JP2006041495A5 - - Google Patents

Download PDF

Info

Publication number
JP2006041495A5
JP2006041495A5 JP2005180203A JP2005180203A JP2006041495A5 JP 2006041495 A5 JP2006041495 A5 JP 2006041495A5 JP 2005180203 A JP2005180203 A JP 2005180203A JP 2005180203 A JP2005180203 A JP 2005180203A JP 2006041495 A5 JP2006041495 A5 JP 2006041495A5
Authority
JP
Japan
Prior art keywords
semiconductor
particles
semiconductor element
precursor
binder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005180203A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006041495A (ja
JP4285448B2 (ja
Filing date
Publication date
Priority claimed from GB0416124A external-priority patent/GB2416428A/en
Application filed filed Critical
Publication of JP2006041495A publication Critical patent/JP2006041495A/ja
Publication of JP2006041495A5 publication Critical patent/JP2006041495A5/ja
Application granted granted Critical
Publication of JP4285448B2 publication Critical patent/JP4285448B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2005180203A 2004-07-19 2005-06-21 有機半導体要素の製造方法および電子装置の製造方法 Expired - Fee Related JP4285448B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0416124A GB2416428A (en) 2004-07-19 2004-07-19 Method for fabricating a semiconductor element from a dispersion of semiconductor particles

Publications (3)

Publication Number Publication Date
JP2006041495A JP2006041495A (ja) 2006-02-09
JP2006041495A5 true JP2006041495A5 (https=) 2006-10-26
JP4285448B2 JP4285448B2 (ja) 2009-06-24

Family

ID=32893813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005180203A Expired - Fee Related JP4285448B2 (ja) 2004-07-19 2005-06-21 有機半導体要素の製造方法および電子装置の製造方法

Country Status (5)

Country Link
US (1) US7517719B2 (https=)
JP (1) JP4285448B2 (https=)
KR (1) KR100702412B1 (https=)
CN (1) CN1725455A (https=)
GB (1) GB2416428A (https=)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060116534A (ko) * 2005-05-10 2006-11-15 삼성에스디아이 주식회사 박막 트랜지스터, 그 제조 방법 및 이를 구비한 평판 표시장치
GB2430546A (en) * 2005-09-20 2007-03-28 Seiko Epson Corp A semiconductor film comprising domains of an organic semiconductor and a method of its fabrication
GB0523163D0 (en) * 2005-11-14 2005-12-21 Suisse Electronique Microtech Patterning of conductive layers with underlying compressible spacer layer or spacer layer stack
KR20080096781A (ko) * 2006-01-21 2008-11-03 메르크 파텐트 게엠베하 유기 반도체 조성물을 포함하는 전자 단채널 소자
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
US7795145B2 (en) * 2006-02-15 2010-09-14 Basf Aktiengesellschaft Patterning crystalline compounds on surfaces
JP2007273949A (ja) * 2006-03-30 2007-10-18 Korea Univ Industrial & Academic Collaboration Foundation ナノ粒子を用いたトップゲート型薄膜トランジスタおよびその製造方法
JP2007294719A (ja) * 2006-04-26 2007-11-08 Konica Minolta Holdings Inc 有機薄膜トランジスタ
US7494841B2 (en) * 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
GB0612929D0 (en) * 2006-06-29 2006-08-09 Univ Cambridge Tech High-performance organic field-effect transistors based on dilute, crystalline-crystalline polymer blends and block copolymers
JP4379450B2 (ja) * 2006-08-22 2009-12-09 ソニー株式会社 電子デバイス及びその製造方法
JP5504564B2 (ja) * 2007-01-16 2014-05-28 ソニー株式会社 半導体装置の製造方法
DE102007043920A1 (de) 2007-07-17 2009-01-22 Merck Patent Gmbh Funktionelles Material für gedruckte elektronische Bauteile
JP5407242B2 (ja) * 2007-09-28 2014-02-05 大日本印刷株式会社 エレクトロルミネッセンス素子
JP5303955B2 (ja) * 2008-02-19 2013-10-02 ソニー株式会社 半導体装置および有機半導体薄膜
TW201005813A (en) 2008-05-15 2010-02-01 Du Pont Process for forming an electroactive layer
DE102009004491A1 (de) 2009-01-09 2010-07-15 Merck Patent Gmbh Funktionelles Material für gedruckte elektronische Bauteile
EP2404315A4 (en) 2009-03-06 2012-08-08 Du Pont METHOD FOR FORMING AN ELECTROACTIVE LAYER
CN102362338A (zh) 2009-03-09 2012-02-22 E.I.内穆尔杜邦公司 形成电活性层的方法
JP2012519950A (ja) 2009-03-09 2012-08-30 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー 電気活性層の形成方法
JP4894957B2 (ja) * 2009-03-31 2012-03-14 Dic株式会社 有機半導体インキ組成物及びこれを用いた有機半導体パターン形成方法
US8164089B2 (en) * 2009-10-08 2012-04-24 Xerox Corporation Electronic device
US8603705B2 (en) 2010-03-31 2013-12-10 Georgia Tech Research Corporation Polymer film-producing methods and devices produced therefrom
WO2012067283A1 (ko) * 2010-11-17 2012-05-24 한국생산기술연구원 전자 회로용 반도체 박막의 제조방법
DE102011016567B4 (de) * 2011-04-08 2023-05-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes Bauelement
JP6120284B2 (ja) * 2011-11-11 2017-04-26 国立研究開発法人理化学研究所 コロイド分散液、その製造方法、およびその利用
JP6095045B2 (ja) * 2012-09-13 2017-03-15 国立研究開発法人理化学研究所 有機半導体素子の製造方法
CN104867876B (zh) * 2014-02-24 2017-11-14 清华大学 薄膜晶体管阵列的制备方法
CN105185884A (zh) * 2015-06-11 2015-12-23 上海电力学院 一种柔性二维材料发光器件
TWI564294B (zh) 2015-08-24 2017-01-01 國立清華大學 載子產生材料與有機發光二極體
CN105698977A (zh) * 2016-03-19 2016-06-22 复旦大学 WTe2单晶作为低温压力传感器材料的应用
RU198545U1 (ru) * 2020-02-26 2020-07-15 Общество с ограниченной ответственностью "Сенсор Микрон" Устройство для соединения полупроводниковых пластин
EP4476544A2 (en) * 2022-02-10 2024-12-18 Massachusetts Institute Of Technology Lateral flow assay for quantitative and ultrasensitive detection of analyte

