JP2006338017A - 有効光電流発生能を増大させた量子井戸構造を有する半導体光変調器 - Google Patents
有効光電流発生能を増大させた量子井戸構造を有する半導体光変調器 Download PDFInfo
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Abstract
【解決手段】 本発明の光変調気は、第1の導波路層及び障壁層と、第1の導波路層と障壁層の間に挟まれている量子井戸層とからなり、量子井戸層が、最小のバンドギャップエネルギーと、第1の導波路層及び障壁層の少なくとも一つのバンドギャップエネルギーとの間で、バンドギャップエネルギーが変化する傾斜組成層を有することを特徴とする。
【選択図】 図2A
Description
前記第1の導波路層(104)と前記障壁層(108)の間に挟まれている量子井戸層(106)とからなり、
前記量子井戸層(106)が、最小のバンドギャップエネルギーと、前記第1の導波路層(104)及び前記障壁層(108)の少なくとも一つのバンドギャップエネルギーとの間で、前記量子井戸層(106)のバンドギャップエネルギーが変化する傾斜組成層を有する光変調器(100)。
傾斜組成層(325)及び固定傾斜層(306)からなり、該傾斜組成層(325)が前記第1の導波路層(304)と該固定傾斜層(306)の間に挟まれ、該傾斜組成層(325)が、前記第1の導波路層(304)のバンドギャップエネルギーと該固定組成層(306)のバンドギャップエネルギーの間のバンドギャップエネルギーを有している1項に記載の光変調器(100)。
104、116 導波路層
106、112 量子井戸層
108 障壁層
118 n型材料
150 伝導帯
154 価電子帯
202 p型材料
204、216 導波路層
206、212 量子井戸層
208 障壁層
218 n型材料
250 伝導帯
254 価電子帯
302 p型材料
304、316 導波路層
306、312 固定組成層
308 障壁層
318 n型材料
325、327 傾斜組成層
352 伝導帯
354 価電子帯
Claims (22)
- 第1の導波路層及び障壁層と、
前記第1の導波路層と前記障壁層の間に挟まれている量子井戸層とからなり、
前記量子井戸層が、最小のバンドギャップエネルギーと、前記第1の導波路層及び前記障壁層の少なくとも一つのバンドギャップエネルギーとの間で、前記量子井戸層のバンドギャップエネルギーが変化する傾斜組成層を有する光変調器。 - 前記量子井戸層の材料が、前記第1の導波路層及び前記障壁層の材料と同じ要素を含む請求項1記載の光変調器。
- 少なくとも一つの要素の割合が前記量子井戸層にわたって傾斜し、前記少なくとも一つの要素の割合が前記障壁層に向かって増大し、少なくとも一つの別の要素の割合が前記量子井戸層にわたって傾斜し、前記少なくとも一つの別の要素の割合が前記障壁層に向かって減少する請求項2記載の光変調器。
- 少なくとも一つの要素の割合が前記量子井戸層にわたって傾斜し、前記少なくとも一つの要素の割合が前記障壁層に向かって減少し、少なくとも一つの別の要素の割合が前記量子井戸層にわたって傾斜し、前記少なくとも一つの別の要素の割合が前記障壁層に向かって増大する請求項2記載の光変調器。
- 前記第1の導波路層がインジウムリン(InP)からなり、前記量子井戸層がインジウムガリウムヒ素リン(InGaAsP)からなる請求項2記載の光変調器。
- 前記量子井戸層がインジウムガリウムヒ素リン(InxGa1-xAsyP1-y)からなり、0≦x≦1及び0≦y≦1である請求項5記載の光変調器。
- 電気的な逆バイアスが前記量子井戸層にわたって適用されると、伝導帯の電子の分布が、前記量子井戸層の価電子帯の正孔の分布と実質上整列する請求項6記載の光変調器。
- 前記量子井戸層が、In0.61Ga0.39As0.84P0.16とIn0.85Ga0.15As0.33P0.67の間で変動する漸進的な組成を有する請求項7記載の光変調器。
- 前記量子井戸層が、さらに
傾斜組成層及び固定傾斜層からなり、該傾斜組成層が前記第1の導波路層と該固定傾斜層の間に挟まれ、該傾斜組成層が、前記第1の導波路層のバンドギャップエネルギーと該固定組成層のバンドギャップエネルギーの間のバンドギャップエネルギーを有している請求項1に記載の光変調器。 - 前記傾斜組成層の材料が、前記第1の導波路層及び前記固定組成層の材料と同じ要素を含む請求項9記載の光変調器。
- 少なくとも一つの要素の割合が前記傾斜組成層にわたって傾斜し、前記少なくとも一つの要素の割合が前記障壁層に向かって増大し、少なくとも一つの別の要素の割合が前記傾斜組成層にわたって傾斜し、前記少なくとも一つの別の要素の割合が前記障壁層に向かって減少する請求項10記載の光変調器。
- 少なくとも一つの要素の割合が前記傾斜組成層にわたって傾斜し、前記少なくとも一つの要素の割合が前記障壁層に向かって減少し、少なくとも一つの別の要素の割合が前記傾斜組成層にわたって傾斜し、前記少なくとも一つの別の要素の割合が前記障壁層に向かって増大する請求項10記載の光変調器。
- 前記第1の導波路層、前記障壁層、前記固定組成層がインジウムリン(InP)からなり、前記傾斜組成層がインジウムガリウムヒ素リン(InGaAsP)からなる請求項10記載の光変調器。
- 前記傾斜組成層がインジウムガリウムヒ素リン(InxGa1-xAsyP1-y)からなり、0≦x≦1及び0≦y≦1である請求項13記載の光変調器。
- 電気的な逆バイアスが前記量子井戸層にわたって適用されると、伝導帯の電子の分布が、前記量子井戸層の価電子帯の正孔の分布と実質上整列する請求項14記載の光変調器。
