JP5118810B2 - 電界効果型トランジスタ - Google Patents

電界効果型トランジスタ Download PDF

Info

Publication number
JP5118810B2
JP5118810B2 JP2005325364A JP2005325364A JP5118810B2 JP 5118810 B2 JP5118810 B2 JP 5118810B2 JP 2005325364 A JP2005325364 A JP 2005325364A JP 2005325364 A JP2005325364 A JP 2005325364A JP 5118810 B2 JP5118810 B2 JP 5118810B2
Authority
JP
Japan
Prior art keywords
film
amorphous
transistor
thin film
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP2005325364A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006165527A (ja
JP2006165527A5 (enExample
Inventor
芳幸 長田
秀雄 細野
利夫 神谷
研二 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Tokyo Institute of Technology NUC
Original Assignee
Canon Inc
Tokyo Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc, Tokyo Institute of Technology NUC filed Critical Canon Inc
Priority to JP2005325364A priority Critical patent/JP5118810B2/ja
Publication of JP2006165527A publication Critical patent/JP2006165527A/ja
Publication of JP2006165527A5 publication Critical patent/JP2006165527A5/ja
Application granted granted Critical
Publication of JP5118810B2 publication Critical patent/JP5118810B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors

Landscapes

  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2005325364A 2004-11-10 2005-11-09 電界効果型トランジスタ Expired - Lifetime JP5118810B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005325364A JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004326688 2004-11-10
JP2004326688 2004-11-10
JP2005325364A JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

Publications (3)

Publication Number Publication Date
JP2006165527A JP2006165527A (ja) 2006-06-22
JP2006165527A5 JP2006165527A5 (enExample) 2008-12-25
JP5118810B2 true JP5118810B2 (ja) 2013-01-16

Family

ID=36667138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005325364A Expired - Lifetime JP5118810B2 (ja) 2004-11-10 2005-11-09 電界効果型トランジスタ

Country Status (1)

Country Link
JP (1) JP5118810B2 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734413B2 (en) 2016-07-11 2020-08-04 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and semiconductor device
US11075075B2 (en) 2016-12-02 2021-07-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide with multiple regions
US11081326B2 (en) 2016-07-11 2021-08-03 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing the same
KR20240002704A (ko) 2022-06-29 2024-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃 및 스퍼터링용 타깃의 제작 방법

