JP4814525B2 - 光半導体装置 - Google Patents

光半導体装置 Download PDF

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Publication number
JP4814525B2
JP4814525B2 JP2005003365A JP2005003365A JP4814525B2 JP 4814525 B2 JP4814525 B2 JP 4814525B2 JP 2005003365 A JP2005003365 A JP 2005003365A JP 2005003365 A JP2005003365 A JP 2005003365A JP 4814525 B2 JP4814525 B2 JP 4814525B2
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Japan
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layer
strain
quantum well
optical
semiconductor
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Expired - Fee Related
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JP2005003365A
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Japanese (ja)
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JP2006196484A (ja
JP2006196484A5 (enExample
Inventor
宏治 中原
真 工藤
滋久 田中
正敬 白井
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Hitachi Ltd
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Hitachi Ltd
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Priority to JP2005003365A priority Critical patent/JP4814525B2/ja
Priority to CNB2005100906731A priority patent/CN100530867C/zh
Priority to US11/210,760 priority patent/US7223993B2/en
Publication of JP2006196484A publication Critical patent/JP2006196484A/ja
Publication of JP2006196484A5 publication Critical patent/JP2006196484A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01708—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells in an optical wavequide structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • G02F1/01766—Strained superlattice devices; Strained quantum well devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1221—Detuning between Bragg wavelength and gain maximum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3406—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation including strain compensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers
    • H01S5/34366—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers based on InGa(Al)AS
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/962—Quantum dots and lines

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
JP2005003365A 2005-01-11 2005-01-11 光半導体装置 Expired - Fee Related JP4814525B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005003365A JP4814525B2 (ja) 2005-01-11 2005-01-11 光半導体装置
CNB2005100906731A CN100530867C (zh) 2005-01-11 2005-08-18 光半导体元件
US11/210,760 US7223993B2 (en) 2005-01-11 2005-08-25 Optical semiconductor device

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Application Number Priority Date Filing Date Title
JP2005003365A JP4814525B2 (ja) 2005-01-11 2005-01-11 光半導体装置

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JP2006196484A JP2006196484A (ja) 2006-07-27
JP2006196484A5 JP2006196484A5 (enExample) 2007-11-08
JP4814525B2 true JP4814525B2 (ja) 2011-11-16

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US (1) US7223993B2 (enExample)
JP (1) JP4814525B2 (enExample)
CN (1) CN100530867C (enExample)

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JP4928927B2 (ja) 2006-12-13 2012-05-09 日本オプネクスト株式会社 面発光半導体レーザ素子
GB2454452B (en) * 2007-09-10 2011-09-28 Ct For Integrated Photonics Ltd Optoelectronic components
GB2464219B (en) * 2007-09-10 2010-11-10 Ct Integrated Photonics Ltd Optoelectronic components
JP2010165708A (ja) * 2009-01-13 2010-07-29 Nippon Telegr & Teleph Corp <Ntt> 半導体レーザ
TWI557936B (zh) 2010-04-30 2016-11-11 美國波士頓大學信託會 具能帶結構位變動之高效率紫外光發光二極體
JP5545847B2 (ja) * 2010-06-16 2014-07-09 日本電信電話株式会社 光半導体装置
JP2012118168A (ja) * 2010-11-30 2012-06-21 Mitsubishi Electric Corp 電界吸収型変調器及び光半導体装置
JP5457392B2 (ja) * 2011-03-31 2014-04-02 日本電信電話株式会社 半導体レーザ
US8723189B1 (en) 2012-01-06 2014-05-13 Trustees Of Boston University Ultraviolet light emitting diode structures and methods of manufacturing the same
US8817354B2 (en) * 2012-01-12 2014-08-26 Kotura, Inc. Optical device having reduced optical leakage
JP6206190B2 (ja) * 2014-01-07 2017-10-04 三菱電機株式会社 半導体レーザ装置および電界吸収型光変調器
JPWO2015137373A1 (ja) * 2014-03-11 2017-04-06 古河電気工業株式会社 半導体装置
JP6320138B2 (ja) * 2014-04-10 2018-05-09 三菱電機株式会社 電界吸収型半導体光変調器
WO2016078057A1 (zh) * 2014-11-20 2016-05-26 华为技术有限公司 一种InP基调制器
US9733497B2 (en) * 2015-04-09 2017-08-15 Mitsubishi Electric Corporation Semiconductor optical modulator and optical module
US10043941B1 (en) * 2017-01-31 2018-08-07 International Business Machines Corporation Light emitting diode having improved quantum efficiency at low injection current
US11532922B2 (en) 2017-10-02 2022-12-20 The Regents Of The University Of California III-nitride surface-emitting laser and method of fabrication
US10727948B2 (en) 2018-04-05 2020-07-28 Nokia Solutions And Networks Oy Communication system employing surface-coupled optical devices
US10411807B1 (en) 2018-04-05 2019-09-10 Nokia Solutions And Networks Oy Optical transmitter having an array of surface-coupled electro-absorption modulators
CN110247301B (zh) * 2019-07-17 2024-02-20 全磊光电股份有限公司 一种宽温度范围的dfb激光器及其制备方法
JP7294572B2 (ja) 2020-03-02 2023-06-20 住友電工デバイス・イノベーション株式会社 光導波路型受光素子
JP7302775B2 (ja) * 2020-03-02 2023-07-04 住友電工デバイス・イノベーション株式会社 半導体受光素子
WO2021240588A1 (ja) * 2020-05-25 2021-12-02 日本電信電話株式会社 歪量子井戸構造、光半導体素子および半導体レーザ
CN112271209B (zh) * 2020-12-14 2021-08-13 陕西源杰半导体科技股份有限公司 半导体器件制备方法及半导体器件
JP7387048B1 (ja) * 2022-07-22 2023-11-27 Ｄｏｗａエレクトロニクス株式会社 半導体発光素子及び半導体発光素子の製造方法

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JP2002134842A (ja) 2000-10-26 2002-05-10 Hitachi Ltd 半導体レーザ装置
JP2003017798A (ja) 2001-07-03 2003-01-17 Hitachi Ltd 光変調器集積光源モジュール
JP2003142783A (ja) 2001-11-08 2003-05-16 Hitachi Ltd 半導体レーザおよびそれを用いた光モジュール
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JP4150210B2 (ja) * 2002-05-10 2008-09-17 株式会社日立製作所 光素子用半導体多層構造及び光素子用半導体導波路構造
JP2004179274A (ja) * 2002-11-26 2004-06-24 Hitachi Ltd 光半導体装置

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CN1805231A (zh) 2006-07-19
US20070051939A1 (en) 2007-03-08
US7223993B2 (en) 2007-05-29
CN100530867C (zh) 2009-08-19

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