JP2006024881A - 薄膜トランジスター及びその製造方法 - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 57
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000002184 metal Substances 0.000 claims abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
- 239000003054 catalyst Substances 0.000 claims abstract description 53
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 46
- 239000013078 crystal Substances 0.000 claims abstract description 38
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000059 patterning Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims description 56
- 239000010408 film Substances 0.000 claims description 48
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 19
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 19
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 238000002425 crystallisation Methods 0.000 abstract description 25
- 230000008025 crystallization Effects 0.000 abstract description 20
- 238000010438 heat treatment Methods 0.000 description 15
- 238000009792 diffusion process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Abstract
【解決手段】 本発明による薄膜トランジスターの製造方法は、基板上に非晶質シリコン層を形成する段階と、前記非晶質シリコン層上に第1のキャッピング層を形成する段階と、前記第1のキャッピング層上に第2のキャッピング層を形成した後に、シードがライン形態に形成されるように前記第2のキャッピング層をパターニングする段階と、前記第2のキャッピング層パターン上に金属触媒層を形成する段階と、前記金属触媒を拡散させる段階と、前記非晶質シリコン層を結晶化した後にパターニングして半導体層パターンを形成する段階と、を含む。
【選択図】 図1E
Description
11 非晶質シリコン層
12 第1のキャッピング層
13 第2のキャッピング層パターン
14 金属触媒
15 シード
16 半導体層パターン
18 ゲート絶縁膜
19 ゲート電極
32 第1のキャッピング層パターン
33 第2のキャッピング層
42 キャッピング層
A ライン形態シード内のシード間の距離
B ライン形態シード間の距離
C 第2のキャッピング層パターン間の間隔
D 第1のキャッピング層パターン間の間隔
E キャッピング層に形成された凹部の幅
Claims (30)
- 基板と、
前記基板上に形成された半導体層パターンと、
前記半導体層パターン上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極と、を含み、
前記半導体層パターン内のチャンネル層に形成された多結晶シリコンの低角結晶粒境界らは、電流が流れる方向を基準として−15〜+15゜をなすこと
を特徴とする薄膜トランジスター。 - 前記多結晶シリコンの低角結晶粒境界らは、電流が流れる方向を基準として平行をなすこと
を特徴とする請求項1に記載の薄膜トランジスター。 - 前記半導体層パターン内のチャンネル層には、多結晶シリコンの結晶粒境界が一つ形成されること
を特徴とする請求項1に記載の薄膜トランジスター。 - 前記基板と前記半導体層パターンとの間に形成されたバッファー層をさらに含むこと
を特徴とする請求項1に記載の薄膜トランジスター。 - 前記バッファー層は、シリコン窒化膜又はシリコン酸化膜からなること
を特徴とする請求項4に記載の薄膜トランジスター。 - 基板上に非晶質シリコン層を形成する段階と、
前記非晶質シリコン層上に第1のキャッピング層を形成する段階と、
前記第1のキャッピング層上に第2のキャッピング層を形成した後に、シードがライン形態に形成されるように前記第2のキャッピング層をパターニングする段階と、
前記第2のキャッピング層パターン上に金属触媒層を形成する段階と、
前記金属触媒を拡散させる段階と、
前記非晶質シリコン層を結晶化した後にパターニングして半導体層パターンを形成する段階と、を含むこと
を特徴とする薄膜トランジスターの製造方法。 - 前記ライン形態シード間の距離は、前記ライン形態シード内のシード間の距離より長いこと
を特徴とする請求項6に記載の薄膜トランジスターの製造方法。 - 前記半導体層パターン内のチャンネル層は、前記ライン形態シードにおいて前記ライン形態シード内のシード間の距離の少なくとも1/2以上離れた領域から形成されること
を特徴とする請求項6に記載の薄膜トランジスターの製造方法。 - 前記ライン形態シード間の距離と前記ライン形態シード内のシード間の距離との差は、前記チャンネル層の長さより大きいことをこと
を特徴とする請求項8に記載の薄膜トランジスターの製造方法。 - 前記第1のキャッピング層は、シリコン窒化膜又はシリコン酸化膜からなること
を特徴とする請求項6に記載の薄膜トランジスターの製造方法。 - 前記第2のキャッピング層パターンは、シリコン窒化膜又はシリコン酸化膜からなること
を特徴とする請求項6に記載の薄膜トランジスターの製造方法。 - 前記第2のキャッピング層パターン間の間隔は、1〜50μmであること
を特徴とする請求項6に記載の薄膜トランジスターの製造方法。 - 前記第2のキャッピング層パターンは、前記第1のキャッピング層より厚いこと
を特徴とする請求項6に記載の薄膜トランジスターの製造方法。 - 前記第2のキャッピング層パターンは、前記第1のキャッピング層より高密度であること
を特徴とする請求項6に記載の薄膜トランジスターの製造方法。 - 前記第1のキャッピング層又は第2のキャッピング層は、プラズマ強化化学気相蒸着(PECVD)法を用いて形成すること
