KR20060084809A - 에칭액과 보급액 및 이것을 사용한 도체 패턴의 형성 방법 - Google Patents
에칭액과 보급액 및 이것을 사용한 도체 패턴의 형성 방법 Download PDFInfo
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- KR20060084809A KR20060084809A KR1020060005949A KR20060005949A KR20060084809A KR 20060084809 A KR20060084809 A KR 20060084809A KR 1020060005949 A KR1020060005949 A KR 1020060005949A KR 20060005949 A KR20060005949 A KR 20060005949A KR 20060084809 A KR20060084809 A KR 20060084809A
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- 238000000034 method Methods 0.000 title claims abstract description 50
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
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- 239000002253 acid Substances 0.000 claims abstract description 14
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- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- AZFNGPAYDKGCRB-XCPIVNJJSA-M [(1s,2s)-2-amino-1,2-diphenylethyl]-(4-methylphenyl)sulfonylazanide;chlororuthenium(1+);1-methyl-4-propan-2-ylbenzene Chemical compound [Ru+]Cl.CC(C)C1=CC=C(C)C=C1.C1=CC(C)=CC=C1S(=O)(=O)[N-][C@@H](C=1C=CC=CC=1)[C@@H](N)C1=CC=CC=C1 AZFNGPAYDKGCRB-XCPIVNJJSA-M 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 229960001716 benzalkonium Drugs 0.000 description 2
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
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- 150000001879 copper Chemical class 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
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- IDNHOWMYUQKKTI-UHFFFAOYSA-M lithium nitrite Chemical compound [Li+].[O-]N=O IDNHOWMYUQKKTI-UHFFFAOYSA-M 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 235000010289 potassium nitrite Nutrition 0.000 description 2
- 239000004304 potassium nitrite Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- VWDWKYIASSYTQR-UHFFFAOYSA-N sodium nitrate Chemical compound [Na+].[O-][N+]([O-])=O VWDWKYIASSYTQR-UHFFFAOYSA-N 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 2
- LPMBTLLQQJBUOO-KTKRTIGZSA-N (z)-n,n-bis(2-hydroxyethyl)octadec-9-enamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)N(CCO)CCO LPMBTLLQQJBUOO-KTKRTIGZSA-N 0.000 description 1
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 description 1
- 229940054266 2-mercaptobenzothiazole Drugs 0.000 description 1
- 229940006193 2-mercaptoethanesulfonic acid Drugs 0.000 description 1
- SLAMLWHELXOEJZ-UHFFFAOYSA-N 2-nitrobenzoic acid Chemical compound OC(=O)C1=CC=CC=C1[N+]([O-])=O SLAMLWHELXOEJZ-UHFFFAOYSA-N 0.000 description 1
- IQUPABOKLQSFBK-UHFFFAOYSA-N 2-nitrophenol Chemical compound OC1=CC=CC=C1[N+]([O-])=O IQUPABOKLQSFBK-UHFFFAOYSA-N 0.000 description 1
- JDGZXSVPVMNXMW-UHFFFAOYSA-N 2-sulfanylbenzenesulfonic acid Chemical compound OS(=O)(=O)C1=CC=CC=C1S JDGZXSVPVMNXMW-UHFFFAOYSA-N 0.000 description 1
- RVBUGGBMJDPOST-UHFFFAOYSA-N 2-thiobarbituric acid Chemical compound O=C1CC(=O)NC(=S)N1 RVBUGGBMJDPOST-UHFFFAOYSA-N 0.000 description 1
- OBDVFOBWBHMJDG-UHFFFAOYSA-N 3-mercapto-1-propanesulfonic acid Chemical compound OS(=O)(=O)CCCS OBDVFOBWBHMJDG-UHFFFAOYSA-N 0.000 description 1
