JP2006338017A5 - - Google Patents
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- Publication number
- JP2006338017A5 JP2006338017A5 JP2006150973A JP2006150973A JP2006338017A5 JP 2006338017 A5 JP2006338017 A5 JP 2006338017A5 JP 2006150973 A JP2006150973 A JP 2006150973A JP 2006150973 A JP2006150973 A JP 2006150973A JP 2006338017 A5 JP2006338017 A5 JP 2006338017A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- quantum well
- band gap
- composition
- gap energy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000004888 barrier function Effects 0.000 claims 17
- 230000003287 optical effect Effects 0.000 claims 11
- 239000000463 material Substances 0.000 claims 7
- 238000000034 method Methods 0.000 claims 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 4
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 claims 4
- 229910052698 phosphorus Inorganic materials 0.000 claims 4
- 239000011574 phosphorus Substances 0.000 claims 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 2
- 230000007423 decrease Effects 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/141100 | 2005-05-31 | ||
| US11/141,100 US7177061B2 (en) | 2005-05-31 | 2005-05-31 | Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006338017A JP2006338017A (ja) | 2006-12-14 |
| JP2006338017A5 true JP2006338017A5 (enExample) | 2009-07-09 |
| JP5090668B2 JP5090668B2 (ja) | 2012-12-05 |
Family
ID=36716940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006150973A Expired - Fee Related JP5090668B2 (ja) | 2005-05-31 | 2006-05-31 | 有効光電流発生能を増大させた量子井戸構造を有する半導体光変調器 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7177061B2 (enExample) |
| EP (1) | EP1729167B1 (enExample) |
| JP (1) | JP5090668B2 (enExample) |
| KR (1) | KR101281943B1 (enExample) |
| CN (1) | CN1933264A (enExample) |
| DE (1) | DE602006006616D1 (enExample) |
| TW (1) | TWI348567B (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9782995B2 (en) * | 2009-02-17 | 2017-10-10 | Malte Pflughoefft | Security and/or value document having a type II semiconductor contact system |
| CN103296165B (zh) * | 2013-06-19 | 2016-08-10 | 中国科学院半导体研究所 | 一种可调控能带的led量子阱结构 |
| KR102038623B1 (ko) * | 2013-08-21 | 2019-10-30 | 삼성전자주식회사 | 광변조기 및 이를 포함한 3차원 영상 획득 장치 |
| CN103682981A (zh) * | 2013-12-13 | 2014-03-26 | 广东高聚激光有限公司 | 具有极化补偿机制的氮化物量子阱、激光器及发光二极管 |
| JP6391606B2 (ja) * | 2015-04-09 | 2018-09-19 | 三菱電機株式会社 | 半導体光変調器及び光モジュール |
| CN112433394A (zh) * | 2019-08-06 | 2021-03-02 | 晶连股份有限公司 | 电致吸收光调变器与激光二极管的整合结构 |
| GB2589065B (en) * | 2019-10-23 | 2024-08-21 | Smart Photonics Holding B V | Fabricating a semiconductor structure with multiple quantum wells |
| CN113376772A (zh) * | 2021-06-23 | 2021-09-10 | 中国科学院上海微系统与信息技术研究所 | 一种基于锗硅电吸收调制器的硅光收发模块 |
| GB2612308A (en) * | 2021-10-26 | 2023-05-03 | Airbus Sas | Electro-absorption modulator |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0650366B2 (ja) * | 1985-06-28 | 1994-06-29 | 日本電気株式会社 | 光変調器 |
| JPS6381305A (ja) * | 1986-09-26 | 1988-04-12 | Nec Corp | 光集積回路 |
| US4761620A (en) * | 1986-12-03 | 1988-08-02 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical reading of quantum well device |
| US4839899A (en) * | 1988-03-09 | 1989-06-13 | Xerox Corporation | Wavelength tuning of multiple quantum well (MQW) heterostructure lasers |
| US4882734A (en) * | 1988-03-09 | 1989-11-21 | Xerox Corporation | Quantum well heterostructure lasers with low current density threshold and higher TO values |
| US5073805A (en) * | 1989-02-06 | 1991-12-17 | Optoelectronics Technology Research Corporation | Semiconductor light emitting device including a hole barrier contiguous to an active layer |
| JP2789644B2 (ja) * | 1989-02-21 | 1998-08-20 | 日本電気株式会社 | 光変調器 |
| US5008717A (en) * | 1989-03-03 | 1991-04-16 | At&T Bell Laboratories | Semiconductor device including cascaded modulation-doped quantum well heterostructures |
| US5229878A (en) * | 1990-07-02 | 1993-07-20 | Canon Kabushiki Kaisha | Method and apparatus for modulating light using semiconductor element having quantum well structure |
| US5034783A (en) * | 1990-07-27 | 1991-07-23 | At&T Bell Laboratories | Semiconductor device including cascadable polarization independent heterostructure |
| US5170407A (en) * | 1991-10-11 | 1992-12-08 | At&T Bell Laboratories | Elimination of heterojunction band discontinuities |
| EP0549853B1 (en) * | 1991-12-16 | 1997-02-05 | International Business Machines Corporation | Coupled quantum well tunable laser |
| JPH05304290A (ja) * | 1992-04-28 | 1993-11-16 | Nec Corp | オーミック電極 |
| JPH06125141A (ja) * | 1992-08-25 | 1994-05-06 | Olympus Optical Co Ltd | 半導体量子井戸光学素子 |
| JPH0682852A (ja) * | 1992-08-31 | 1994-03-25 | Fujitsu Ltd | 半導体装置 |
| JP2809124B2 (ja) | 1995-02-09 | 1998-10-08 | 日本電気株式会社 | 光半導体集積素子およびその製造方法 |
| JPH08262381A (ja) * | 1995-03-20 | 1996-10-11 | Fujitsu Ltd | 半導体装置 |
| JPH09171162A (ja) * | 1995-12-20 | 1997-06-30 | Fujitsu Ltd | 半導体光変調器 |
| US5953479A (en) | 1998-05-07 | 1999-09-14 | The United States Of America As Represented By The Secretary Of The Army | Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration |
| US7095542B2 (en) | 2001-02-01 | 2006-08-22 | The Regents Of The University Of California | Electroabsorption modulator having a barrier inside a quantum well |
-
2005
- 2005-05-31 US US11/141,100 patent/US7177061B2/en not_active Expired - Fee Related
-
2006
- 2006-05-18 TW TW095117632A patent/TWI348567B/zh not_active IP Right Cessation
- 2006-05-22 EP EP06010549A patent/EP1729167B1/en not_active Ceased
- 2006-05-22 DE DE602006006616T patent/DE602006006616D1/de not_active Expired - Fee Related
- 2006-05-30 KR KR1020060048789A patent/KR101281943B1/ko not_active Expired - Fee Related
- 2006-05-31 CN CNA2006101257742A patent/CN1933264A/zh active Pending
- 2006-05-31 JP JP2006150973A patent/JP5090668B2/ja not_active Expired - Fee Related
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