JP5978228B2 - 有機半導体材料及び有機電子デバイス - Google Patents
有機半導体材料及び有機電子デバイス Download PDFInfo
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- JP5978228B2 JP5978228B2 JP2013548219A JP2013548219A JP5978228B2 JP 5978228 B2 JP5978228 B2 JP 5978228B2 JP 2013548219 A JP2013548219 A JP 2013548219A JP 2013548219 A JP2013548219 A JP 2013548219A JP 5978228 B2 JP5978228 B2 JP 5978228B2
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- 125000004649 C2-C8 alkynyl group Chemical group 0.000 description 1
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- 125000004423 acyloxy group Chemical group 0.000 description 1
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- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
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- 239000007864 aqueous solution Substances 0.000 description 1
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- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
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- 125000004122 cyclic group Chemical group 0.000 description 1
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- LYGJENNIWJXYER-UHFFFAOYSA-N nitromethane Chemical compound C[N+]([O-])=O LYGJENNIWJXYER-UHFFFAOYSA-N 0.000 description 1
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- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- 125000005007 perfluorooctyl group Chemical group FC(C(C(C(C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)F)(F)* 0.000 description 1
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- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 125000002112 pyrrolidino group Chemical group [*]N1C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-L terephthalate(2-) Chemical compound [O-]C(=O)C1=CC=C(C([O-])=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-L 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
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- ALYPESYVXOPFNK-UHFFFAOYSA-N thieno[2',3':4,5]thieno[3,2-b]thieno[2',3':4,5]thieno[2,3-d]thiophene Chemical compound C1=CSC2=C1SC1=C2SC2=C1SC1=C2SC=C1 ALYPESYVXOPFNK-UHFFFAOYSA-N 0.000 description 1
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- 229930195735 unsaturated hydrocarbon Chemical group 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
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-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07D—HETEROCYCLIC COMPOUNDS
- C07D487/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00
- C07D487/22—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, not provided for by groups C07D451/00 - C07D477/00 in which the condensed system contains four or more hetero rings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Nitrogen Condensed Heterocyclic Rings (AREA)
- Photovoltaic Devices (AREA)
Description
式(B)に示すように、n−ブロモインドールと2-クロロ-n-ブロモベンズアルデヒドを用いる方法により中間体B-3を得た後、B-3とアルキン誘導体のソノガシラ反応を行うことにより、所望のアルキル置換体である化合物(3)を得ることができる。
符号の説明;
1 基板、2 ゲート電極、3 絶縁膜層、4 有機半導体層、5 ソース電極、6 ドレイン電極、7 基板、8 正極、9 有機半導体層、9-a 電子供与性有機半導体層、9-b 電子受容性有機半導体層、10 負極。
有機半導体層は、式(1)で表される化合物を含む有機半導体材料を用いて形成される。式(1)で表される化合物は、p型有機半導体材料(以下p型有機材料という)またはn型有機半導体材料(以下n型有機材料という)として機能し、本発明の有機半導体材料は式(1)で表される化合物を含み、式(1)で表される化合物はp型有機材料またはn型有機材料の少なくとも1つに含まれる。式(1)で表される化合物を2種以上使用し、その1以上をp型有機材料成分とし、他の1以上をn型有機材料成分としてもよく、p型有機材料成分(またはn型有機材料成分)として式(1)で表される化合物を使用し、n型有機材料成分(またはp型有機材料成分)として式(1)で表される化合物以外の化合物を使用してもよい。
上記式(A)にしたがって、化合物(100)を合成した。
1H−NMR(DMSO-d6):δ7.65(s、2H)、6.80-7.30(m、12H)、6.42(s、2H)、6.17(s、1H)
膜厚150 nmのITO基板上に、合成例1で合成した化合物(100)を真空蒸着法により蒸着製膜し膜厚が約2.5 mmの有機半導体膜を形成した後、銀を真空蒸着法により170 nm蒸着製膜した。得られた素子をTOF法により、電荷移動度を評価した。その結果電界強度53.6 MV/cmにおいて、正孔移動度が2.6×10-2 cm2/Vsであった。
本発明の有機半導体材料の特性を、図1に示す構成の有機電界効果トランジスタを作成し、評価した。まず、約300nmの厚みの熱成長酸化ケイ素層を有するシリコンウェハ(nドープ)を、硫酸−過酸化水素水溶液で洗浄し、イソプロピルアルコールで煮沸した後、乾燥した。得られたシリコンウェハにフォトレジストをスピンコート後、フォトマスクを介して露光機により露光した。次いで、現像液で現像を行った後、イオン交換水で洗浄し、空気乾燥した。そのパターニングされたフォトレジストが塗布されたシリコンウェハ上に、真空蒸着法により、厚さ3nmのクロム、更にその上から50nmの金を蒸着した。そのシリコンウェハを、リムーバー溶液に浸すことでシリコンウェハ上にソース電極およびドレイン電極を作製した。ソース電極およびドレイン電極が作成されたシリコンウェハをアセトンで洗浄し、さらに、イソプロピルアルコールで煮沸し乾燥した有機電界効果トランジスタ基板を作製した。チャネル長はL=25μm、チャネル幅はW=15.6cmであった。
次に、実施例1で得た化合物(100)を真空蒸着法により蒸着製膜し膜厚が50nmの有機半導体膜を基板上に形成した。このようにして図1に示す構造を有する有機電界効果トランジスタを得た。得られた有機電界効果トランジスタの特性を評価したところ、移動度;2.0×10-1cm2/Vsであった。
実施例2において、化合物(100)の代わりに、ペンタセンを使用し、同様の操作を行い、有機電界効果トランジスタ素子を作製した。得られた素子を実施例2と同様に評価したところ、移動度;1.0×10-1cm2/Vsであった。
Claims (8)
- 請求項1または2に記載の有機半導体材料から形成されたことを特徴とする有機半導体膜。
- 請求項1または2に記載の有機半導体材料の有機溶媒溶液を塗布・乾燥して形成することを特徴とする有機半導体膜の製造方法。
- 請求項1または2に記載の有機半導体材料を用いることを特徴とする有機電子デバイス。
- 有機電子デバイスが、発光素子、有機薄膜トランジスタ素子又は光起電力素子のいずれかである請求項5に記載の有機電子デバイス。
- 有機電子デバイスが、有機薄膜トランジスタ素子又は光起電力素子のいずれかである請求項5に記載の有機電子デバイス。
- 有機電子デバイスが、有機薄膜トランジスタ素子である請求項5に記載の有機電子デバイス。
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