- RYYXDZDBXNUPOG-UHFFFAOYSA-N 4,5,6,7-tetrahydro-1,3-benzothiazole-2,6-diamine;dihydrochloride Chemical compound Cl.Cl.C1C(N)CCC2=C1SC(N)=N2 RYYXDZDBXNUPOG-UHFFFAOYSA-N 0.000 description 1
- HWTDMFJYBAURQR-UHFFFAOYSA-N 80-82-0 Chemical compound OS(=O)(=O)C1=CC=CC=C1[N+]([O-])=O HWTDMFJYBAURQR-UHFFFAOYSA-N 0.000 description 1
- XUJNEKJLAYXESH-UWTATZPHSA-N D-Cysteine Chemical compound SC[C@@H](N)C(O)=O XUJNEKJLAYXESH-UWTATZPHSA-N 0.000 description 1
- 229930195710 D‐cysteine Natural products 0.000 description 1
- PDQAZBWRQCGBEV-UHFFFAOYSA-N Ethylenethiourea Chemical compound S=C1NCCN1 PDQAZBWRQCGBEV-UHFFFAOYSA-N 0.000 description 1
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- VLCDUOXHFNUCKK-UHFFFAOYSA-N N,N'-Dimethylthiourea Chemical compound CNC(=S)NC VLCDUOXHFNUCKK-UHFFFAOYSA-N 0.000 description 1
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- AOMUHOFOVNGZAN-UHFFFAOYSA-N N,N-bis(2-hydroxyethyl)dodecanamide Chemical compound CCCCCCCCCCCC(=O)N(CCO)CCO AOMUHOFOVNGZAN-UHFFFAOYSA-N 0.000 description 1
- QZXSMBBFBXPQHI-UHFFFAOYSA-N N-(dodecanoyl)ethanolamine Chemical compound CCCCCCCCCCCC(=O)NCCO QZXSMBBFBXPQHI-UHFFFAOYSA-N 0.000 description 1
- OTGQIQQTPXJQRG-UHFFFAOYSA-N N-(octadecanoyl)ethanolamine Chemical compound CCCCCCCCCCCCCCCCCC(=O)NCCO OTGQIQQTPXJQRG-UHFFFAOYSA-N 0.000 description 1
- KQJQICVXLJTWQD-UHFFFAOYSA-N N-Methylthiourea Chemical compound CNC(N)=S KQJQICVXLJTWQD-UHFFFAOYSA-N 0.000 description 1
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- 150000007513 acids Chemical class 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000013556 antirust agent Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 229960002233 benzalkonium bromide Drugs 0.000 description 1
- 229960000686 benzalkonium chloride Drugs 0.000 description 1
- KHSLHYAUZSPBIU-UHFFFAOYSA-M benzododecinium bromide Chemical compound [Br-].CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 KHSLHYAUZSPBIU-UHFFFAOYSA-M 0.000 description 1
- CADWTSSKOVRVJC-UHFFFAOYSA-N benzyl(dimethyl)azanium;chloride Chemical compound [Cl-].C[NH+](C)CC1=CC=CC=C1 CADWTSSKOVRVJC-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- ZNEWHQLOPFWXOF-UHFFFAOYSA-N coenzyme M Chemical compound OS(=O)(=O)CCS ZNEWHQLOPFWXOF-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229940031957 lauric acid diethanolamide Drugs 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- XGZOMURMPLSSKQ-UHFFFAOYSA-N n,n-bis(2-hydroxyethyl)octadecanamide Chemical compound CCCCCCCCCCCCCCCCCC(=O)N(CCO)CCO XGZOMURMPLSSKQ-UHFFFAOYSA-N 0.000 description 1
- VBEGHXKAFSLLGE-UHFFFAOYSA-N n-phenylnitramide Chemical compound [O-][N+](=O)NC1=CC=CC=C1 VBEGHXKAFSLLGE-UHFFFAOYSA-N 0.000 description 1
- KBJMLQFLOWQJNF-UHFFFAOYSA-N nickel(ii) nitrate Chemical compound [Ni+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O KBJMLQFLOWQJNF-UHFFFAOYSA-N 0.000 description 1
- 150000002826 nitrites Chemical class 0.000 description 1
- BOWVQLFMWHZBEF-KTKRTIGZSA-N oleoyl ethanolamide Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)NCCO BOWVQLFMWHZBEF-KTKRTIGZSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- XAEFZNCEHLXOMS-UHFFFAOYSA-M potassium benzoate Chemical compound [K+].[O-]C(=O)C1=CC=CC=C1 XAEFZNCEHLXOMS-UHFFFAOYSA-M 0.000 description 1