- 前記傾斜組成層が、In0.70Ga0.30As0.70P0.30とIn0.85Ga0.15As0.33P0.67の間で変動する漸進的な組成を有する請求項15記載の光変調器。
- 前記傾斜組成層が、前記固定組成層と前記傾斜組成層の界面におけるバンドギャップと、前記第1の導波路層と前記障壁層の少なくとも一つのバンドギャップエネルギーとの間で、前記量子井戸層のバンドギャップエネルギーを変化させる請求項15記載の光変調器。
- そのなかに傾斜組成を形成する少なくとも一つの要素を有する量子井戸構造を設け、その傾斜組成が当該量子井戸構造のバンドギャップエネルギーを変化させ、
前記量子井戸構造の上に光を方向付け、
前記光を電子-正孔対に変換し、
前記量子井戸から前記電子-正孔対を引き出し、光電流を発生させることからなる光の変調方法。 - 前記量子井戸構造内で量子井戸層の組成を傾斜させ、前記量子井戸層に隣接する層のバンドギャップエネルギーの間で、前記量子井戸層のバンドギャップエネルギーを変化させることをさらに含む請求項18記載の変調方法。
- 前記量子井戸構造に付加的な材料層を設け、
前記付加的な材料層の組成を傾斜させ、当該付加的な材料層に隣接する導波路層と前記量子井戸層のバンドギャップエネルギーの間で、当該付加的な材料層のバンドギャップエネルギーを変化させることをさらに含む請求項18記載の変調方法。 - 前記量子井戸構造にわたって電気的な逆バイアスを適用し、それによって伝導帯の電子の分布が前記量子井戸構造の価電子帯の正孔の分布と実質上整列することをさらに含む請求項18記載の変調方法。
- 第1の導波路層及び障壁層と、
前記第1の導波路層と前記障壁層の間に挟まれている量子井戸層とからなり、
前記量子井戸層が、最小のバンドギャップエネルギーと、前記第1の導波路層及び前記障壁層の少なくとも一つのバンドギャップエネルギーとの間で、前記第1の導波路層からの距離が増大するに伴い、前記量子井戸層のバンドギャップエネルギーが変化する傾斜組成層を有する光変調器。
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JPS623220A (ja) * | 1985-06-28 | 1987-01-09 | Nec Corp | 光変調器 |
JPS6381305A (ja) * | 1986-09-26 | 1988-04-12 | Nec Corp | 光集積回路 |
JPH02220025A (ja) * | 1989-02-21 | 1990-09-03 | Nec Corp | 光変調器 |
JPH0682852A (ja) * | 1992-08-31 | 1994-03-25 | Fujitsu Ltd | 半導体装置 |
JPH08220496A (ja) * | 1995-02-09 | 1996-08-30 | Nec Corp | 半導体光変調素子 |
JPH09171162A (ja) * | 1995-12-20 | 1997-06-30 | Fujitsu Ltd | 半導体光変調器 |
US5953479A (en) * | 1998-05-07 | 1999-09-14 | The United States Of America As Represented By The Secretary Of The Army | Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration |
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US4761620A (en) * | 1986-12-03 | 1988-08-02 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical reading of quantum well device |
US4839899A (en) * | 1988-03-09 | 1989-06-13 | Xerox Corporation | Wavelength tuning of multiple quantum well (MQW) heterostructure lasers |
US4882734A (en) * | 1988-03-09 | 1989-11-21 | Xerox Corporation | Quantum well heterostructure lasers with low current density threshold and higher TO values |
US5073805A (en) * | 1989-02-06 | 1991-12-17 | Optoelectronics Technology Research Corporation | Semiconductor light emitting device including a hole barrier contiguous to an active layer |
US5008717A (en) * | 1989-03-03 | 1991-04-16 | At&T Bell Laboratories | Semiconductor device including cascaded modulation-doped quantum well heterostructures |
US5229878A (en) * | 1990-07-02 | 1993-07-20 | Canon Kabushiki Kaisha | Method and apparatus for modulating light using semiconductor element having quantum well structure |