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2813428B2 (ja) 1989-08-17 1998-10-22 三菱電機株式会社 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置
KR0169411B1 (ko) * 1995-06-23 1999-03-20 신현주 구리 박막 증착용 전구체 화합물 및 이의 제조방법
JP3794073B2 (ja) * 1996-09-19 2006-07-05 富士ゼロックス株式会社 光起電力を用いた画像形成方法及び画像形成部材
EP0859385A1 (en) 1997-02-17 1998-08-19 Monsanto Company Method for the manufacture of photovoltaic cell
US5871579A (en) * 1997-09-25 1999-02-16 International Business Machines Corporation Two-step dipping technique for the preparation of organic-inorganic perovskite thin films
EP1020881A3 (en) * 1999-01-14 2004-10-20 Fuji Photo Film Co., Ltd. Photo-electrochemical cell
US6180956B1 (en) * 1999-03-03 2001-01-30 International Business Machine Corp. Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
JP2001036110A (ja) 1999-07-16 2001-02-09 Fuji Photo Film Co Ltd 半導体微粒子、光電変換素子ならびに半導体微粒子の製造方法
WO2001026425A1 (en) * 1999-10-05 2001-04-12 Matsushita Electric Industrial Co., Ltd. Luminescent device and method for manufacturing the same, and display and illuminator comprising the same
JP4255610B2 (ja) * 1999-12-28 2009-04-15 出光興産株式会社 白色系有機エレクトロルミネッセンス素子
US6429318B1 (en) * 2000-02-07 2002-08-06 International Business Machines Corporaiton Layered organic-inorganic perovskites having metal-deficient inorganic frameworks
JP3991602B2 (ja) 2001-03-02 2007-10-17 富士ゼロックス株式会社 カーボンナノチューブ構造体の製造方法、配線部材の製造方法および配線部材
JP4341197B2 (ja) 2001-04-18 2009-10-07 パナソニック電工株式会社 光電変換素子及びその製造方法
US7199515B2 (en) * 2001-06-01 2007-04-03 Semiconductor Energy Laboratory Co., Ltd. Organic light emitting element and light emitting device using the element
US6690029B1 (en) * 2001-08-24 2004-02-10 University Of Kentucky Research Foundation Substituted pentacenes and electronic devices made with substituted pentacenes
JP5061414B2 (ja) * 2001-09-27 2012-10-31 東レ株式会社 薄膜トランジスタ素子
EP1306909A1 (en) * 2001-10-24 2003-05-02 Interuniversitair Micro-Elektronica Centrum Ambipolar organic transistors
US6963080B2 (en) * 2001-11-26 2005-11-08 International Business Machines Corporation Thin film transistors using solution processed pentacene precursor as organic semiconductor
US7193237B2 (en) * 2002-03-27 2007-03-20 Mitsubishi Chemical Corporation Organic semiconductor material and organic electronic device
WO2003089515A1 (en) 2002-04-22 2003-10-30 Konica Minolta Holdings, Inc. Organic semiconductor composition, organic semiconductor element, and process for producing the same
DE10219121A1 (de) 2002-04-29 2003-11-27 Infineon Technologies Ag Siliziumpartikel als Additive zur Verbesserung der Ladungsträgermobilität in organischen Halbleitern
US6905667B1 (en) * 2002-05-02 2005-06-14 Zyvex Corporation Polymer and method for using the polymer for noncovalently functionalizing nanotubes
KR20050016640A (ko) * 2002-06-24 2005-02-21 꼼미사리아 아 레네르지 아토미끄 열분해에 의한 탄소 나노튜브 또는 질소-첨가된 탄소나노튜브의 증착 방법 및 장치
JP4635410B2 (ja) 2002-07-02 2011-02-23 ソニー株式会社 半導体装置及びその製造方法
JP4687107B2 (ja) * 2002-09-25 2011-05-25 コニカミノルタホールディングス株式会社 電気回路、薄膜トランジスタ、電気回路の製造方法及び薄膜トランジスタの製造方法
US7051945B2 (en) * 2002-09-30 2006-05-30 Nanosys, Inc Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites
US6803262B2 (en) * 2002-10-17 2004-10-12 Xerox Corporation Process using self-organizable polymer
GB0224871D0 (en) * 2002-10-25 2002-12-04 Plastic Logic Ltd Self-aligned doping of source-drain contacts
US7078261B2 (en) * 2002-12-16 2006-07-18 The Regents Of The University Of California Increased mobility from organic semiconducting polymers field-effect transistors
US20040183070A1 (en) * 2003-03-21 2004-09-23 International Business Machines Corporation Solution processed pentacene-acceptor heterojunctions in diodes, photodiodes, and photovoltaic cells and method of making same
WO2004087836A1 (en) * 2003-03-31 2004-10-14 Canon Kabushiki Kaisha Field effect transistor and method of producing the same
KR100581005B1 (ko) * 2003-05-27 2006-05-17 한국과학기술연구원 단일전구체와 열화학증착법을 이용한 탄화규소 나노로드및 나노와이어의 성장방법
US6875661B2 (en) * 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
US20050056969A1 (en) * 2003-09-16 2005-03-17 Eastman Kodak Company Forming homogeneous mixtures of organic materials for physical vapor deposition using a solvent
US6963081B2 (en) * 2003-09-30 2005-11-08 Osram Otpo Semiconductors Gmbh Interfacial trap layer to improve carrier injection
US7115900B2 (en) * 2003-11-26 2006-10-03 Lucent Technologies Inc. Devices having patterned regions of polycrystalline organic semiconductors, and methods of making the same
TWI228833B (en) * 2004-05-04 2005-03-01 Ind Tech Res Inst Method for enhancing the electrical characteristics of organic electronic devices
US7067841B2 (en) * 2004-04-22 2006-06-27 E. I. Du Pont De Nemours And Company Organic electronic devices
US20060060839A1 (en) * 2004-09-22 2006-03-23 Chandross Edwin A Organic semiconductor composition

