CN1933264A - 具有量子阱结构的半导体光调制器 - Google Patents

具有量子阱结构的半导体光调制器 Download PDF

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Publication number
CN1933264A
CN1933264A CNA2006101257742A CN200610125774A CN1933264A CN 1933264 A CN1933264 A CN 1933264A CN A2006101257742 A CNA2006101257742 A CN A2006101257742A CN 200610125774 A CN200610125774 A CN 200610125774A CN 1933264 A CN1933264 A CN 1933264A
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CN
China
Prior art keywords
layer
quantum well
graded
percentage
waveguide
Prior art date
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Pending
Application number
CNA2006101257742A
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English (en)
Chinese (zh)
Inventor
D·P·布尔
J·朱
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Avago Technologies Fiber IP Singapore Pte Ltd
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Filing date
Publication date
Application filed by Avago Technologies Fiber IP Singapore Pte Ltd filed Critical Avago Technologies Fiber IP Singapore Pte Ltd
Publication of CN1933264A publication Critical patent/CN1933264A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
    • G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells
    • G02F1/01758—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells with an asymmetric well profile, e.g. asymmetrically stepped quantum wells

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Integrated Circuits (AREA)
CNA2006101257742A 2005-05-31 2006-05-31 具有量子阱结构的半导体光调制器 Pending CN1933264A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/141100 2005-05-31
US11/141,100 US7177061B2 (en) 2005-05-31 2005-05-31 Semiconductor optical modulator having a quantum well structure for increasing effective photocurrent generating capability

Publications (1)

Publication Number Publication Date
CN1933264A true CN1933264A (zh) 2007-03-21

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ID=36716940

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2006101257742A Pending CN1933264A (zh) 2005-05-31 2006-05-31 具有量子阱结构的半导体光调制器

Country Status (7)

Country Link
US (1) US7177061B2 (enExample)
EP (1) EP1729167B1 (enExample)
JP (1) JP5090668B2 (enExample)
KR (1) KR101281943B1 (enExample)
CN (1) CN1933264A (enExample)
DE (1) DE602006006616D1 (enExample)
TW (1) TWI348567B (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103296165A (zh) * 2013-06-19 2013-09-11 中国科学院半导体研究所 一种可调控能带的led量子阱结构
CN103682981A (zh) * 2013-12-13 2014-03-26 广东高聚激光有限公司 具有极化补偿机制的氮化物量子阱、激光器及发光二极管
CN106054411A (zh) * 2015-04-09 2016-10-26 三菱电机株式会社 半导体光调制器以及光模块
CN112433394A (zh) * 2019-08-06 2021-03-02 晶连股份有限公司 电致吸收光调变器与激光二极管的整合结构
CN113376772A (zh) * 2021-06-23 2021-09-10 中国科学院上海微系统与信息技术研究所 一种基于锗硅电吸收调制器的硅光收发模块

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9782995B2 (en) * 2009-02-17 2017-10-10 Malte Pflughoefft Security and/or value document having a type II semiconductor contact system
KR102038623B1 (ko) * 2013-08-21 2019-10-30 삼성전자주식회사 광변조기 및 이를 포함한 3차원 영상 획득 장치
GB2589065B (en) * 2019-10-23 2024-08-21 Smart Photonics Holding B V Fabricating a semiconductor structure with multiple quantum wells
GB2612308A (en) * 2021-10-26 2023-05-03 Airbus Sas Electro-absorption modulator

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JPH0650366B2 (ja) * 1985-06-28 1994-06-29 日本電気株式会社 光変調器
JPS6381305A (ja) * 1986-09-26 1988-04-12 Nec Corp 光集積回路
US4761620A (en) * 1986-12-03 1988-08-02 American Telephone And Telegraph Company, At&T Bell Laboratories Optical reading of quantum well device
US4839899A (en) * 1988-03-09 1989-06-13 Xerox Corporation Wavelength tuning of multiple quantum well (MQW) heterostructure lasers
US4882734A (en) * 1988-03-09 1989-11-21 Xerox Corporation Quantum well heterostructure lasers with low current density threshold and higher TO values
US5073805A (en) * 1989-02-06 1991-12-17 Optoelectronics Technology Research Corporation Semiconductor light emitting device including a hole barrier contiguous to an active layer
JP2789644B2 (ja) * 1989-02-21 1998-08-20 日本電気株式会社 光変調器
US5008717A (en) * 1989-03-03 1991-04-16 At&T Bell Laboratories Semiconductor device including cascaded modulation-doped quantum well heterostructures
US5229878A (en) * 1990-07-02 1993-07-20 Canon Kabushiki Kaisha Method and apparatus for modulating light using semiconductor element having quantum well structure
US5034783A (en) * 1990-07-27 1991-07-23 At&T Bell Laboratories Semiconductor device including cascadable polarization independent heterostructure
US5170407A (en) * 1991-10-11 1992-12-08 At&T Bell Laboratories Elimination of heterojunction band discontinuities
EP0549853B1 (en) * 1991-12-16 1997-02-05 International Business Machines Corporation Coupled quantum well tunable laser
JPH05304290A (ja) * 1992-04-28 1993-11-16 Nec Corp オーミック電極
JPH06125141A (ja) * 1992-08-25 1994-05-06 Olympus Optical Co Ltd 半導体量子井戸光学素子
JPH0682852A (ja) * 1992-08-31 1994-03-25 Fujitsu Ltd 半導体装置
JP2809124B2 (ja) 1995-02-09 1998-10-08 日本電気株式会社 光半導体集積素子およびその製造方法
JPH08262381A (ja) * 1995-03-20 1996-10-11 Fujitsu Ltd 半導体装置
JPH09171162A (ja) * 1995-12-20 1997-06-30 Fujitsu Ltd 半導体光変調器
US5953479A (en) 1998-05-07 1999-09-14 The United States Of America As Represented By The Secretary Of The Army Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration
US7095542B2 (en) 2001-02-01 2006-08-22 The Regents Of The University Of California Electroabsorption modulator having a barrier inside a quantum well

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103296165A (zh) * 2013-06-19 2013-09-11 中国科学院半导体研究所 一种可调控能带的led量子阱结构
CN103296165B (zh) * 2013-06-19 2016-08-10 中国科学院半导体研究所 一种可调控能带的led量子阱结构
CN103682981A (zh) * 2013-12-13 2014-03-26 广东高聚激光有限公司 具有极化补偿机制的氮化物量子阱、激光器及发光二极管
CN106054411A (zh) * 2015-04-09 2016-10-26 三菱电机株式会社 半导体光调制器以及光模块
CN112433394A (zh) * 2019-08-06 2021-03-02 晶连股份有限公司 电致吸收光调变器与激光二极管的整合结构
CN113376772A (zh) * 2021-06-23 2021-09-10 中国科学院上海微系统与信息技术研究所 一种基于锗硅电吸收调制器的硅光收发模块

Also Published As

Publication number Publication date
TW200706945A (en) 2007-02-16
TWI348567B (en) 2011-09-11
EP1729167A1 (en) 2006-12-06
DE602006006616D1 (de) 2009-06-18
KR20060125547A (ko) 2006-12-06
JP2006338017A (ja) 2006-12-14
KR101281943B1 (ko) 2013-07-03
EP1729167B1 (en) 2009-05-06
JP5090668B2 (ja) 2012-12-05
US7177061B2 (en) 2007-02-13
US20060269183A1 (en) 2006-11-30

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Open date: 20070321