JP2010157691A5 - - Google Patents
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- JP2010157691A5 JP2010157691A5 JP2009263472A JP2009263472A JP2010157691A5 JP 2010157691 A5 JP2010157691 A5 JP 2010157691A5 JP 2009263472 A JP2009263472 A JP 2009263472A JP 2009263472 A JP2009263472 A JP 2009263472A JP 2010157691 A5 JP2010157691 A5 JP 2010157691A5
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- JP
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- Prior art keywords
- inp
- subsequently
- layer
- etching
- quantum well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 238000005530 etching Methods 0.000 description 23
- 230000003287 optical effect Effects 0.000 description 22
- 239000000758 substrate Substances 0.000 description 21
- 238000000206 photolithography Methods 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910052785 arsenic Inorganic materials 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 229910052733 gallium Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 230000000875 corresponding effect Effects 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 238000005253 cladding Methods 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009263472A JP5451332B2 (ja) | 2008-12-02 | 2009-11-19 | 光半導体装置 |
| US12/628,834 US8068526B2 (en) | 2008-12-02 | 2009-12-01 | Semiconductor optical device |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008306963 | 2008-12-02 | ||
| JP2008306963 | 2008-12-02 | ||
| JP2009263472A JP5451332B2 (ja) | 2008-12-02 | 2009-11-19 | 光半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010157691A JP2010157691A (ja) | 2010-07-15 |
| JP2010157691A5 true JP2010157691A5 (enExample) | 2012-11-01 |
| JP5451332B2 JP5451332B2 (ja) | 2014-03-26 |
Family
ID=42354136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009263472A Active JP5451332B2 (ja) | 2008-12-02 | 2009-11-19 | 光半導体装置 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US8068526B2 (enExample) |
| JP (1) | JP5451332B2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB201002088D0 (en) * | 2010-02-09 | 2010-03-24 | Ct For Integrated Photonics Th | Opto-electronic device |
| JP5691741B2 (ja) * | 2011-03-30 | 2015-04-01 | 富士通株式会社 | 光半導体素子及びその製造方法 |
| JP5803366B2 (ja) * | 2011-07-14 | 2015-11-04 | 住友電気工業株式会社 | 埋め込みヘテロ構造半導体レーザの製造方法及び埋め込みヘテロ構造半導体レーザ |
| JP2013077797A (ja) * | 2011-09-16 | 2013-04-25 | Mitsubishi Electric Corp | 半導体レーザおよびその製造方法 |
| CN103030106B (zh) | 2011-10-06 | 2015-04-01 | 清华大学 | 三维纳米结构阵列 |
| JP2013153015A (ja) * | 2012-01-24 | 2013-08-08 | Mitsubishi Electric Corp | 光変調器集積光源 |
| JP5947731B2 (ja) * | 2013-02-07 | 2016-07-06 | 日本電信電話株式会社 | 多チャネルレーザアレイ光源 |
| EP3828319A1 (en) * | 2013-03-26 | 2021-06-02 | JX Nippon Mining & Metals Corp. | Compound semiconductor wafer, photoelectric conversion element, and method for producing group iii-v compound semiconductor single crystals |
| JP6220614B2 (ja) * | 2013-09-20 | 2017-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
| JP6454981B2 (ja) * | 2014-04-24 | 2019-01-23 | 住友電気工業株式会社 | 半導体積層体および受光素子 |
| WO2016056498A1 (ja) * | 2014-10-06 | 2016-04-14 | 古河電気工業株式会社 | 半導体光集積素子およびその製造方法 |
| EP3542429B1 (en) * | 2016-11-17 | 2024-09-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method for fabricating an electro-absorption modulated laser and electro-absorption modulated laser |
| US10447006B2 (en) * | 2017-02-22 | 2019-10-15 | International Business Machines Corporation | Electro-optical device with asymmetric, vertical current injection ohmic contacts |
| JP6927091B2 (ja) * | 2018-03-07 | 2021-08-25 | 日本電信電話株式会社 | 半導体光集積素子の製造方法 |
| WO2019186743A1 (ja) * | 2018-03-28 | 2019-10-03 | 三菱電機株式会社 | 半導体レーザ素子およびその製造方法 |
| JP6729982B2 (ja) * | 2019-05-27 | 2020-07-29 | 三菱電機株式会社 | 半導体光集積素子 |
| JP7024918B1 (ja) * | 2021-01-21 | 2022-02-24 | 三菱電機株式会社 | アバランシェフォトダイオード |
| US20240380181A1 (en) * | 2021-10-08 | 2024-11-14 | Nippon Telegraph And Telephone Corporation | Semiconductor device and manufacturing method therefor |
| WO2024100788A1 (ja) * | 2022-11-09 | 2024-05-16 | 日本電信電話株式会社 | 半導体装置 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6290969A (ja) * | 1985-10-17 | 1987-04-25 | Matsushita Electric Ind Co Ltd | 光集積回路の製造方法 |
| JPS6292386A (ja) * | 1985-10-17 | 1987-04-27 | Nec Corp | 光電子集積素子 |
| US5036023A (en) * | 1989-08-16 | 1991-07-30 | At&T Bell Laboratories | Rapid thermal processing method of making a semiconductor device |
| JPH047873A (ja) * | 1990-04-25 | 1992-01-13 | Furukawa Electric Co Ltd:The | 光電子集積回路 |
| JPH0964459A (ja) * | 1995-08-29 | 1997-03-07 | Mitsubishi Electric Corp | 半導体装置 |
| JP3705013B2 (ja) | 1999-05-24 | 2005-10-12 | 日本電気株式会社 | 半導体素子 |
| JP4072937B2 (ja) | 2001-05-11 | 2008-04-09 | 日本電信電話株式会社 | 半導体光素子 |
| JP2008098297A (ja) | 2006-10-10 | 2008-04-24 | Sumitomo Electric Ind Ltd | 半導体光素子 |
-
2009
- 2009-11-19 JP JP2009263472A patent/JP5451332B2/ja active Active
- 2009-12-01 US US12/628,834 patent/US8068526B2/en active Active
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