Similar Documents

Publication Publication Date Title
JP2006041495A5 (https=)
Wang et al. Multifunctional features of organic charge‐transfer complexes: advances and perspectives
CN103987715B (zh) 含氮芳香族化合物、有机半导体材料及有机电子器件
JP4285448B2 (ja) 有機半導体要素の製造方法および電子装置の製造方法
JP5767237B2 (ja) 含窒素芳香族化合物、有機半導体材料及び有機電子デバイス
JP2019108350A (ja) 金属錯体および有機発光素子
TW200904821A (en) Silylethynylated heteroacenes and electronic devices made therewith
JP2010509789A5 (https=)
CN102906152A (zh) 含芴、蒽和苯并噻二唑单元的聚合物及其制备方法和应用
JP5978228B2 (ja) 有機半導体材料及び有機電子デバイス
JP4936886B2 (ja) 有機太陽電池又は光検出器の製造方法。
JP5652712B2 (ja) 光電変換素子及びその製造方法、並びにインク
JPWO2013187482A1 (ja) タンデム型有機光電変換素子およびこれを用いた太陽電池
JP6090166B2 (ja) 有機光電変換素子およびこれを用いた太陽電池
CN1783530B (zh) 半导体器件及其制造方法
Kumari et al. Enhanced Charge Carrier Mobility and Tailored Luminescence of n‐Type Organic Semiconductor through Block Copolymer Supramolecular Assembly
JP6647106B2 (ja) 有機半導体材料及び有機半導体デバイス
WO2006054686A1 (ja) 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ
US20070225491A1 (en) Phthalocyanine Derivatives, Their use as Homeotropically Aligned Layer in Electronic Devices and Method for the Manufacturing Thereof
CN104371206B (zh) 交联聚苯乙烯材料及其制备方法、用途
CN103618046A (zh) 石墨烯量子点/聚(3,4-亚乙二氧基噻吩)-聚(苯乙烯磺酸)材料的存储器件及制备
CN103642145B (zh) 具有存储效应的石墨烯量子点/聚对乙烯基苯酚复合材料及其制备方法和用途
JP2013091712A (ja) 共役系高分子化合物およびこれを用いた有機光電変換素子
CN103635482B (zh) 钴配合物在制备光伏电池中的活性层中的用途以及相应的光伏电池
TW200305352A (en) Electroluminescent device