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI429327B (zh) * 2005-06-30 2014-03-01 Semiconductor Energy Lab 半導體裝置、顯示裝置、及電子設備
JP5058469B2 (ja) * 2005-09-06 2012-10-24 キヤノン株式会社 スパッタリングターゲットおよび該ターゲットを用いた薄膜の形成方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
KR101257927B1 (ko) * 2006-08-18 2013-04-24 엘지디스플레이 주식회사 박막 트랜지스터 및 그 제조방법
EP2096188B1 (en) 2006-12-13 2014-01-29 Idemitsu Kosan Co., Ltd. Sputtering target
JP5466939B2 (ja) 2007-03-23 2014-04-09 出光興産株式会社 半導体デバイス、多結晶半導体薄膜、多結晶半導体薄膜の製造方法、電界効果型トランジスタ、及び、電界効果型トランジスタの製造方法
JP5244331B2 (ja) 2007-03-26 2013-07-24 出光興産株式会社 非晶質酸化物半導体薄膜、その製造方法、薄膜トランジスタの製造方法、電界効果型トランジスタ、発光装置、表示装置及びスパッタリングターゲット
WO2008126492A1 (ja) * 2007-04-05 2008-10-23 Idemitsu Kosan Co., Ltd. 電界効果型トランジスタ及び電界効果型トランジスタの製造方法
KR20100017549A (ko) 2007-05-07 2010-02-16 이데미쓰 고산 가부시키가이샤 반도체 박막, 반도체 박막의 제조 방법 및 반도체 소자
WO2008136505A1 (ja) 2007-05-08 2008-11-13 Idemitsu Kosan Co., Ltd. 半導体デバイス及び薄膜トランジスタ、並びに、それらの製造方法
JP5522889B2 (ja) 2007-05-11 2014-06-18 出光興産株式会社 Ｉｎ−Ｇａ−Ｚｎ−Ｓｎ系酸化物焼結体、及び物理成膜用ターゲット
TWI467761B (zh) * 2008-01-17 2015-01-01 Idemitsu Kosan Co Field effect transistor, semiconductor device and manufacturing method thereof
JP2009206388A (ja) * 2008-02-29 2009-09-10 Toyama Univ 薄膜トランジスタとその製造方法
JP5202630B2 (ja) 2008-06-10 2013-06-05 Ｊｘ日鉱日石金属株式会社 スパッタリング用酸化物焼結体ターゲット及びその製造方法
TWI622175B (zh) * 2008-07-31 2018-04-21 半導體能源研究所股份有限公司 半導體裝置
JP2010056541A (ja) 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TWI500159B (zh) 2008-07-31 2015-09-11 Semiconductor Energy Lab 半導體裝置和其製造方法
TWI508282B (zh) * 2008-08-08 2015-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
US9082857B2 (en) 2008-09-01 2015-07-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising an oxide semiconductor layer
WO2010029885A1 (en) 2008-09-12 2010-03-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101623224B1 (ko) 2008-09-12 2016-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제조 방법
KR101644406B1 (ko) 2008-09-12 2016-08-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
TWI567829B (zh) 2008-10-31 2017-01-21 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN101740631B (zh) * 2008-11-07 2014-07-16 株式会社半导体能源研究所 半导体装置及该半导体装置的制造方法
TWI574423B (zh) 2008-11-07 2017-03-11 半導體能源研究所股份有限公司 半導體裝置和其製造方法
US7977151B2 (en) * 2009-04-21 2011-07-12 Cbrite Inc. Double self-aligned metal oxide TFT
KR101457837B1 (ko) * 2009-06-30 2014-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제작 방법
KR102256492B1 (ko) 2009-06-30 2021-05-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
TW201103090A (en) * 2009-07-01 2011-01-16 Univ Nat Chiao Tung Method for manufacturing a self-aligned thin film transistor and a structure of the same
JP5663214B2 (ja) * 2009-07-03 2015-02-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5507133B2 (ja) * 2009-07-03 2014-05-28 富士フイルム株式会社 ボトムゲート構造の薄膜トランジスタの製造方法
CN104835850B (zh) 2009-07-10 2018-10-26 株式会社半导体能源研究所 半导体器件
JP5403464B2 (ja) * 2009-08-14 2014-01-29 Ｎｌｔテクノロジー株式会社 薄膜デバイス及びその製造方法
WO2011033993A1 (en) * 2009-09-16 2011-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011043162A1 (en) 2009-10-09 2011-04-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the semiconductor device
IN2012DN01823A (enExample) 2009-10-16 2015-06-05 Semiconductor Energy Lab
KR101698751B1 (ko) 2009-10-16 2017-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 표시 장치 및 전자 장치
KR101772639B1 (ko) 2009-10-16 2017-08-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105702688B (zh) 2009-10-21 2020-09-08 株式会社半导体能源研究所 液晶显示器件及包括该液晶显示器件的电子设备
KR20170024130A (ko) 2009-10-21 2017-03-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
KR20220038542A (ko) 2009-10-21 2022-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 아날로그 회로 및 반도체 장치
WO2011048923A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. E-book reader
KR101751908B1 (ko) 2009-10-21 2017-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 전압 조정 회로
KR101490726B1 (ko) 2009-10-21 2015-02-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN107731931B (zh) 2009-10-21 2021-03-23 株式会社半导体能源研究所 显示装置和包括显示装置的电子设备
WO2011052410A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Power diode, rectifier, and semiconductor device including the same
KR20120099657A (ko) 2009-10-30 2012-09-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 트랜지스터
WO2011052437A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
CN102668096B (zh) 2009-10-30 2015-04-29 株式会社半导体能源研究所 半导体装置及其制造方法
WO2011052411A1 (en) 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101796909B1 (ko) 2009-10-30 2017-12-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 비선형 소자, 표시 장치, 및 전자 기기
WO2011052366A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
KR101837102B1 (ko) 2009-10-30 2018-03-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101876473B1 (ko) 2009-11-06 2018-07-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
KR101605984B1 (ko) 2009-11-06 2016-03-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101824123B1 (ko) 2009-11-06 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN103151266B (zh) 2009-11-20 2016-08-03 株式会社半导体能源研究所 用于制造半导体器件的方法
WO2011062041A1 (en) 2009-11-20 2011-05-26 Semiconductor Energy Laboratory Co., Ltd. Transistor
KR101800852B1 (ko) 2009-11-20 2017-12-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011065209A1 (en) 2009-11-27 2011-06-03 Semiconductor Energy Laboratory Co., Ltd. Non-linear element, display device including non-linear element, and electronic device including display device
