JP2006165527A5 - - Google Patents

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Publication number
JP2006165527A5
JP2006165527A5 JP2005325364A JP2005325364A JP2006165527A5 JP 2006165527 A5 JP2006165527 A5 JP 2006165527A5 JP 2005325364 A JP2005325364 A JP 2005325364A JP 2005325364 A JP2005325364 A JP 2005325364A JP 2006165527 A5 JP2006165527 A5 JP 2006165527A5
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field effect
effect transistor
source
electrode
gate electrode
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JP2006165527A (ja
JP5118810B2 (ja
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JP2005325364A 2004-11-10 2005-11-09 電界効果型トランジスタ Expired - Lifetime JP5118810B2 (ja)

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JP2004326688 2004-11-10
JP2004326688 2004-11-10
JP2005325364A JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

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JP2006165527A JP2006165527A (ja) 2006-06-22
JP2006165527A5 true JP2006165527A5 (enExample) 2008-12-25
JP5118810B2 JP5118810B2 (ja) 2013-01-16

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film
US9245484B2 (en) 2009-10-21 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. E-book reader

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JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
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US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
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KR101829673B1 (ko) 2008-09-12 2018-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI501401B (zh) 2008-10-31 2015-09-21 Semiconductor Energy Lab 半導體裝置及其製造方法
TW202537432A (zh) 2008-11-07 2025-09-16 日商半導體能源研究所股份有限公司 顯示裝置
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
US7977151B2 (en) * 2009-04-21 2011-07-12 Cbrite Inc. Double self-aligned metal oxide TFT
WO2011002046A1 (en) 2009-06-30 2011-01-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR101805335B1 (ko) 2009-06-30 2017-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치, 및 전자 장비
TW201103090A (en) * 2009-07-01 2011-01-16 Univ Nat Chiao Tung Method for manufacturing a self-aligned thin film transistor and a structure of the same
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5507133B2 (ja) * 2009-07-03 2014-05-28 富士フイルム株式会社 ボトムゲート構造の薄膜トランジスタの製造方法
JP5403464B2 (ja) * 2009-08-14 2014-01-29 Ｎｌｔテクノロジー株式会社 薄膜デバイス及びその製造方法
EP2478563B1 (en) * 2009-09-16 2021-04-07 Semiconductor Energy Laboratory Co, Ltd. Method for manufacturing a samesemiconductor device
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JP2016115907A (ja) * 2014-12-18 2016-06-23 三菱電機株式会社 薄膜トランジスタ及びその製造方法、アレイ基板並びに液晶表示装置
JP6851166B2 (ja) 2015-10-12 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI811761B (zh) 2016-07-11 2023-08-11 日商半導體能源研究所股份有限公司 金屬氧化物及半導體裝置
TWI754542B (zh) 2016-07-11 2022-02-01 日商半導體能源研究所股份有限公司 濺射靶材及金屬氧化物
JP7085491B2 (ja) 2016-12-02 2022-06-16 株式会社半導体エネルギー研究所 半導体装置
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WO2020241169A1 (ja) 2019-05-24 2020-12-03 ソニー株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法
KR20240002704A (ko) 2022-06-29 2024-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃 및 스퍼터링용 타깃의 제작 방법

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8900916B2 (en) 2009-07-10 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including oxide semiconductor film
US9245484B2 (en) 2009-10-21 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. E-book reader

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