with ultrapure water for 1 minute. After drying with nitrogen gas. In addition, the scanning electron microscope was used to evaluate the removal of the cured photoresist film and residual residue and the corrosion of the metal film and the insulating film exposed to the chemical liquid. Removability and corrosion evaluation was specified based on the following criteria, the results are shown in Table 3 below.

Peel Ability Evaluation Criteria

O: When polymer remaining on or around metal, pad, via hole or surface is completely removed

△: 70% or more of polymer remaining around or on the surface of metal, pad, via hole

X: Almost no polymer remaining around or on metal, pad, via hole or surface

Corrosion Evaluation Criteria

O: No corrosion on metal, upper and lower sides of pad

(Triangle | delta): When there is partial corrosion in metal, the upper and lower parts of a pad, and a side surface

X: When there is much corrosion on metal, upper and lower sides of the pad

From the results in Table 3, Examples 1 to 1 containing both aromatic polyhydric alcohols having only OH groups and aromatic carboxylic acid compounds containing OH groups in the alkaline aqueous solution and containing them in a ratio of 1: 0.1 to 1:10 It can be seen that the composition of 6 shows better results in both peelability and corrosiveness than the compositions of Comparative Examples that are not.

Claims (16)

(a) alkaline compounds, (b) water, (c) aromatic polyhydric alcohols having only OH groups, and (d) Aromatic carboxylic acid or ester compound thereof containing OH group Photoresist stripping composition comprising a. The method according to claim 1, wherein the aromatic polyhydric alcohol having only (C) OH group and the aromatic carboxylic acid or ester compound thereof containing (D) OH group is contained in a ratio of 1: 0.1 to 1:10. Photoresist stripping composition. The method of claim 1, wherein the (a) alkali compound is mono-, di-, or tri-ethanolamine, mono-, di-, or tri-propanolamine, mono-, di-, or tri-isopropanolamine, butanolamine , N-butylethanolamine, N-methylethanolamine, N-ethylethanolamine, triisopropanolamine, 2- (2-aminoethoxy) ethanol, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropyl From the group consisting of ammonium hydroxide, tetrabutylammonium hydroxide, monomethyltripropylammonium hydroxide, (2-hydroxyethyl) tripropylammonium hydroxide and (1-hydroxypropyl) trimethylammonium hydroxide It is 1 type or 2 or more types of mixtures which are selected, The composition for photoresist peeling characterized by the above-mentioned. The composition of claim 1, wherein the (c) aromatic polyhydric alcohol having only an OH group is catechol, resorcinol, pyrogallol or a mixture of two or more thereof. The composition of claim 1, wherein the aromatic carboxylic acid or ester compound thereof containing (d) OH is methylgallate, gallic acid, benzoic acid, salicylic acid or a mixture of two or more thereof. . The composition for peeling photoresist according to claim 1, further comprising a water-soluble polar solvent compound. The method according to claim 6, wherein the water-soluble polar solvent compound is N-methylpyrrolidone (NMP), 1,3-dimethyl-2-imidazolidinone (DMI), dimethyl sulfoxide (DMSO), dimethylacetamide (DMAc) , Dimethylformamide (DMF), tetrahydrofurfuryl alcohol, isophorone, diethyl adipate, dimethyl glutarate, sulfolane, gamma-butyllactone (GBL), or a mixture of two or more thereof. Resist stripping composition. The composition for peeling photoresist according to claim 1, further comprising an alkylene glycol alkyl ether compound. The method of claim 8, wherein the alkylene glycol alkyl ether compounds are ethylene glycol monomethyl ether, diethylene glycol monomethyl ether, triethylene glycol monomethyl ether, ethylene glycol monobutyl ether, diethylene glycol monobutyl ether, triethylene Glycol monobutyl ether, propylene glycol monomethyl ether, dipropylene glycol monomethyl ether, tripropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate or a mixture of two or more thereof. The composition for peeling photoresist according to claim 1, further comprising a linear or chain compound comprising a carbonyl group or a carboxyl group. The composition of claim 10, wherein the linear or chain compound comprising a carbonyl group or a carboxyl group is glycolic acid, lactic acid, succinic acid, malic acid, acetic acid, tartaric acid, or a mixture of two or more thereof. The composition for peeling photoresist according to claim 1, further comprising a straight-chain polyhydric alcohol. The composition of claim 12, wherein the linear polyhydric alcohol is sorbitol, xylitol, mannitol, threazole, glycerol, glycol, erythritol, or a mixture of two or more thereof. The composition for peeling photoresist according to claim 1, further comprising a compound containing a mercapto group. The composition of claim 14, wherein the compound containing a mercapto group is ammonium thiosulfate, thioglycerol, thioglycolic acid, thioacetic acid, thiosalicylic acid or a mixture of two or more thereof. A method for removing photoresist by depositing, spraying, or depositing and spraying for 30 seconds to 40 minutes at a temperature of 10 to 100 ° C. using the composition for peeling photoresist according to any one of claims 1 to 15.