- 235000010333 potassium nitrate Nutrition 0.000 description 1
- 239000004323 potassium nitrate Substances 0.000 description 1
- 159000000001 potassium salts Chemical class 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 235000010344 sodium nitrate Nutrition 0.000 description 1
- 239000004317 sodium nitrate Substances 0.000 description 1
- PYTISYCTLQTCTM-UHFFFAOYSA-N sodium;2-sulfanylethanesulfonic acid Chemical compound [Na].OS(=O)(=O)CCS PYTISYCTLQTCTM-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- UVZICZIVKIMRNE-UHFFFAOYSA-N thiodiacetic acid Chemical compound OC(=O)CSCC(O)=O UVZICZIVKIMRNE-UHFFFAOYSA-N 0.000 description 1
- RSPCKAHMRANGJZ-UHFFFAOYSA-N thiohydroxylamine Chemical compound SN RSPCKAHMRANGJZ-UHFFFAOYSA-N 0.000 description 1
- NJRXVEJTAYWCQJ-UHFFFAOYSA-N thiomalic acid Chemical compound OC(=O)CC(S)C(O)=O NJRXVEJTAYWCQJ-UHFFFAOYSA-N 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
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Abstract
Description
조성 | Ni-Cr 합금의 용해시간(구리 박의 중량변화) | Pd의 용해시간 (구리 박의 중량변화) | |
실시예 1 | 염산(염화수소로서):20질량% 황산:20질량% 아질산나트륨(아질산이온으로서):0.1질량% 이온 교환수:잔량 | 20초(0.03g) | 30초(0.03g) |
실시예 2 | 염산(염화수소로서):20질량% 황산:20질량% 아질산나트륨(아질산이온으로서):0.1질량% 티오살리실산:0.001질량% 이온 교환수:잔량 | 20초(0.00g) | 30초(0.00g) |
실시예 3 | 염산(염화수소로서):20질량% 황산:20질량% 아질산나트륨(아질산이온으로서):1질량% 티아졸:0.01질량% 이온 교환수:잔량 | 20초(0.00g) | 30초(0.00g) |
실시예 4 | 염산(염화수소로서):20질량% 황산:10질량% 아질산나트륨(아질산이온으로서):0.01질량% 벤조티아졸:0.3질량% 이온 교환수:잔량 | 30초(0.00g) | 60초(0.00g) |
실시예 5 | 염산(염화수소로서):20질량% 황산:20질량% 산화질소(NO):액 1kg에 대해, 3리터 β-메르캅토프로피온산:0.3질량% 이온 교환수:잔량 | 20초(0.00g) | 30초(0.00g) |
실시예 6 | 염산(염화수소로서):20질량% 황산:10질량% 아질산리튬(아질산이온으로서):0.01질량% 벤조티아졸:0.1질량% β-메르캅토프로피온산:0.1질량% 이온 교환수:잔량 | 30초(0.00g) | 50초(0.00g) |
실시예 7 | 염산(염화수소로서):10질량% 황산:20질량% 아질산칼륨(아질산이온으로서):1질량% 2-메르캅토에탄술폰산나트륨:0.05질량% 이온 교환수:잔량 | 20초(0.00g) | 30초(0.00g) |
실시예 8 | 염산(염화수소로서):20질량% 황산:20질량% 산화질소(NO):액 1kg에 대해, 3리터 2-메르캅토에탄술폰산나트륨:0.01질량% 티오살리실산:0.01질량% 이온 교환수:잔량 | 20초(0.00g) | 30초(0.00g) |
조성 | Ni-Cr 합금의 용해시간(구리 박의 중량변화) | Pd의 용해시간 (구리 박의 중량변화) | |
비교예 1 | 염산(염화수소로서):10질량% 황산:20질량% 티오요소:1질량% 이온 교환수:잔량 | 300초(0.01g) | 300초 이상 (0.01g) |
비교예 2 | 염산(염화수소로서):5질량% 염화제이철:30질량% 이온 교환수:잔량 | 180초(0.48g) | 30초(0.08g) |
비교예 3 | 염산(염화수소로서):5질량% 황산:5질량% 이온 교환수:잔량 | 600초 이상 (0.3g 이상) | 600초 이상 (0.3g 이상) |
구리층의 높이 H(㎛) | 구리층의 꼭대기부의 폭 W1(㎛) | 구리층의 기부의 폭 W2(㎛) | 배선의 피치 (㎛) | ||
실시예 9 | 제거 전 | 8 | 13 | 15 | 30 |
제거 후 | 7.98 | 12.97 | 14.97 | 30 | |
비교예 4 | 제거 전 | 8 | 13 | 15 | 30 |
제거 후 | 7.97 | 12.98 | 14.97 | 30 | |
비교예 5 | 제거 전 | 8 | 13 | 15 | 30 |
제거 후 | - | 0 | 1 | 30 |
Claims (11)
- Ni, Cr, Ni-Cr 합금 및 Pd로부터 선택되는 적어도 1개의 금속을 에칭하는 에칭액으로서,NO, N2O, NO2, N2O3 및 이들의 이온으로부터 선택되는 적어도 한 성분과, 산 성분을 함유하는 수용액인 것을 특징으로 하는 에칭액.
- 제1항에 있어서, 상기 NO, N2O, NO2, N2O3 및 이들의 이온으로부터 선택되는 적어도 한 성분의 농도는, 0.0001∼10질량%인 에칭액.
- 제1항 또는 제2항에 있어서, 상기 NO, N2O, NO2, N2O3 및 이들의 이온으로부터 선택되는 적어도 한 성분은, 아질산 이온인 에칭액.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 아미노기, 이미노기, 카르복실기, 카르보닐기, 술포기 및 수산기로부터 선택되는 적어도 1종의 기와, 황원자를 갖고, 또한 탄소 원자수가 7 이하인 화합물을 더 함유하는 에칭액.
