CN102460279B - 极化子模式光开关 - Google Patents

极化子模式光开关 Download PDF

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Publication number
CN102460279B
CN102460279B CN201080028853.6A CN201080028853A CN102460279B CN 102460279 B CN102460279 B CN 102460279B CN 201080028853 A CN201080028853 A CN 201080028853A CN 102460279 B CN102460279 B CN 102460279B
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CN
China
Prior art keywords
structures
quantum
optical
optical field
light field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080028853.6A
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English (en)
Chinese (zh)
Other versions
CN102460279A (zh
Inventor
安度烈
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Industry Cooperation Foundation of University of Seoul
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Industry Cooperation Foundation of University of Seoul
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Publication of CN102460279A publication Critical patent/CN102460279A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01716—Optically controlled superlattice or quantum well devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/32—Photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/10—Function characteristic plasmon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/755—Nanosheet or quantum barrier/well, i.e. layer structure having one dimension or thickness of 100 nm or less

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Nonlinear Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)
CN201080028853.6A 2009-04-30 2010-04-27 极化子模式光开关 Expired - Fee Related CN102460279B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/432,967 US8063396B2 (en) 2009-04-30 2009-04-30 Polariton mode optical switch
US12/432,967 2009-04-30
PCT/KR2010/002649 WO2010126286A1 (en) 2009-04-30 2010-04-27 Polariton mode optical switch

Publications (2)

Publication Number Publication Date
CN102460279A CN102460279A (zh) 2012-05-16
CN102460279B true CN102460279B (zh) 2016-01-20

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080028853.6A Expired - Fee Related CN102460279B (zh) 2009-04-30 2010-04-27 极化子模式光开关

Country Status (5)

Country Link
US (1) US8063396B2 (enExample)
JP (1) JP5744845B2 (enExample)
CN (1) CN102460279B (enExample)
DE (1) DE112010001867T5 (enExample)
WO (1) WO2010126286A1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100258746A1 (en) * 2009-04-08 2010-10-14 Yun-Chung Na Massive parallel generation of nonclassical photons via polaritonic superfluid to mott- insulator quantum phase transition
US8373153B2 (en) * 2009-05-26 2013-02-12 University Of Seoul Industry Cooperation Foundation Photodetectors
US8367925B2 (en) * 2009-06-29 2013-02-05 University Of Seoul Industry Cooperation Foundation Light-electricity conversion device
US8395141B2 (en) * 2009-07-06 2013-03-12 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8809834B2 (en) 2009-07-06 2014-08-19 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting long wavelength radiation
US8227793B2 (en) * 2009-07-06 2012-07-24 University Of Seoul Industry Cooperation Foundation Photodetector capable of detecting the visible light spectrum
US8748862B2 (en) * 2009-07-06 2014-06-10 University Of Seoul Industry Cooperation Foundation Compound semiconductors
US8368990B2 (en) * 2009-08-21 2013-02-05 University Of Seoul Industry Cooperation Foundation Polariton mode optical switch with composite structure
US8368047B2 (en) 2009-10-27 2013-02-05 University Of Seoul Industry Cooperation Foundation Semiconductor device
US8058641B2 (en) 2009-11-18 2011-11-15 University of Seoul Industry Corporation Foundation Copper blend I-VII compound semiconductor light-emitting devices
FR3010233B1 (fr) * 2013-08-28 2017-02-10 Commissariat Energie Atomique Structure semiconductrice a zones d'emission commutables, procede de fabrication d'une telle structure et dispositif semiconducteur comportant une telle structure
CA2937324C (en) 2014-01-21 2022-09-27 Google Inc. Quantum hardware characterized by programmable bose-hubbard hamiltonians

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175739A (en) * 1988-09-09 1992-12-29 Fujitsu Limited Semiconductor optical device having a non-linear operational characteristic
US6813063B2 (en) * 2000-08-18 2004-11-02 Japan Science And Technology Agency Exciton polariton optical switch
CN101405866A (zh) * 2006-02-17 2009-04-08 雷文布里克有限责任公司 量子点转换装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2956304B2 (ja) * 1991-09-11 1999-10-04 三菱電機株式会社 非線形光学素子および非線形光学用構造体
JP3154438B2 (ja) * 1992-09-14 2001-04-09 科学技術振興事業団 非線形光学素子
FR2734094B1 (fr) 1995-05-12 1997-06-06 Commissariat Energie Atomique Emetteur infrarouge monolithique a semi-conducteur pompe par un microlaser solide declenche
US7076138B2 (en) * 2004-02-20 2006-07-11 Altair Center, Llc Nanophotonic devices based on quantum systems embedded in frequency bandgap media
JP2006039214A (ja) * 2004-07-27 2006-02-09 Tohoku Univ 光スイッチング素子
JP2006259064A (ja) * 2005-03-16 2006-09-28 Fdk Corp 表面プラズモンによる電界増強方法及びデバイス
JP4027393B2 (ja) * 2005-04-28 2007-12-26 キヤノン株式会社 面発光レーザ
US8357980B2 (en) * 2007-10-15 2013-01-22 Hewlett-Packard Development Company, L.P. Plasmonic high-speed devices for enhancing the performance of microelectronic devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5175739A (en) * 1988-09-09 1992-12-29 Fujitsu Limited Semiconductor optical device having a non-linear operational characteristic
US6813063B2 (en) * 2000-08-18 2004-11-02 Japan Science And Technology Agency Exciton polariton optical switch
CN101405866A (zh) * 2006-02-17 2009-04-08 雷文布里克有限责任公司 量子点转换装置

Also Published As

Publication number Publication date
WO2010126286A1 (en) 2010-11-04
JP2012525603A (ja) 2012-10-22
JP5744845B2 (ja) 2015-07-08
US20100276661A1 (en) 2010-11-04
US8063396B2 (en) 2011-11-22
CN102460279A (zh) 2012-05-16
DE112010001867T5 (de) 2012-11-29

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Granted publication date: 20160120

Termination date: 20190427