JP2006196484A5 - - Google Patents

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Publication number
JP2006196484A5
JP2006196484A5 JP2005003365A JP2005003365A JP2006196484A5 JP 2006196484 A5 JP2006196484 A5 JP 2006196484A5 JP 2005003365 A JP2005003365 A JP 2005003365A JP 2005003365 A JP2005003365 A JP 2005003365A JP 2006196484 A5 JP2006196484 A5 JP 2006196484A5
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JP
Japan
Prior art keywords
layer
quantum well
strain
optical
semiconductor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005003365A
Other languages
English (en)
Japanese (ja)
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JP2006196484A (ja
JP4814525B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005003365A priority Critical patent/JP4814525B2/ja
Priority claimed from JP2005003365A external-priority patent/JP4814525B2/ja
Priority to CNB2005100906731A priority patent/CN100530867C/zh
Priority to US11/210,760 priority patent/US7223993B2/en
Publication of JP2006196484A publication Critical patent/JP2006196484A/ja
Publication of JP2006196484A5 publication Critical patent/JP2006196484A5/ja
Application granted granted Critical
Publication of JP4814525B2 publication Critical patent/JP4814525B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005003365A 2005-01-11 2005-01-11 光半導体装置 Expired - Fee Related JP4814525B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005003365A JP4814525B2 (ja) 2005-01-11 2005-01-11 光半導体装置
CNB2005100906731A CN100530867C (zh) 2005-01-11 2005-08-18 光半导体元件
US11/210,760 US7223993B2 (en) 2005-01-11 2005-08-25 Optical semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005003365A JP4814525B2 (ja) 2005-01-11 2005-01-11 光半導体装置

Publications (3)

Publication Number Publication Date
JP2006196484A JP2006196484A (ja) 2006-07-27
JP2006196484A5 true JP2006196484A5 (enExample) 2007-11-08
JP4814525B2 JP4814525B2 (ja) 2011-11-16

Family

ID=36802353

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005003365A Expired - Fee Related JP4814525B2 (ja) 2005-01-11 2005-01-11 光半導体装置

Country Status (3)

Country Link
US (1) US7223993B2 (enExample)
JP (1) JP4814525B2 (enExample)
CN (1) CN100530867C (enExample)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4928927B2 (ja) 2006-12-13 2012-05-09 日本オプネクスト株式会社 面発光半導体レーザ素子
GB2454452B (en) * 2007-09-10 2011-09-28 Ct For Integrated Photonics Ltd Optoelectronic components
GB2464219B (en) * 2007-09-10 2010-11-10 Ct Integrated Photonics Ltd Optoelectronic components
JP2010165708A (ja) * 2009-01-13 2010-07-29 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
TWI557936B (zh) 2010-04-30 2016-11-11 美國波士頓大學信託會 具能帶結構位變動之高效率紫外光發光二極體
JP5545847B2 (ja) * 2010-06-16 2014-07-09 日本電信電話株式会社 光半導体装置
JP2012118168A (ja) * 2010-11-30 2012-06-21 Mitsubishi Electric Corp 電界吸収型変調器及び光半導体装置
JP5457392B2 (ja) * 2011-03-31 2014-04-02 日本電信電話株式会社 半導体レーザ
US8723189B1 (en) 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
US8817354B2 (en) * 2012-01-12 2014-08-26 Kotura, Inc. Optical device having reduced optical leakage
JP6206190B2 (ja) * 2014-01-07 2017-10-04 三菱電機株式会社 半導体レーザ装置および電界吸収型光変調器
JPWO2015137373A1 (ja) * 2014-03-11 2017-04-06 古河電気工業株式会社 半導体装置
JP6320138B2 (ja) * 2014-04-10 2018-05-09 三菱電機株式会社 電界吸収型半導体光変調器
WO2016078057A1 (zh) * 2014-11-20 2016-05-26 华为技术有限公司 一种InP基调制器
US9733497B2 (en) * 2015-04-09 2017-08-15 Mitsubishi Electric Corporation Semiconductor optical modulator and optical module
US10043941B1 (en) * 2017-01-31 2018-08-07 International Business Machines Corporation Light emitting diode having improved quantum efficiency at low injection current
US11532922B2 (en) 2017-10-02 2022-12-20 The Regents Of The University Of California III-nitride surface-emitting laser and method of fabrication
US10727948B2 (en) 2018-04-05 2020-07-28 Nokia Solutions And Networks Oy Communication system employing surface-coupled optical devices
US10411807B1 (en) 2018-04-05 2019-09-10 Nokia Solutions And Networks Oy Optical transmitter having an array of surface-coupled electro-absorption modulators
CN110247301B (zh) * 2019-07-17 2024-02-20 全磊光电股份有限公司 一种宽温度范围的dfb激光器及其制备方法
JP7294572B2 (ja) 2020-03-02 2023-06-20 住友電工デバイス・イノベーション株式会社 光導波路型受光素子
JP7302775B2 (ja) * 2020-03-02 2023-07-04 住友電工デバイス・イノベーション株式会社 半導体受光素子
WO2021240588A1 (ja) * 2020-05-25 2021-12-02 日本電信電話株式会社 歪量子井戸構造、光半導体素子および半導体レーザ
CN112271209B (zh) * 2020-12-14 2021-08-13 陕西源杰半导体科技股份有限公司 半导体器件制备方法及半导体器件
JP7387048B1 (ja) * 2022-07-22 2023-11-27 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子及び半導体発光素子の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3242958B2 (ja) * 1990-11-29 2001-12-25 株式会社東芝 光半導体素子
JPH06204619A (ja) * 1992-12-28 1994-07-22 Anritsu Corp 半導体発光素子
JPH0878786A (ja) * 1994-09-02 1996-03-22 Mitsubishi Electric Corp 歪量子井戸の構造
JPH08264895A (ja) * 1995-03-20 1996-10-11 Fujitsu Ltd 半導体装置
JPH09237889A (ja) 1996-02-29 1997-09-09 Hitachi Ltd 半導体結晶積層体及びそれを用いた半導体装置
JPH11186631A (ja) 1997-12-19 1999-07-09 Hitachi Ltd ホ−ル素子、半導体装置及び回転機構を有する電子装置
JP2001290114A (ja) 2000-04-04 2001-10-19 Hitachi Ltd 光送信モジュール
JP3765382B2 (ja) * 2000-06-06 2006-04-12 日本電信電話株式会社 半導体光変調器及びモノリシック集積半導体光素子
JP2002134842A (ja) 2000-10-26 2002-05-10 Hitachi Ltd 半導体レーザ装置
JP2003017798A (ja) 2001-07-03 2003-01-17 Hitachi Ltd 光変調器集積光源モジュール
JP2003142783A (ja) 2001-11-08 2003-05-16 Hitachi Ltd 半導体レーザおよびそれを用いた光モジュール
JP2003248204A (ja) * 2002-02-25 2003-09-05 Mitsubishi Electric Corp 半導体光素子、半導体光変調素子、及び半導体光受光素子
JP2003309127A (ja) 2002-04-18 2003-10-31 Hitachi Ltd 半導体装置およびそれを用いた電子装置
JP4150210B2 (ja) * 2002-05-10 2008-09-17 株式会社日立製作所 光素子用半導体多層構造及び光素子用半導体導波路構造
JP2004179274A (ja) * 2002-11-26 2004-06-24 Hitachi Ltd 光半導体装置

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