- 제1항 내지 제3항 중 어느 한 항에 있어서, 티아졸 및 티아졸계 화합물로부터 선택되는 적어도 1종을 더 함유하는 에칭액.
- 제1항 내지 제5항 중 어느 한 항에 기재된 에칭액을 반복 사용할 때, 상기 에칭액에 첨가하는 보급액으로서,NO, N2O, NO2, N2O3 및 이들의 이온으로부터 선택되는 적어도 한 성분을 함유하는 수용액인 것을 특징으로 하는 보급액.
- 제6항에 있어서, 상기 NO, N2O, NO2, N2O3 및 이들의 이온으로부터 선택되는 적어도 한 성분은, 아질산 이온인 보급액.
- 제4항에 기재된 에칭액을 반복 사용할 때, 상기 에칭액에 첨가하는 보급액으로서,아미노기, 이미노기, 카르복실기, 카르보닐기, 술포기 및 수산기로부터 선택되는 적어도 1종의 기와, 황원자를 갖고, 또한 탄소 원자수가 7 이하인 화합물을 함유하는 것을 특징으로 하는 보급액.
- 제5항에 기재된 에칭액을 반복 사용할 때, 상기 에칭액에 첨가하는 보급액으로서,티아졸 및 티아졸계 화합물로부터 선택되는 적어도 1종을 함유하는 것을 특징으로 하는 보급액.
- Ni, Cr, Ni-Cr 합금 및 Pd로부터 선택되는 적어도 1개의 금속을 에칭하여 도체 패턴을 형성하는 도체 패턴의 형성 방법으로서,상기 금속을, 제1항 내지 제5항 중 어느 한 항에 기재된 에칭액을 사용해 에칭하는 것을 특징으로 하는 도체 패턴의 형성 방법.
- 제10항에 있어서, 상기 에칭액을 반복 사용할 때, 제6항 내지 제9항 중 어느 한 항에 기재된 보급액을 상기 에칭액에 첨가하여, 상기 에칭액에 의한 상기 금속의 에칭 속도를 소정의 속도 이상으로 유지하면서 상기 금속을 에칭하는 도체 패턴의 형성 방법.
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KR101324678B1 (ko) * | 2013-06-20 | 2013-11-04 | 주식회사 에이씨엠 | 금속 할로겐 화합물을 포함하는 시드 에칭제 |
KR101475892B1 (ko) * | 2013-07-29 | 2014-12-23 | 주식회사 에이씨엠 | 고 종횡비의 배선 형성을 위한 시드 에칭제 |
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JP2008106354A (ja) * | 2006-09-25 | 2008-05-08 | Mec Kk | 金属除去液及びこれを用いた金属除去方法 |
CN102067469A (zh) | 2008-06-27 | 2011-05-18 | 帝人纤维株式会社 | 通信用片材结构体 |
KR101243847B1 (ko) * | 2011-08-18 | 2013-03-20 | 주식회사 이엔에프테크놀로지 | 식각액의 식각 용량이 증대된 구리/몰리브데늄 합금막의 식각 방법 |
CN103107085B (zh) * | 2013-01-31 | 2016-02-10 | 电子科技大学 | 一种NiCr薄膜的干法刻蚀工艺 |
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JP2024075182A (ja) | 2022-11-22 | 2024-06-03 | メック株式会社 | エッチング液セット、エッチング方法および導体パターンの形成方法 |
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US6117795A (en) * | 1998-02-12 | 2000-09-12 | Lsi Logic Corporation | Use of corrosion inhibiting compounds in post-etch cleaning processes of an integrated circuit |
JP2001140084A (ja) * | 1999-08-27 | 2001-05-22 | Mec Kk | ニッケルまたはニッケル合金のエッチング液 |
JP3454765B2 (ja) * | 1999-12-07 | 2003-10-06 | 住友大阪セメント株式会社 | 貴金属系触媒除去液 |
KR100319161B1 (ko) * | 2000-02-15 | 2001-12-29 | 한의섭 | 크롬 금속막의 선택적 에칭 용액 |
JP2003155586A (ja) | 2001-11-16 | 2003-05-30 | Sumitomo Chem Co Ltd | 電子部品用洗浄液 |
JP4241018B2 (ja) * | 2002-12-06 | 2009-03-18 | メック株式会社 | エッチング液 |
JP2004277576A (ja) | 2003-03-17 | 2004-10-07 | Daikin Ind Ltd | エッチング用又は洗浄用の溶液の製造法 |
JP4418916B2 (ja) * | 2004-06-09 | 2010-02-24 | 奥野製薬工業株式会社 | エッチング処理用組成物 |
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KR101475892B1 (ko) * | 2013-07-29 | 2014-12-23 | 주식회사 에이씨엠 | 고 종횡비의 배선 형성을 위한 시드 에칭제 |
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