US5034783A (en) * | 1990-07-27 | 1991-07-23 | At&T Bell Laboratories | Semiconductor device including cascadable polarization independent heterostructure |
US5170407A (en) * | 1991-10-11 | 1992-12-08 | At&T Bell Laboratories | Elimination of heterojunction band discontinuities |
EP0549853B1 (en) * | 1991-12-16 | 1997-02-05 | International Business Machines Corporation | Coupled quantum well tunable laser |
JPH05304290A (ja) * | 1992-04-28 | 1993-11-16 | Nec Corp | オーミック電極 |
JPH06125141A (ja) * | 1992-08-25 | 1994-05-06 | Olympus Optical Co Ltd | 半導体量子井戸光学素子 |
JPH08262381A (ja) * | 1995-03-20 | 1996-10-11 | Fujitsu Ltd | 半導体装置 |
WO2002061499A1 (en) | 2001-02-01 | 2002-08-08 | The Regents Of The University Of California | Electroabsorption modulator having a barrier inside a quantum well |
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2005
- 2005-05-31 US US11/141,100 patent/US7177061B2/en not_active Expired - Fee Related
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2006
- 2006-05-18 TW TW095117632A patent/TWI348567B/zh not_active IP Right Cessation
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- 2006-05-30 KR KR1020060048789A patent/KR101281943B1/ko not_active IP Right Cessation
- 2006-05-31 CN CNA2006101257742A patent/CN1933264A/zh active Pending
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS623220A (ja) * | 1985-06-28 | 1987-01-09 | Nec Corp | 光変調器 |
JPS6381305A (ja) * | 1986-09-26 | 1988-04-12 | Nec Corp | 光集積回路 |
JPH02220025A (ja) * | 1989-02-21 | 1990-09-03 | Nec Corp | 光変調器 |
JPH0682852A (ja) * | 1992-08-31 | 1994-03-25 | Fujitsu Ltd | 半導体装置 |
JPH08220496A (ja) * | 1995-02-09 | 1996-08-30 | Nec Corp | 半導体光変調素子 |
JPH09171162A (ja) * | 1995-12-20 | 1997-06-30 | Fujitsu Ltd | 半導体光変調器 |
US5953479A (en) * | 1998-05-07 | 1999-09-14 | The United States Of America As Represented By The Secretary Of The Army | Tilted valance-band quantum well double heterostructures for single step active and passive optical waveguide device monolithic integration |
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TW200706945A (en) | 2007-02-16 |
JP5090668B2 (ja) | 2012-12-05 |
EP1729167B1 (en) | 2009-05-06 |
CN1933264A (zh) | 2007-03-21 |
DE602006006616D1 (de) | 2009-06-18 |
EP1729167A1 (en) | 2006-12-06 |
US7177061B2 (en) | 2007-02-13 |
TWI348567B (en) | 2011-09-11 |
KR20060125547A (ko) | 2006-12-06 |
US20060269183A1 (en) | 2006-11-30 |
KR101281943B1 (ko) | 2013-07-03 |
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