JP2012525603A5 - - Google Patents
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- Publication number
- JP2012525603A5 JP2012525603A5 JP2012508397A JP2012508397A JP2012525603A5 JP 2012525603 A5 JP2012525603 A5 JP 2012525603A5 JP 2012508397 A JP2012508397 A JP 2012508397A JP 2012508397 A JP2012508397 A JP 2012508397A JP 2012525603 A5 JP2012525603 A5 JP 2012525603A5
- Authority
- JP
- Japan
- Prior art keywords
- elongated metal
- separated
- distance
- metal structures
- structures
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 description 10
- 230000003287 optical effect Effects 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/432,967 US8063396B2 (en) | 2009-04-30 | 2009-04-30 | Polariton mode optical switch |
| US12/432,967 | 2009-04-30 | ||
| PCT/KR2010/002649 WO2010126286A1 (en) | 2009-04-30 | 2010-04-27 | Polariton mode optical switch |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012525603A JP2012525603A (ja) | 2012-10-22 |
| JP2012525603A5 true JP2012525603A5 (enExample) | 2012-12-06 |
| JP5744845B2 JP5744845B2 (ja) | 2015-07-08 |
Family
ID=43029720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012508397A Expired - Fee Related JP5744845B2 (ja) | 2009-04-30 | 2010-04-27 | ポラリトンモード光スイッチ |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8063396B2 (enExample) |
| JP (1) | JP5744845B2 (enExample) |
| CN (1) | CN102460279B (enExample) |
| DE (1) | DE112010001867T5 (enExample) |
| WO (1) | WO2010126286A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100258746A1 (en) * | 2009-04-08 | 2010-10-14 | Yun-Chung Na | Massive parallel generation of nonclassical photons via polaritonic superfluid to mott- insulator quantum phase transition |
| US8373153B2 (en) * | 2009-05-26 | 2013-02-12 | University Of Seoul Industry Cooperation Foundation | Photodetectors |
| US8367925B2 (en) * | 2009-06-29 | 2013-02-05 | University Of Seoul Industry Cooperation Foundation | Light-electricity conversion device |
| US8395141B2 (en) * | 2009-07-06 | 2013-03-12 | University Of Seoul Industry Cooperation Foundation | Compound semiconductors |
| US8809834B2 (en) | 2009-07-06 | 2014-08-19 | University Of Seoul Industry Cooperation Foundation | Photodetector capable of detecting long wavelength radiation |
| US8227793B2 (en) * | 2009-07-06 | 2012-07-24 | University Of Seoul Industry Cooperation Foundation | Photodetector capable of detecting the visible light spectrum |
| US8748862B2 (en) * | 2009-07-06 | 2014-06-10 | University Of Seoul Industry Cooperation Foundation | Compound semiconductors |
| US8368990B2 (en) * | 2009-08-21 | 2013-02-05 | University Of Seoul Industry Cooperation Foundation | Polariton mode optical switch with composite structure |
| US8368047B2 (en) | 2009-10-27 | 2013-02-05 | University Of Seoul Industry Cooperation Foundation | Semiconductor device |
| US8058641B2 (en) | 2009-11-18 | 2011-11-15 | University of Seoul Industry Corporation Foundation | Copper blend I-VII compound semiconductor light-emitting devices |
| FR3010233B1 (fr) * | 2013-08-28 | 2017-02-10 | Commissariat Energie Atomique | Structure semiconductrice a zones d'emission commutables, procede de fabrication d'une telle structure et dispositif semiconducteur comportant une telle structure |
| CA2937324C (en) | 2014-01-21 | 2022-09-27 | Google Inc. | Quantum hardware characterized by programmable bose-hubbard hamiltonians |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5175739A (en) | 1988-09-09 | 1992-12-29 | Fujitsu Limited | Semiconductor optical device having a non-linear operational characteristic |
| JP2956304B2 (ja) * | 1991-09-11 | 1999-10-04 | 三菱電機株式会社 | 非線形光学素子および非線形光学用構造体 |
| JP3154438B2 (ja) * | 1992-09-14 | 2001-04-09 | 科学技術振興事業団 | 非線形光学素子 |
| FR2734094B1 (fr) | 1995-05-12 | 1997-06-06 | Commissariat Energie Atomique | Emetteur infrarouge monolithique a semi-conducteur pompe par un microlaser solide declenche |
| JP3817580B2 (ja) * | 2000-08-18 | 2006-09-06 | 独立行政法人科学技術振興機構 | 励起子ポラリトン光スイッチ |
| US7076138B2 (en) * | 2004-02-20 | 2006-07-11 | Altair Center, Llc | Nanophotonic devices based on quantum systems embedded in frequency bandgap media |
| JP2006039214A (ja) * | 2004-07-27 | 2006-02-09 | Tohoku Univ | 光スイッチング素子 |
| JP2006259064A (ja) * | 2005-03-16 | 2006-09-28 | Fdk Corp | 表面プラズモンによる電界増強方法及びデバイス |
| JP4027393B2 (ja) * | 2005-04-28 | 2007-12-26 | キヤノン株式会社 | 面発光レーザ |
| EP1989737A4 (en) * | 2006-02-17 | 2010-03-17 | Ravenbrick Llc | QUANTUM DOT CONTROL DEVICE |
| US8357980B2 (en) * | 2007-10-15 | 2013-01-22 | Hewlett-Packard Development Company, L.P. | Plasmonic high-speed devices for enhancing the performance of microelectronic devices |
-
2009
- 2009-04-30 US US12/432,967 patent/US8063396B2/en not_active Expired - Fee Related
-
2010
- 2010-04-27 WO PCT/KR2010/002649 patent/WO2010126286A1/en not_active Ceased
- 2010-04-27 DE DE112010001867T patent/DE112010001867T5/de not_active Withdrawn
- 2010-04-27 CN CN201080028853.6A patent/CN102460279B/zh not_active Expired - Fee Related
- 2010-04-27 JP JP2012508397A patent/JP5744845B2/ja not_active Expired - Fee Related
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