JP2006165527A5 - - Google Patents

Claims (6)

A field effect transistor,
A source electrode, a drain electrode, a gate electrode, and an active layer including an amorphous oxide having an electron carrier concentration of less than 10 ¹⁸ / cm ³ , and the gate electrode and the source and drain electrodes are self-aligned A field effect transistor.   2. The field effect transistor according to claim 1, wherein the amorphous oxide is an oxide containing any of In, Zn, and Sn.   2. The amorphous oxide is one of an oxide containing In, Zn, and Sn, an oxide containing In and Zn, an oxide containing In and Sn, and an oxide containing In. The field effect transistor described.   4. The field effect transistor according to claim 1, wherein the field effect transistor is a top gate transistor that forms a pattern of the gate electrode using the pattern of the source and drain electrodes formed on a transparent substrate as a mask. The field effect transistor according to any one of the above. Said field effect transistor, the patterns of the gate electrodes are formed on a transparent substrate as a mask, claims 1 to 3, wherein a bottom gate type transistor to form a pattern of source and drain electrodes The field effect transistor according to any one of the above. A field effect transistor,
A source electrode, a drain electrode, a gate electrode, and an active layer including an amorphous oxide;
A field effect transistor characterized in that the gate electrode and the source and drain electrodes are self-aligned and are normally-off type.