JP2006165527A5 - - Google Patents

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JP2006165527A5
JP2006165527A5 JP2005325364A JP2005325364A JP2006165527A5 JP 2006165527 A5 JP2006165527 A5 JP 2006165527A5 JP 2005325364 A JP2005325364 A JP 2005325364A JP 2005325364 A JP2005325364 A JP 2005325364A JP 2006165527 A5 JP2006165527 A5 JP 2006165527A5
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field effect
effect transistor
source
electrode
gate electrode
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JP2006165527A (ja
JP5118810B2 (ja
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JP2005325364A 2004-11-10 2005-11-09 電界効果型トランジスタ Expired - Lifetime JP5118810B2 (ja)

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JP2004326688 2004-11-10
JP2004326688 2004-11-10
JP2005325364A JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

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JP2006165527A JP2006165527A (ja) 2006-06-22
JP2006165527A5 true JP2006165527A5 (enExample) 2008-12-25
JP5118810B2 JP5118810B2 (ja) 2013-01-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film
US9245484B2 (en) 2009-10-21 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. E-book reader

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Publication number Priority date Publication date Assignee Title
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WO2008072486A1 (ja) 2006-12-13 2008-06-19 Idemitsu Kosan Co., Ltd. スパッタリングターゲット及び酸化物半導体膜
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JP5466940B2 (ja) * 2007-04-05 2014-04-09 出光興産株式会社 電界効果型トランジスタ及び電界効果型トランジスタの製造方法
JPWO2008139860A1 (ja) 2007-05-07 2010-07-29 出光興産株式会社 半導体薄膜、半導体薄膜の製造方法、および、半導体素子
US8748879B2 (en) 2007-05-08 2014-06-10 Idemitsu Kosan Co., Ltd. Semiconductor device, thin film transistor and a method for producing the same
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US8704217B2 (en) 2008-01-17 2014-04-22 Idemitsu Kosan Co., Ltd. Field effect transistor, semiconductor device and semiconductor device manufacturing method
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KR101224769B1 (ko) 2008-06-10 2013-01-21 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 스퍼터링용 산화물 소결체 타겟 및 그 제조 방법
US8945981B2 (en) * 2008-07-31 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
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US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
KR20160063402A (ko) * 2008-09-12 2016-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 디스플레이 장치
KR101545460B1 (ko) 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
KR101772377B1 (ko) 2008-09-12 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI633605B (zh) * 2008-10-31 2018-08-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TW201921700A (zh) 2008-11-07 2019-06-01 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
US7977151B2 (en) * 2009-04-21 2011-07-12 Cbrite Inc. Double self-aligned metal oxide TFT
CN104576748B (zh) 2009-06-30 2019-03-15 株式会社半导体能源研究所 半导体装置的制造方法
KR101457837B1 (ko) 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
TW201103090A (en) * 2009-07-01 2011-01-16 Univ Nat Chiao Tung Method for manufacturing a self-aligned thin film transistor and a structure of the same
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5507133B2 (ja) * 2009-07-03 2014-05-28 富士フイルム株式会社 ボトムゲート構造の薄膜トランジスタの製造方法
JP5403464B2 (ja) * 2009-08-14 2014-01-29 Ｎｌｔテクノロジー株式会社 薄膜デバイス及びその製造方法
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WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101751712B1 (ko) * 2009-10-30 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전압 조정 회로
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WO2011052411A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
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EP2497115A4 (en) 2009-11-06 2015-09-02 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
CN104393007A (zh) 2009-11-06 2015-03-04 株式会社半导体能源研究所 半导体装置
WO2011062041A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
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WO2011065209A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
CN105206514B (zh) 2009-11-28 2018-04-10 株式会社半导体能源研究所 层叠的氧化物材料、半导体器件、以及用于制造该半导体器件的方法
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WO2011089842A1 (en) 2010-01-20 2011-07-28 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
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WO2011105198A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
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KR102341927B1 (ko) * 2010-03-05 2021-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
PT105039A (pt) 2010-04-06 2011-10-06 Univ Nova De Lisboa Ligas de óxidos tipo p baseados em óxidos de cobre, óxidos estanho, óxidos de ligas de estanho-cobre e respectiva liga metálica, e óxido de níquel, com os respectivos metais embebidos, respectivo processo de fabrico e utilização
WO2011132625A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
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US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101862808B1 (ko) 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101746197B1 (ko) 2010-06-25 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치의 검사 방법
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US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2012014786A1 (en) * 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
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US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
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JP2016115907A (ja) * 2014-12-18 2016-06-23 三菱電機株式会社 薄膜トランジスタ及びその製造方法、アレイ基板並びに液晶表示装置
JP6851166B2 (ja) 2015-10-12 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
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TWI720097B (zh) 2016-07-11 2021-03-01 日商半導體能源硏究所股份有限公司 濺射靶材及濺射靶材的製造方法
WO2018100465A1 (ja) 2016-12-02 2018-06-07 株式会社半導体エネルギー研究所 半導体装置
JP7092746B2 (ja) 2017-03-30 2022-06-28 出光興産株式会社 酸化物焼結体、スパッタリングターゲット、酸化物半導体薄膜、薄膜トランジスタ、および電子機器
EP3979349A4 (en) 2019-05-24 2022-08-10 Sony Group Corporation IMAGING ELEMENT, LAMINATE-TYPE IMAGING ELEMENT, AND SOLID STATE IMAGING ELEMENT, AND METHOD OF MAKING THE IMAGING ELEMENT
US20240002998A1 (en) 2022-06-29 2024-01-04 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for forming sputtering target

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290622A (ja) * 1990-04-09 1991-12-20 Nippon Telegr & Teleph Corp <Ntt> 薄膜トランジスタ
JPH05251705A (ja) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) * 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JP2002289859A (ja) * 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film
US9245484B2 (en) 2009-10-21 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. E-book reader

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