KR101825345B1 (ko) 2009-11-28 2018-02-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 적층 산화물 재료, 반도체 장치 및 반도체 장치의 제작 방법
KR101824124B1 (ko) 2009-11-28 2018-02-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011068025A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Dc converter circuit and power supply circuit
WO2011068016A1 (en) 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011068028A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
CN102640207A (zh) 2009-12-18 2012-08-15 株式会社半导体能源研究所 液晶显示装置及其驱动方法
KR102352590B1 (ko) * 2009-12-18 2022-01-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치 및 전자 기기
KR102011801B1 (ko) 2010-01-20 2019-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치의 구동 방법
KR101842860B1 (ko) 2010-01-20 2018-03-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치의 구동 방법
TWI525377B (zh) 2010-01-24 2016-03-11 半導體能源研究所股份有限公司 顯示裝置
KR102135326B1 (ko) 2010-01-24 2020-07-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR101805378B1 (ko) 2010-01-24 2017-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치와 이의 제조 방법
CN105405747B (zh) 2010-02-05 2020-03-13 株式会社半导体能源研究所 半导体装置和制造半导体装置的方法
KR101950364B1 (ko) 2010-02-26 2019-02-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 액정 표시 장치
WO2011105198A1 (en) 2010-02-26 2011-09-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20130009978A (ko) 2010-02-26 2013-01-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 소자의 제조 방법 및 성막 장치
KR20180001562A (ko) 2010-02-26 2018-01-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치를 제작하기 위한 방법
KR102341927B1 (ko) 2010-03-05 2021-12-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
PT105039A (pt) 2010-04-06 2011-10-06 Univ Nova De Lisboa Ligas de óxidos tipo p baseados em óxidos de cobre, óxidos estanho, óxidos de ligas de estanho-cobre e respectiva liga metálica, e óxido de níquel, com os respectivos metais embebidos, respectivo processo de fabrico e utilização
KR101877377B1 (ko) * 2010-04-23 2018-07-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
US8890555B2 (en) 2010-04-28 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for measuring transistor
JP5797449B2 (ja) 2010-05-13 2015-10-21 株式会社半導体エネルギー研究所 半導体装置の評価方法
US9496405B2 (en) 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
WO2011145484A1 (en) 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR101862808B1 (ko) 2010-06-18 2018-05-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101746197B1 (ko) 2010-06-25 2017-06-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법 및 반도체 장치의 검사 방법
JP5771079B2 (ja) * 2010-07-01 2015-08-26 株式会社半導体エネルギー研究所 撮像装置
WO2012002040A1 (en) 2010-07-01 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Driving method of liquid crystal display device
US8642380B2 (en) 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2012014786A1 (en) * 2010-07-30 2012-02-02 Semiconductor Energy Laboratory Co., Ltd. Semicondcutor device and manufacturing method thereof
US9660092B2 (en) 2011-08-31 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor thin film transistor including oxygen release layer
JP5920967B2 (ja) * 2011-09-20 2016-05-24 株式会社アルバック Ｉｇｚｏ膜の形成方法及び薄膜トランジスタの製造方法
CN104170001B (zh) 2012-03-13 2017-03-01 株式会社半导体能源研究所 发光装置及其驱动方法
US8941113B2 (en) 2012-03-30 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and manufacturing method of semiconductor element
US9324747B2 (en) 2014-03-13 2016-04-26 Semiconductor Energy Laboratory Co., Ltd. Imaging device
TWI660490B (zh) 2014-03-13 2019-05-21 日商半導體能源研究所股份有限公司 攝像裝置
KR102380829B1 (ko) 2014-04-23 2022-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 촬상 장치
JP2016115907A (ja) * 2014-12-18 2016-06-23 三菱電機株式会社 薄膜トランジスタ及びその製造方法、アレイ基板並びに液晶表示装置
JP6851166B2 (ja) 2015-10-12 2021-03-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
US11447421B2 (en) 2017-03-30 2022-09-20 Idemitsu Kosan Co., Ltd. Garnet compound, oxide sintered compact, oxide semiconductor thin film, thin film transistor, electronic device and image sensor
JP7559753B2 (ja) 2019-05-24 2024-10-02 ソニーグループ株式会社 撮像素子、積層型撮像素子及び固体撮像装置、並びに、撮像素子の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03290622A (ja) * 1990-04-09 1991-12-20 Nippon Telegr & Teleph Corp <Ntt> 薄膜トランジスタ
JPH05251705A (ja) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) * 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
JP2002289859A (ja) * 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734413B2 (en) 2016-07-11 2020-08-04 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and semiconductor device
US10950634B2 (en) 2016-07-11 2021-03-16 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and semiconductor device
US11081326B2 (en) 2016-07-11 2021-08-03 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing the same
US11658185B2 (en) 2016-07-11 2023-05-23 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and semiconductor device
US11735403B2 (en) 2016-07-11 2023-08-22 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and method for manufacturing the same
US12446316B2 (en) 2016-07-11 2025-10-14 Semiconductor Energy Laboratory Co., Ltd. Metal oxide and semiconductor device
US11075075B2 (en) 2016-12-02 2021-07-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including metal oxide with multiple regions
US11688602B2 (en) 2016-12-02 2023-06-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with electrodes over oxide semiconductor
KR20240002704A (ko) 2022-06-29 2024-01-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링용 타깃 및 스퍼터링용 타깃의 제작 방법

