GB2416428A - Method for fabricating a semiconductor element from a dispersion of semiconductor particles - Google Patents

Method for fabricating a semiconductor element from a dispersion of semiconductor particles Download PDF

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Publication number
GB2416428A
GB2416428A GB0416124A GB0416124A GB2416428A GB 2416428 A GB2416428 A GB 2416428A GB 0416124 A GB0416124 A GB 0416124A GB 0416124 A GB0416124 A GB 0416124A GB 2416428 A GB2416428 A GB 2416428A
Authority
GB
United Kingdom
Prior art keywords
semiconductor
particles
precursor
semiconductor element
binder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0416124A
Other languages
English (en)
Other versions
GB0416124D0 (en
Inventor
Thomas Kugler
Christopher Newsome
David Russell
Shunpu Li
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to GB0416124A priority Critical patent/GB2416428A/en
Publication of GB0416124D0 publication Critical patent/GB0416124D0/en
Priority to US11/125,138 priority patent/US7517719B2/en
Priority to KR1020050045497A priority patent/KR100702412B1/ko
Priority to JP2005180203A priority patent/JP4285448B2/ja
Priority to CNA2005100833980A priority patent/CN1725455A/zh
Publication of GB2416428A publication Critical patent/GB2416428A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3461—Nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/656—Aromatic compounds comprising a hetero atom comprising two or more different heteroatoms per ring
    • H10K85/6565—Oxadiazole compounds

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Electroluminescent Light Sources (AREA)
GB0416124A 2004-07-19 2004-07-19 Method for fabricating a semiconductor element from a dispersion of semiconductor particles Withdrawn GB2416428A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB0416124A GB2416428A (en) 2004-07-19 2004-07-19 Method for fabricating a semiconductor element from a dispersion of semiconductor particles
US11/125,138 US7517719B2 (en) 2004-07-19 2005-05-10 Method for fabricating a semiconductor element from a dispersion of semiconductor particles
KR1020050045497A KR100702412B1 (ko) 2004-07-19 2005-05-30 반도체 입자의 분산체로 반도체 소자를 제조하는 방법
JP2005180203A JP4285448B2 (ja) 2004-07-19 2005-06-21 有機半導体要素の製造方法および電子装置の製造方法
CNA2005100833980A CN1725455A (zh) 2004-07-19 2005-07-18 用半导体微粒的分散体制造半导体器件的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB0416124A GB2416428A (en) 2004-07-19 2004-07-19 Method for fabricating a semiconductor element from a dispersion of semiconductor particles

Publications (2)

Publication Number Publication Date
GB0416124D0 GB0416124D0 (en) 2004-08-18
GB2416428A true GB2416428A (en) 2006-01-25

Family

ID=32893813

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0416124A Withdrawn GB2416428A (en) 2004-07-19 2004-07-19 Method for fabricating a semiconductor element from a dispersion of semiconductor particles

Country Status (5)

Country Link
US (1) US7517719B2 (https=)
JP (1) JP4285448B2 (https=)
KR (1) KR100702412B1 (https=)
CN (1) CN1725455A (https=)
GB (1) GB2416428A (https=)

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US7795145B2 (en) * 2006-02-15 2010-09-14 Basf Aktiengesellschaft Patterning crystalline compounds on surfaces
JP2007273949A (ja) * 2006-03-30 2007-10-18 Korea Univ Industrial & Academic Collaboration Foundation ナノ粒子を用いたトップゲート型薄膜トランジスタおよびその製造方法
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WO2012067283A1 (ko) * 2010-11-17 2012-05-24 한국생산기술연구원 전자 회로용 반도체 박막의 제조방법
DE102011016567B4 (de) * 2011-04-08 2023-05-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines optoelektronischen Bauelements und derart hergestelltes Bauelement
JP6120284B2 (ja) * 2011-11-11 2017-04-26 国立研究開発法人理化学研究所 コロイド分散液、その製造方法、およびその利用
JP6095045B2 (ja) * 2012-09-13 2017-03-15 国立研究開発法人理化学研究所 有機半導体素子の製造方法
CN104867876B (zh) * 2014-02-24 2017-11-14 清华大学 薄膜晶体管阵列的制备方法
CN105185884A (zh) * 2015-06-11 2015-12-23 上海电力学院 一种柔性二维材料发光器件
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Also Published As

Publication number Publication date
KR100702412B1 (ko) 2007-04-02
KR20060046268A (ko) 2006-05-17
GB0416124D0 (en) 2004-08-18
CN1725455A (zh) 2006-01-25
US20060014365A1 (en) 2006-01-19
JP2006041495A (ja) 2006-02-09
JP4285448B2 (ja) 2009-06-24
US7517719B2 (en) 2009-04-14

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