を特徴とする請求項6に記載の薄膜トランジスターの製造方法。 - 基板上に非晶質シリコン層を形成する段階と、
前記非晶質シリコン層上に第1のキャッピング層を形成した後に、シードがライン形態に形成されるように前記第1のキャッピング層をパターニングする段階と、
前記第1のキャッピング層パターン上に第2のキャッピング層を形成する段階と
前記第2のキャッピング層上に金属触媒層を形成する段階と、
前記金属触媒を拡散させる段階と、
前記非晶質シリコン層を結晶化した後にパターニングして半導体層パターンを形成する段階と、を含むこと
を特徴とする薄膜トランジスターの製造方法。 - 前記ライン形態シード間の距離は、前記ライン形態シード内のシード間の距離より長いこと
を特徴とする請求項16に記載の薄膜トランジスターの製造方法。 - 前記半導体層パターン内のチャンネル層は、前記ライン形態シードにおいて前記ライン形態シード内のシード間の距離の少なくとも1/2以上離れた領域から形成されること
を特徴とする請求項16に記載の薄膜トランジスターの製造方法。 - 前記ライン形態シード間の距離と前記ライン形態シード内のシード間の距離との差は、前記チャンネル層の長さより大きいこと
を特徴とする請求項18に記載の薄膜トランジスターの製造方法。 - 前記第1のキャッピング層パターンは、シリコン窒化膜又はシリコン酸化膜からなること
を特徴とする請求項16に記載の薄膜トランジスターの製造方法。 - 前記第2のキャッピング層は、シリコン窒化膜又はシリコン酸化膜からなること
を特徴とする請求項16に記載の薄膜トランジスターの製造方法。 - 前記第1のキャッピング層パターン間の間隔は、1〜50μmであること
を特徴とする請求項16に記載の薄膜トランジスターの製造方法。 - 前記第1のキャッピング層パターンは、前記第2のキャッピング層より厚いこと
を特徴とする請求項16に記載の薄膜トランジスターの製造方法。 - 前記第1のキャッピング層パターンは、前記第2のキャッピング層より高密度であること
を特徴とする請求項16に記載の薄膜トランジスターの製造方法。 - 基板上に非晶質シリコン層を形成する段階と、
前記非晶質シリコン層上にキャッピング層を形成した後に、シードがライン形態に形成されるように前記キャッピング層に凹部を形成する段階と、
前記キャッピング層上に金属触媒層を形成する段階と、
前記金属触媒を拡散させる段階と、
前記非晶質シリコン層を結晶化した後にパターニングして半導体層パターンを形成する段階と、を含むこと
を特徴とする薄膜トランジスターの製造方法。 - 前記ライン形態シード間の距離は、前記ライン形態シード内のシード間の距離より長いこと
を特徴とする請求項25に記載の薄膜トランジスターの製造方法。 - 前記半導体層パターン内のチャンネル層は、前記ライン形態シードにおいて前記ライン形態シード内のシード間の距離の少なくとも1/2以上離れた領域から形成されること
を特徴とする請求項25に記載の薄膜トランジスターの製造方法。 - 前記ライン形態シード間の距離と前記ライン形態シード内のシード間の距離との差は、前記チャンネル層の長さより大きいこと
を特徴とする請求項27に記載の薄膜トランジスターの製造方法。 - 前記キャッピング層は、シリコン窒化膜又はシリコン酸化膜からなること
を特徴とする請求項25に記載の薄膜トランジスターの製造方法。 - 前記キャッピング層に形成された凹分の幅は、1〜50μmであること
を特徴とする請求項25に記載の薄膜トランジスターの製造方法。
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JP2008165186A (ja) * | 2006-12-29 | 2008-07-17 | Samsung Sdi Co Ltd | 有機電界発光表示装置及びその製造方法 |
JP4642825B2 (ja) * | 2006-12-29 | 2011-03-02 | 三星モバイルディスプレイ株式會社 | 有機電界発光表示装置及びその製造方法 |
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JP2011109062A (ja) * | 2009-11-13 | 2011-06-02 | Samsung Mobile Display Co Ltd | 薄膜トランジスタ、有機電界発光表示装置、薄膜トランジスタの製造方法及び有機電界発光表示装置の製造方法 |
JP2011109075A (ja) * | 2009-11-13 | 2011-06-02 | Samsung Mobile Display Co Ltd | 多結晶シリコン層の製造方法、薄膜トランジスタ、それを含む有機電界発光表示装置及びその製造方法 |
US8384087B2 (en) | 2009-11-13 | 2013-02-26 | Samsung Display Co., Ltd. | Thin film transistor, organic light emitting diode display device having the same, and method of fabricating the same |
US8890165B2 (en) | 2009-11-13 | 2014-11-18 | Samsung Display Co., Ltd. | Method of forming polycrystalline silicon layer, thin film transistor, organic light emitting diode display device having the same, and methods of fabricating the same |
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US20060006465A1 (en) | 2006-01-12 |
KR100611659B1 (ko) | 2006-08-10 |
US20060121651A1 (en) | 2006-06-08 |
CN100481508C (zh) | 2009-04-22 |
US7247880B2 (en) | 2007-07-24 |
CN1719615A (zh) | 2006-01-11 |
KR20060003706A (ko) | 2006-01-11 |
JP4095064B2 (ja) | 2008-06-04 |
US7485552B2 (en) | 2009-02-03 |
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