Also Published As

Publication number Publication date
JP2006165527A (ja) 2006-06-22

Similar Documents

Publication Publication Date Title
JP5118810B2 (ja) 電界効果型トランジスタ
JP5138163B2 (ja) 電界効果型トランジスタ
JP5337849B2 (ja) 非晶質酸化物、及び電界効果型トランジスタ
JP4620046B2 (ja) 薄膜トランジスタ及びその製造方法
JP5118812B2 (ja) 電界効果型トランジスタ
JP5053537B2 (ja) 非晶質酸化物を利用した半導体デバイス
JP5401573B2 (ja) 電界効果型トランジスタの製造方法
JP5126730B2 (ja) 電界効果型トランジスタの製造方法
JP5466940B2 (ja) 電界効果型トランジスタ及び電界効果型トランジスタの製造方法
JP2012231153A (ja) 非晶質酸化物を利用した半導体デバイス

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20080207

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081107

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081107

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20090225

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20090318

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090326

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100617

RD05 Notification of revocation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7425

Effective date: 20100730

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20101227

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111222

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111226

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120224

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120709

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120905

RD03 Notification of appointment of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7423

Effective date: 20120914

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120925

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20120914

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121022

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 5118810

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151026

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

S533 Written request for registration of change of name

Free format text: JAPANESE INTERMEDIATE CODE: R313533

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250